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    • 1. 发明申请
    • CHEMICAL MECHANICAL PLANARIZATION PROCESS CONTROL UTILIZING IN-SITU CONDITIONING PROCESS
    • 利用现场调节过程的化学机械平面化过程控制
    • WO2005072332A3
    • 2006-03-16
    • PCT/US2005002314
    • 2005-01-25
    • TBW IND INCBENNER STEPHEN JLI YUZHUO
    • BENNER STEPHEN JLI YUZHUO
    • B24B37/04B24B49/18B24B1/00B24B49/00B24B51/00
    • B24B37/042B24B49/18
    • A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement (15) for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module (30) for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.
    • 用于在CMP系统中提供过程控制的系统和方法利用真空辅助装置(15)来调节晶片抛光垫,使得来自调节器的流出物(即,晶片碎片,抛光浆料,化学品或其它副产物) 过程从废物流中转移,而是引入到分析模块(30)中用于进一步处理。 分析模块用于确定流出物内的至少一个参数,并基于分析生成过程控制信号。 然后将过程控制信号反馈到平坦化过程,以允许控制各种参数,例如抛光浆料组成,温度,流速等。过程控制信号还可用于控制调节过程和/或确定 平坦化过程本身的终点。
    • 2. 发明申请
    • Chemical mechanical planarization process control utilizing in-situ conditioning process
    • 化学机械平面化过程控制利用原位调节过程
    • WO2005072332B1
    • 2006-06-22
    • PCT/US2005002314
    • 2005-01-25
    • TBW IND INCBENNER STEPHEN JLI YUZHUO
    • BENNER STEPHEN JLI YUZHUO
    • B24B37/04B24B49/18
    • B24B37/042B24B49/18
    • A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement (15) for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module (30) for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.
    • 用于在CMP系统中提供过程控制的系统和方法利用真空辅助装置(15)来调节晶片抛光垫,使得来自调节器的流出物(即,晶片碎片,抛光浆料,化学品或其它副产物) 过程从废物流中转移,而是引入到分析模块(30)中用于进一步处理。 分析模块用于确定流出物内的至少一个参数,并基于分析生成过程控制信号。 然后将过程控制信号反馈到平坦化过程,以允许控制各种参数,例如抛光浆料组成,温度,流速等。过程控制信号还可用于控制调节过程和/或确定 平坦化过程本身的终点。
    • 5. 发明申请
    • ENHANCED END EFFECTOR ARM ARRANGEMENT FOR CMP PAD CONDITIONING
    • 用于CMP PAD调节的增强型端部效应器臂布置
    • WO2007008822A3
    • 2008-01-10
    • PCT/US2006026771
    • 2006-07-10
    • TBW IND INCBENNER STEPHEN J
    • BENNER STEPHEN J
    • B24B33/00B24B53/017
    • B24B53/017
    • A CMP conditioning apparatus enhanced end effector arm for improving the reliability of the apparatus and the quality of the conditioning and polishing operations includes a conditioner head with features that provide for simplified alignment/attachment of a conditioning disk to the arm, while also providing a "quick release" mechanism for maintenance operations. The enhanced arm also includes an improved actuator that provides for a static friction ("stiction")-free movement of the arm and better control of the downforce applied by the conditioning disk to the polishing pad. A dual-drive pulley system is used within the enhanced end effector arm to minimize the tilting of the drive belts within the effector arm as the arm pivots to follow the contour of an "aging" polishing pad.
