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    • 1. 发明申请
    • NON-VOLATILE STORAGE WITH SOURCE BIAS ALL BIT LINE SENSING
    • 非挥发性存储与源偏移所有位线感测
    • WO2009006275A1
    • 2009-01-08
    • PCT/US2008/068525
    • 2008-06-27
    • SANDISK CORPORATIONLEE, SeungpilNGUYEN, Hao ThaiMUI, Man Lung
    • LEE, SeungpilNGUYEN, Hao ThaiMUI, Man Lung
    • G11C16/26G11C16/10
    • G11C16/0483G11C16/26G11C16/3454G11C2211/565
    • A NAND string in which bit line-to-bit line noise is discharged prior to sensing a programming condition of a selected non-volatile storage element in the NAND string. A source voltage is applied which boosts the voltage in conductive NAND strings. The voltage boost results in capacitive coupling of noise to neighboring NAND strings. A current pull down device is used to discharge each NAND string prior to performing sensing. After each NAND string is coupled to a discharge path for a predetermined amount of time, bit lines of the NAND string are coupled to voltage sense components for sensing the programming condition of the selected non-volatile storage elements based on a potential of the bit lines. The selected non-volatile storage elements may have a negative threshold voltage. Further, a word line associated with the selected non-volatile storage elements may be set at ground.
    • 在读取NAND串中选定的非易失性存储元件的编程条件之前,其中位线对位线噪声被放电的NAND串。 施加源电压,其提高导电NAND串中的电压。 电压升高导致噪声与相邻NAND串的电容耦合。 电流下拉器件用于在执行感测之前对每个NAND串进行放电。 在每个NAND串被连接到放电路径达预定时间量之后,NAND串的位线被耦合到电压感测组件,用于基于位线的电位感测所选择的非易失性存储元件的编程状态 。 所选择的非易失性存储元件可具有负阈值电压。 此外,与所选择的非易失性存储元件相关联的字线可以被设置为接地。
    • 6. 发明申请
    • REGULATION OF RECOVERY RATES IN CHARGE PUMPS
    • 充电泵中恢复率的调节
    • WO2010077528A1
    • 2010-07-08
    • PCT/US2009/066268
    • 2009-12-01
    • SANDISK CORPORATIONMUI, Man LungLEE, SeungpilNGUYEN, Hao Thai
    • MUI, Man LungLEE, SeungpilNGUYEN, Hao Thai
    • H02M3/07G11C5/14G11C16/30
    • H02M3/07G11C5/145G11C16/30
    • A method is presented of setting a frequency of a clock for a charge pump system including the clock and a charge pump. This includes setting an initial value for the frequency of the clock and, while operating the charge pump system using the clock running at the initial frequency value, determining the ramp rate of an output voltage for the charge pump during a recovery phase. The frequency of the clock is then adjusted so that the ramp rate of the output voltage for the charge pump during the recovery phase falls in a range not exceeding a predetermined maximum rate. A charge pump system is also described that includes a register having a settable value, where the charge pump clock frequency is responsive to the register value, and count and comparison circuitry is connectable to receive the pump's output voltage and the clock signal and determine from them the number of clock cycles the charge pump uses to recover from a reset value to a predetermined value.
