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1. 发明申请

WO2007127865A3 CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统的清洁
公开(公告)号：WO2007127865A3
公开(公告)日：2008-12-11
申请号：PCT/US2007067542
申请日：2007-04-26
申请人： ADVANCED TECH MATERIALS , DIMEO FRANK JR , DIETZ JAMES , OLANDER W KARL , KAIM ROBERT , BISHOP STEVEN E , NEUNER JEFFREY W , ARNO JOSE I , MARGANSKI PAUL J , SWEENEY JOSEPH D , ELDRIDGE DAVID , YEDAVE SHARAD , BYL OLEG , STAUF GREGORY T
发明人： DIMEO FRANK JR , DIETZ JAMES , OLANDER W KARL , KAIM ROBERT , BISHOP STEVEN E , NEUNER JEFFREY W , ARNO JOSE I , MARGANSKI PAUL J , SWEENEY JOSEPH D , ELDRIDGE DAVID , YEDAVE SHARAD , BYL OLEG , STAUF GREGORY T
IPC分类号： C25F1/00 , C25F3/12
CPC分类号： C23C14/564 , C23C16/4405 , H01J37/32412 , H01J37/32862
摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.
摘要翻译：一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F，，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

2. 发明申请

WO2007133837A3 LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS 审中-公开
标题翻译：相变记忆材料的低温沉积
公开(公告)号：WO2007133837A3
公开(公告)日：2008-03-13
申请号：PCT/US2007063832
申请日：2007-03-12
申请人： ADVANCED TECH MATERIALS , ROEDER JEFFREY F , BAUM THOMAS H , HENDRIX BRYAN C , STAUF GREGORY T , XU CHONGYING , HUNKS WILLIAM , CHEN TIANNIU , STENDER MATTHIAS
发明人： ROEDER JEFFREY F , BAUM THOMAS H , HENDRIX BRYAN C , STAUF GREGORY T , XU CHONGYING , HUNKS WILLIAM , CHEN TIANNIU , STENDER MATTHIAS
IPC分类号： G11C11/00
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译：一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触，通过化学气相沉积或原子层沉积进行接触。描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

3. 发明申请

WO0245128A2 ZIRCONIUM-DOPED BST MATERIALS AND MOCVD PROCESS FOR FORMING SAME 审中-公开
标题翻译： ZIRCONIUM-DOPED BST材料和MOCVD工艺形成
公开(公告)号：WO0245128A2
公开(公告)日：2002-06-06
申请号：PCT/US0143984
申请日：2001-11-14
申请人： ADVANCED TECH MATERIALS , STAUF GREGORY T , CHEN PHILIP S , ROEDER JEFFREY F
发明人： STAUF GREGORY T , CHEN PHILIP S , ROEDER JEFFREY F
IPC分类号： C23C16/40 , H01L21/314 , H01L21/316 , H01L
CPC分类号： C23C16/409 , H01L21/31691
摘要： A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10 A/cm under applied voltage of about +/-3V or above and at temperature of about 100 DEG C or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature inthe range from about 560 DEG C to 700 DEG C.
摘要翻译： Zr掺杂（Ba，Sr）TiO3钙钛矿晶体材料介电薄膜。这种介电薄膜的特征在于以下特征中的至少一个：（a）击穿强度至少为1.3MV / cm; （b）在大约+/- 3V或以上的施加电压和约100℃或更高的温度下的泄漏电流不大于1×10 -3 A / cm 2; 和（c）至少15J / cc的储能密度。电介质薄膜包含Zr掺杂（Ba，Sr）TiO 3钙钛矿晶体材料的总重量的0.5〜50％的锆掺杂剂，优选2-15％，更优选4％〜14％，最多优选5％至12％。通过使用金属前体Ba（thd）2-多胺，Sr（thd）2 - 多胺，Zr（thd）4和Ti（OiPr）2（thd）2的MOCVD法沉积这种电介质薄膜，沉积温度在约560℃至700℃的范围内。

4. 发明申请

WO2008057616A8 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A8
公开(公告)日：2010-03-18
申请号：PCT/US2007063830
申请日：2007-03-12
申请人： ADVANCED TECH MATERIALS , HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
发明人： HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
IPC分类号： C23C16/00 , H01L21/20 , H01L31/20
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

