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1. 发明申请

WO2005034196A3 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
公开(公告)号：WO2005034196A3
公开(公告)日：2005-04-14
申请号：PCT/US2004/032351
申请日：2004-09-30
申请人： AVIZA TECHNOLOGY, INC. , LEE, Sang-In , OWYANG, Jon S. , SENZAKI, Yoshihide , HELMS, Aubrey L. , KAPKIN, Kerem
发明人： LEE, Sang-In , OWYANG, Jon S. , SENZAKI, Yoshihide , HELMS, Aubrey L. , KAPKIN, Kerem
IPC分类号： C30B25/00
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

2. 发明申请

WO2004001808A3 METHOD AND SYSTEM FOR ATOMIC LAYER REMOVAL AND ATOMIC LAYER EXCHANGE 审中-公开
标题翻译：用于原子层去除和原子层交换的方法和系统
公开(公告)号：WO2004001808A3
公开(公告)日：2004-05-27
申请号：PCT/US0319982
申请日：2003-06-23
申请人： AVIZA TECH INC , KAPKIN KEREM , LEE SANG-IN
发明人： KAPKIN KEREM , LEE SANG-IN
IPC分类号： C23C16/455 , H01L21/28 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/768 , H01L29/51 , H01L21/461 , H01L21/31
CPC分类号： H01L21/28185 , C23C16/45525 , H01L21/02063 , H01L21/28194 , H01L21/28211 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/76814 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method and system for atomic layer deposition and removal of a dielectric film are provided. The present invention comprises introducing a first reactant gas into a reactor to react with a first layer of the film to convert the first layer into a mono?layer of a solid compound; introducing a second reactant gas into the reactor to react with the mono?layer of the solid compound to form a gaseous compound; and removing the gaseous compound. Preferably, the mono?layer of the solid compound needs less energy to react with the second reactant gas than a next layer of the film underneath the mono?layer of the solid compound. In another aspect of the present invention a gas reactant having two or more chemical species is exposed to the film and a surface reaction occurs wherein certain of the chemical species in the gas reactant are exchanged with certain chemical species in the top atomic layer of the film.
摘要翻译：提供了用于原子层沉积和去除介电膜的方法和系统。本发明包括将第一反应物气体引入反应器中以与第一层膜反应以将第一层转化为固体化合物的单层; 将第二反应物气体引入反应器中以与固体化合物的单层反应以形成气态化合物; 并除去气态化合物。优选地，与固体化合物单层下面的膜的下一层相比，固体化合物的单层与第二反应气体反应需要更少的能量。在本发明的另一方面，具有两种或更多种化学物质的气体反应物暴露于膜并发生表面反应，其中气体反应物中的某些化学物质与膜的顶部原子层中的某些化学物质交换。

3. 发明申请

WO2004001808A8 METHOD AND SYSTEM FOR ATOMIC LAYER REMOVAL AND ATOMIC LAYER EXCHANGE 审中-公开
标题翻译：用于原子层去除和原子层交换的方法和系统
公开(公告)号：WO2004001808A8
公开(公告)日：2004-08-19
申请号：PCT/US0319982
申请日：2003-06-23
申请人： AVIZA TECH INC , KAPKIN KEREM , LEE SANG-IN
发明人： KAPKIN KEREM , LEE SANG-IN
IPC分类号： C23C16/455 , H01L21/28 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/768 , H01L29/51 , H01L21/461 , H01L21/31
CPC分类号： H01L21/28185 , C23C16/45525 , H01L21/02063 , H01L21/28194 , H01L21/28211 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/76814 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method and system for atomic layer deposition and removal of a dielectric film are provided. The present invention comprises introducing a first reactant gas into a reactor to react with a first layer of the film to convert the first layer into a mono?layer of a solid compound; introducing a second reactant gas into the reactor to react with the mono?layer of the solid compound to form a gaseous compound; and removing the gaseous compound. Preferably, the mono?layer of the solid compound needs less energy to react with the second reactant gas than a next layer of the film underneath the mono?layer of the solid compound. In another aspect of the present invention a gas reactant having two or more chemical species is exposed to the film and a surface reaction occurs wherein certain of the chemical species in the gas reactant are exchanged with certain chemical species in the top atomic layer of the film.
摘要翻译：提供了用于原子层沉积和去除电介质膜的方法和系统。本发明包括将第一反应气体引入反应器以与第一层膜反应，以将第一层转变为固体化合物的单层; 将第二反应气体引入反应器中以与固体化合物的单层α层反应形成气态化合物; 并除去气态化合物。优选地，与固体化合物的单层膜下面的膜的下一层相比，固体化合物的单层需要更少的能量与第二反应气体反应。在本发明的另一方面，具有两种或更多种化学物质的气体反应物暴露于膜，并且发生表面反应，其中气体反应物中的某些化学物质与膜的顶部原子层中的某些化学物质交换。

