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1. 发明申请

WO2015026390A1 SELF-ALIGNED INTERCONNECTS FORMED USING SUBTRACTIVE TECHNIQUES 审中-公开
标题翻译：使用隐含技术形成的自对准互连
公开(公告)号：WO2015026390A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/000177
申请日：2014-08-07
申请人： APPLIED MATERIALS, INC.
发明人： MEBARKI, Bencherki , DAI, Huixiong , CHEN, Yongmei , REN, He , NAIK, Mehul
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/32139 , H01L21/76885 , H01L23/53257 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive materials.
摘要翻译：在10nm节点（16nm HPCD）下至5nm节点（7nm HPCD）或更低的半导体或MEMS结构处形成互连结构的方法，其中互连结构的导电触点仅使用减法技术应用于导电材料的保形层。

2. 发明申请

WO2014130004A1 ZORI STYLE SHOES WITH BIRD IN FLIGHT INSERTS 审中-公开
标题翻译： ZORI风格的鞋子与BIRD在飞行插件
公开(公告)号：WO2014130004A1
公开(公告)日：2014-08-28
申请号：PCT/US2013/000047
申请日：2013-02-21
申请人： KATZ, Marcella, Miriam
发明人： KATZ, Marcella, Miriam
IPC分类号： A43B23/00
CPC分类号： A43B23/24 , A43B3/105 , A43B3/242
摘要： Zori style fashion shoes which hold a decorative insert. The zori straps are tubular in nature, with a transparent upper surface. An opening between the right and left straps enables the insertion of a decorative insert. A one piece decorative insert extends into the right strap and the left strap. The wearer of the shoe can remove and replace an insert with another of a different design. A transparent hook like tongue may extend from one strap to another, to protect the insert from soiling. Optionally, the straps may have a springy section of material applied at the end near the arch section of the shoe.
摘要翻译：佐里风格的时尚鞋，其中装有镶嵌件。蓝色皮带是管状的，具有透明的上表面。右肩带和左肩带之间的开口可以插入装饰插入物。一件装饰插入物延伸到右肩带和左肩带。鞋的佩戴者可以用另一种不同的设计来移除和替换插入物。透明的钩状舌状物可以从一个带延伸到另一个，以保护插入物不被污染。可选地，带子可以具有在鞋的拱形部分附近端部施加的弹性部分材料。

3. 发明申请

WO2014031091A1 SHOES WITH A FASHION DESIGN MOUNTING BASE MATERIAL FOR USE WITH INTERCHANGEABLE FASHION DESIGN ATTACHMENTS 审中-公开
标题翻译：具有时尚设计安装基座的鞋子与可交换时尚设计附件使用
公开(公告)号：WO2014031091A1
公开(公告)日：2014-02-27
申请号：PCT/US2012/000363
申请日：2012-08-20
申请人： IN EDEN PROPERTIES, LLC (COMPANY) , KATZ, Marcella, Miriam
发明人： KATZ, Marcella, Miriam
IPC分类号： A43B23/24
CPC分类号： A43B23/24 , A43B1/0072 , A43B1/0081 , A43B3/0078
摘要： The present invention relates to a shoe, including sandals, for men, women, and children, wherein the shoe includes a shoe display strip which traverses from an ankle strap of the shoe to a forefoot area of the shoe, along a centerline of a sole of the shoe, and wherein a top-facing surface of the shoe display strip includes a fashion design mounting base material which enables the attachment of at least one fashion design attachment. The fashion design attachment may be present in a pouch of showcase which is attached to the fashion design mounting base material, or may be attached directly to the fashion design mounting base material.
摘要翻译：本发明涉及一种用于男士，女士和儿童的鞋，包括凉鞋，其中鞋包括穿过鞋的踝带到鞋的前脚掌区域的鞋展示条，沿着鞋底的中心线并且其中所述鞋展示条的顶面表面包括能够附接至少一种时尚设计附件的时尚设计安装基底材料。时尚设计附件可以存在于连接到时装设计安装基材的展示柜的小袋中，或者可以直接附接到时装设计安装基材。

4. 发明申请

WO2013180758A1 METHOD OF FABRICATING A SELF-ALIGNED BURIED BIT LINE FOR A VERTICAL CHANNEL DRAM 审中-公开
标题翻译：一种用于垂直通道DRAM的自对准的BIT线的制作方法
公开(公告)号：WO2013180758A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/000142
申请日：2013-05-24
申请人： APPLIED MATERIALS, INC
发明人： CHANG, Chorng-Ping , WOOD, Bingxi , PING, Er-Xuan
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L21/76889 , H01L21/743 , H01L23/498 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a self-aligned buried bit line in a structure which makes up a portion of a vertical channel DRAM. The materials and processes used enable self- alignment of elements of the buried bit line during the fabrication process. In addition, the materials and processes used enable for formation of individual DRAM cells which have a buried bit line width which is 16 nm or less.
摘要翻译：在构成垂直通道DRAM的一部分的结构中制造自对准埋入位线的方法。所使用的材料和工艺在制造过程中能够对埋入的位线的元件进行自对准。此外，所使用的材料和工艺能够形成具有16nm或更小的掩埋位线宽度的各个DRAM单元。

