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71. 发明申请

WO99007009A1 METHOD OF AND MACHINE FOR PATTERN WRITING BY AN ELECTRON BEAM 审中-公开
标题翻译：用于通过电子束编写图案的方法和机器
公开(公告)号：WO99007009A1
公开(公告)日：1999-02-11
申请号：PCT/EP1998/004390
申请日：1998-07-15
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/043 , H01J2237/30488 , H01J2237/30494 , H01J2237/31769
摘要： A method of writing a pattern on the surface of a substrate (13), for example a circuit on a resist-coated wafer, by an electron beam comprises the steps of exposing the substrate surface to an electron beam (12) which is controlled to progressively describe the pattern by stepped movement of a focused spot of the beam over the surface. The exposure of the surface to the beam is varied by selectably modulating the beam, such as through deflection by deflecting plates (17) to and from a blanking element (16), in the periods between successive movement steps so as to reduce the electron dose in predetermined positions of the beam spot on the surface.
摘要翻译：通过电子束在基板（13）表面上形成图案的方法，例如在抗蚀剂涂覆晶片上的电路的方法包括以下步骤：将基板表面暴露于电子束（12），该电子束被控制为逐渐地通过在该表面上的束的聚焦点的阶梯式运动来描述图案。通过可选择地调节光束，例如通过在连续的移动步骤之间的时间段内通过偏转板（17）到消隐元件（16）和从消隐元件（16）偏转来改变表面到光束的曝光，以便减少电子剂量在表面上的束斑的预定位置。

72. 发明申请

WO1998001903A1 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：WO1998001903A1
公开(公告)日：1998-01-15
申请号：PCT/JP1996001901
申请日：1996-07-09
申请人： HITACHI, LTD. , IKOTA, Masami , SUGIMOTO, Aritoshi
发明人： HITACHI, LTD.
IPC分类号： H01L21/66
CPC分类号： B82Y10/00 , B82Y40/00 , G01N21/9501 , G01N21/956 , G03F1/84 , G03F7/70425 , G03F7/70433 , G03F7/70616 , G03F7/7065 , H01J37/3174
摘要： A method of manufacturing a semiconductor integrated circuit device, in which pattern on photomasks are transferred to a semiconductor wafer, and particularly techniques are employed for using control data, production condition data and inspection data in common in different production steps. A photomask is produced at a photomask production step by electron beam lithography. The same coordinate system of the pattern data used at the photomask production step are used in inspection/correction steps. The mask pattern of the photomask is transferred to the wafer by a step-and-repeat system. In this instance, the step movement is depending on the coordinate system of the pattern data. The wafer so exposed is then developed and etched to form repeats of reduced patterns on it, that is, this wafer pattern is composed of the reduced pattern produced by a step-and-repeat technique according to the coordinate system of the pattern data. The coordinate system of the pattern data is used to inspect the patterned wafers on a wafer tester. If a defect is found on a wafer, a detailed inspection of the corresponding photomask is carried out in a photomask inspection/correction step based on the results of the patterned wafer inspection step. Since the inspection result data comprises the coordinate system of the pattern data, it can be utilized as the data for the detailed inspection.
摘要翻译：制造将光掩模上的图案转印到半导体晶片的半导体集成电路器件的制造方法，特别是在不同的制造步骤中共同使用控制数据，生产条件数据和检查数据的技术。通过电子束光刻在光掩模制造步骤中制造光掩模。在光掩模生产步骤中使用的图案数据的相同坐标系用于检查/校正步骤。通过步进重复系统将光掩模的掩模图案转移到晶片。在这种情况下，步进运动取决于模式数据的坐标系。然后，如此曝光的晶片被显影和蚀刻以形成其上减少图案的重复，即，该晶片图案由根据图案数据的坐标系的步进重复技术产生的缩小图案组成。图案数据的坐标系用于检查晶片测试仪上的图案化晶片。如果在晶片上发现缺陷，则基于图案化晶片检查步骤的结果，在光掩模检查/校正步骤中进行相应的光掩模的详细检查。由于检查结果数据包括图案数据的坐标系，因此可以用作详细检查的数据。

73. 发明申请

WO1996028838A1 METHOD OF WRITING A PATTERN BY AN ELECTRON BEAM 审中-公开
标题翻译：用电子束写图案的方法
公开(公告)号：WO1996028838A1
公开(公告)日：1996-09-19
申请号：PCT/EP1995000892
申请日：1995-03-10
申请人： LEICA CAMBRIDGE, LTD. , ROSOLEN, Grahame, Craig
发明人： LEICA CAMBRIDGE, LTD.
IPC分类号： H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764
摘要： A method of writing a pattern or part of a pattern on a substrate by means of an electron beam comprises deflecting the beam to scan, in succession, sub-fields (1...27) of grid format within a field containing the pattern or pattern part. To reduce scanning delay between both vertically and horizontally adjacent sub-fields in the centre of the pattern, where finer pattern detail susceptible to time-related drift error may be located, the deflection of the beam is controlled to cause the pattern or pattern part to be written by progression through the sub-fields along a spiral path, the origin of which coincides with the location of the finer pattern detail.
摘要翻译：通过电子束将图案或图案的一部分写在衬底上的方法包括偏转光束以连续地扫描包含图案的场的网格格式的子场（1 ... 27）或图案部分。为了减少图案中心的垂直和水平相邻子场之间的扫描延迟，其中可以定位更易于与时间相关的漂移误差的更细图案细节，控制光束的偏转以使图案或图案部分通过沿着螺旋路径的子场进行写入，其原点与更细的图案细节的位置一致。

