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    • 1. 发明申请
    • OPTICAL WAVEGUIDE STRUCTURE
    • 光学波导结构
    • WO2012135483A3
    • 2012-12-27
    • PCT/US2012031187
    • 2012-03-29
    • INTEL CORPKOBRINSKY MAURO JBLOCK BRUCE ACHANG PETER L
    • KOBRINSKY MAURO JBLOCK BRUCE ACHANG PETER L
    • G02B6/122
    • G02F1/035G02F1/025G02F1/065G02F1/225G02F2201/18
    • Embodiments of the invention describe a multi-segment optical waveguide that enables an optical modulator to be low-power and athermal by decreasing the device length needed for a given waveguide length. Embodiments of the invention describe an optical waveguide that is folded onto itself, and thus includes at least two sections. Thus, embodiments of the invention may decrease the device size of a modulator by at least around a factor of two if the device is folded twofold (device size may be further reduced if the modulator is folded threefold, fourfold, five-fold, etc.). Embodiments of the invention further enable the electrode length required to create the desired electro-optic effect for the multi- segment optical waveguide to be reduced. In embodiments of the invention, certain electrodes may be "shared" amongst the different segments of the waveguide, thereby reducing the power requirement and capacitance of a device having a waveguide of a given length.
    • 本发明的实施例描述了一种多段光波导,其通过减小给定波导长度所需的设备长度而使得光调制器能够是低功率和无热的。 本发明的实施例描述了自身折叠的光波导,并且因此包括至少两个部分。 因此,如果设备折叠两倍(如果调制器折叠三倍,四倍,五倍等,则设备尺寸可以进一步减小),本发明的实施例可以将调制器的设备尺寸减小至少约两倍 )。 本发明的实施例还使得能够降低为多段光波导产生期望的电光效应所需的电极长度。 在本发明的实施例中,某些电极可以在波导的不同区段之间“共享”,由此减小具有给定长度的波导的装置的功率需求和电容。
    • 2. 发明申请
    • OPTICAL WAVEGUIDE STRUCTURE
    • 光波导结构
    • WO2012135483A2
    • 2012-10-04
    • PCT/US2012/031187
    • 2012-03-29
    • INTEL CORPORATIONKOBRINSKY, Mauro J.BLOCK, Bruce A.CHANG, Peter L.
    • KOBRINSKY, Mauro J.BLOCK, Bruce A.CHANG, Peter L.
    • G02B6/122
    • G02F1/035G02F1/025G02F1/065G02F1/225G02F2201/18
    • Embodiments of the invention describe a multi-segment optical waveguide that enables an optical modulator to be low-power and athermal by decreasing the device length needed for a given waveguide length. Embodiments of the invention describe an optical waveguide that is folded onto itself, and thus includes at least two sections. Thus, embodiments of the invention may decrease the device size of a modulator by at least around a factor of two if the device is folded twofold (device size may be further reduced if the modulator is folded threefold, fourfold, five-fold, etc.). Embodiments of the invention further enable the electrode length required to create the desired electro-optic effect for the multi- segment optical waveguide to be reduced. In embodiments of the invention, certain electrodes may be "shared" amongst the different segments of the waveguide, thereby reducing the power requirement and capacitance of a device having a waveguide of a given length.
    • 本发明的实施例描述了一种多段光波导,其通过减小给定波导长度所需的器件长度,使光调制器能够实现低功率和无热性。 本发明的实施例描述了折叠到其自身上的光波导,因此包括至少两个部分。 因此,如果器件被折叠两倍,则本发明的实施例可以将调制器的器件尺寸减小至少约二分之一(如果调制器被折叠三倍,四倍,五倍等等,则器件尺寸可以进一步降低) )。 本发明的实施例还使得能够减少为多段光波导产生期望的电光效应所需的电极长度。 在本发明的实施例中,某些电极可以在波导的不同部分之间“共享”,由此降低具有给定长度的波导的器件的功率需求和电容。
    • 6. 发明申请
    • MEMORY WITH DOUBLE-GATE FINFETS AND METHOD OF FABRICATION
    • 具有双栅极熔体的存储器和制造方法
    • WO2005098928A1
    • 2005-10-20
    • PCT/US2005/010164
    • 2005-03-25
    • INTEL CORPORATIONCHANG, Peter, L., D.
    • CHANG, Peter, L., D.
    • H01L21/336
    • H01L29/7841H01L27/0207
    • A DRAM fabricated on an SOI substrate employing single body devices as memory cells without relying on a field through the insulative layer of the SOI is described. Floating body devices are defined by orthogonally disposed lines with both a front gate and back gate for each body being formed on the insulative layer. A silicon line (10) comprises a source (13) and a drain (11) that are separated by a body region (12) of opposite conductivity type. A conductive line runs in perpendicular direction to the silicon line (10) and comprises a back gate (15) and a front gate (14) that are separated from the body region (12) by respective spacers (16, 17). The DRAM thus comprises double-gate FinFETs.
