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1. 发明申请

WO2009139912A3 IN-LINE EFFLUENT ANALYSIS METHOD AND APPARATUS FOR CMP PROCESS CONTROL 审中-公开
标题翻译：用于CMP过程控制的在线分析方法和装置
公开(公告)号：WO2009139912A3
公开(公告)日：2010-03-04
申请号：PCT/US2009003044
申请日：2009-05-15
申请人： CONFLUENSE LLC , BENNER STEPHEN J , PETERS DARRYL W
发明人： BENNER STEPHEN J , PETERS DARRYL W
IPC分类号： H01L21/304
CPC分类号： G05B11/06
摘要： An apparatus and method for collecting and analyzing the effluent stream created by a chemical mechanical planarization (CMP) process performs a continuous measurement of at least one effluent characteristic and integrates the results over time to create a volumetric analysis of the planarization process. The volumetric analysis can be used as feedback/feedforward signals to control the planarization process itself (e.g., endpoint detection based upon an known initial thickness of film material), create alarm signals for out-of-range measurements, and/or waste stream indicators useful in treating the effluent prior to discharge (e.g., determining a pH correction).
摘要翻译：用于收集和分析通过化学机械平面化（CMP）工艺产生的流出物流的装置和方法执行至少一种流出物特性的连续测量，并且随着时间的推移整合结果以产生平坦化过程的体积分析。体积分析可用作反馈/前馈信号以控制平面化过程本身（例如，基于已知的薄膜材料初始厚度的端点检测），产生用于超出范围测量的报警信号和/或废物流指示器可用于在排放之前处理流出物（例如，确定pH校正）。

2. 发明申请

WO2007008822A2 ENHANCED END EFFECTOR ARM ARRANGEMENT FOR CMP PAD CONDITIONING 审中-公开
标题翻译：用于CMP PAD调节的增强型端部效应器臂布置
公开(公告)号：WO2007008822A2
公开(公告)日：2007-01-18
申请号：PCT/US2006/026771
申请日：2006-07-10
申请人： TBW INDUSTRIES INC. , BENNER, Stephen, J.
发明人： BENNER, Stephen, J.
IPC分类号： B24B51/00 , B24B1/00 , B24B29/00
CPC分类号： B24B53/017
摘要： A CMP conditioning apparatus enhanced end effector arm for improving the reliability of the apparatus and the quality of the conditioning and polishing operations includes a conditioner head with features that provide for simplified alignment/attachment of a conditioning disk to the arm, while also providing a "quick release" mechanism for maintenance operations. The enhanced arm also includes an improved actuator that provides for a static friction ("stiction")-free movement of the arm and better control of the downforce applied by the conditioning disk to the polishing pad. A dual-drive pulley system is used within the enhanced end effector arm to minimize the tilting of the drive belts within the effector arm as the arm pivots to follow the contour of an "aging" polishing pad.
摘要翻译：一种CMP调节装置增强的末端执行器臂，用于提高装置的可靠性并且调节和抛光操作的质量包括具有提供调节盘与臂的对准/附接的特征的调节头，同时还提供“ 快速释放“维护操作机制。增强臂还包括改进的致动器，其提供静摩擦（“静摩擦”） - 臂的自由移动，并且更好地控制由调节盘施加到抛光垫的下压力。在增强的末端执行器臂中使用双驱动滑轮系统，以便当臂枢转以跟随“老化”抛光垫的轮廓时，使得效应器臂内的传动带的倾斜度最小化。

3. 发明申请

WO2005072332A3 CHEMICAL MECHANICAL PLANARIZATION PROCESS CONTROL UTILIZING IN-SITU CONDITIONING PROCESS 审中-公开
标题翻译：利用现场调节过程的化学机械平面化过程控制
公开(公告)号：WO2005072332A3
公开(公告)日：2006-03-16
申请号：PCT/US2005002314
申请日：2005-01-25
申请人： TBW IND INC , BENNER STEPHEN J , LI YUZHUO
发明人： BENNER STEPHEN J , LI YUZHUO
IPC分类号： B24B37/04 , B24B49/18 , B24B1/00 , B24B49/00 , B24B51/00
CPC分类号： B24B37/042 , B24B49/18
摘要： A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement (15) for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module (30) for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.
摘要翻译：用于在CMP系统中提供过程控制的系统和方法利用真空辅助装置（15）来调节晶片抛光垫，使得来自调节器的流出物（即，晶片碎片，抛光浆料，化学品或其它副产物）过程从废物流中转移，而是引入到分析模块（30）中用于进一步处理。分析模块用于确定流出物内的至少一个参数，并基于分析生成过程控制信号。然后将过程控制信号反馈到平坦化过程，以允许控制各种参数，例如抛光浆料组成，温度，流速等。过程控制信号还可用于控制调节过程和/或确定平坦化过程本身的终点。

