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1. 发明申请

WO2011072179A3 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：高效率光伏背接触太阳能电池结构及使用半导体晶圆的制造方法
公开(公告)号：WO2011072179A3
公开(公告)日：2011-11-17
申请号：PCT/US2010059783
申请日：2010-12-09
申请人： SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
发明人： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
IPC分类号： H01L31/042 , H01L31/0216
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.
摘要翻译：提供了使用半导体晶片的背接触背结太阳能电池和用于制造的方法。背接触背结太阳能电池包括具有掺杂基极区域，光捕获正面表面和掺杂背面发射极区域的半导体晶片。正面和背面介电层和钝化层提供增强的光俘获和内部反射。背侧基极和发射极触点连接到金属互连上，在太阳能电池的背面形成交叉指状物和母线的金属化图案。

2. 发明申请

WO2008144629A1 RAISED SOURCE/DRAIN REGIONS IN MOS DEVICE 审中-公开
标题翻译： MOS设备中的提取源/排水区域
公开(公告)号：WO2008144629A1
公开(公告)日：2008-11-27
申请号：PCT/US2008/064082
申请日：2008-05-19
申请人： TEXAS INSTRUMENTS INCORPORATED , SRIDHAR, Seetharaman , MANSOORI, Majid
发明人： SRIDHAR, Seetharaman , MANSOORI, Majid
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/823807 , H01L29/66636 , H01L29/7848
摘要： Provided is a method for manufacturing a semiconductor device that includes a substrate (210) having a PMOS device region (220) and NMOS device region (260). A first gate structure (240) including a first hardmask (248) and a second gate structure (280) including a second hardmask (288) are formed in the region and region, respectively. Epitaxial SiGe regions (610) are created in the substrate proximate the first gate structure, the first hardmask protecting the first gate structure from the SiGe. First source/drain regions (410, 1020) are formed proximate the first gate structure, at least a portion of each of the first source/drain regions located within one of the SiGe regions. Additionally, a raised portion (710) is grown above the substrate proximate the second gate structure, the portion forming at least a part of second source/drain regions (820, 1120) located on opposing sides of the second gate structure. Additionally, the first and second hardmasks protect the first and second gate structures from the growing.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括具有PMOS器件区（220）和NMOS器件区（260）的衬底（210）。分别在区域和区域中形成包括第一硬掩模（248）和包括第二硬掩模（288）的第二栅极结构（280）的第一栅极结构（240）。在靠近第一栅极结构的衬底中形成外延SiGe区域（610），第一硬掩模保护第一栅极结构与SiGe。第一源极/漏极区（410,1020）形成在第一栅极结构附近，第一源/漏区中的每一个的至少一部分位于SiGe区之一内。另外，凸起部分（710）在靠近第二栅极结构的衬底上方生长，该部分形成位于第二栅极结构的相对侧上的第二源极/漏极区域（820,1120）的至少一部分。此外，第一和第二硬掩模保护第一和第二门结构免受增长。

3. 发明申请

WO2011072179A2 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：高效光伏反接触太阳能电池结构和使用半导体波形的制造方法
公开(公告)号：WO2011072179A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/059783
申请日：2010-12-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-josef , WANG, David, Xuan-qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel , HARWOOD, Duncan , MANSOORI, Majid , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-josef , WANG, David, Xuan-qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel , HARWOOD, Duncan , MANSOORI, Majid , WINGERT, Michael
IPC分类号： H01L31/042 , H01L31/0216
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.
摘要翻译：提供了使用半导体晶片的背面接触式太阳能电池和制造方法。背面接合太阳能电池包括具有掺杂基极区域，光捕获前侧表面和掺杂背侧发射极区域的半导体晶片。前侧和后侧电介质层和钝化层提供增强的光捕获和内部反射。背面基极和发射极触点连接到在太阳能电池的背面上形成交叉指状物和母线的金属化图案的金属互连。

4. 发明申请

WO2006055828A3 SILICIDED SOURCE/DRAIN ELECTRODE WITH POLYSILICON GRAINS 审中-公开
公开(公告)号：WO2006055828A3
公开(公告)日：2006-05-26
申请号：PCT/US2005/041933
申请日：2005-11-16
申请人： TEXAS INSTRUMENTS INCORPORATED , MANSOORI, Majid, M. , WASSHUBER, Christoph
发明人： MANSOORI, Majid, M. , WASSHUBER, Christoph
IPC分类号： H01L29/76 , H01L29/94
摘要： A semiconductor device includes a source/drain electrode (100) for a transistor (105). The source/drain electrode (100) comprises a plurality of polysilicon grains (110) located over a source/drain region (115). A metal silicide layer (120) conformally coats the plurality of polysilicon grains. A method of fabricating the device is also described.

5. 发明申请

WO2006055828A2 SILICIDED SOURCE/DRAIN ELECTRODE WITH POLYSILICON GRAINS 审中-公开
标题翻译：硅多糖颗粒的硅源/漏电极
公开(公告)号：WO2006055828A2
公开(公告)日：2006-05-26
申请号：PCT/US2005041933
申请日：2005-11-16
申请人： TEXAS INSTRUMENTS INC , MANSOORI MAJID M , WASSHUBER CHRISTOPH
发明人： MANSOORI MAJID M , WASSHUBER CHRISTOPH
IPC分类号： H01L21/8234
CPC分类号： H01L29/7834 , H01L21/823814 , H01L29/0843 , H01L29/41783 , H01L29/665
摘要： A semiconductor device includes a source/drain electrode (100) for a transistor (105). The source/drain electrode (100) comprises a plurality of polysilicon grains (110) located over a source/drain region (115). A metal silicide layer (120) conformally coats the plurality of polysilicon grains. A method of fabricating the device is also described.
摘要翻译：半导体器件包括用于晶体管（105）的源极/漏极（100）。源极/漏极（100）包括位于源极/漏极区（115）之上的多个多晶硅颗粒（110）。金属硅化物层（120）共形地涂覆多个多晶硅颗粒。还描述了制造该器件的方法。

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