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1. 发明申请

WO2005101100A3 METHOD AND APPARATUS FOR IN-SITU FILM STACK PROCESSING 审中-公开
标题翻译：用于现场薄膜堆叠处理的方法和装置
公开(公告)号：WO2005101100A3
公开(公告)日：2006-08-24
申请号：PCT/US2005011319
申请日：2005-04-01
申请人： APPLIED MATERIALS INC , MERRY WALTER R , SHANG QUANYUAN , WHITE JOHN M
发明人： MERRY WALTER R , SHANG QUANYUAN , WHITE JOHN M
IPC分类号： H01J37/32 , B44C1/22 , C23F1/00 , G02F20060101 , H01J37/16 , H01J37/18 , H01L21/302
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32522 , H01J37/32788 , H01J2237/3325 , H01J2237/334
摘要： Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
摘要翻译：提供了一种用于处理薄膜叠层的集群工具，处理室和方法的实施例。在一个实施例中，提供了一种用于原位蚀刻膜堆叠的硅和金属层的方法，其包括以下步骤：在处理室中蚀刻膜堆叠的上金属层以暴露下层硅层的一部分，并且在硅层中蚀刻沟槽而不从处理室移除衬底。本发明对于平板显示器的薄膜晶体管制造特别有用。

2. 发明申请

WO2008013902A3 METHODS AND APPARATUS FOR IMPROVED MANUFACTURING OF COLOR FILTERS 审中-公开
标题翻译：用于改进彩色滤光片制造的方法和设备
公开(公告)号：WO2008013902A3
公开(公告)日：2008-09-12
申请号：PCT/US2007016831
申请日：2007-07-26
申请人： APPLIED MATERIALS INC , WHITE JOHN M , SHANG QUANYUAN
发明人： WHITE JOHN M , SHANG QUANYUAN
IPC分类号： B41J29/393 , B41J3/407
CPC分类号： B41J2/2128 , B41J25/003 , G02B5/201
摘要： Methods and apparatus are provided in which a substrate is aligned so that a longitudinal dimension of a plurality of sub-pixel wells formed on the substrate are substantially perpendicular to a printing direction. Ink is deposited in a subset of the sub-pixel wells via nozzles of a print head wherein each of a plurality of the nozzles deposits a plurality of ink drops in each of the subset of the sub-pixel wells. Numerous other aspects are disclosed.
摘要翻译：提供了一种方法和设备，其中衬底被对准，使得在衬底上形成的多个子像素阱的纵向尺寸基本垂直于印刷方向。通过印刷头的喷嘴将油墨沉积在亚像素井的子集中，其中多个喷嘴中的每一个在多个子像素井的子集中的每一个中沉积多个墨滴。披露了许多其他方面。

3. 发明申请

WO2006078702A3 APPARATUS AND METHOD FOR SUBSTRATE TREATMENT FOR MANUFACTURING OF COLOR FILTERS BY INKJET PRINTING SYSTEMS 审中-公开
标题翻译：喷墨打印系统制造彩色滤色片的基板处理设备及方法
公开(公告)号：WO2006078702A3
公开(公告)日：2009-04-09
申请号：PCT/US2006001716
申请日：2006-01-18
申请人： APPLIED MATERIALS INC , SZE FAN CHEUNG , SHANG QUANYUAN , WHITE JOHN M
发明人： SZE FAN CHEUNG , SHANG QUANYUAN , WHITE JOHN M
IPC分类号： B41J2/145 , A61B17/02 , A61B17/17 , A61F2/00 , A61F2/28 , A61F2/30 , A61F2/44 , A61F2/46
CPC分类号： G02F1/133516 , G02F1/133512
摘要： Apparatus and methods for treating a substrate of a flat panel display are provided. An inkjet printing system that includes a chemical compound application assembly that applies chemical compound(s) on a substrate of a flat panel display through a chemical compound applicator is provided. The inkjet printing system may also include a substrate support stage, a stage positioning system, and an inkjet printing module. The chemical compound applicator may have a width that substantially spans the substrate width. A method for treating a glass substrate and a black matrix thereon for a flat panel display prior to delivery of ink to the glass substrate by an inkjet printing system is also provided. The black matrix and glass substrate are exposed to a surface active compound which may modify the surface energy of the black matrix, the surface energy of the glass substrate, or both.
摘要翻译：提供了用于处理平板显示器的基板的设备和方法。提供了一种喷墨打印系统，其包括通过化学复合施加器在平板显示器的基板上施加化合物的化合物施加组件。喷墨打印系统还可以包括基板支撑台，台架定位系统和喷墨打印模块。化合物涂布器可以具有基本跨越基底宽度的宽度。还提供了一种用于在通过喷墨打印系统将墨水输送到玻璃基板之前用于处理平板显示器的玻璃基板和黑色矩阵的方法。黑色矩阵和玻璃基板暴露于表面活性化合物，其可以改变黑色基体的表面能，玻璃基底的表面能或二者的表面能。

