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1. 发明申请

WO2011104198A3 METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY 审中-公开
标题翻译：用激光能量辐照半导体材料表面的方法和设备
公开(公告)号：WO2011104198A3
公开(公告)日：2011-09-01
申请号：PCT/EP2011/052498
申请日：2011-02-21
申请人： EXCICO FRANCE , BESAUCÈLE, Hervé , GODARD, Bruno , DUTEMS, Cyril
发明人： BESAUCÈLE, Hervé , GODARD, Bruno , DUTEMS, Cyril
IPC分类号： B23K26/06 , H01L21/324 , G02B27/09
摘要： The present invention is related to an apparatus for irradiating semiconductor material comprising: - a laser generating a primary laser beam; - an optical system; - and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams; characterized in that the shape and/or size of the individual apertures corresponds to the shape and/or size of a common region of a semiconductor material layer to be irradiated, and that the optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the present invention is related to the use of such an apparatus in semiconductor device manufacturing.
摘要翻译：本发明涉及一种用于照射半导体材料的设备，其包括： - 产生主激光束的激光器; - 光学系统; - 用于成形主激光束的装置，包括用于将主激光束成形为多个次激光束的多个孔; 其特征在于，各个孔的形状和/或尺寸对应于待照射的半导体材料层的公共区域的形状和/或尺寸，并且光学系统适于叠加次级激光束以照射所述共同的地区。此外，本发明涉及这种设备在半导体器件制造中的用途。

2. 发明申请

WO2013120867A1 METHOD FOR FORMING A GETTERING LAYER 审中-公开
标题翻译：形成捕获层的方法
公开(公告)号：WO2013120867A1
公开(公告)日：2013-08-22
申请号：PCT/EP2013/052813
申请日：2013-02-13
申请人： EXCICO FRANCE
发明人： HUET, Karim
IPC分类号： H01L21/268 , H01L21/322
CPC分类号： H01L21/268 , H01L21/3221
摘要： The present invention is directed to a method for forming a gettering layer in a semiconductor substrate comprising: a. exposing a semiconductor substrate to an impurity containing ambient atmosphere, b. subsequently heating a surface of the semiconductor substrate at a temperature above melting temperature by means of laser irradiation.
摘要翻译：本发明涉及一种在半导体衬底中形成吸气层的方法，包括：a。将半导体衬底暴露于含有环境气氛的杂质中，b。随后通过激光照射在高于熔融温度的温度下加热半导体衬底的表面。

3. 发明申请

WO2014177288A1 IMPROVED LOW RESISTANCE CONTACTS FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：改进的半导体器件的低电阻接触
公开(公告)号：WO2014177288A1
公开(公告)日：2014-11-06
申请号：PCT/EP2014/051782
申请日：2014-01-30
申请人： EXCICO FRANCE , UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK
发明人： DUFFY, Ray , SHAYESTEH, Maryam , HUET, Karim
IPC分类号： H01L21/285 , H01L21/268
CPC分类号： H01L21/3247 , H01L21/268 , H01L21/28512 , H01L21/2855 , H01L21/28568 , H01L21/324 , H01L29/0847 , H01L29/16 , H01L29/45 , H01L29/78
摘要： The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.
摘要翻译：本发明提供了一种通过提供锗（Ge）的第一层（120）和第二金属层在基底上形成至少一种金属德国化物接触以提供半导体器件（100）的方法。本发明提供了一种使第二层与第一层具有高能量密度脉冲的步骤，以获得具有与下面的第一（Ge）层基本上平面的界面的德文德金属层（160A）。

