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1. 发明申请

WO2006088284A1 METHOD OF DEPOSITING THIN FILM 审中-公开
标题翻译：沉积薄膜的方法
公开(公告)号：WO2006088284A1
公开(公告)日：2006-08-24
申请号：PCT/KR2005/004286
申请日：2005-12-14
申请人： IPS LTD. , SEO, Tae Wook , PARK, Young Hoon , LEE, Ki Hoon , LEE, Sahng Kyoo
发明人： SEO, Tae Wook , PARK, Young Hoon , LEE, Ki Hoon , LEE, Sahng Kyoo
IPC分类号： C23C16/30
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76861
摘要： Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1 - 6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1 - 6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.
摘要翻译：公开了一种沉积薄膜的方法，其中薄膜连续地沉积到一个室中，并且将1-6个晶片装入室中。在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，以便保持第一工艺间隙，（c）移动晶片块使得第一工艺间隙改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e）卸载沉积有Ti / TiN薄膜的基板。如果可以在一个室中的1-6个衬底上连续沉积Ti / TiN薄膜，则可以在PM周期内在4个室中仅设置一个室，从而可以显着提高簇工具的工作比。当在一个室中连续沉积Ti / TiN时，将衬底从Ti室移动到TiN室所需的时间减少，因此每单位时间衬底的处理效率显着提高。

2. 发明申请

WO2006059851A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR 审中-公开
标题翻译：制造半导体的方法和装置
公开(公告)号：WO2006059851A1
公开(公告)日：2006-06-08
申请号：PCT/KR2005/004012
申请日：2005-11-28
申请人： IPS LTD. , LEE, Ki Hoon , PARK, Young Hoon , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
发明人： LEE, Ki Hoon , PARK, Young Hoon , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/3146 , Y10S438/952
摘要： Disclosed herein is a method and apparatus for manufacturing a semiconductor, suitable for use in the formation of an amorphous carbon anti-reflective film having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of manufacturing a semiconductor for the formation of an amorphous carbon anti-reflective film according to this invention includes (a) depositing an amorphous organic carbon film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the amorphous organic carbon film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from ones to tens of nm using an atomic layer deposition process. Therefore, an ultra-thin film having etching resistance is formed on or in the amorphous carbon anti-reflective film and the density and compressive stress of the amorphous carbon anti-reflective film are increased, thus increasing etching selectivity.
摘要翻译：本文公开了一种用于制造半导体的方法和装置，其适用于形成具有高选择性的无定形碳抗反射膜，通过提高耐蚀性，同时防反射率相关的消光系数保持较低。根据本发明的用于形成无定形碳抗反射膜的半导体的制造方法包括（a）在基底的底膜上沉积无定形有机碳膜; 和（b）向无定形有机碳膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F或 aC：Si，具有高选择性，使用原子层沉积工艺达到一至几十nm的厚度。因此，在非晶碳抗反射膜上或其中形成具有耐腐蚀性的超薄膜，并且提高了无定形碳抗反射膜的密度和压缩应力，从而提高了蚀刻选择性。

3. 发明申请

WO2005112083A1 CYCLIC PULSED PLASMA ATOMIC LAYER DEPOSITION METHOD 审中-公开
标题翻译：循环脉冲等离子体原子层沉积法
公开(公告)号：WO2005112083A1
公开(公告)日：2005-11-24
申请号：PCT/KR2005/001385
申请日：2005-05-12
申请人： IPS LTD. , PARK, Young-Hoon , LIM, Hong-Joo , LEE, Sahng-Kyoo , SEO, Tae-Wook , CHANG, Ho-Seung
发明人： PARK, Young-Hoon , LIM, Hong-Joo , LEE, Sahng-Kyoo , SEO, Tae-Wook , CHANG, Ho-Seung
IPC分类号： H01L21/205
CPC分类号： C23C16/45542 , C23C16/50
摘要： Provided is a method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber. The method is achieved by supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber, stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas, passing reaction gas through a reaction gas activation unit and supplying the reaction gas to the reaction chamber, applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber, stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas, and sequentially repeating the above operations until a thin film having a desired thickness is formed.
摘要翻译：提供了一种沉积循环脉冲等离子体原子层以在反应室中的基板的表面上沉积薄膜的方法。该方法通过将源气体供应到反应室中以被吸收在装载在反应室中的基板的表面上，停止源气体的供给，清除残留在反应室中的源气体而不被供给吹扫而被吸收气体，连续供给吹扫气体，使反应气体通过反应气体活化单元，将反应气体供给反应室，在反应室内的压力稳定的状态下向反应室施加RF功率，作为活化气体将反应气体供给到反应室，停止RF功率的施加和反应气体的供给，用持续供给的吹扫气体清洗残留在反应室中的反应气体，停止供给吹扫气体，依次重复上述操作，直到形成具有期望厚度的薄膜。