    • 一种CMP调节装置增强的末端执行器臂,用于提高装置的可靠性并且调节和抛光操作的质量包括具有提供调节盘与臂的对准/附接的特征的调节头,同时还提供“ 快速释放“维护操作机制。 增强臂还包括改进的致动器,其提供静摩擦(“静摩擦”) - 臂的自由移动,并且更好地控制由调节盘施加到抛光垫的下压力。 在增强的末端执行器臂中使用双驱动滑轮系统,以便当臂枢转以跟随“老化”抛光垫的轮廓时,使得效应器臂内的传动带的倾斜度最小化。
    • 6. 发明申请
    • APERTURED CONDITIONING BRUSH FOR CHEMICAL MECHANICAL PLANARIZATION SYSTEMS
    • 用于化学机械平面化系统的烧伤调节刷
    • WO2007047996A3
    • 2007-10-04
    • PCT/US2006041166
    • 2006-10-19
    • TBW IND INCBENNER STEPHEN J
    • BENNER STEPHEN J
    • B24B9/00
    • B24B53/017B24B53/12B24B57/00B24D13/145
    • An apparatus for conditioning the polishing pad of a chemical mechanical planapzation (CMP) system including an apertured conditioning disk formed to support a plurality of brush bristles in any desired configuration The bnstles are utilized to lift out debris an contaminants that have been lodged within the deep pores of polishing pads, particularly "sofi" polishing pads (or polishing felts) The apertures in the conditioning disk are used to allow for the efficient evacuation of the effluent created dupng the conditioning process The apertures may also be used to introduce conditioning fluids as the bnstles are brushing the surface to assist in the conditioning process The utilization of the apertures to evacuate the effluent (via an attached vacuum source) overcomes problems associated wit the ppor art by immediately removing the dislodged matepal from the pad surface before it has an opportunity to be re-incorporated int the polishing pad.
    • 一种用于调节化学机械平面化(CMP)系统的抛光垫的设备,包括形成为以任何所需配置支撑多个刷毛的孔径调节盘。该b杆用于提取已经存放在深度内的污染物 抛光垫的孔,特别是“sofi”抛光垫(或抛光毡)调节盘中的孔用于允许有效排出所产生的流出物,重复调节过程。孔也可用于将调节流体作为 bnstles正在刷表面以辅助调理过程利用孔排出流出物(通过附着的真空源)克服了与现有技术相关的问题,在其具有机会之前立即从垫表面去除移除的材料 在抛光垫中重新加入。
    • 7. 发明申请
    • MULTI-STEP PAD CONDITIONINGH SYSTEM AND METHOD FOR CHEMICAL PLANARIZATION
    • 多阶梯面调节系统及其化学方法
    • WO2005072338A3
    • 2006-06-01
    • PCT/US2005002340
    • 2005-01-25
    • TBW IND INCBENNER STEPHEN J
    • BENNER STEPHEN J
    • B24B1/00B08B3/14B08B7/00B24B5/00B24B7/00B24B7/19B24B9/00B24B21/18B24B29/00B24B33/00B24B37/04B24B53/007B24B57/02B24C5/00C03C23/00C23G1/02H01L21/302H01L21/321H01L21/46
    • H01L21/3212B24B53/017B24B57/02
    • An arrangement for performing a multi-step polishing process on a single stage chemical mechanical planarization (CMP) apparatus utilizes an in-situ conditioning operation to continuously clean and evacuate debris and spent polishing slurry from the surface of the polishing pad. By presenting a clean, virtually "new" polishing pad surface at the beginning of each planarization cycle, polishing agents of different chemistries, morphologies, temperatures, etc. may be used without the need to remove the wafer to change the polishing source or transfer the wafer to another CMP polishing station. A multi-positional valve may be used to control the introduction of various process fluids, including a variety of different polishing slurries and conditioning/flushing agents. The use of different conditioning materials allows for the surface of the polishing pad to be altered for different process conditions (e.g., neutralizing prior polishing chemicals, modifying the surface temperature of the pad to control polishing rate, use of surfactants to dislodge particles that become attracted to the pad surface, etc.).