4. 发明申请

WO2013149953A1 A METHOD FOR STABILIZING A PLASMA AND AN IMPROVED IONIZATION CHAMBER 审中-公开
标题翻译：一种用于稳定等离子体和改进的离子室的方法
公开(公告)号：WO2013149953A1
公开(公告)日：2013-10-10
申请号：PCT/EP2013/056769
申请日：2013-03-28
申请人： EXCICO FRANCE
发明人： MESTRES, Marc , CECCATO, Paul
IPC分类号： H05G2/00
CPC分类号： H01J47/026 , H01S3/09775 , H05G2/003 , H05G2/008
摘要： The present invention is directed to a method for stabilizing a plasma comprising: a. providing in an ionization chamber a number of high voltage wires and a gas suitable for forming a plasma b. exposing the gas to a high voltage thereby igniting the gas to form the plasma, characterized in that upon ignition the plasma is subjected to an amount of light. In addition, the present invention is directed to the use of such method in generating X-rays. Further, the present invention is directed to an ionization chamber comprising: a. a gas suitable for forming a plasma, and b. a number of high voltage wires for exposing the gas to a high voltage thereby igniting the gas to form the plasma, characterized in that the ionization chamber comprises means for subjecting the plasma upon ignition to an amount of light. Additionally, the present invention relates to an X-ray generator comprising such ionization chamber, and to a laser apparatus comprising such X-ray generator.
摘要翻译：本发明涉及一种稳定血浆的方法，包括：a。在电离室中提供多个高压电线和适于形成等离子体b的气体。将气体暴露于高电压，从而点燃气体以形成等离子体，其特征在于，在着火时，等离子体经受一定量的光。此外，本发明涉及使用这种方法来产生X射线。此外，本发明涉及一种电离室，包括：a。适于形成等离子体的气体，以及b。一些用于将气体暴露于高电压的高压电线，从而点燃气体以形成等离子体，其特征在于，电离室包括用于使等离子体点燃至一定量的光的装置。另外，本发明涉及包括该离子化室的X射线发生器以及包括该X射线发生器的激光装置。

5. 发明申请

WO2012130875A1 METHOD AND APPARATUS FOR FORMING A STRAIGHT LINE PROJECTION ON A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：在半导体基板上形成直线投影的方法和装置
公开(公告)号：WO2012130875A1
公开(公告)日：2012-10-04
申请号：PCT/EP2012/055501
申请日：2012-03-28
申请人： EXCICO FRANCE , GODART, Bruno , MIGOZZI, Jean-Blaise
发明人： GODART, Bruno , MIGOZZI, Jean-Blaise
IPC分类号： H01L21/268 , G02B17/06 , B23K26/00 , B23K26/073
CPC分类号： H01L21/02691 , B23K26/0006 , B23K26/0081 , B23K2203/56 , G02B19/0023 , G02B19/0028 , G02B19/0047 , H01L21/268
摘要： The present invention relates to an apparatus for irradiating a semiconductor comprising a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction, characterized in that the curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution, and that said axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the present invention relates to the use of such apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement.
摘要翻译：本发明涉及一种用于照射包括具有反射表面的曲面镜的半导体的半导体装置，以及产生沿着入射方向入射在曲面镜上的照射光束的点光源，其特征在于，曲面镜和点源形成具有旋转轴的系统，其中点源设置在所述旋转轴线上或附近，并且所述旋转轴线基本上与在半导体衬底上产生的直线投影一致。此外，本发明涉及这种用于制造选择性发射极栅格或用于在扫描运动中照射大面积半导体表面的装置的用途。

6. 发明申请

WO2011104198A2 METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY 审中-公开
标题翻译：激光能量辐射半导体材料表面的方法和装置
公开(公告)号：WO2011104198A2
公开(公告)日：2011-09-01
申请号：PCT/EP2011052498
申请日：2011-02-21
申请人： EXCICO FRANCE , BESAUCELE HERVE , GODARD BRUNO , DUTEMS CYRIL
发明人： BESAUCELE HERVE , GODARD BRUNO , DUTEMS CYRIL
IPC分类号： B23K26/06 , G02B27/09 , H01L21/324
CPC分类号： H01L21/04 , B23K26/0608 , B23K26/066 , B23K26/0673 , B23K26/073 , G02B27/0955 , H01L21/268
摘要： The present invention is related to an apparatus for irradiating semiconductor material comprising: - a laser generating a primary laser beam; - an optical system; - and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams; characterized in that the shape and/or size of the individual apertures corresponds to the shape and/or size of a common region of a semiconductor material layer to be irradiated, and that the optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the present invention is related to the use of such an apparatus in semiconductor device manufacturing.
摘要翻译：本发明涉及一种用于照射半导体材料的设备，包括： - 产生一次激光束的激光; - 光学系统; 以及用于使所述主激光束成形的装置，包括用于将所述主激光束成形为多个次级激光束的多个孔; 其特征在于，各个孔的形状和/或尺寸对应于待照射的半导体材料层的公共区域的形状和/或尺寸，并且该光学系统适于叠加次级激光束以照射所述公共区域。此外，本发明涉及这种装置在半导体器件制造中的应用。