5. 发明申请

WO2008128141A2 ZIRCONIUM, HAFNUIM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD 审中-公开
标题翻译： ZIRCONIUM，HAFNUIM，钛和钛前驱体用于ALD / CVD
公开(公告)号：WO2008128141A2
公开(公告)日：2008-10-23
申请号：PCT/US2008/060162
申请日：2008-04-13
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , XU, Chongying , ROEDER, Jeffrey, F. , CHEN, Tianniu , HENDRIX, Bryan, C. , BENAC, Brian , CAMERON, Thomas, M. , PETERS, David, W. , STAUF, Gregory, T. , MAYLOTT, Leah
发明人： XU, Chongying , ROEDER, Jeffrey, F. , CHEN, Tianniu , HENDRIX, Bryan, C. , BENAC, Brian , CAMERON, Thomas, M. , PETERS, David, W. , STAUF, Gregory, T. , MAYLOTT, Leah
IPC分类号： C23C16/30 , C23C16/00 , C07F7/00
CPC分类号： C07F7/006 , C07C211/65 , C07F17/00 , C23C16/18 , C23C16/405
摘要： Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.
摘要翻译：分别用于相应的含锆，含铪，含钛和含硅膜的原子层沉积（ALD）和化学气相沉积（CVD）的锆，铪，钛和硅前体。所公开的前体实现了以最小碳掺入为特征的高度保形的沉积膜。

6. 发明申请

WO2008057616A2 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/063830
申请日：2007-05-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , HUNKS, William , CHEN, Tianniu , XU, Chongying , ROEDER, Jeffrey, F. , BAUM, Thomas, H. , PETRUSKA, Melissa, A. , STENDER, Matthias , CHEN, Philip, S., H. , STAUF, Gregory, T. , HENDRIX, Bryan, C.
发明人： HUNKS, William , CHEN, Tianniu , XU, Chongying , ROEDER, Jeffrey, F. , BAUM, Thomas, H. , PETRUSKA, Melissa, A. , STENDER, Matthias , CHEN, Philip, S., H. , STAUF, Gregory, T. , HENDRIX, Bryan, C.
IPC分类号： C07F7/30
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

7. 发明申请

WO2007127865A2 CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统的清洁
公开(公告)号：WO2007127865A2
公开(公告)日：2007-11-08
申请号：PCT/US2007/067542
申请日：2007-04-26
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , DIMEO, Frank Jr. , DIETZ, James , OLANDER, W. Karl , KAIM, Robert , BISHOP, Steven, E. , NEUNER, Jeffrey W. , ARNO, Jose I. , MARGANSKI, Paul J. , SWEENEY, Joseph D. , ELDRIDGE, David , YEDAVE, Sharad , BYL, Oleg , STAUF, Gregory, T.
发明人： DIMEO, Frank Jr. , DIETZ, James , OLANDER, W. Karl , KAIM, Robert , BISHOP, Steven, E. , NEUNER, Jeffrey W. , ARNO, Jose I. , MARGANSKI, Paul J. , SWEENEY, Joseph D. , ELDRIDGE, David , YEDAVE, Sharad , BYL, Oleg , STAUF, Gregory, T.
IPC分类号： C25B7/00
CPC分类号： C23C14/564 , C23C16/4405 , H01J37/32412 , H01J37/32862
摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF 2 , XeF 4 , XeF 6 , NF 3 , IF 5 , IF 7 , SF 6 , C 2 F 6 , F 2 , CF 4 , KrF 2 , Cl 2 , HCl, ClF 3 , ClO 2 , N 2 F 4 , N 2 F 2 , N 3 F, NFH 2 , NH 2 F, HOBr, Br 2 , C 3 F 8 , C 4 F 8 , C 5 F 8 , CHF 3 , CH 2 F 2 , CH 3 F, COF 2 , HF, C 2 HF 5 , C 2 H 2 F 4 , C 2 H 3 F 3 , C 2 H 4 F 2 , C 2 H 5 F, C 3 F 6 , and organochlorides such as COCl 2 , CCl 4 , CHCl 3 , CH 2 Cl 2 and CH 3 Cl.
摘要翻译：一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。特别优选的气相反应性材料包括气态化合物，例如XeF 2，XeF 4，XeF 6，NF 3，如上所述，如上所述，如上所述，如上所述，如上所述，如上所述，，F 2，CF 4，CHF 2，Cl 2，HCl，ClF 3， 2 SUB 2，N 2 F 2，N 2，F 2，N 2，N 2， >，N 3 F，NFH 2，NH 2 F，HOBr，Br 2，C 1， C 3 C 8，C 4，C 5，C 5，F 8， CH 3，CH 2，CH 2，CH 2，CH 3，F，COF 2， 2，HF 2，C 2 HF 5，C 2 H 2 F 4，/ SO 3 >，C 2 H 3 H 3 F 3，C 2 H 4， C 2，C 2 H 5，F 3 C 6，和有机氯化物如作为COCl 2，CCl 4，CHCl 3，CH 2，Cl 2，和 CH _{3 氯。}