    • 提出了一种设置包括时钟和电荷泵的电荷泵系统的时钟频率的方法。 这包括设置时钟频率的初始值,并且在使用以初始频率值运行的时钟运行电荷泵系统的同时,在恢复阶段确定电荷泵的输出电压的斜坡率。 然后调整时钟的频率,使得在恢复阶段期间电荷泵的输出电压的斜坡速率落在不超过预定最大速率的范围内。 还描述了一种电荷泵系统,其包括具有可设置值的寄存器,其中电荷泵时钟频率响应于寄存器值,并且计数和比较电路可连接以接收泵的输出电压和时钟信号并从它们确定 电荷泵用于从复位值恢复到预定值的时钟周期数。
    • 7. 发明申请
    • LOW NOISE SENSE AMPLIFIER ARRAY AND METHOD FOR NONVOLATILE MEMORY
    • 低噪声感测放大器阵列和非易失性存储器的方法
    • WO2009085865A1
    • 2009-07-09
    • PCT/US2008/087262
    • 2008-12-17
    • SANDISK CORPORATIONNGUYEN, Hao ThaiMUI, Man LungLEE, Seungpil
    • NGUYEN, Hao ThaiMUI, Man LungLEE, Seungpil
    • G11C16/26G11C7/02G11C7/06
    • G11C7/02G11C7/065G11C7/08G11C7/12G11C11/5642G11C16/26
    • In sensing a page of nonvolatile memory cells with a corresponding group of sense modules in parallel, as each high current cell is identified, it is locked out from further sensing while others in the page continued to be sensed. The sense module involved in the locked out is then in a lockout mode and becomes inactive. A noise source from the sense module becomes significant when in the lockout mode. The noise is liable to interfere with the sensing of neighboring cells by coupling through its bit line to neighboring ones. The noise can also couple through the common source line of the page to affect the accuracy of ongoing sensing of the cells in the page. Improved sense modules and method isolate the noise from the lockout sense module from affecting the other sense modules still active in sensing memory cell in the page.
    • 在感测具有对应的一组感测模块的非易失性存储器单元的页面中,当识别出每个高电流单元时,它被锁定以进一步检测,而页面中的其他单元继续被感测。 被锁定的感测模块处于锁定模式并变为非活动状态。 当处于锁定模式时,来自感测模块的噪声源变得显着。 通过将其位线耦合到邻近单元,噪声容易干扰相邻单元的感测。 噪声也可以通过页面的公共源行耦合,以影响页面中单元格的持续感测的准确性。 改进的感测模块和方法将噪声与锁定感测模块隔离,以影响在页面中感测存储器单元中仍然有效的其他感测模块。
    • 9. 发明申请
    • COMPLETE WORD LINE LOOK AHEAD WITH EFFICIENT DATA LATCH ASSIGNMENT IN NON-VOLATILE MEMORY READ OPERATIONS
    • 在非易失性存储器读取操作中使用有效的数据锁存指派完成字符行预测
    • WO2008083132A2
    • 2008-07-10
    • PCT/US2007088779
    • 2007-12-24
    • SANDISK CORPMUI MAN LUNGLEE SEUNGPIL
    • MUI MAN LUNGLEE SEUNGPIL
    • G11C16/28
    • G11C11/5642G11C16/3418
    • Shifts in the apparent charge stored by a charge storage region such as a floating gate in a non- volatile memory cell can occur because of electrical field coupling based on charge stored by adjacent cells. To account for the shift, compensations are applied when reading. When reading a selected word line, the adjacent word line is read first and the data stored in a set of data latches for each bit line. One latch for each bit line stores an indication that the data is from the adjacent word line. The selected word line is then read with compensations based on the different states of the cells on the adjacent word line. Each sense module uses the data from the adjacent word line to select the results of sensing with the appropriate compensation for its bit line. The data from the adjacent word line is overwritten with data from the selected word line at the appropriate time and the indication updated to reflect that the latches store data from the selected word line. The efficient use of the data latches eliminates the need for separate latches to store data from the adjacent word line.
    • 由于基于相邻单元存储的电荷的电场耦合,可能发生由非易失性存储器单元中的诸如浮置栅极的电荷存储区域存储的视在电荷的漂移。 为了说明这种转变,阅读时应用补偿。 当读取选定的字线时,首先读取相邻的字线,并且为每个位线读取存储在一组数据锁存器中的数据。 每个位线的一个锁存器存储数据来自相邻字线的指示。 然后根据相邻字线上单元的不同状态进行补偿读取所选字线。 每个感测模块使用来自相邻字线的数据来选择对其位线进行适当补偿的感测结果。 来自相邻字线的数据在适当的时间被来自所选字线的数据覆盖,并且更新指示以反映锁存器存储来自所选字线的数据。 数据锁存器的有效使用消除了单独的锁存器来存储来自相邻字线的数据的需要。