基本信息:
- 专利标题： ACTIVE TRIBOLOGY MANAGEMENT OF CMP POLISHING MATERIAL
- 专利标题（中）：CMP抛光材料的活性物理学研究
- 申请号：PCT/US2011/021224 申请日：2011-01-14
- 公开(公告)号：WO2011088275A2 公开(公告)日：2011-07-21
- 发明人： BENNER, Stephen, J. , PETERS, Darryl, W.
- 申请人： CONFLUENSE LLC , BENNER, Stephen, J. , PETERS, Darryl, W.
- 申请人地址： 7277 William Avenue Suite 300 Allentown, PA 18106 US
- 专利权人： CONFLUENSE LLC,BENNER, Stephen, J.,PETERS, Darryl, W.
- 当前专利权人： CONFLUENSE LLC,BENNER, Stephen, J.,PETERS, Darryl, W.
- 当前专利权人地址： 7277 William Avenue Suite 300 Allentown, PA 18106 US
- 代理机构： KOBA, Wendy, W.
- 优先权： US13/005,633 20110113; US61/295,336 20100115
摘要：
An arrangement and method for managing the tribology associated with a chemical mechanical planarization (CMP) process continuously monitors and modifies the properties of a polishing slurry in order to assist in controlling the removal rate associated with the CMP process. The viscosity of slurry as it leaves the CMP system ("spent slurry") and the material removal rate associated with the semiconductor wafer are measured, and then the viscosity of the incoming slurry is adjusted if the measured material removal rate differs from a desired removal rate. If the removal rate is considered to be too fast, the viscosity of the fresh slurry being dispensed onto polishing pad is decreased; alternatively, if the removal rate is too slow, the viscosity is increased. As an alternative to modifying the viscosity of the slurry (or, perhaps in addition to modifying the viscosity), a lubricant may be added to the slurry to slow down the removal rate.
摘要（中）：
用于管理与化学机械平面化（CMP）工艺相关联的摩擦学的布置和方法连续监测和修改抛光浆料的性质，以帮助控制与CMP工艺相关的去除速率。 测量浆料离开CMP系统（“废浆”）时的粘度和与半导体晶片相关的材料去除速率，然后如果测量的材料去除速率与所需的去除率不同，则调整进料浆料的粘度 率。 如果去除速度被认为太快，则分配到抛光垫上的新鲜浆料的粘度降低; 或者，如果去除速度太慢，则粘度增加。 作为改变浆料粘度的替代方法（或者可能除了改变粘度之外），可以向浆料中加入润滑剂以减缓去除速率。