8. 发明申请

WO2009059237A2 NOVEL BISMUTH PRECURSORS FOR CVD/ALD OF THIN FILMS 审中-公开
标题翻译：用于CVD / ALD薄膜的新型铋前驱体
公开(公告)号：WO2009059237A2
公开(公告)日：2009-05-07
申请号：PCT/US2008/082134
申请日：2008-10-31
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CHEN, Tianniu , XU, Chongying , HENDRIX, Bryan, C. , HUNKS, William , CAMERON, Thomas, M. , STENDER, Matthias , STAUF, Gregory, T. , ROEDER, Jeffrey, F.
发明人： CHEN, Tianniu , XU, Chongying , HENDRIX, Bryan, C. , HUNKS, William , CAMERON, Thomas, M. , STENDER, Matthias , STAUF, Gregory, T. , ROEDER, Jeffrey, F.
IPC分类号： C07F9/94
CPC分类号： C07F9/94
摘要： Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature ( 2 Te 3 , Bi 4 Ti 3 O 12 , SrBi 2 Ta 2 O 9 , Bi- Ta-O, BiP and thermoelectric bismuth-containing films.
摘要翻译：通过低温（<300℃）汽相沉积法如CVD和ALD，包括铋酸铵，铋酸铋，铋酸铋，铋等具有用于形成高度保形的含铋膜的铋前体氨基甲酸酯和硫代氨基甲酸铋，β-二酮酸铋，二酮亚铋酸铋，二巯基亚铋酸铋，铋环戊二烯基，铋烷基化物，铋醇盐和具有侧配体的铋甲硅烷基，铋甲硅烷基酰胺，铋螯合酰胺和二三羟基亚氨基二膦酸铋。还描述了制造这种前体的方法，以及适用于制造微电子器件产品的这种前体的封装形式。这些铋前体可用于形成含铋膜，例如GBT，Bi 2 Te 3，Bi 4 Ti _{3 _{3 _{SrBi 2 Ta 2 O 9 O 9，Bi-Ta-O， BiP和热电含铋薄膜。}}}

9. 发明申请

WO2008057616A3 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A3
公开(公告)日：2009-04-09
申请号：PCT/US2007063830
申请日：2007-03-12
申请人： ADVANCED TECH MATERIALS , HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
发明人： HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
IPC分类号： C23C16/00 , H01L21/20 , H01L31/20
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

10. 发明申请

WO2007133837A2 LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS 审中-公开
标题翻译：相变记忆材料的低温沉积
公开(公告)号：WO2007133837A2
公开(公告)日：2007-11-22
申请号：PCT/US2007/063832
申请日：2007-03-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ROEDER, Jeffrey, F. , BAUM, Thomas, H. , HENDRIX, Bryan, C. , STAUF, Gregory, T. , XU, Chongying , HUNKS, William , CHEN, Tianniu , STENDER, Matthias
发明人： ROEDER, Jeffrey, F. , BAUM, Thomas, H. , HENDRIX, Bryan, C. , STAUF, Gregory, T. , XU, Chongying , HUNKS, William , CHEN, Tianniu , STENDER, Matthias
IPC分类号： B01D46/10
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译：一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触，通过化学气相沉积或原子层沉积进行接触。描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

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