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    • 1. 发明申请
    • THIN LAYER IMAGING PROCESS FOR MICROLITHOGRAPHY USING RADIATION AT STRONGLY ATTENUATED WAVELENGTHS
    • 使用强烈衰减波长的辐射微结构的薄层成像方法
    • WO0163359A3
    • 2002-01-10
    • PCT/US0027594
    • 2000-10-05
    • EUV LLCWHEELER DAVID R
    • WHEELER DAVID R
    • G03F7/004G03F7/039G03F7/09G03F7/16
    • G03F7/09G03F7/0045G03F7/039G03F7/168
    • A method for patterning of resist surfaces which is particularly advantageous for systems having low photon flux and highly energetic, strongly attenuated radiation. A thin imaging layer is created with uniform silicon distribution in a bilayer format. An image is formed by exposing selected regions of the silylated imaging layer to radiation. The radiation incident upon the silyliated resist material results in acid generation which either catalyzes cleavage of Si-O bonds to produce moieties that are volatile enough to be driven off in a post exposure bake step or produces a resist material where the exposed portions of the imaging layer are soluble in a basic solution, thereby desilylating the exposed areas of the imaging layer. The process is self limiting due to the limited quantity of silyl groups within each region of the pattern. Following the post exposure bake step, an etching step, generally an oxygen plasma etch, removes the resist material from the de-silylated areas of the imaging layer.
    • 用于抗蚀剂表面图案化的方法,其特别有利于具有低光子通量和高能量,强衰减辐射的系统。 以双层格式制造具有均匀硅分布的薄成像层。 通过将甲硅烷基化成像层的选定区域暴露于辐射而形成图像。 入射到甲硅烷基抗蚀剂材料上的辐射导致酸产生,其催化Si-O键的裂解以产生足够挥发的部分,以在后曝光烘烤步骤中被驱除,或产生抗蚀剂材料,其中成像的暴露部分 层可溶于碱性溶液,从而对成像层的曝光区域进行去溶剂化。 由于图案的每个区域内甲硅烷基的量有限,因此该过程是自限制的。 在曝光后烘烤步骤之后,蚀刻步骤(通常为氧等离子体蚀刻)从成像层的去甲硅烷基化区域去除抗蚀剂材料。