    • 用于在单级化学机械平面化(CMP)装置上进行多步抛光工艺的装置利用原位调节操作,从抛光垫的表面连续地清洁和排出碎屑和废抛光浆料。 通过在每个平坦化循环开始时提供干净的,实际上“新的”抛光垫表面,可以使用不同化学,形态,温度等的抛光剂,而不需要去除晶片来改变抛光源或转移 晶圆到另一个CMP抛光台。 多位置阀可用于控制各种工艺流体的引入,包括各种不同的抛光浆料和调理/冲洗剂。 使用不同的调理材料允许在不同的工艺条件下改变抛光垫的表面(例如,中和以前的抛光化学品,改变焊盘的表面温度以控制抛光速率,使用表面活性剂去除被吸引的颗粒 到垫表面等)。
    • 8. 发明申请
    • VACUUM LINE CLEAN-OUT SEPARATOR SYSTEM
    • 真空管线清洁分离器系统
    • WO2008042444A3
    • 2008-06-19
    • PCT/US2007021371
    • 2007-10-05
    • TBW INDBENNER STEPHEN J
    • BENNER STEPHEN J
    • A47L5/38B01D50/00
    • B01D45/16B04C5/185B04C11/00B04C2009/004
    • A vacuum clean-out system including a separator chamber and associated collection chamber for removing liquid material and debris from a vacuum output and providing a vacuum return line free of contaminants. A vacuum exhaust line is coupled to a cyclonic separator chamber that induces a circular rotation within the incoming vacuum stream, causing the liquid and debris to fall to the botto while the "clean" vacuum is drawn upwards into a return line. The collection chamber is at the same negative pressure as the separator chamber so that accumulating liquid and debris easily drains into the collection chamber. A sensor associated with the collection chamber determines when the collection chamber is full. At that point, the separator chamber is isolated from the collection chamber, the collection chamber is vented and the accumulated material is discharged and/or analyzed. The separator chamber can continue the vacuum clean-out process uninterrupted.
    • 真空清除系统,包括分离器室和相关联的收集室,用于从真空输出中除去液体材料和碎屑,并提供没有污染物的真空回流管线。 真空排气管线连接到气旋分离器室,其在进入的真空流内引起圆形旋转,导致液体和碎屑落到机器人上,同时“清洁”真空向上拉到返回管线中。 收集室处于与分离器室相同的负压,使得积聚的液体和碎屑容易地排入收集室。 与收集室相关联的传感器确定收集室何时已满。 此时,分离器室与收集室隔离,收集室被排出并且积聚的材料被排放和/或分析。 分离器室可以不间断地继续真空清除过程。
    • 10. 发明申请
    • APERTURED ABRASIVE DISK ASSEMBLY WITH IMPROVED FLOW DYNAMICS
    • 具有改进流动动力学的磨损磨料组件
    • WO2010148265A3
    • 2011-04-07
    • PCT/US2010039104
    • 2010-06-18
    • CONFLUENSE LLCBENNER STEPHEN JPETERS DARRYL W
    • BENNER STEPHEN JPETERS DARRYL W
    • B24D7/00B24D3/34B24D7/02B24D99/00
    • B24D7/10B24B55/06
    • The evacuation properties of an abrasive disk are improved by forming its apertures to exhibit a configuration that will direct process fluids onto or away from a workpiece (or contact) interface through capillary action, surface tension/affinity, and/or boundary layer pump actions. The capillary action is accomplished by modifying the geometries of the apertures to form capillary tubes, where the orientation and lift angle of the capillary tubes is controlled to improve the flow of relatively thin layers of liquids. The surface tension/affinity between a liquid material and the abrasive disk is controlled by modifying the through-hole apertures to exhibit a serrated inner surface, which will decrease the attraction between the material of the abrasive disk and the process liquid. A plurality of apertured disks may be stacked, and their respective apertures properly arranged on each surface, to create a Tesla pump such that the kinetic energy associated with rotation of the disk assembly will preferentially bias both the vertical and tangential flow of liquids between the working surface and the disk assembly.
    • 研磨盘的排出性能通过形成其孔而改善,以形成将通过毛细管作用,表面张力/亲合性和/或边界层泵作用将工艺流体引导到工件(或接触)界面上或远离工件(或接触)界面的构造。 通过改变孔的几何形状以形成毛细管来实现毛细管作用,其中毛细管的取向和提升角度被控制以改善相对薄的液体层的流动。 液体材料和研磨盘之间的表面张力/亲合力通过改变通孔孔而显示出锯齿状的内表面来控制,这将减小研磨盘的材料与处理液体之间的吸引力。 可以堆叠多个有孔的盘,并且它们各自的孔适当地布置在每个表面上,以产生特斯拉泵,使得与盘组件的旋转相关联的动能优先偏置工作之间的液体的垂直和切向流动 表面和盘组件。