5. 发明申请

WO2007041101A2 BEAM EXPOSURE WRITING STRATEGY SYSTEM AND METHOD 审中-公开
标题翻译：光束曝光写作策略系统及方法
公开(公告)号：WO2007041101A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/037485
申请日：2006-09-26
申请人： APPLIED MATERIALS, INC.
发明人： BULLER, Benyamin , LOZES, Richard, L.
IPC分类号： H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/30488 , H01J2237/30494
摘要： A beam exposure writing strategy method and system are disclosed for exposing a desired pattern on a substrate, by raster scanning a beam such as a particle beam, across a major field on the substrate. The beam is also vector scanned across a minor field of the substrate superimposed along the major field raster scan. The beam is selectively blanked and unblanked as the beam is being scanned. The unblanked flashes of the beam are modulated in coordination with the raster and vector scanning to expose the desired pattern on the substrate. The disclosed system and method generating an adjustable length microvector having a maximum range of at least about N time a nominal length λ, where N is equal to four and λ is substantially equal to a dimension of a nominal flash area, the nominal flash location dimension being substantially greater than a major field cell dimension.
摘要翻译：公开了一种束曝光写入策略方法和系统，用于通过在衬底上的主场上光栅扫描诸如粒子束的光束来在衬底上暴露期望的图案。光束也沿着主场光栅扫描叠加的衬底的次视场矢量扫描。当光束被扫描时，光束被选择性地消隐并被取消闪烁。与光栅和矢量扫描协调地调制光束的未闪烁闪光以暴露衬底上的期望图案。所公开的系统和方法产生可调长度的微向量，其具有至少约N倍的标称长度α的最大范围，其中N等于4，基本上等于标称闪光面积的尺寸，标称闪光位置尺寸基本上大于主场单元尺寸。

6. 发明申请

WO2006110860A1 CHAMBERED ELECTRODEIONIZATION APPARATUS WITH UNIFORM CURRENT DENSITY, AND METHOD OF USE 审中-公开
标题翻译：具有均匀电流密度的电化学电极装置及其使用方法
公开(公告)号：WO2006110860A1
公开(公告)日：2006-10-19
申请号：PCT/US2006/013779
申请日：2006-04-13
申请人： RIVIELLO, John, M.
IPC分类号： B01D61/48 , C02F1/469
CPC分类号： B01D61/48 , B01D61/52 , B01J47/08 , B01J49/08 , B01J49/30 , C02F1/4695 , C02F1/4696
摘要： The present invention pertains to a specialized electrodeionization (EDI) apparatus that includes at least 5 chambers and to a method of using this apparatus. The EDI of the present invention (1) is a continuous EDI (CEDI) apparatus, with constant regeneration of ion exchange materials; (2) has improved removal of all ions 'as a result of homogeneous anion and cation deletion chambers, while providing a uniform current density within each chamber; (3) has reduced scale accumulation; and (4) has homogeneous anion and cation depletion chambers that are at least 12 mm thick, without the negative impact on performance that is typical in the art of chambers greater than 10 mm thick. Liquids such as water, acids, bases, or salts can be deionized using this apparatus.
摘要翻译：本发明涉及包括至少5个腔室的专用电去离子（EDI）装置以及使用该装置的方法。本发明的EDI（1）是连续EDI（CEDI）装置，其具有离子交换材料的恒定再生; （2）由于均匀的阴离子和阳离子缺失室，改善了所有离子的去除，同时在每个室内提供均匀的电流密度; （3）规模积累减少; 和（4）具有均匀的阴离子和阳离子消耗室，其厚度至少为12mm，而对于大于10mm厚的室的技术中典型的性能没有负面影响。液体如水，酸，碱或盐可以使用该装置去离子。