4. 发明申请

WO2007094572A1 APPARATUS FOR GENERATING REMOTE PLASMA 审中-公开
标题翻译：用于产生远程等离子体的装置
公开(公告)号：WO2007094572A1
公开(公告)日：2007-08-23
申请号：PCT/KR2007/000414
申请日：2007-01-24
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY , JEON, Hyeong-Tag , KIM, In-Hoe , KIM, Seok-Hoon , CHUNG, Chin-Wook , LEE, Sahng-Kyoo
发明人： JEON, Hyeong-Tag , KIM, In-Hoe , KIM, Seok-Hoon , CHUNG, Chin-Wook , LEE, Sahng-Kyoo
IPC分类号： H05H1/30
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/32357 , H01J37/3244
摘要： Provided is an apparatus for generating remote plasma. The apparatus includes an RF antenna disposed in regard to a chamber, a plasma generating unit formed in an uppermost portion of the chamber, wherein a plurality of plasma generation gas introduction pipes are communicated with the plasma generating unit, a first shower head disposed below the plasma generating unit, and having a plurality of first plasma guide holes, a second shower head disposed below the first shower head, and having a plurality of source/purge gas guide holes and a plurality of second plasma guide holes directly connected to the respective first plasma guide holes, and a source/purge gas introduction unit disposed between the first and second shower heads, wherein a plurality of source/purge gas introduction pipes are uniformly communicated with the source/purge gas introduction unit.
摘要翻译：提供了一种用于产生远程等离子体的装置。该装置包括：关于腔室设置的RF天线，形成在腔室的最上部的等离子体产生单元，其中多个等离子体产生气体导入管与等离子体产生单元连通;第一淋浴喷头，等离子体发生单元，并具有多个第一等离子体引导孔，设置在第一喷淋头下方的第二喷淋头，并且具有多个源/吹扫气体引导孔和多个第二等离子体引导孔，其直接连接到相应的第一等离子体引导孔等离子体引导孔和设置在第一和第二喷淋头之间的源/净化气体引入单元，其中多个源/净化气体引入管与源/净化气体导入单元均匀地连通。

5. 发明申请

WO2005112082A1 CYCLIC PULSED TWO-LEVEL PLASMA ATOMIC LAYER DEPOSITION APPARATUS AND METHOD 审中-公开
标题翻译：循环脉冲两级等离子体原子层沉积装置和方法
公开(公告)号：WO2005112082A1
公开(公告)日：2005-11-24
申请号：PCT/KR2005/001382
申请日：2005-05-12
申请人： IPS LTD. , PARK, Young Hoon , LIM, Hong Joo , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
发明人： PARK, Young Hoon , LIM, Hong Joo , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
IPC分类号： H01L21/205
CPC分类号： C23C16/45538 , C23C16/34 , C23C16/452 , C23C16/45544 , C23C16/50
摘要： Provided is a n apparatus for depositing a cyclic pulsed two-level plasma atomic layer to deposit a thin film on a substrate, which includes a substrate support plate loading and supporting the substrate, a reaction chamber including the substrate support plate and providing reaction space, a process gas supply and control unit supplying process gas such as source gas, reaction gas, and purge gas to the reaction chamber, a source gas supply pipe supplying the source gas from the process gas supply and control unit to the reaction chamber, a reaction gas activation unit activating the reaction gas, a reaction gas supply pipe through which the reaction gas is supplied from the process gas supply and control unit to the reaction chamber via the reaction gas activation unit, a variable RF power supply unit having a function of generating plasma having at least two-level energy intensity in the reaction chamber, and an exhaust unit purging the process gas in the reaction chamber.
摘要翻译：提供了一种用于沉积循环脉冲二级等离子体原子层的装置，以在衬底上沉积薄膜，该衬底包括负载和支撑衬底的衬底支撑板，包括衬底支撑板并提供反应空间的反应室，向反应室供给源气体，反应气体和吹扫气体等处理气体的工艺气体供给控制单元，将来自处理气体供给控制单元的源气体供给到反应室的源气体供给管，反应气体激活反应气体的活化单元，经由反应气体活化单元将反应气体从处理气体供给控制单元供给到反应室的反应气体供给管，具有产生等离子体的功能的可变RF电力供给单元在反应室中具有至少两级能量强度，以及排出单元，其净化反应室中的处理气体。

