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1. 发明申请

WO2011156239A3 TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS USING PULSED HEAT TRANSFER FLUID FLOW 审中-公开
标题翻译：使用脉冲传热流体的等离子体处理装置中的温度控制
公开(公告)号：WO2011156239A3
公开(公告)日：2012-01-26
申请号：PCT/US2011039182
申请日：2011-06-03
申请人： APPLIED MATERIALS INC , TAVASSOLI HAMID , ZHOU XIAOPING , NEVIL SHANE C , BUCHBERGER DOUGLAS A , SILVEIRA FERNANDO M , MAYS BRAD L , TSONG TINA , MAHADESWARASWAMY CHETAN , PATTAR YASHASWINI B , NGUYEN DUY D , MERRY WALTER R
发明人： TAVASSOLI HAMID , ZHOU XIAOPING , NEVIL SHANE C , BUCHBERGER DOUGLAS A , SILVEIRA FERNANDO M , MAYS BRAD L , TSONG TINA , MAHADESWARASWAMY CHETAN , PATTAR YASHASWINI B , NGUYEN DUY D , MERRY WALTER R
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，温度控制至少部分地基于从输入到处理室中的等离子体功率导出的前馈控制信号。在另外的实施例中，耦合到受温度控制的部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流量管道保持。在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好温度控制性能的持续时间的配比循环打开。

2. 发明申请

WO2005101100A3 METHOD AND APPARATUS FOR IN-SITU FILM STACK PROCESSING 审中-公开
标题翻译：用于现场薄膜堆叠处理的方法和装置
公开(公告)号：WO2005101100A3
公开(公告)日：2006-08-24
申请号：PCT/US2005011319
申请日：2005-04-01
申请人： APPLIED MATERIALS INC , MERRY WALTER R , SHANG QUANYUAN , WHITE JOHN M
发明人： MERRY WALTER R , SHANG QUANYUAN , WHITE JOHN M
IPC分类号： H01J37/32 , B44C1/22 , C23F1/00 , G02F20060101 , H01J37/16 , H01J37/18 , H01L21/302
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32522 , H01J37/32788 , H01J2237/3325 , H01J2237/334
摘要： Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
摘要翻译：提供了一种用于处理薄膜叠层的集群工具，处理室和方法的实施例。在一个实施例中，提供了一种用于原位蚀刻膜堆叠的硅和金属层的方法，其包括以下步骤：在处理室中蚀刻膜堆叠的上金属层以暴露下层硅层的一部分，并且在硅层中蚀刻沟槽而不从处理室移除衬底。本发明对于平板显示器的薄膜晶体管制造特别有用。

3. 发明申请

WO2011156239A2 TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS USING PULSED HEAT TRANSFER FLUID FLOW 审中-公开
标题翻译：使用脉冲热传递流体的等离子体处理装置中的温度控制
公开(公告)号：WO2011156239A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/039182
申请日：2011-06-03
申请人： APPLIED MATERIALS, INC. , TAVASSOLI, Hamid , ZHOU, Xiaoping , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , TSONG, Tina , MAHADESWARASWAMY, Chetan , PATTAR, Yashaswini, B. , NGUYEN, Duy, D. , MERRY, Walter, R.
发明人： TAVASSOLI, Hamid , ZHOU, Xiaoping , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , TSONG, Tina , MAHADESWARASWAMY, Chetan , PATTAR, Yashaswini, B. , NGUYEN, Duy, D. , MERRY, Walter, R.
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

4. 发明申请

WO2013062828A1 TEMPERATURE CONTROL WITH STACKED PROPORTIONING VALVE 审中-公开
标题翻译：具有堆积比例阀的温度控制
公开(公告)号：WO2013062828A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/060658
申请日：2012-10-17
申请人： APPLIED MATERIALS, INC. , MERRY, Walter R.
发明人： MERRY, Walter R.
IPC分类号： H05H1/34 , H01L21/3065 , H01L21/205
CPC分类号： H01J37/32522 , Y10T137/86541 , Y10T137/86622 , Y10T137/86863
摘要： A stacked proportioning valve having a body with at least two sets of ports disposed at different positions along a longitudinal length of the body, each set of ports including at least three ports at different angular positions to couple to fluid conduits, a rotor disposed in the valve body has at least two sections stacked along the longitudinal length, each section comprising three fluid channels in longitudinal alignment with one of the sets of ports, and a drive shaft affixed to the rotor, the drive shaft to rotate the rotor over angular positions to fluidly couple together pairs of ports in each of the sets of ports synchronously as a function of the rotor's angular position. In embodiments a component of a plasma processing chamber, such as a plasma etch chamber is fluidly coupled by the stack proportioning valve to reservoirs of both a hot and cold chiller.
摘要翻译：一种堆叠式配比阀，具有主体，该主体具有至少两组端口，沿着主体的纵向长度设置在不同位置，每组端口包括至少三个不同角度位置处的端口，以连接到流体导管;转子，阀体具有沿着纵向长度堆叠的至少两个部分，每个部分包括与一组端口纵向对准的三个流体通道，以及固定到转子的驱动轴，驱动轴将转子旋转到角位置作为转子的角位置的函数，将各组端口中的端口对中的一对端口流体耦合。在实施例中，等离子体处理室（诸如等离子体蚀刻室）的部件通过堆叠比例阀流体耦合到热和冷冷水机组的储存器。

