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1. 发明申请

WO2016126472A1 APPARATUSES AND METHODS FOR SCATTER AND GATHER 审中-公开
标题翻译：散热器和加热器的装置和方法
公开(公告)号：WO2016126472A1
公开(公告)日：2016-08-11
申请号：PCT/US2016/015027
申请日：2016-01-27
申请人： MICRON TECHNOLOGY, INC.
发明人： ZAWODNY, Jason T. , DOBELSTEIN, Kelley , FINKBEINER, Timothy P. , MURPHY, Richard C.
IPC分类号： G11C7/06 , G11C5/14
CPC分类号： G11C7/1006 , G06F3/061 , G06F3/0659 , G06F3/0685 , G11C7/06 , G11C7/065 , G11C7/1036 , G11C8/12 , G11C11/4087 , G11C11/4091 , G11C11/4096
摘要： The present disclosure includes apparatuses and methods related to scatter/gather in a memory device. An example apparatus comprises a memory device that includes an array of memory cells, sensing circuitry, and a memory controller coupled to one another. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A channel controller is configured to receive a block of instructions, the block of instructions including individual instructions for at least one of a gather operation and a scatter operation. The channel controller is configured to send individual instructions to the memory device and to control the memory controller such that the at least one of the gather operation and the scatter operation is executed on the memory device based on a corresponding one of the individual instructions.
摘要翻译：本公开包括与分散/收集在存储器件中相关的装置和方法。示例性装置包括存储器装置，其包括存储器单元阵列，感测电路和彼此耦合的存储器控制器。感测电路包括读出放大器和被配置为实现逻辑运算的计算组件。信道控制器被配置为接收指令块，所述指令块包括用于收集操作和分散操作中的至少一个的单独指令。信道控制器被配置为向存储器设备发送单独的指令并且控制存储器控制器，使得基于相应的一个单独指令在存储器设备上执行采集操作和散射操作中的至少一个。

2. 发明申请

WO2008063360A2 REMOTE ACCESS 审中-公开
标题翻译：远程访问
公开(公告)号：WO2008063360A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/022890
申请日：2007-10-30
申请人： JUMPNODE SYSTEMS LLC , KHAN, Irfan, Z. , COOPET, Mitchell, Y. , DORNQUAST, Matthew, D. , BAKER, Richard, C. , LINDQUIST, Peter, J.
发明人： KHAN, Irfan, Z. , COOPET, Mitchell, Y. , DORNQUAST, Matthew, D. , BAKER, Richard, C. , LINDQUIST, Peter, J.
IPC分类号： H04L29/06 , H04L12/28
CPC分类号： H04L41/00 , H04L43/06 , H04L43/0817 , H04L63/029 , H04L63/0421 , H04L63/0428
摘要： Systems and methods, and devices are provided for remote access. One method includes requesting access to a first device from a second device remote to the first device. The method includes processing the access request at an access hub remote to the first device. An internal node is used to open an encrypted connection to a connection manager based on the access request. Access information is provided from the access hub to the second device based on the access request. A communication session is established in which communications between the second device and the first device are forwarded through the connection manager and the internal node by using the encrypted connection.
摘要翻译：系统和方法以及设备用于远程访问。一种方法包括请求从远离第一设备的第二设备访问第一设备。该方法包括在远离第一设备的接入集线器处理该接入请求。内部节点用于根据访问请求打开到连接管理器的加密连接。基于访问请求，从访问集线器向第二设备提供访问信息。建立通信会话，其中第二设备和第一设备之间的通信通过连接管理器和内部节点通过使用加密的连接被转发。

3. 发明申请

WO2009045250A1 SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：半导体处理
公开(公告)号：WO2009045250A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/009457
申请日：2008-08-07
申请人： MICRON TECHNOLOGY, INC. , SURTHI, Shyam
发明人： SURTHI, Shyam
IPC分类号： H01L21/205
CPC分类号： C23C16/45546 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02211 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer (104-1, 104-2) on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first (REACTANTl, Rl) and a second (REACTANT2, R2) reactant sequentially introduced into a reaction chamber (202, 402) having an associated process temperature. The method includes removing residual first reactant (REACTANTl, Rl) from the chamber (202, 402) after introduction of the first reactant (REACTANTl, Rl), removing residual second reactant (REACTANT2, R2) from the chamber (202, 402) after introduction of the second reactant(REACTANT2, R2), and establishing a temperature differential substantially between an edge of the substrate and a center (105)of the substrate via a purge process.
摘要翻译：本公开的实施例包括半导体处理方法和系统。一种方法包括在半导体衬底上形成材料层（104-1,104-2），通过将衬底的沉积表面暴露于至少第一（REACTANT1，R1）和第二（REACTANT2，R2）具有相关联的处理温度的反应室（202,402）。该方法包括在引入第一反应物（REACTANT1，R1）之后从腔室（202,402）中除去残余的第一反应物（REACTANT1，R1），然后从腔室（202,402）中除去残留的第二反应物（REACTANT2，R2）引入第二反应物（REACTANT2，R2），以及通过净化过程基本上在衬底的边缘和衬底的中心（105）之间建立温差。

4. 发明申请

WO2008076152A2 NANOSCALE FLOATING GATE AND METHODS OF FORMATION 审中-公开
标题翻译： NANOSCALE FLIPTING GATE AND METHODS OF FORMATION
公开(公告)号：WO2008076152A2
公开(公告)日：2008-06-26
申请号：PCT/US2007/017414
申请日：2007-08-03
申请人： MICRON TECHNOLOGY, INC. , SANDHU, Gurtej, S. , RAMASWAMY, D.v., Nirmal
发明人： SANDHU, Gurtej, S. , RAMASWAMY, D.v., Nirmal
CPC分类号： H01L29/788 , B82Y10/00 , B82Y99/00 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42324 , H01L29/66825 , H01L29/7881 , Y10S977/721 , Y10S977/762
摘要： A memory cell is provided including a tunnel dielectric layer overlying a semiconductor substrate. The memory cell also includes a floating gate having a first portion overlying the tunnel dielectric layer and a second portion in the form of a nanorod extending from the first portion. In addition, a control gate layer is separated from the floating gate by an intergate dielectric layer.
摘要翻译：提供了包括覆盖在半导体衬底上的隧道电介质层的存储单元。存储单元还包括具有覆盖隧道介电层的第一部分的浮动栅极和从第一部分延伸的纳米棒形式的第二部分。此外，控制栅极层通过隔间电介质层与浮置栅极分离。

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