4. 发明申请

WO2011088275A2 ACTIVE TRIBOLOGY MANAGEMENT OF CMP POLISHING MATERIAL 审中-公开
标题翻译： CMP抛光材料的活性物理学研究
公开(公告)号：WO2011088275A2
公开(公告)日：2011-07-21
申请号：PCT/US2011/021224
申请日：2011-01-14
申请人： CONFLUENSE LLC , BENNER, Stephen, J. , PETERS, Darryl, W.
发明人： BENNER, Stephen, J. , PETERS, Darryl, W.
CPC分类号： B24B57/02 , B24B37/042
摘要： An arrangement and method for managing the tribology associated with a chemical mechanical planarization (CMP) process continuously monitors and modifies the properties of a polishing slurry in order to assist in controlling the removal rate associated with the CMP process. The viscosity of slurry as it leaves the CMP system ("spent slurry") and the material removal rate associated with the semiconductor wafer are measured, and then the viscosity of the incoming slurry is adjusted if the measured material removal rate differs from a desired removal rate. If the removal rate is considered to be too fast, the viscosity of the fresh slurry being dispensed onto polishing pad is decreased; alternatively, if the removal rate is too slow, the viscosity is increased. As an alternative to modifying the viscosity of the slurry (or, perhaps in addition to modifying the viscosity), a lubricant may be added to the slurry to slow down the removal rate.
摘要翻译：用于管理与化学机械平面化（CMP）工艺相关联的摩擦学的布置和方法连续监测和修改抛光浆料的性质，以帮助控制与CMP工艺相关的去除速率。测量浆料离开CMP系统（“废浆”）时的粘度和与半导体晶片相关的材料去除速率，然后如果测量的材料去除速率与所需的去除率不同，则调整进料浆料的粘度率。如果去除速度被认为太快，则分配到抛光垫上的新鲜浆料的粘度降低; 或者，如果去除速度太慢，则粘度增加。作为改变浆料粘度的替代方法（或者可能除了改变粘度之外），可以向浆料中加入润滑剂以减缓去除速率。

5. 发明申请

WO2008042444A3 VACUUM LINE CLEAN-OUT SEPARATOR SYSTEM 审中-公开
标题翻译：真空管线清洁分离器系统
公开(公告)号：WO2008042444A3
公开(公告)日：2008-06-19
申请号：PCT/US2007021371
申请日：2007-10-05
申请人： TBW IND , BENNER STEPHEN J
发明人： BENNER STEPHEN J
IPC分类号： A47L5/38 , B01D50/00
CPC分类号： B01D45/16 , B04C5/185 , B04C11/00 , B04C2009/004
摘要： A vacuum clean-out system including a separator chamber and associated collection chamber for removing liquid material and debris from a vacuum output and providing a vacuum return line free of contaminants. A vacuum exhaust line is coupled to a cyclonic separator chamber that induces a circular rotation within the incoming vacuum stream, causing the liquid and debris to fall to the botto while the "clean" vacuum is drawn upwards into a return line. The collection chamber is at the same negative pressure as the separator chamber so that accumulating liquid and debris easily drains into the collection chamber. A sensor associated with the collection chamber determines when the collection chamber is full. At that point, the separator chamber is isolated from the collection chamber, the collection chamber is vented and the accumulated material is discharged and/or analyzed. The separator chamber can continue the vacuum clean-out process uninterrupted.
摘要翻译：真空清除系统，包括分离器室和相关联的收集室，用于从真空输出中除去液体材料和碎屑，并提供没有污染物的真空回流管线。真空排气管线连接到气旋分离器室，其在进入的真空流内引起圆形旋转，导致液体和碎屑落到机器人上，同时“清洁”真空向上拉到返回管线中。收集室处于与分离器室相同的负压，使得积聚的液体和碎屑容易地排入收集室。与收集室相关联的传感器确定收集室何时已满。此时，分离器室与收集室隔离，收集室被排出并且积聚的材料被排放和/或分析。分离器室可以不间断地继续真空清除过程。