7. 发明申请

WO2014044866A1 A GAS CIRCULATION LOOP FOR A LASER DISCHARGE TUBE 审中-公开
标题翻译：用于激光放电管的气体循环环
公开(公告)号：WO2014044866A1
公开(公告)日：2014-03-27
申请号：PCT/EP2013/069801
申请日：2013-09-24
申请人： EXCICO FRANCE
发明人： CHASTAN, Nicolas , GRELLET, Julien
IPC分类号： H01S3/036 , H01S3/22 , H01S3/223 , H01S3/225
CPC分类号： H01S3/036 , H01S3/03 , H01S3/041
摘要： The present invention is directed to gas circulation loop for a laser discharge tube comprising a gas supply duct (a) and a gas exhaust duct (c), wherein the gas supply duct (a) and/or the gas exhaust duct (c) is elongated in the longitudinal direction of the laser discharge tube (b) and connected to the laser discharge tube (b by an inlet flow distributor and, respectively an outlet flow distributor, adapted for controlled transversal gas inlet and, respectively outlet, over at least part of the laser discharge tube (b), and wherein the inlet flow distributor and/or the outlet flow distributor comprise a plurality of respective inlet channels or outlet channels, characterized in that the ratio between the diameter of the gas supply duct (a) and the diameter of the inlet channels, and/or the ratio between the diameter of the gas exhaust duct (c) and the diameter of the outlet channels is at least 2. Further, the present invention is directed to a laser apparatus comprising such gas circulation loop.
摘要翻译：本发明涉及一种包括气体供应管道（a）和排气管道（c）的激光放电管的气体循环回路，其中气体供应管道（a）和/或排气管道（c）是在激光放电管（b）的纵向方向上延伸并且通过入口流量分配器和分别与适于受控横向气体入口的出口流量分配器连接到激光放电管（b），并且分别出口至少部分地连接，并且其中所述入口流量分配器和/或所述出口流量分配器包括多个相应的入口通道或出口通道，其特征在于，所述气体供应管道（a）的直径与入口通道的直径和/或气体排出管道（c）的直径与出口通道的直径之间的比例至少为2.此外，本发明涉及一种包括这种气体气体的激光设备电路循环。

8. 发明申请

WO2011073082A1 METHOD FOR MAKING A SEMICONDUCTOR DEVICE BY LASER IRRADIATION 审中-公开
标题翻译：通过激光辐照制造半导体器件的方法
公开(公告)号：WO2011073082A1
公开(公告)日：2011-06-23
申请号：PCT/EP2010/069300
申请日：2010-12-09
申请人： EXCICO FRANCE , RACK, Simon
发明人： RACK, Simon
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L21/268 , Y02P80/30
摘要： The present invention is related to a method for making a semiconductor device comprising the steps of : exposing a semiconductor substrate to a process step or sequence of process steps of which at least one process performance parameter is determined in a region of the semiconductor substrate, and irradiating the region with a laser having laser irradiation parameters; characterized in that the irradiation parameters are determined based on the at least one process performance parameter.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括以下步骤：将半导体衬底暴露于在半导体衬底的区域中确定至少一个工艺性能参数的工艺步骤或工艺步骤序列;以及用具有激光照射参数的激光照射该区域; 其特征在于，所述照射参数基于所述至少一个处理性能参数来确定。