4. 发明申请

WO2008013839A3 METHODS AND APPARATUS FOR PURGING A SUBSTRATE DURING INKJET PRINTING 审中-公开
标题翻译：在喷墨打印过程中采集基材的方法和装置
公开(公告)号：WO2008013839A3
公开(公告)日：2008-10-23
申请号：PCT/US2007016700
申请日：2007-07-25
申请人： APPLIED MATERIALS INC , SHANG QUANYUAN , SZE FAN CHEUNG , HOOG JOSEF , SUN LIZHONG , WHITE JOHN M
发明人： SHANG QUANYUAN , SZE FAN CHEUNG , HOOG JOSEF , SUN LIZHONG , WHITE JOHN M
IPC分类号： B41J2/165 , B41J2/215
CPC分类号： B41J2/16552 , B41J29/17
摘要： The invention provides an ink jet printing apparatus (1000) that includes at least one ink jet print head (1002) adapted to dispense flu onto a substrate (S) and at least one delivery aperture (1006a or 1006b) adapted to direct a gas (from a gas supply 1010) toward the substrate. The apparatus may also include at least one recovery aperture (1008a or 1008b) adapted to draw materials away from the substrate and evaporate liquids from the surface of the substrate.
摘要翻译：本发明提供了一种喷墨打印设备（1000），其包括适于将流感分配到基底（S）上的至少一个喷墨打印头（1002）和至少一个适于引导气体的输送孔（1006a或1006b）从气体供给部1010）朝向基板。该装置还可以包括至少一个适于将材料从衬底拉出并从衬底的表面蒸发液体的回收孔（1008a或1008b）。

5. 发明申请

WO2009076249A3 METHODS AND APPARATUS FOR MEASURING DEPOSITED INK IN PIXEL WELLS ON A SUBSTRATE USING A LINE SCAN CAMERA 审中-公开
标题翻译：使用线扫描摄像机测量基板上像素井中沉积的油墨的方法和设备
公开(公告)号：WO2009076249A3
公开(公告)日：2009-08-20
申请号：PCT/US2008085775
申请日：2008-12-06
申请人： APPLIED MATERIALS INC , SHANG QUANYUAN , WHITE JOHN M
发明人： SHANG QUANYUAN , WHITE JOHN M
IPC分类号： G02F1/13 , G01N21/88 , G02F1/1335
CPC分类号： G01N21/95 , G01N2021/9513
摘要： Systems and methods for measuring deposited ink in a substrate are provided. The invention includes a light source adapted to transmit light through a deposited ink on a substrate, and a camera having a CCD sensor array wherein the camera is adapted to measure the amount of light that is transmitted through the deposited ink. Numerous other aspects are provided.
摘要翻译：提供了用于测量基底中的沉积墨水的系统和方法。本发明包括适于透过沉积在基底上的墨水的光源和具有CCD传感器阵列的照相机，其中照相机适于测量透过沉积墨水的光量。许多其他方面提供。

6. 发明申请

WO2004112104A3 LOW TEMPERATURE PROCESS FOR TFT FABRICATION 审中-公开
标题翻译： TFT制造的低温工艺
公开(公告)号：WO2004112104A3
公开(公告)日：2005-03-17
申请号：PCT/US2004017236
申请日：2004-06-01
申请人： APPLIED MATERIALS INC , HSIAO MARK , YIM DONG-KIL , TAKEHARA TAKAKO , SHANG QUANYUAN , HARSHBARGER WILLIAM R , KIM WOONG-KWON , YUN DUK-CHUL , CHANG YOU-GYUNG
发明人： HSIAO MARK , YIM DONG-KIL , TAKEHARA TAKAKO , SHANG QUANYUAN , HARSHBARGER WILLIAM R , KIM WOONG-KWON , YUN DUK-CHUL , CHANG YOU-GYUNG
IPC分类号： H01L21/336 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300 °C or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2等离子体。在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

7. 发明申请

WO2011028529A3 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY THERMAL SPRAYING 审中-公开
标题翻译：电喷活性锂离子电池原位沉积
公开(公告)号：WO2011028529A3
公开(公告)日：2011-06-23
申请号：PCT/US2010046501
申请日：2010-08-24
申请人： APPLIED MATERIALS INC , SHANG QUANYUAN , YANG LU , BROWN KARL M , OLGADO DONALD J K , PEBENITO VICTOR , BOLANDI HOOMAN , ISHIKAWA TETSUYA , BACHRACH ROBERT Z , CHEN LIANG-YUH
发明人： SHANG QUANYUAN , YANG LU , BROWN KARL M , OLGADO DONALD J K , PEBENITO VICTOR , BOLANDI HOOMAN , ISHIKAWA TETSUYA , BACHRACH ROBERT Z , CHEN LIANG-YUH
IPC分类号： C23C4/12 , B05D1/08 , B05D3/00 , B05D7/14 , C23C4/04 , C23C4/18
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译：提供一种用于形成薄膜电池的电化学层的方法和装置。将包含分散在承载介质中的电化学活性前体颗粒的前体混合物提供到处理室，并使用也提供给室的可燃气体混合物进行热处理。通过热能将前体转化成纳米晶体，并将纳米晶体沉积在基底上。当第二前体沉积在表面上以增强粘附性和导电性时，可与纳米晶体共混。

