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1. 发明申请

WO2008057616A8 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A8
公开(公告)日：2010-03-18
申请号：PCT/US2007063830
申请日：2007-03-12
申请人： ADVANCED TECH MATERIALS , HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
发明人： HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
IPC分类号： C23C16/00 , H01L21/20 , H01L31/20
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

2. 发明申请

WO2007047822A3 NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY 审中-公开
标题翻译：具有渗透孔隙度的纳米低K膜
公开(公告)号：WO2007047822A3
公开(公告)日：2009-05-07
申请号：PCT/US2006040848
申请日：2006-10-18
申请人： ADVANCED TECH MATERIALS , VESYCK DANIEL J , BILODEAU STEVEN M , XU CHONGYING , CHEN PHILIP S H , ROEDER JEFFREY F
发明人： VESYCK DANIEL J , BILODEAU STEVEN M , XU CHONGYING , CHEN PHILIP S H , ROEDER JEFFREY F
IPC分类号： C08J9/26 , C08J9/28 , H01L21/00 , H01L21/02
CPC分类号： C23C16/56 , B82Y30/00 , C23C16/30
摘要： A reinforced porous dielectric material having porosity including pores at least partially closed by an infilled material. The material in one application includes a siloxane such as octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTS), or CH3(EtO2)SiCHCH2O (DEOMORS), which is infiltrated with a hydrocarbon, such as propylene, ethylene, dimethylsilane or divinyldimethylsilane, and thereafter subjected to conditions for immobilizing the infiltrated material, for reinforcement and enhanced strength and mechanical integrity of the dielectric material. By appropriate choice of infiltrating conditions, the porosity of the dielectric material can be partially filled at the neck regions of the pores, to form closed pore structure having voids that reduce the dielectric constant of the overall material. In a specific application, the infilled material is a ring compound that is self- cross-linked and/or reactively bonded to the wall surface of the dielectric material porosity.
摘要翻译：一种具有孔隙率的增强的多孔电介质材料，包括至少部分由填充材料封闭的孔。一种应用中的材料包括诸如丙烯，乙烯，二甲基硅烷或二乙烯基二甲基硅烷等烃类渗透的诸如八甲基环四硅氧烷（OMCTS），四甲基环四硅氧烷（TMCTS）或CH 3（EtO 2）SiCHCH 2 O（DEOMORS）的硅氧烷，用于固定渗透材料的条件，用于增强和提高电介质材料的强度和机械完整性。通过适当选择渗透条件，电介质材料的孔隙率可以部分地填充在孔的颈部区域，以形成具有减小整个材料的介电常数的空隙的闭孔结构。在具体应用中，填充材料是与电介质材料孔隙率的壁表面自交联和/或反应性结合的环化合物。

3. 发明申请

WO2008057616A2 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/063830
申请日：2007-05-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , HUNKS, William , CHEN, Tianniu , XU, Chongying , ROEDER, Jeffrey, F. , BAUM, Thomas, H. , PETRUSKA, Melissa, A. , STENDER, Matthias , CHEN, Philip, S., H. , STAUF, Gregory, T. , HENDRIX, Bryan, C.
发明人： HUNKS, William , CHEN, Tianniu , XU, Chongying , ROEDER, Jeffrey, F. , BAUM, Thomas, H. , PETRUSKA, Melissa, A. , STENDER, Matthias , CHEN, Philip, S., H. , STAUF, Gregory, T. , HENDRIX, Bryan, C.
IPC分类号： C07F7/30
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

4. 发明申请

WO2005081931A3 NICKEL-COATED FREE-STANDING SILICON CARBIDE STRUCTURE FOR SENSING FLUORO OR HALOGEN SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS, AND PROCESSES OF MAKING AND USING SAME 审中-公开
标题翻译：用于感应半导体加工系统中的荧光或卤素物质的镍涂层的自由置换的硅碳结构，以及制造和使用它们的方法
公开(公告)号：WO2005081931A3
公开(公告)日：2006-02-02
申请号：PCT/US2005005607
申请日：2005-02-23
申请人： ADVANCED TECH MATERIALS , DIMEO FRANK JR , CHEN PHILIP S H , CHEN ING-SHIN , NEUNER JEFFREY W , WELCH JAMES
发明人： DIMEO FRANK JR , CHEN PHILIP S H , CHEN ING-SHIN , NEUNER JEFFREY W , WELCH JAMES
IPC分类号： G01N33/00 , G01N9/00
CPC分类号： G01N27/16 , G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981
摘要： A (MEMS)-based gas sensor assembly (35) for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide (4) support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds (16) that are subsequently removable for forming structure layers.
摘要翻译：一种用于检测含有它的气体中的含氟物质的（MEMS）的气体传感器组件（35），例如用HF，NF3等进行蚀刻清洁的半导体处理工具的流出物。这种气体传感器组件优选实施例包括具有涂覆在其上的气体感测材料层，优选镍或镍合金层的独立式碳化硅（4）支撑结构。这种气体传感器组件优选地通过使用牺牲模具（16）的微型模制技术来制造，该模具随后可拆卸以形成结构层。