6. 发明申请

WO2004112091A2 VACUUM-ASSISTED PAD CONDITIONING SYSTEM AND METHOD UTILIZING AN APERTURED CONDITIONING DISK 审中-公开
标题翻译：真空辅助垫片调节系统和使用一个钝化调节盘的方法
公开(公告)号：WO2004112091A2
公开(公告)日：2004-12-23
申请号：PCT/US2004/016353
申请日：2004-05-25
申请人： TBW INDUSTRIES, INC. , BENNER, Stephen, J.
IPC分类号： H01L
CPC分类号： B24B53/00 , B24B53/013 , B24B53/017 , B24B53/02 , B24B57/00 , H01L21/30625
摘要： A method and apparatus for conditioning polishing pads that utilize an apertured conditioning disk for introducing operation-specific slurries, without the need for additional tooling, platens, and materials handling. The method and apparatus utilize a vacuum capability to pull waste material out of the conditioning pad and through the apertured conditioning disk to evacuate the apparatus through an outlet port, the apparatus may also include self-contained flushing means and a piezo-electric device for vibrating the pad conditioning apparatus.
摘要翻译：一种用于调节抛光垫的方法和装置，其利用有孔调节盘来引入特定操作的浆料，而不需要额外的模具，压板和材料处理。该方法和装置利用真空能力将废料从调节垫中拉出并通过孔径调节盘通过出口排出装置，该装置还可以包括独立的冲洗装置和用于振动的压电装置垫调节装置。

7. 发明申请

WO2010148265A3 APERTURED ABRASIVE DISK ASSEMBLY WITH IMPROVED FLOW DYNAMICS 审中-公开
标题翻译：具有改进流动动力学的磨损磨料组件
公开(公告)号：WO2010148265A3
公开(公告)日：2011-04-07
申请号：PCT/US2010039104
申请日：2010-06-18
申请人： CONFLUENSE LLC , BENNER STEPHEN J , PETERS DARRYL W
发明人： BENNER STEPHEN J , PETERS DARRYL W
IPC分类号： B24D7/00 , B24D3/34 , B24D7/02 , B24D99/00
CPC分类号： B24D7/10 , B24B55/06
摘要： The evacuation properties of an abrasive disk are improved by forming its apertures to exhibit a configuration that will direct process fluids onto or away from a workpiece (or contact) interface through capillary action, surface tension/affinity, and/or boundary layer pump actions. The capillary action is accomplished by modifying the geometries of the apertures to form capillary tubes, where the orientation and lift angle of the capillary tubes is controlled to improve the flow of relatively thin layers of liquids. The surface tension/affinity between a liquid material and the abrasive disk is controlled by modifying the through-hole apertures to exhibit a serrated inner surface, which will decrease the attraction between the material of the abrasive disk and the process liquid. A plurality of apertured disks may be stacked, and their respective apertures properly arranged on each surface, to create a Tesla pump such that the kinetic energy associated with rotation of the disk assembly will preferentially bias both the vertical and tangential flow of liquids between the working surface and the disk assembly.
摘要翻译：研磨盘的排出性能通过形成其孔而改善，以形成将通过毛细管作用，表面张力/亲合性和/或边界层泵作用将工艺流体引导到工件（或接触）界面上或远离工件（或接触）界面的构造。通过改变孔的几何形状以形成毛细管来实现毛细管作用，其中毛细管的取向和提升角度被控制以改善相对薄的液体层的流动。液体材料和研磨盘之间的表面张力/亲合力通过改变通孔孔而显示出锯齿状的内表面来控制，这将减小研磨盘的材料与处理液体之间的吸引力。可以堆叠多个有孔的盘，并且它们各自的孔适当地布置在每个表面上，以产生特斯拉泵，使得与盘组件的旋转相关联的动能优先偏置工作之间的液体的垂直和切向流动表面和盘组件。

