会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明申请
    • BREAK BEFORE MAKE PREDRIVER AND LEVEL-SHIFTER
    • 在做预处理和水平切换之前
    • WO2005107073A1
    • 2005-11-10
    • PCT/US2005/012479
    • 2005-04-12
    • QUALCOMM INCORPORATEDSRINIVAS, VaishnavMOHAN, Vivek
    • SRINIVAS, VaishnavMOHAN, Vivek
    • H03K19/00
    • H03K19/0013H03K3/356113H03K17/08122
    • A break-before-make predriver for disabling a PFET of an output driver before enabling an NFET, and vice versa. The predriver includes an input inverter, two cross-coupled inverters, and output buffers. The predriver provides enhanced break-before-make action through sizing the NFETs larger than the PFETs in the predriver's cross-coupled inverters. The input inverter, the cross-coupled inverters and the first and second output buffers are sized with respect to each other such that substantially equal break before make action is provided on both rising and falling edges. The predriver also includes level-shifting capabilities through a different voltage supply at the PFETs of the cross-coupled inverter. The predriver also includes two data output nodes for connection to the two inputs of an output driver. The predriver provides for tristate action by disabling the signal from the predriver output nodes.
    • 用于在启用NFET之前禁用输出驱动器的PFET的前置制造预驱动器,反之亦然。 预驱动器包括输入反相器,两个交叉耦合的反相器和输出缓冲器。 预驱动器通过将大于预驱动器交叉耦合逆变器中的PFET的NFET尺寸进行调整,从而提供增强的“先行后制”动作。 输入反相器,交叉耦合反相器和第一和第二输出缓冲器相对于彼此大小,使得在上升沿和下降沿两者之间提供在作用之前基本相等的断开。 预驱动器还包括通过交叉耦合逆变器的PFET处的不同电压源的电平转换能力。 预驱动器还包括用于连接到输出驱动器的两个输入的两个数据输出节点。 预驱动器通过禁用来自预驱动输出节点的信号来提供三态动作。
    • 8. 发明申请
    • VOLTAGE TOLERANT FLOATING N-WELL CIRCUIT
    • 容许电压的浮动N阱电路
    • WO2009018285A2
    • 2009-02-05
    • PCT/US2008071494
    • 2008-07-29
    • QUALCOMM INCGUPTA ABHEEKSRINIVAS VAISHNAVMOHAN VIVEK
    • GUPTA ABHEEKSRINIVAS VAISHNAVMOHAN VIVEK
    • H03K19/003
    • H03K19/018592H03K19/00384
    • Methods and apparatuses are presented for voltage tolerant floating N-well circuits. An apparatus for mitigating leakage currents caused by input voltages is presented which includes a first transistor having a source coupled to a positive voltage supply, and a drain coupled to a floating node. The apparatus may further include a controllable pull down path coupled to a negative voltage supply and the first transistor, wherein the controllable pull-down path is configured to turn on the first transistor and pull-up the floating node during a first state. The apparatus may further include a second transistor having a source coupled to a gate of the first transistor, and drain coupled to the floating node, wherein the second transistor is configured to place the floating node at a floating potential during a second state.
    • 提出了用于耐压浮置N阱电路的方法和装置。 提出了一种用于减轻由输入电压引起的泄漏电流的设备,其包括具有耦合到正电压源的源极和耦合到浮动节点的漏极的第一晶体管。 该装置还可以包括耦合到负电压电源和第一晶体管的可控下拉路径,其中可控下拉路径被配置为在第一状态期间导通第一晶体管并上拉浮动节点。 该装置还可以包括第二晶体管,该第二晶体管具有耦合到第一晶体管的栅极的源极和耦合到浮动节点的漏极,其中第二晶体管被配置为在第二状态期间将浮置节点置于浮动电位。