6. 发明申请

WO2005022618A1 METHOD FOR DEPOSITING THIN FILM ON WAFER 审中-公开
标题翻译：在薄膜上沉积薄膜的方法
公开(公告)号：WO2005022618A1
公开(公告)日：2005-03-10
申请号：PCT/KR2004/002166
申请日：2004-08-28
申请人： IPS LTD. , PARK, Young-Hoon , LEE, Sahng-Kyoo , SEO, Tae-Wook , CHANG, Ho-Seung
发明人： PARK, Young-Hoon , LEE, Sahng-Kyoo , SEO, Tae-Wook , CHANG, Ho-Seung
IPC分类号： H01L21/20
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/4405 , C23C16/452
摘要： Provided is a method of depositing a thin film. The method is performed using a thin film deposition apparatus that includes a reaction chamber having a wafer block located in a chamber to heat a loaded wafer up to a predetermined temperature, a top lid covering the chamber to seal the chamber, and shower head coupled under the top lid and having a first injection hole and a second injection hole, through which a first reaction gas and a second reaction gas are injected into the wafer, a reaction gas supplying unit supplying the first and second reaction gases into the reaction chamber, and a gas heating path unit installed on a second conveying line between first and second conveying lines connecting the reaction chamber and the reaction gas supplying unit to heat the gas passing through itself, and the method includes the operations of: loading the wafer on the wafer block; depositing a thin film by injecting the first reaction gas and the second reaction gas that is thermally activated onto the wafer through the first and second injection holes; flowing a heat treatment gas including an H element onto the thin film to reduce impurities included in the thin film; and unloading the wafer, on which the thin film is deposited, from the wafer block. If the second reaction gas has a temperature of T1 before passing through the gas heating path unit and a temperature of T2 after passing through the gas heating path unit, T2 is higher than T1, and if the heat treatment gas has a temperature of T1 before passing through the gas heating path unit and a temperature of T3 after passing through the gas heating path unit, T3 is same as T1 or higher.
摘要翻译：提供了沉积薄膜的方法。该方法使用薄膜沉积设备进行，该薄膜沉积设备包括具有位于室中的晶片块以将加载的晶片加热至预定温度的反应室，覆盖室以密封室的顶盖以及耦合在下面的淋浴头所述顶盖具有第一注入孔和第二注入孔，将第一反应气体和第二反应气体注入到所述晶片中，将所述第一和第二反应气体供给到所述反应室中的反应气体供给单元，以及气体加热路径单元，安装在连接反应室和反应气体供给单元的第一和第二输送管线之间的第二输送管线上，以加热通过其自身的气体，并且该方法包括以下操作：将晶片装载在晶片块 ; 通过将第一反应气体和热活化的第二反应气体通过第一和第二注入孔注入到晶片上来沉积薄膜; 使包含H元素的热处理气体流到薄膜上以减少薄膜中包含的杂质; 并从晶片块上卸载其上沉积薄膜的晶片。如果第二反应气体在通过气体加热路径单元之前具有T1的温度，并且在通过气体加热路径单元之后的温度为T2，则T2高于T1，并且如果热处理气体的温度为T1之前的温度通过气体加热路径单元，通过气体加热路径单元后的T3的温度T3与T1以上相同。

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