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    • 2. 发明申请
    • VOLTAGE TOLERANT FLOATING N-WELL CIRCUIT
    • 容许电压的浮动N阱电路
    • WO2009018285A2
    • 2009-02-05
    • PCT/US2008071494
    • 2008-07-29
    • QUALCOMM INCGUPTA ABHEEKSRINIVAS VAISHNAVMOHAN VIVEK
    • GUPTA ABHEEKSRINIVAS VAISHNAVMOHAN VIVEK
    • H03K19/003
    • H03K19/018592H03K19/00384
    • Methods and apparatuses are presented for voltage tolerant floating N-well circuits. An apparatus for mitigating leakage currents caused by input voltages is presented which includes a first transistor having a source coupled to a positive voltage supply, and a drain coupled to a floating node. The apparatus may further include a controllable pull down path coupled to a negative voltage supply and the first transistor, wherein the controllable pull-down path is configured to turn on the first transistor and pull-up the floating node during a first state. The apparatus may further include a second transistor having a source coupled to a gate of the first transistor, and drain coupled to the floating node, wherein the second transistor is configured to place the floating node at a floating potential during a second state.
    • 提出了用于耐压浮置N阱电路的方法和装置。 提出了一种用于减轻由输入电压引起的泄漏电流的设备,其包括具有耦合到正电压源的源极和耦合到浮动节点的漏极的第一晶体管。 该装置还可以包括耦合到负电压电源和第一晶体管的可控下拉路径,其中可控下拉路径被配置为在第一状态期间导通第一晶体管并上拉浮动节点。 该装置还可以包括第二晶体管,该第二晶体管具有耦合到第一晶体管的栅极的源极和耦合到浮动节点的漏极,其中第二晶体管被配置为在第二状态期间将浮置节点置于浮动电位。