8. 发明申请

WO2011028527A2 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY PLASMA SPRAYING 审中-公开
标题翻译：等离子喷涂原位沉积电池活性锂材料
公开(公告)号：WO2011028527A2
公开(公告)日：2011-03-10
申请号：PCT/US2010046498
申请日：2010-08-24
申请人： APPLIED MATERIALS INC , SHANG QUANYUAN , YANG LU , BROWN KARL M , OLGADO DONALD J K , PEBENITO VICTOR , BOLANDI HOOMAN , ISHIKAWA TETSUYA , BACHRACH ROBERT Z , CHEN LIANG-YUH
发明人： SHANG QUANYUAN , YANG LU , BROWN KARL M , OLGADO DONALD J K , PEBENITO VICTOR , BOLANDI HOOMAN , ISHIKAWA TETSUYA , BACHRACH ROBERT Z , CHEN LIANG-YUH
IPC分类号： C23C4/12 , B05D1/04 , B05D3/00 , B05D7/14 , C23C4/04 , C23C4/18
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising precursor particles dispersed in a carrying medium is activated in an activation chamber by application of an electric field to ionize at least a portion of the precursor mixture. The activated precursor mixture is then mixed with a combustible gas mixture to add thermal energy to the precursor particles, converting them to nanocrystals, which deposit on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity
摘要翻译：提供了一种用于形成薄膜电池的电化学层的方法和设备。包含分散在载体介质中的前体颗粒的前体混合物通过施加电场在活化室中被活化以电离至少一部分前体混合物。然后将活化的前体混合物与可燃气体混合物混合以向前体颗粒添加热能，将它们转化为沉积在基底上的纳米晶体。当它们沉积在表面上时，第二前体可以与纳米晶体混合以增强粘附性和导电性

9. 发明申请

WO2007106180A3 PHOTOVOLTAIC CONTACT AND WIRING FORMATION 审中-公开
标题翻译：光伏接触和接线形成
公开(公告)号：WO2007106180A3
公开(公告)日：2007-12-06
申请号：PCT/US2006060568
申请日：2006-11-06
申请人： APPLIED MATERIALS INC , BACHRACH ROBERT Z , SHANG QUANYUAN , YE YAN
发明人： BACHRACH ROBERT Z , SHANG QUANYUAN , YE YAN
IPC分类号： H01L21/441 , H01L21/4763
CPC分类号： C23C14/35 , C23C14/564 , H01L31/022425 , H01L31/18 , H05K3/048 , Y02E10/50
摘要： A method and apparatus for fabricating a solar cell and forming metal contact is disclosed. Solar cell contact and wiring is formed by depositing a thin film stack of a first metal material and a second metal material as an initiation layer or seed layer for depositing a bulk metal layer in conjunction with additional sheet processing, photolithography, etching, cleaning, and annealing processes. In one embodiment, the thin film stack for forming metal silicide with reduced contact resistance over the sheet is deposited by sputtering or physical vapor deposition. In another embodiment, the bulk metal layer for forming metal lines and wiring is deposited by sputtering or physical vapor deposition. In an alternative embodiment, electroplating or electroless deposition is used to deposit the bulk metal layer.
摘要翻译：公开了一种用于制造太阳能电池和形成金属接触的方法和装置。太阳能电池接触和布线是通过沉积第一金属材料和第二金属材料的薄膜堆叠形成的，作为起始层或种子层，用于结合额外的片材加工，光刻，蚀刻，清洁和退火工艺。在一个实施例中，通过溅射或物理气相沉积来沉积用于在薄片上形成具有降低的接触电阻的金属硅化物的薄膜叠层。在另一个实施例中，通过溅射或物理气相沉积沉积用于形成金属线和布线的体金属层。在替代实施例中，使用电镀或无电沉积来沉积体金属层。

10. 发明申请

WO2004093163A3 METHOD AND APPARATUS FOR SILICONE OXIDE DEPOSITION ON LARGE AREA SUBSTRATES 审中-公开
标题翻译：在大面积衬底上沉积氧化硅的方法和设备
公开(公告)号：WO2004093163A3
公开(公告)日：2004-12-23
申请号：PCT/US2004010543
申请日：2004-04-05
申请人： APPLIED MATERIALS INC , YADAV SANJAY D , SHANG QUANYUAN , BLONIGAN WENDELL T
发明人： YADAV SANJAY D , SHANG QUANYUAN , BLONIGAN WENDELL T
IPC分类号： C23C16/40 , C23C16/448 , H01L21/316
CPC分类号： C23C16/402 , C23C16/4485
摘要： A method and apparatus for depositing a dielectric material at a rate of at least 4000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a vaporizer comprising a plurality of grooves.
摘要翻译：提供了一种用于在具有至少大约0.35平方米的表面积的大面积衬底上以至少4000埃/分钟的速率沉积介电材料的方法和装置。在一个实施例中，介电材料是氧化硅。还提供了包括多个凹槽的蒸发器。

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