5. 发明申请

WO2009152108A8 GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY 审中-公开
标题翻译： GeSbTe材料包括超流层，以及Ge的使用，以防止从SbXTeY和GeXTEY相互作用的高分辨率内容和薄膜色差
公开(公告)号：WO2009152108A8
公开(公告)日：2010-07-29
申请号：PCT/US2009046655
申请日：2009-06-08
申请人： ADVANCED TECH MATERIALS , ZHENG JUN-FEI , ROEDER JEFFREY F , CHEN PHILIP S H
发明人： ZHENG JUN-FEI , ROEDER JEFFREY F , CHEN PHILIP S H
IPC分类号： H01L27/115 , H01L21/20 , H01L21/8247
CPC分类号： H01L45/1616 , C23C16/305 , H01L45/06 , H01L45/144
摘要： A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.
摘要翻译：一种含有锗，锑和碲的多层膜堆，其可被退火以形成均匀和平滑特征的GST产品材料，其中至少一个含锑层通过中间锗层与含碲层分离，并且多层膜堆叠包括至少两个中间的锗层。可以通过诸如化学气相沉积或原子层沉积的气相沉积技术形成多层膜堆叠。可退火的多层膜堆叠可以形成在高纵横比通孔中，以形成相对于GST产品材料的化学计量和形态特征的优异特征的相变存储器件。

6. 发明申请

WO2009152108A3 THE USE OF GE AS ISOLATION LAYER ON SBXTEY OR GEXTEY ALLOY TO PREVENT INTERACTION OF TE FROM SBXTEY AND GEXTEY RESULTING IN HIGH TE CONTENT AND FILM CRYSTALLINITY 审中-公开
公开(公告)号：WO2009152108A3
公开(公告)日：2009-12-17
申请号：PCT/US2009/046655
申请日：2009-06-08
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ZHENG, Jun-Fei , ROEDER, Jeffrey, F. , CHEN, Philip, S., H.
发明人： ZHENG, Jun-Fei , ROEDER, Jeffrey, F. , CHEN, Philip, S., H.
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/20
摘要： A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.

7. 发明申请

WO2008057616A3 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A3
公开(公告)日：2009-04-09
申请号：PCT/US2007063830
申请日：2007-03-12
申请人： ADVANCED TECH MATERIALS , HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
发明人： HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
IPC分类号： C23C16/00 , H01L21/20 , H01L31/20
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

8. 发明申请

WO2007041454A2 SYSTEMS AND METHODS FOR DETERMINATION OF ENDPOINT OF CHAMBER CLEANING PROCESSES 审中-公开
标题翻译：用于确定室内清洁工艺端点的系统和方法
公开(公告)号：WO2007041454A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/038358
申请日：2006-10-03
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CHEN, Ing-Shin , NEUNER, Jeffrey, W. , ROEDER, Jeffrey, F. , BILODEAU, Steven, M. , HENDRIX, Bryan, C. , CHEN, Philip, S., H.
发明人： CHEN, Ing-Shin , NEUNER, Jeffrey, W. , ROEDER, Jeffrey, F. , BILODEAU, Steven, M. , HENDRIX, Bryan, C. , CHEN, Philip, S., H.
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , C23C16/4405 , C23C16/52 , H01J37/32862 , H01J37/32935 , H01J37/32963 , H01L21/67069
摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.
摘要翻译：用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。清洁过程包括使清洁流体与待清洁的结构接触并产生具有对应于结构清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定清洁何时完成。还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

9. 发明申请

WO2005072161A2 APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：在半导体处理系统中用于检测目标气体种类的装置和方法
公开(公告)号：WO2005072161A2
公开(公告)日：2005-08-11
申请号：PCT/US2005/001409
申请日：2005-01-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CHEN, Philip, S., H. , CHEN, Ing-Shin , DIMEO, Frank, Jr. , NEUNER, Jeffrey, W. , WELCH, James , ROEDER, Jeffrey, F.
发明人： CHEN, Philip, S., H. , CHEN, Ing-Shin , DIMEO, Frank, Jr. , NEUNER, Jeffrey, W. , WELCH, James , ROEDER, Jeffrey, F.
IPC分类号： G01N9/00 , G01N27/12 , G01N33/00
CPC分类号： G01N27/16
摘要： A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF 3 , etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.
摘要翻译：用于检测目标气体物质的气体检测器和方法，所述目标气体物质例如在含有气体的气体中的含氟物质，例如用HF进行蚀刻清洁的半导体加工工具的流出物，气体检测器在一个方面采用对含氟物质敏感的含镍丝，当升高温度感测时，所述含镍丝可以用作感测组件和热源需要。气体检测器在一个方面采用可以垂直安装在支撑结构上的细长的气体传感器元件。这种细长的气体传感器元件在支撑结构上的垂直安装显着提高了信号强度，减少了响应时间，使气体检测器的占用面积最小，并且提供了适应这种气体传感器元件的热膨胀/收缩的结构灵活性。 >

10. 发明申请

WO2002045128A3 ZIRCONIUM-DOPED BST MATERIALS AND MOCVD PROCESS FOR FORMING SAME 审中-公开
公开(公告)号：WO2002045128A3
公开(公告)日：2002-06-06
申请号：PCT/US2001/043984
申请日：2001-11-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , STAUF, Gregory, T. , CHEN, Philip, S. , ROEDER, Jeffrey, F.
发明人： STAUF, Gregory, T. , CHEN, Philip, S. , ROEDER, Jeffrey, F.
IPC分类号： H01B1/08
摘要： A Zr-doped (Ba,Sr)TiO 3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10 -3 A/cm 2 under applied voltage of about ±3V or above and at temperature of about 100°C or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO 3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd) 2 -polyamine, Sr(thd) 2 -polyamine, Zr(thd) 4 , and Ti(OiPr) 2 (thd) 2 at a deposition temperature inthe range from about 560°C to 700°C.

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