专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006059851A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR 审中-公开
标题翻译：制造半导体的方法和装置
公开(公告)号：WO2006059851A1
公开(公告)日：2006-06-08
申请号：PCT/KR2005/004012
申请日：2005-11-28
申请人： IPS LTD. , LEE, Ki Hoon , PARK, Young Hoon , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
发明人： LEE, Ki Hoon , PARK, Young Hoon , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/3146 , Y10S438/952
摘要： Disclosed herein is a method and apparatus for manufacturing a semiconductor, suitable for use in the formation of an amorphous carbon anti-reflective film having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of manufacturing a semiconductor for the formation of an amorphous carbon anti-reflective film according to this invention includes (a) depositing an amorphous organic carbon film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the amorphous organic carbon film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from ones to tens of nm using an atomic layer deposition process. Therefore, an ultra-thin film having etching resistance is formed on or in the amorphous carbon anti-reflective film and the density and compressive stress of the amorphous carbon anti-reflective film are increased, thus increasing etching selectivity.
摘要翻译：本文公开了一种用于制造半导体的方法和装置，其适用于形成具有高选择性的无定形碳抗反射膜，通过提高耐蚀性，同时防反射率相关的消光系数保持较低。根据本发明的用于形成无定形碳抗反射膜的半导体的制造方法包括（a）在基底的底膜上沉积无定形有机碳膜; 和（b）向无定形有机碳膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F或 aC：Si，具有高选择性，使用原子层沉积工艺达到一至几十nm的厚度。因此，在非晶碳抗反射膜上或其中形成具有耐腐蚀性的超薄膜，并且提高了无定形碳抗反射膜的密度和压缩应力，从而提高了蚀刻选择性。

2. 发明申请

WO2005112082A1 CYCLIC PULSED TWO-LEVEL PLASMA ATOMIC LAYER DEPOSITION APPARATUS AND METHOD 审中-公开
标题翻译：循环脉冲两级等离子体原子层沉积装置和方法
公开(公告)号：WO2005112082A1
公开(公告)日：2005-11-24
申请号：PCT/KR2005/001382
申请日：2005-05-12
申请人： IPS LTD. , PARK, Young Hoon , LIM, Hong Joo , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
发明人： PARK, Young Hoon , LIM, Hong Joo , LEE, Sahng Kyoo , SEO, Tae Wook , CHANG, Ho Seung
IPC分类号： H01L21/205
CPC分类号： C23C16/45538 , C23C16/34 , C23C16/452 , C23C16/45544 , C23C16/50
摘要： Provided is a n apparatus for depositing a cyclic pulsed two-level plasma atomic layer to deposit a thin film on a substrate, which includes a substrate support plate loading and supporting the substrate, a reaction chamber including the substrate support plate and providing reaction space, a process gas supply and control unit supplying process gas such as source gas, reaction gas, and purge gas to the reaction chamber, a source gas supply pipe supplying the source gas from the process gas supply and control unit to the reaction chamber, a reaction gas activation unit activating the reaction gas, a reaction gas supply pipe through which the reaction gas is supplied from the process gas supply and control unit to the reaction chamber via the reaction gas activation unit, a variable RF power supply unit having a function of generating plasma having at least two-level energy intensity in the reaction chamber, and an exhaust unit purging the process gas in the reaction chamber.
摘要翻译：提供了一种用于沉积循环脉冲二级等离子体原子层的装置，以在衬底上沉积薄膜，该衬底包括负载和支撑衬底的衬底支撑板，包括衬底支撑板并提供反应空间的反应室，向反应室供给源气体，反应气体和吹扫气体等处理气体的工艺气体供给控制单元，将来自处理气体供给控制单元的源气体供给到反应室的源气体供给管，反应气体激活反应气体的活化单元，经由反应气体活化单元将反应气体从处理气体供给控制单元供给到反应室的反应气体供给管，具有产生等离子体的功能的可变RF电力供给单元在反应室中具有至少两级能量强度，以及排出单元，其净化反应室中的处理气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式