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1. 发明申请

WO2007094572A1 APPARATUS FOR GENERATING REMOTE PLASMA 审中-公开
标题翻译：用于产生远程等离子体的装置
公开(公告)号：WO2007094572A1
公开(公告)日：2007-08-23
申请号：PCT/KR2007/000414
申请日：2007-01-24
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY , JEON, Hyeong-Tag , KIM, In-Hoe , KIM, Seok-Hoon , CHUNG, Chin-Wook , LEE, Sahng-Kyoo
发明人： JEON, Hyeong-Tag , KIM, In-Hoe , KIM, Seok-Hoon , CHUNG, Chin-Wook , LEE, Sahng-Kyoo
IPC分类号： H05H1/30
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/32357 , H01J37/3244
摘要： Provided is an apparatus for generating remote plasma. The apparatus includes an RF antenna disposed in regard to a chamber, a plasma generating unit formed in an uppermost portion of the chamber, wherein a plurality of plasma generation gas introduction pipes are communicated with the plasma generating unit, a first shower head disposed below the plasma generating unit, and having a plurality of first plasma guide holes, a second shower head disposed below the first shower head, and having a plurality of source/purge gas guide holes and a plurality of second plasma guide holes directly connected to the respective first plasma guide holes, and a source/purge gas introduction unit disposed between the first and second shower heads, wherein a plurality of source/purge gas introduction pipes are uniformly communicated with the source/purge gas introduction unit.
摘要翻译：提供了一种用于产生远程等离子体的装置。该装置包括：关于腔室设置的RF天线，形成在腔室的最上部的等离子体产生单元，其中多个等离子体产生气体导入管与等离子体产生单元连通;第一淋浴喷头，等离子体发生单元，并具有多个第一等离子体引导孔，设置在第一喷淋头下方的第二喷淋头，并且具有多个源/吹扫气体引导孔和多个第二等离子体引导孔，其直接连接到相应的第一等离子体引导孔等离子体引导孔和设置在第一和第二喷淋头之间的源/净化气体引入单元，其中多个源/净化气体引入管与源/净化气体导入单元均匀地连通。

2. 发明申请

WO2006014034A1 REMOTE PLASMA ATOMIC LAYER DEPOSITION APPARATUS AND METHOD USING DC BIAS 审中-公开
标题翻译：远程等离子体原子层沉积装置和使用直流偏置的方法
公开(公告)号：WO2006014034A1
公开(公告)日：2006-02-09
申请号：PCT/KR2004/001962
申请日：2004-08-04
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY , JEON, Hyeong-Tag , KIM, Un-Jung , KIM, Ju-Youn , KIM, Jin-Woo
发明人： JEON, Hyeong-Tag , KIM, Un-Jung , KIM, Ju-Youn , KIM, Jin-Woo
IPC分类号： H01L21/20
CPC分类号： C23C16/45542 , C23C16/452 , C23C16/45525 , C23C16/45544 , C23C16/45565 , C23C16/45574 , C30B25/105 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H05H3/02
摘要： A conventional plasma applied ALD apparatus has a problem in that physical shock is directly imposed on a substrate and a thin film thereby damaging the thin film. Further, many reports have said that since an apparatus for controlling plasma energy is not arranged well, the thin film is not formed uniformly due to plasma nonuniformity. Therefore, there is provided a remote plasma atomic layer deposition apparatus using a DC bias comprising: a reaction chamber having an inner space; a substrate supporting body on which a substrate on which a thin film is to be formed is loaded arranged at one side of the inner space of the reaction chamber; a remote plasma generating unit arranged outside of the reaction chamber to supply a remote plasma into the inner space of the reaction chamber; a DC bias unit controlling energy of the remote plasma; and a source gas supply unit supplying a source gas for forming the thin film into the reaction chamber.
摘要翻译：常规的等离子体涂覆的ALD装置具有直接施加在基板和薄膜上的物理冲击从而损坏薄膜的问题。此外，许多报道说，由于用于控制等离子体能量的装置不能很好地布置，所以由于等离子体不均匀性而不能均匀地形成薄膜。因此，提供了使用DC偏压的远程等离子体原子层沉积装置，包括：具有内部空间的反应室; 在反应室的内部空间的一侧设置有基板支撑体，在基板支撑体上形成有要形成薄膜的基板，远程等离子体生成单元，其布置在反应室的外部，以将远程等离子体供应到反应室的内部空间中; DC偏压单元，控制远程等离子体的能量; 以及源气体供给单元，其将用于将薄膜形成的源气体供给到反应室中。

3. 发明申请

WO2012134070A3 GAS-INJECTION APPARATUS, ATOMIC LAYER DEPOSITION APPARATUS, AND ATOMIC LAYER DEPOSITION METHOD USING THE APPARATUS 审中-公开
标题翻译：气体注入装置，原子层沉积装置以及使用该装置的原子层沉积方法
公开(公告)号：WO2012134070A3
公开(公告)日：2012-11-29
申请号：PCT/KR2012001659
申请日：2012-03-07
申请人： IUCF HYU , JEON HYEONG TAG , PARK TAE YONG , LEE JAE SANG , CHOI DONG JIN , JEON HEE YOUNG , PARK JIN GYU
发明人： JEON HYEONG TAG , PARK TAE YONG , LEE JAE SANG , CHOI DONG JIN , JEON HEE YOUNG , PARK JIN GYU
IPC分类号： C23C16/455 , C23C16/44 , C23C16/46 , H01L21/205
CPC分类号： C23C16/45544 , C23C16/45578
摘要： The present invention relates to a gas-injection apparatus, to an atomic layer deposition apparatus, and to an atomic layer deposition method using the apparatus. The gas-injection apparatus is configured in the shape of a single pipe. Gas is supplied onto a substrate through the central portion of the gas-injection apparatus, and simultaneously, gas supplied through gas-intake holes formed in specific portions along an outer surface of a gas supply pipe is suctioned. Thus, when the gas-injection apparatus is disposed near the substrate, the supply and suction of the gas may be performed at the same time. Here, since a deposition process is performed at a normal pressure, it is unnecessary to provide an additional apparatus and set aside time to produce a vacuum state. Also, since consecutive processes are able to be carried out, pre- or post-processes may be performed together at the same time. In addition, a plurality of source injection apparatuses may be provided to form a multi-component compound. In this case, the type of heat source and supplied heat energy may be individually adapted for each source decomposition temperature.
摘要翻译：气体注入设备，原子层沉积设备以及使用该设备的原子层沉积方法技术领域本发明涉气体注入装置构造成单个管的形状。通过气体注入装置的中心部分将气体供给到基板上，同时，通过沿着气体供给管的外表面形成在特定部分中的进气孔供给的气体被吸入。因此，当将气体喷射装置设置在基板附近时，可以同时进行气体的供给和吸入。这里，由于沉积工艺是在常压下进行的，所以不需要提供附加装置并且留出时间来产生真空状态。而且，由于能够执行连续的处理，所以预处理或后处理可以同时一起执行。另外，可以提供多个源注射装置以形成多组分化合物。在这种情况下，热源的类型和供应的热能可以针对每个源分解温度单独调整。

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