8. 发明申请

WO2010148265A2 APERTURED ABRASIVE DISK ASSEMBLY WITH IMPROVED FLOW DYNAMICS 审中-公开
标题翻译：具有改进流动动力学的磨损磨料组件
公开(公告)号：WO2010148265A2
公开(公告)日：2010-12-23
申请号：PCT/US2010/039104
申请日：2010-06-18
申请人： CONFLUENSE LLC , BENNER, Stephen, J. , PETERS, Darryl, W.
发明人： BENNER, Stephen, J. , PETERS, Darryl, W.
IPC分类号： B24D7/00 , B24D7/02 , B24D3/34 , B24D99/00
CPC分类号： B24D7/10 , B24B55/06
摘要： The evacuation properties of an abrasive disk are improved by forming its apertures to exhibit a configuration that will direct process fluids onto or away from a workpiece (or contact) interface through capillary action, surface tension/affinity, and/or boundary layer pump actions. The capillary action is accomplished by modifying the geometries of the apertures to form capillary tubes, where the orientation and lift angle of the capillary tubes is controlled to improve the flow of relatively thin layers of liquids. The surface tension/affinity between a liquid material and the abrasive disk is controlled by modifying the through-hole apertures to exhibit a serrated inner surface, which will decrease the attraction between the material of the abrasive disk and the process liquid. A plurality of apertured disks may be stacked, and their respective apertures properly arranged on each surface, to create a Tesla pump such that the kinetic energy associated with rotation of the disk assembly will preferentially bias both the vertical and tangential flow of liquids between the working surface and the disk assembly.
摘要翻译：研磨盘的排出性能通过形成其孔而改善，以形成将通过毛细管作用，表面张力/亲合性和/或边界层泵作用将工艺流体引导到工件（或接触）界面上或远离工件（或接触）界面的构造。通过改变孔的几何形状以形成毛细管来实现毛细管作用，其中毛细管的取向和提升角度被控制以改善相对薄的液体层的流动。液体材料和研磨盘之间的表面张力/亲合力通过改变通孔孔而显示出锯齿状的内表面来控制，这将减小研磨盘的材料与处理液体之间的吸引力。可以堆叠多个有孔的盘，并且它们各自的孔适当地布置在每个表面上，以产生特斯拉泵，使得与盘组件的旋转相关联的动能优先偏置工作之间的液体的垂直和切向流动表面和盘组件。

9. 发明申请

WO2008097627A1 CLEANING CUP SYSTEM FOR CHEMICAL MECHANICAL PLANARIZATION APPARATUS 审中-公开
标题翻译：化学机械平面设备清洁杯系统
公开(公告)号：WO2008097627A1
公开(公告)日：2008-08-14
申请号：PCT/US2008/001656
申请日：2008-02-07
申请人： TBW INDUSTRIES, INC. , BENNER, Stephen, J.
发明人： BENNER, Stephen, J.
IPC分类号： B24B7/22
CPC分类号： B24B53/017 , B24B57/02
摘要： The present invention is related to an improved cleaning cup arrangement for CMP systems that efficiently and effectively removes most, if not all, of any slurry material present on the abrasive conditioning disk and conditioner head as they are resting in the cup between conditioning cycles. The cleaning cup of the present invention includes an underside water knife for directing a high velocity stream of cleaning fluid against the rotating abrasive disk (or conditioning brush, which may be used instead of a disk) surface, and at least a pair of spray stems for directing columns of cleaning fluid with sufficient cleaning force against all exposed portions of the conditioner head.
摘要翻译：本发明涉及一种用于CMP系统的改进的清洁杯装置，其可有效且有效地去除磨损调理盘和调节器头上存在的大部分（如果不是全部）淤浆材料，因为它们在调节循环之间搁置在杯中。本发明的清洁杯包括用于将清洁流体的高速流引导到旋转研磨盘（或可用于代替盘）的旋转研磨盘（或调节刷），以及至少一对喷杆的下侧水刀用于以足够的清洁力将清洁液体列导向调节头的所有暴露部分。

10. 发明申请

WO2005072332B1 Chemical mechanical planarization process control utilizing in-situ conditioning process 审中-公开
标题翻译：化学机械平面化过程控制利用原位调节过程
公开(公告)号：WO2005072332B1
公开(公告)日：2006-06-22
申请号：PCT/US2005002314
申请日：2005-01-25
申请人： TBW IND INC , BENNER STEPHEN J , LI YUZHUO
发明人： BENNER STEPHEN J , LI YUZHUO
IPC分类号： B24B37/04 , B24B49/18
CPC分类号： B24B37/042 , B24B49/18
摘要： A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement (15) for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module (30) for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.
摘要翻译：用于在CMP系统中提供过程控制的系统和方法利用真空辅助装置（15）来调节晶片抛光垫，使得来自调节器的流出物（即，晶片碎片，抛光浆料，化学品或其它副产物）过程从废物流中转移，而是引入到分析模块（30）中用于进一步处理。分析模块用于确定流出物内的至少一个参数，并基于分析生成过程控制信号。然后将过程控制信号反馈到平坦化过程，以允许控制各种参数，例如抛光浆料组成，温度，流速等。过程控制信号还可用于控制调节过程和/或确定平坦化过程本身的终点。

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