    • 描述了在SOI衬底上制造的DRAM,其采用单体器件作为存储器单元,而不依赖于通过SOI的绝缘层的场。 浮体装置由正面设置的线限定,前门和后门两者均形成在绝缘层上。 硅线(10)包括由相反导电类型的体区(12)分开的源极(13)和漏极(11)。 导线在与硅线(10)垂直的方向上延伸,并且包括通过相应的间隔件(16,17)与主体区域(12)分离的后门(15)和前门(14)。 因此,DRAM包括双栅极FinFET。
    • 8. 发明申请
    • ULTRASOUND IMAGING SYSTEM
    • 超声成像系统
    • WO2003027662A2
    • 2003-04-03
    • PCT/US2002/030911
    • 2002-09-27
    • TERATECH CORPORATIONHE, XingbaiCHANG, Peter, P.KISCHELL, Eric, R.CHIANG, Alice, M.
    • HE, XingbaiCHANG, Peter, P.KISCHELL, Eric, R.CHIANG, Alice, M.
    • G01N29/00
    • A61B8/4427A61B8/065A61B8/463A61B8/486A61B8/488A61B8/5223A61B8/54A61B8/56G01S7/003G01S7/52044G01S7/52063G01S7/52071G01S7/5208G01S7/52082G01S7/52084G01S15/584G01S15/8979G01S15/8981
    • The present invention is directed to an ultrasound imaging system and method for Doppler processing of data. The ultrasonic imaging system efficiently addresses the data computational and processing needs of Doppler processing. Software executable sequences in accordance with a preferred embodiment the present invention determines the phase shift and the auto-correlation phase of filtered image data. In a preferred embodiment, the system of ultrasonic imaging also includes a sequence of instructions for Doppler processing that provides the functions for demodulation, Gauss Match filtering, auto-correlation calculation, phase shift calculation, frame averaging, and scan conversion implemented with Single Instruction Multiple Data (SIMD) or Multiple Instruction Multiple Data (MIMD) instructions. In a preferred embodiment, the ultrasound imaging system of the present invention includes a processing module; and memory operable coupled to the processing module, wherein the memory stores operational instructions that cause the processing module to map serial data to vector representation, calculate an auto- correlation function of the data, calculate a phase shift of the auto-correlation function to generate a monotonic function covering all values of the phase shift corresponding to a range of Doppler velocities and display the resultant images, for example, as color images.
    • 本发明涉及用于数据的多普勒处理的超声成像系统和方法。 超声成像系统有效地解决了多普勒处理的数据计算和处理需求。 根据本发明的优选实施例的软件可执行序列确定滤波图像数据的相移和自相关相位。 在优选实施例中,超声成像系统还包括用于多普勒处理的指令序列,其提供用于解调,高斯匹配滤波,自相关计算,相移计算,帧平均和使用单指令多重实现的扫描转换的功能 数据(SIMD)或多指令多数据(MIMD)指令。 在优选实施例中,本发明的超声成像系统包括处理模块; 以及可操作地耦合到所述处理模块的存储器,其中所述存储器存储使所述处理模块将串行数据映射到向量表示的操作指令,计算所述数据的自相关函数,计算所述自相关函数的相移以产生 一个单调函数,覆盖与多普勒速度范围相对应的所有相移值,并显示所得到的图像,例如作为彩色图像。
    • 10. 发明申请
    • MICROLED DISPLAY & ASSEMBLY
    • 微型显示器和组件
    • WO2016060676A1
    • 2016-04-21
    • PCT/US2014/061052
    • 2014-10-17
    • INTEL CORPORATIONCHANG, Peter L.
    • CHANG, Peter L.
    • H01L27/32H01L51/50
    • H01L27/156H01L33/385
    • Crystalline (micro)LED display assemblies, methods of fabricating such display assemblies, crystalline LED source substrates from which the (micro)LEDs may be transferred to the display assembly, and methods of fabricating such source substrates. LED elements may be prepared for transfer by pick-n-place or other means to a bonding substrate. Anchor and release structures enable LED elements to be affixed and electrically coupled to a bonding substrate with conductive polymer. LED elements may be prepared for transfer to a bonding substrate with self-aligned LED electrode metallization structures enabling the elements to be affixed to a bonding substrate with an adhesive and electrically coupled with a self-aligned local interconnect metallization. After affixing the LED elements, material may be built-up around the LED elements and the display assembly separated from the bonding substrate.
    • 晶体(微)LED显示组件,制造这样的显示组件的方法,(微)LED可从该LED源基板传送到显示组件的晶体LED源基板,以及制造这样的源极基板的方法。 可以制备LED元件用于通过拾取位置或其它方式转移到接合衬底。 锚固和释放结构使得LED元件能够被固定并且与导电聚合物电连接到接合基底。 LED元件可以被准备用于转移到具有自对准LED电极金属化结构的接合衬底,使得能够使用粘合剂将元件固定到接合衬底并与自对准局部互连金属化电连接。 在固定LED元件之后,材料可以围绕LED元件和显示器组件组装在与接合衬底分离的位置。