4. 发明申请

WO2004001808A2 METHOD AND SYSTEM FOR ATOMIC LAYTER REMOVAL AND ATOMIC LAYER EXCHANGE 审中-公开
标题翻译：用于原子层去除和原子层交换的方法和系统
公开(公告)号：WO2004001808A2
公开(公告)日：2003-12-31
申请号：PCT/US2003/019982
申请日：2003-06-23
申请人： ASML US, INC. , KAPKIN, Kerem , LEE, Sang-In
发明人： KAPKIN, Kerem , LEE, Sang-In
IPC分类号： H01L
CPC分类号： H01L21/28185 , C23C16/45525 , H01L21/02063 , H01L21/28194 , H01L21/28211 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/76814 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method and system for atomic layer deposition and removal of a dielectric film are provided. The present invention comprises introducing a first reactant gas into a reactor to react with a first layer of the film to convert the first layer into a mono?layer of a solid compound; introducing a second reactant gas into the reactor to react with the mono?layer of the solid compound to form a gaseous compound; and removing the gaseous compound. Preferably, the mono?layer of the solid compound needs less energy to react with the second reactant gas than a next layer of the film underneath the mono?layer of the solid compound. In another aspect of the present invention a gas reactant having two or more chemical species is exposed to the film and a surface reaction occurs wherein certain of the chemical species in the gas reactant are exchanged with certain chemical species in the top atomic layer of the film.
摘要翻译：提供了用于原子层沉积和去除电介质膜的方法和系统。本发明包括将第一反应气体引入反应器以与第一层膜反应，以将第一层转变为固体化合物的单层; 将第二反应气体引入反应器中以与固体化合物的单层α层反应形成气态化合物; 并除去气态化合物。优选地，与固体化合物的单层膜下面的膜的下一层相比，固体化合物的单层需要更少的能量与第二反应气体反应。在本发明的另一方面，具有两种或更多种化学物质的气体反应物暴露于膜，并且发生表面反应，其中气体反应物中的某些化学物质与膜的顶部原子层中的某些化学物质交换。

5. 发明申请

WO2005034196A9 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
标题翻译：基于高压电介质的原子层沉积
公开(公告)号：WO2005034196A9
公开(公告)日：2005-07-28
申请号：PCT/US2004032351
申请日：2004-09-30
申请人： AVIZA TECH INC , LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
发明人： LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
IPC分类号： C23C16/02 , C23C16/40 , C23C16/42 , C23C16/455 , C30B25/00 , H01L20060101 , H01L
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/401 , C23C16/405 , C23C16/42 , C23C16/45553 , C30B25/165 , C30B29/16 , H01L21/3141 , H01L21/31645
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
摘要翻译：提供了一种沉积铪基电介质膜的方法。该方法包括使用臭氧的原子层沉积和包含铪前体的一种或多种反应物。还提供了半导体器件。该器件包括衬底，形成在衬底顶上的基于铪的电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

6. 发明申请

WO2005034196A2 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
标题翻译：铪基高K电介质的原子层沉积
公开(公告)号：WO2005034196A2
公开(公告)日：2005-04-14
申请号：PCT/US2004032351
申请日：2004-09-30
申请人： AVIZA TECH INC , LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
发明人： LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
IPC分类号： C23C16/02 , C23C16/40 , C23C16/42 , C23C16/455 , C30B25/00 , H01L20060101 , H01L
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/401 , C23C16/405 , C23C16/42 , C23C16/45553 , C30B25/165 , C30B29/16 , H01L21/3141 , H01L21/31645
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
摘要翻译：提供了一种沉积铪基电介质膜的方法。该方法包括使用臭氧和包含铪前体的一种或多种反应物的原子层沉积。还提供了半导体器件。该器件包括衬底，形成在衬底顶上的铪基电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

7. 发明申请

WO2004001809A8 METHOD FOR ENERGY-ASSISTED ATOMIC LAYER DEPOSITION AND REMOVAL 审中-公开
标题翻译：用于能量辅助原子层沉积和去除的方法
公开(公告)号：WO2004001809A8
公开(公告)日：2004-05-13
申请号：PCT/US0319984
申请日：2003-06-23
申请人： AVIZA TECH INC , HELMS JR AUBREY L , KAPKIN KEREM , LEE SANG-IN , SENZAKI YOSHIHIDE
发明人： HELMS JR AUBREY L , KAPKIN KEREM , LEE SANG-IN , SENZAKI YOSHIHIDE
IPC分类号： H01L21/302 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/314 , H01L21/316
CPC分类号： H01L21/3141 , C23C16/45536 , C23C16/45542 , C23C16/482 , H01L21/31645
摘要： A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate (14) is placed into a reaction chamber (10) and a gaseous precursor is introduced into the reaction chamber (10). Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate (14) to form a radical terminated surface on the substrate (14). The reaction chamber (10) is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate (14). Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate (14).
摘要翻译：提供了一种用于能量辅助原子层沉积和去除电介质膜的方法。在一个实施例中，将衬底（14）放置在反应室（10）中，并将气态前体引入反应室（10）。通过电磁辐射的脉冲提供能量，其形成气态前体的自由基物质。自由基物质与基材（14）的表面反应以在基材（14）上形成基团封端的表面。吹扫反应室（10）并引入第二气态前体。启动第二电磁辐射脉冲并形成第二自由基物质。第二气体的第二自由基物质与表面反应以在基底（14）上形成膜。或者，可以选择气态物质以产生导致从衬底（14）的表面去除材料的自由基。

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