5. 发明申请

WO2011093979A3 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：WO2011093979A3
公开(公告)日：2011-08-04
申请号：PCT/US2010/062435
申请日：2010-12-29
申请人： APPLIED MATERIALS, INC. , MAHADESWARASWAMY, Chetan , MERRY, Walter, R. , SHOJI, Sergio, Fukuda , ZHANG, Chunlei , PATTAR, Yashaswini , NGUYEN, Duy, D. , TSONG, Tina , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. Jr. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , RAMASWAMY, Kartik , NOORBAKHSH, Hamid
发明人： MAHADESWARASWAMY, Chetan , MERRY, Walter, R. , SHOJI, Sergio, Fukuda , ZHANG, Chunlei , PATTAR, Yashaswini , NGUYEN, Duy, D. , TSONG, Tina , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. Jr. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , RAMASWAMY, Kartik , NOORBAKHSH, Hamid
IPC分类号： H05H1/46 , H01L21/3065 , H01L21/205
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分基于从输入处理室的等离子体功率导出的前馈控制信号。补偿可归因于等离子体功率的温度干扰的前馈控制信号可以与反馈控制信号结合，以抵消测量温度和期望温度之间的误差。

6. 发明申请

WO2011093979A2 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备的前级温度控制
公开(公告)号：WO2011093979A2
公开(公告)日：2011-08-04
申请号：PCT/US2010062435
申请日：2010-12-29
申请人： APPLIED MATERIALS INC , MAHADESWARASWAMY CHETAN , MERRY WALTER R , SHOJI SERGIO FUKUDA , ZHANG CHUNLEI , PATTAR YASHASWINI , NGUYEN DUY D , TSONG TINA , NEVIL SHANE C , BUCHBERGER DOUGLAS A JR , SILVEIRA FERNANDO M , MAYS BRAD L , RAMASWAMY KARTIK , NOORBAKHSH HAMID
发明人： MAHADESWARASWAMY CHETAN , MERRY WALTER R , SHOJI SERGIO FUKUDA , ZHANG CHUNLEI , PATTAR YASHASWINI , NGUYEN DUY D , TSONG TINA , NEVIL SHANE C , BUCHBERGER DOUGLAS A JR , SILVEIRA FERNANDO M , MAYS BRAD L , RAMASWAMY KARTIK , NOORBAKHSH HAMID
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

7. 发明申请

WO2005101100A2 METHOD AND APPARATUS FOR IN-SITU FILM STACK PROCESSING 审中-公开
标题翻译：用于现场薄膜堆叠处理的方法和装置
公开(公告)号：WO2005101100A2
公开(公告)日：2005-10-27
申请号：PCT/US2005/011319
申请日：2005-04-01
申请人： APPLIED MATERIALS, INC. , MERRY, Walter R. , SHANG, Quanyuan , WHITE, John M.
发明人： MERRY, Walter R. , SHANG, Quanyuan , WHITE, John M.
IPC分类号： G02F
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32522 , H01J37/32788 , H01J2237/3325 , H01J2237/334
摘要： Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
摘要翻译：提供了一种用于处理薄膜叠层的集群工具，处理室和方法的实施例。在一个实施例中，提供了一种用于原位蚀刻膜堆叠的硅和金属层的方法，其包括以下步骤：在处理室中蚀刻膜堆叠的上金属层以暴露下层硅层的一部分，并且在硅层中蚀刻沟槽而不从处理室移除衬底。本发明对于平板显示器的薄膜晶体管制造特别有用。

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