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1. 发明申请

WO2006086364A1 MEMORY ELEMENT USING ACTIVE LAYER OF BLENDED MATERIALS 审中-公开
标题翻译：使用活性层混合材料的记忆元件
公开(公告)号：WO2006086364A1
公开(公告)日：2006-08-17
申请号：PCT/US2006/004239
申请日：2006-02-06
申请人： SPANSION LLC , GAUN, David , KAZA, Swaroop , SPITZER, Stuart , KRIEGER, Juri , KINGSBOROUGH, Richard
发明人： GAUN, David , KAZA, Swaroop , SPITZER, Stuart , KRIEGER, Juri , KINGSBOROUGH, Richard
IPC分类号： H01L51/05 , H01L51/30 , G11C13/02
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016
摘要： The present memory device (130) has first and second electrodes (132, 140), a passive layer (136) between the first and second electrodes (132, 140) and on and in contact with the first electrode (132), and an active layer (138) between the first and second electrodes (132, 140) and on and in contact with the passive layer (136) and second electrode (140), for receiving a charged specie from the passive layer (136). The active layer (138) is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer (138), i.e., preventing a localized injection of the charged species. These features result in a memory device (130) with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.
摘要翻译：本存储器件（130）具有第一和第二电极（132,140），位于第一和第二电极（132,140）之间并且与第一电极（132）接触并与第一电极（132）接触的无源层（136）在第一和第二电极（132,140）之间并且与无源层（136）和第二电极（140）接触并与其接触的用于从被动层（136）接收带电物质的有源层（138）。活性层（138）是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进带电物质在活性层（138）中快速且基本上均匀的分布），即防止带电物质的局部注射。这些特征导致具有改进的稳定性，更可控的导通状态电阻，改进的开关速度和较低编程电压的存储器件（130）。

2. 发明申请

WO2007015864A2 PROGRAM/ERASE WAVESHAPING CONTROL TO INCREASE DATA RETENTION OF A MEMORY CELL 审中-公开
标题翻译：程序/擦除波形控制以增加记忆体的数据保留
公开(公告)号：WO2007015864A2
公开(公告)日：2007-02-08
申请号：PCT/US2006027853
申请日：2006-07-17
申请人： SPANSION LLC , FANG TZU-NING , BILL COLIN S , CAI WEI DAISY , GAUN DAVID , GERSHON EUGENE
发明人： FANG TZU-NING , BILL COLIN S , CAI WEI DAISY , GAUN DAVID , GERSHON EUGENE
IPC分类号： G11C13/02
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0007 , G11C13/0016 , G11C13/004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/32 , G11C2213/71 , G11C2213/77
摘要： System(s) and method(s) of improving and controlling memory cell data retention are disclosed. A particular pulse width and magnitude is generated and applied to a memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes. The current across the memory cell is detected and a lower input pulse is sent to the memory cell. Application of the lower pulse controls the data retention of the memory cell without disturbing the final programming state of the memory cell.
摘要翻译：公开了改进和控制存储单元数据保持的系统和方法。产生特定的脉冲宽度和幅度并将其施加到由至少两个电极制成的存储器单元，该至少两个电极在至少两个电极之间具有可控导电的介质。检测存储器单元中的电流，并将较低的输入脉冲发送到存储单元。下部脉冲的应用控制存储器单元的数据保持，而不会干扰存储单元的最终编程状态。

3. 发明申请

WO2007005872A1 RESITIVE MEMORY DEVICE WITH IMPROVED DATA RETENTION 审中-公开
标题翻译：具有改进的数据保留的可重构存储器件
公开(公告)号：WO2007005872A1
公开(公告)日：2007-01-11
申请号：PCT/US2006/026044
申请日：2006-06-30
申请人： SPANSION LLC , SOKOLIK, Igor , KINGSBOROUGH, Richard , GAUN, David , KAZA, Swaroop , SPITZER, Stuart , PANGRLE, Suzette, K.
发明人： SOKOLIK, Igor , KINGSBOROUGH, Richard , GAUN, David , KAZA, Swaroop , SPITZER, Stuart , PANGRLE, Suzette, K.
IPC分类号： G11C13/02 , H01L27/28
CPC分类号： G11C13/0016 , B82Y10/00 , G11C13/0014 , G11C2213/11 , G11C2213/56
摘要： The present memory device (130) includes first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138) and an active layer (136) between the first and second electrodes (132, 138), the active layer (136) being of a material containing randomly oriented pores which are interconnected to form passages through the active layer (136).
摘要翻译：本存储器件（130）包括第一和第二电极（132,138），位于第一和第二电极（132,138）之间的钝化层（134）和第一和第二电极之间的有源层（136），138），所述活性层（136）是含有随机取向的孔的材料，其互连以形成通过所述活性层（136）的通道。