9. 发明申请

WO2010115763A1 METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY 审中-公开
标题翻译：激光能量辐射半导体材料表面的方法和装置
公开(公告)号：WO2010115763A1
公开(公告)日：2010-10-14
申请号：PCT/EP2010/054135
申请日：2010-03-29
申请人： EXCICO France , VENTURINI, Julien , GODARD, Bruno , DUTEMS, Cyril , BUCCHIA, Marc
发明人： VENTURINI, Julien , GODARD, Bruno , DUTEMS, Cyril , BUCCHIA, Marc
IPC分类号： B23K26/04 , B23K26/073 , B23K26/08 , B23K26/40 , B23K26/00 , H01L21/20 , B23K101/40
CPC分类号： B23K26/0066 , B23K26/0006 , B23K26/04 , B23K26/073 , B23K26/08 , B23K26/40 , B23K2201/40 , B23K2203/50 , B23K2203/56 , G03F7/70383 , H01L21/02354 , H01L21/02678 , H01L21/268 , H01L23/5258
摘要： The present invention is related to a method for irradiating semiconductor material comprising: selecting a region (a) of a semiconductor material layer surface, the region (a) having a region size; irradiating the region (a) of the semiconductor material layer surface with an excimer laser having a beam spot size (b); and adjusting the beam spot size (b); wherein adjusting the beam spot size (b) comprises variably matching the beam spot size (b) to the selected region size (a). Further the present invention is related to an apparatus for irradiating semiconductor material comprising: an excimer laser for irradiating a selected region (a) of a semiconductor layer surface, the laser having a laser beam spot size (b) to the selected region (a) having a region size; and a means for adjusting the laser beam spot size; wherein that the means for adjusting the laser beam spot size (b) are adapted for variably matching the laser beam spot size (b) to the selected region size (a).
摘要翻译：本发明涉及一种用于照射半导体材料的方法，包括：选择半导体材料层表面的区域（a），具有区域尺寸的区域（a）用具有束斑大小（b）的准分子激光器照射半导体材料层表面的区域（a）; 并调整束斑大小（b）; 其中调整束斑尺寸（b）包括将束斑尺寸（b）可变地匹配到所选择的区域尺寸（a）。此外，本发明涉及一种用于照射半导体材料的装置，包括：准分子激光器，用于照射半导体层表面的选定区域（a），所述激光束具有到选定区域（a）的激光束点尺寸（b）具有区域大小; 以及用于调整激光束光斑尺寸的装置; 其中用于调整激光束光点尺寸（b）的装置适于将激光束光斑尺寸（b）可变地匹配到所选择的区域尺寸（a）。

10. 发明申请

WO2010083867A1 METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY 审中-公开
标题翻译：激光能量辐射半导体材料表面的方法和装置
公开(公告)号：WO2010083867A1
公开(公告)日：2010-07-29
申请号：PCT/EP2009/009180
申请日：2009-12-21
申请人： EXCICO FRANCE , VENTURINI, Julien
发明人： VENTURINI, Julien
IPC分类号： B23K26/00 , B23K26/03
CPC分类号： B23K26/03 , B23K26/0006 , B23K26/0081 , B23K2201/40 , B23K2203/50 , B23K2203/56 , H01L21/02686
摘要： The present invention is related to a method for irradiating semiconductor material comprising: irradiating a region of a semiconductor material layer surface with a first laser having laser irradiation parameters to melt at least a part of the region; and controlling the irradiation process by adapting the irradiation parameters; characterized in that the method further comprises determining the depth of the melted region part. Further, the present invention is related to an apparatus for irradiating semiconductor material comprising: a first laser for irradiating a region of a semiconductor layer surface to melt at least a part of the region, said laser having laser irradiation parameters; and a controller for controlling the irradiation process by adapting the laser irradiation parameters; characterized in that the apparatus further comprises means for determining the depth of the melted region part.
摘要翻译：本发明涉及一种用于照射半导体材料的方法，包括：用具有激光照射参数的第一激光照射半导体材料层表面的区域以熔化该区域的至少一部分; 并通过适应照射参数来控制照射过程; 其特征在于，所述方法还包括确定熔融区域部分的深度。此外，本发明涉及一种用于照射半导体材料的设备，包括：第一激光器，用于照射半导体层表面的区域以熔化该区域的至少一部分，所述激光器具有激光照射参数; 以及控制器，用于通过适应激光照射参数来控制照射过程; 其特征在于，该装置还包括用于确定熔化区域部分的深度的装置。

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