7. 发明申请

WO2005074017A1 A STRESS-TUNED, SINGLE-LAYER SILICON NITRIDE FILM AND METHOD OF DEPOSITION THEREFORE 审中-公开
标题翻译：应力调节单层氮化硅薄膜及其沉积方法
公开(公告)号：WO2005074017A1
公开(公告)日：2005-08-11
申请号：PCT/US2005/002473
申请日：2005-01-25
申请人： APPLIED MATERIALS, INC. , JUNG, KeeBum , TANG, Sum-Yee, Betty , SEAMONS, Martin, Jay , ARGHAVANI, Reza , JUCO, Eller, Y.
发明人： JUNG, KeeBum , TANG, Sum-Yee, Betty , SEAMONS, Martin, Jay , ARGHAVANI, Reza , JUCO, Eller, Y.
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , H01J37/32165 , H01L21/02274 , H01L21/3185 , H01L29/7842 , H01L29/7843
摘要： We have discovered that is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters. These parameters include: use of multiple (typically dual) power input sources operating within different frequency ranges; the deposition temperature; the process chamber pressure; and the composition of the deposition source gas. In particular, we have found that it is possible to produce a single-layer, thin (300 Å to 1000 Å thickness) silicon nitride film having a stress tuned to be within the range of about - 1.4 GPa (compressive) to about + 1.5 GPa (tensile) by depositing the film by PECVD, in a single deposition step, at a substrate temperature within the range of about 375°C to about 525 ° C, and over a process chamber pressure ranging from about 2 Torr to about 15 Torr.
摘要翻译：我们已经发现可以通过操纵某些膜沉积参数来调节单层氮化硅膜的应力。这些参数包括：使用在不同频率范围内工作的多个（通常为双路）电源输入源; 沉积温度; 处理室压力; 和沉积源气体的组成。特别地，我们已经发现，可以生产具有调节在约1.4GPa（压缩）至约+ 1.5范围内的应力的单层，薄（300至1000厚）的氮化硅膜 GPa（拉伸）通过在单一沉积步骤中通过PECVD沉积膜，在约375℃至约525℃范围内的衬底温度下，并且在约2乇至约2乇的处理室压力 15乇

8. 发明申请

WO2014149128A1 METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS AND METHOD OF FABRICATION 审中-公开
标题翻译：场效应晶体管的金属门结构和制造方法
公开(公告)号：WO2014149128A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/000024
申请日：2014-02-26
申请人： APPLIED MATERIALS, INC.
发明人： YOSHIDA, Naomi , BRAND, Adam
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要： The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15nm range or lower.
摘要翻译：本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。所描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需要的。

9. 发明申请

WO2010056294A2 CORROSION-RESISTANT BONDING AGENTS FOR BONDING CERAMIC COMPONENTS WHICH ARE EXPOSED TO PLASMAS 审中-公开
标题翻译：用于粘合陶瓷元件的耐腐蚀粘合剂，暴露于等离子体
公开(公告)号：WO2010056294A2
公开(公告)日：2010-05-20
申请号：PCT/US2009/006008
申请日：2009-11-05
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Jennifer, Y. , DUAN, Ren-guan , COLLINS, Kenneth, S.
IPC分类号： C04B41/85 , C04B41/81 , C04B41/45 , C04B35/553 , C04B35/01
CPC分类号： C03C10/16 , C03C3/247 , C03C3/325 , C03C8/24 , C03C2204/00 , C04B35/119 , C04B37/005 , C04B2235/3201 , C04B2235/3206 , C04B2235/3225 , C04B2235/445 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/80 , C04B2237/06 , C04B2237/064 , C04B2237/08 , C04B2237/10 , C04B2237/34 , C04B2237/343 , C04B2237/60 , C04B2237/708 , C04B2237/72 , H01L21/6719
摘要： Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties.
摘要翻译：本发明的实施例涉及可用作等离子体处理室中的设备的组件结构。使用含氟氧化物的釉料，玻璃陶瓷及其组合将部分组分结构粘合在一起。该粘结材料耐含卤素等离子体并具有理想的机械性能。

10. 发明申请

WO2007041059A2 COOLING MODULE FOR CHARGED PARTICLE BEAM COLUMN ELEMENTS 审中-公开
标题翻译：充电颗粒光束元件的冷却模块
公开(公告)号：WO2007041059A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/037224
申请日：2006-09-25
申请人： APPLIED MATERIALS, INC.
发明人： JASINSKI, Thomas , WINKLER, Dieter , ECKES, William, A.
IPC分类号： H01J1/50
CPC分类号： H01J37/141 , H01J2237/002
摘要： We have developed a method and apparatus for cooling electromagnetic lens coils of the kind used in charged particle beams. The method and apparatus provide not only a symmetrical cooling effect around the optical axis of the charged particle beam, but also provide improved uniformity of heat transfer. This improved uniformity enables control over the optical axis of the charged particle beam within about 1 nm for high current charged particle beam columns, wherein the current ranges from about 100 nanoamps to about 1000 nanoamps. The use of a squat and wide electromagnetic lens coil in combination with an essentially flat modular cooling panel, which provides uniform cooling to the electromagnetic lens coil, not only enables control over the optical axis of the charged particle beam, but also provides mechanical stability for the charged particle beam column.
摘要翻译：我们开发了一种用于冷却带电粒子束中使用的电磁透镜线圈的方法和装置。该方法和装置不仅提供了带电粒子束的光轴周围的对称冷却效果，而且提供了改善的传热均匀性。这种改进的均匀性使得能够对高电流带电粒子束柱控制带电粒子束的光轴在约1nm内，其中电流范围为约100纳安 - 约1000纳帕。使用蹲式和宽电磁透镜线圈与基本上平坦的模块化冷却面板组合，其提供对电磁透镜线圈的均匀冷却，不仅能够控制带电粒子束的光轴，而且还提供机械稳定性带电粒子束柱。

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