4. 发明申请

WO2006133419A1 METHOD OF PROGRAMMING A MEMORY DEVICE WITH DIFFERENT LEVELS OF CURRENT 审中-公开
标题翻译：编程具有不同电流水平的存储器件的方法
公开(公告)号：WO2006133419A1
公开(公告)日：2006-12-14
申请号：PCT/US2006/022510
申请日：2006-06-07
申请人： SPANSION LLC , KAZA, Swaroop , GAUN, David , SPITZER, Stuart , KRIGER, Juri
发明人： KAZA, Swaroop , GAUN, David , SPITZER, Stuart , KRIGER, Juri
IPC分类号： G11C11/56 , G11C13/02 , G11C16/02
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/0009 , G11C13/0069 , G11C2013/0078 , G11C2213/15 , G11C2213/56 , G11C2213/72 , G11C2213/79
摘要： The present invention is a method of programming a memory device (130) , wherein different levels or magnitudes of current may be applied to and imposed on the memory device (130) so that any one of a plurality of memory states may be realized. The application of a selected level of current to the memory device provides a memory device resistance characteristic corresponding to the selected level of current . A read step indicates the so determined state of the memory device (130) .
摘要翻译：本发明是一种对存储器件（130）进行编程的方法，其中不同的电流等级或大小可以施加到存储器件（130）上并施加到存储器件（130）上，使得可以实现多个存储器状态中的任何一个。将选定电平的电流施加到存储器件提供对应于所选择的电流电平的存储器件电阻特性。读取步骤指示如此确定的存储器件（130）的状态。

5. 发明申请

WO2006102392A1 VARIABLE BREAKDOWN CHARACTERISTIC DIODE 审中-公开
标题翻译：可变断开特性二极管
公开(公告)号：WO2006102392A1
公开(公告)日：2006-09-28
申请号：PCT/US2006/010365
申请日：2006-03-22
申请人： SPANSION LLC , GAUN, David , BILL, Colin, S. , KAZA, Swaroop
发明人： GAUN, David , BILL, Colin, S. , KAZA, Swaroop
IPC分类号： H01L51/05 , G11C13/02
CPC分类号： H01L51/0575 , B82Y10/00 , G11C11/5664 , G11C11/5692 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/11 , G11C2213/12 , G11C2213/15 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/285
摘要： A memory cell (100, 200, 904, 1006) made of at least two electrodes (110, 120, 906, 908, 1002, 1004) with a controllably conductive media (130, 910) between the at least two electrodes (110, 120, 906, 908, 1002, 1004) is disclosed. When an external stimuli , such as an applied electric field, is imposed upon the first and second electrode (110, 120, 906, 908, 1002, 1004), ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell (100, 200, 904, 1006). The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices containing the memory cell(s) (100, 200, 904, 1006) are also disclosed.
摘要翻译：由至少两个电极（110,120,906,908,1002,1004）制成的存储单元（100,200,904,1006）在所述至少两个电极之间具有可控导电介质（130,910） 120，906，908，1002，1004）。当诸如施加的电场的外部刺激施加在第一和第二电极（110,120,906,908,1002,1004）上时，离子移动并掺杂和/或去透明聚合物。用于掺杂聚合物的应用外部刺激物大于施加的外部刺激以操作存储器单元（100,200,904,1006）。该聚合物用作具有电特性的可变击穿特性二极管，这是掺杂度的结果。存储元件可以具有电流受限读取信号。还公开了制造存储器件/单元的方法，使用存储器件/单元的方法以及包含存储单元（100,200,804,1006）的器件。

6. 发明申请

WO2007015864A3 PROGRAM/ERASE WAVESHAPING CONTROL TO INCREASE DATA RETENTION OF A MEMORY CELL 审中-公开
公开(公告)号：WO2007015864A3
公开(公告)日：2007-02-08
申请号：PCT/US2006/027853
申请日：2006-07-17
申请人： SPANSION LLC , FANG, Tzu-ning , BILL, Colin, S. , CAI, Wei, Daisy , GAUN, David , GERSHON, Eugene
发明人： FANG, Tzu-ning , BILL, Colin, S. , CAI, Wei, Daisy , GAUN, David , GERSHON, Eugene
IPC分类号： G11C13/02
摘要： System(s) and method(s) of improving and controlling memory cell data retention are disclosed. A particular pulse width and magnitude is generated and applied to a memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes. The current across the memory cell is detected and a lower input pulse is sent to the memory cell. Application of the lower pulse controls the data retention of the memory cell without disturbing the final programming state of the memory cell.

7. 发明申请

WO2006023337A1 SYSTEMS AND METHODS FOR ADJUSTING PROGRAMMING THRESHOLDS OF POLYMER MEMORY CELLS 审中-公开
标题翻译：用于调节聚合物记忆细胞编程阈值的系统和方法
公开(公告)号：WO2006023337A1
公开(公告)日：2006-03-02
申请号：PCT/US2005/028338
申请日：2005-08-08
申请人： SPANSION LLC , SPITZER, Stuart , KRIEGER, Juri, H. , GAUN, David
发明人： SPITZER, Stuart , KRIEGER, Juri, H. , GAUN, David
IPC分类号： G11C13/02
CPC分类号： G11C13/0016 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/56
摘要： Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's (215, 640) operation by applying thereupon a regulated electric field and/or voltage pulse width, during a post fabrication stage. Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell (215, 640), to increase flexibility in circuit design. Accordingly, the present invention supplies both a current-voltage domain, and/or a frequency-time domain, to facilitate adjusting the program thresholds of the polymer memory cell (215, 640).
摘要翻译：提供了系统和方法，用于通过在后制造阶段中施加调节的电场和/或电压脉冲宽度来调整与聚合物存储器单元（215,640）相关的阈值。编程阈值的这种定制通常可以在对存储器单元（215,640）的编程的任何周期中获得，以增加电路设计的灵活性。因此，本发明提供电流 - 电压域和/或频率 - 时域，以便于调整聚合物存储单元（215,640）的程序阈值。

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