74. 发明申请

WO1993009561A1 ELECTRON BEAM EXPOSURE METHOD 审中-公开
标题翻译：电子束曝光方法
公开(公告)号：WO1993009561A1
公开(公告)日：1993-05-13
申请号：PCT/US1992000770
申请日：1992-01-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DICK, Gregory, James
IPC分类号： H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/31761 , H01J2237/31769
摘要： A more efficient method of macro placement and graying for electron beam (e-beam) lithography. The e-beam field is divided into smaller subfields. Repetitious shapes or collections of shapes which are repetitious are represented by macros. Some shapes span or are intersected by subfield boundaries. After the shapes are converted to fill rectangles and the fill rectangles are proximity corrected, the macro containing the proximity corrected fill rectangles is grayed and placed without being unnested. First, the Macro Organization Step, the macro's fill rectangles are sorted. Tall-narrow macros are sorted top to bottom then left to right, short-wide macros are sorted left to right then top to bottom. After the sort, chains of rectangles are created and a shadow is generated for the macro and for each chain. Next, the Macro Placement and Graying Step, a determination is made of whether and where macro graying will be required. The macro shadow is transformed into subfield coordinates and a determination is made of whether the transformed shadow intersects with (spans) a subfield boundary. If the macro's shadow touches more than one subfield (spans a subfield boundary), then the macro's chain shadows are examined to deternine if any chain spans the boundary. Graying is done on any spanning chain. Gray-spliced rectangles and single rectangles are placed in the pattern buffer. Partial macro read commands are placed in the pattern buffer for chains or partial chains resulting from gray-splicing.

75. 发明申请

WO1992012528A1 SURFACE ATOM MACHINING METHOD AND APPARATUS 审中-公开
标题翻译：表面加工方法和装置
公开(公告)号：WO1992012528A1
公开(公告)日：1992-07-23
申请号：PCT/JP1992000015
申请日：1992-01-10
申请人： HITACHI LIMITED , ICHIKAWA, Masakazu , HOSOKI, Shigeyuki , UCHIDA, Fumihiko , KATO, Shigeo , FUJISAKI, Yoshihisa , FUJISAKI, Sumiko , KIKUGAWA, Atsushi , IMURA, Ryo , AOI, Hajime , NAKAGAWA, Kiyokazu , MURAKAMI, Eiichi
发明人： HITACHI LIMITED
IPC分类号： H01J37/30
CPC分类号： G11B9/1436 , B82B3/00 , G01Q80/00 , G11B9/00 , G11B9/14 , G11B9/1418 , G11B9/1445 , G11B9/1463 , G11B9/1472 , G11B11/08 , G11B33/14 , H01J37/3056 , H01J37/3174 , H01J2237/31738 , H01J2237/31759 , Y10S977/856 , Y10S977/947
摘要： A method of finely machining solid surface and, particularly, a novel method and apparatus for machining the surfaces of solid elements on an atomic scale in order to prepare very fine elements and for recording data at ultra-high density. A probe (1) having a sharp end is disposed being opposed to the surface of a sample (4) that is to be machined, a voltage is applied between the probe and the sample to form an electric field large enough to field-vaporize atoms (5) constituting the sample or to field-vaporize atoms (6) constituting the probe. Atoms constituting the sample are field-vaporized and are split off the sample surface or atoms constituting the probe are field-vaporized and are adhered onto the sample surface, thereby to finely machine the sample surface on an atomic scale. Furthermore, a voltage is applied like pulses at any desired position on the sample surface to generate field-vaporization between the probe and the sample while observing the sample surface on an atomic scale based on a surface observation method using a scanning tunnel microscope, in order to remove atoms one by one from the sample surface by field-vaporization.

76. 发明申请

WO1987005438A1 MASKED ION BEAM LITHOGRAPHY SYSTEM AND METHOD 审中-公开
标题翻译：屏蔽离子光刻系统和方法
公开(公告)号：WO1987005438A1
公开(公告)日：1987-09-11
申请号：PCT/US1987000106
申请日：1987-01-27
申请人： HUGHES AIRCRAFT COMPANY
发明人： HUGHES AIRCRAFT COMPANY , McKENNA, Charles, M. , WOOD, James, E. , BARTELT, John, L. , OLNEY, Ross, D. , WARD, J., William , SLAYMAN, Charles, W.
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/055 , H01J2237/1516 , H01J2237/303 , H01J2237/31755 , H01J2237/31788
摘要： A masked ion beam lithography (MIBL) system and method which is considerably more compact and economical than prior ion implantation devices. An H+ ion beam is extracted from a source (4) in the form of an angularly expanding beam, and is transmitted through two lenses (14 and 16) that sequentially accelerate the ions to energies in the range of 200-300 keV. The first lens (14) focuses the beam so that it emerges from a crossover point with an amplified angular divergence at least three times the divergence of the initial beam, thereby considerably reducing the necessary column length. The second lens (16) collimates the beam so that it can be directed onto a mask (32) to expose resist on an underlying semiconductor substrate (36). A series of extraction electrodes (58 and 60) are used to provide an initial point source beam with a desired angular expansion, and a specially designed sector magnet (8) is positioned between the extraction mechanism (6) and the first lens (14) to remove particles heavier than H+ from the beam. Voltage ratios across the lenses (14 and 16) and extraction electrodes (58 and 60) can be varied in tandem, permitting control over the final beam energy by a simple voltage adjustment. The beam is aligned with the column axis and then steered into alignment with the mask channeling axis by a pair of octupole lenses (13 and 30).

77. 发明申请

WO1986004183A1 METHOD AND APPARATUS FOR SPOT SHAPING AND BLANKING A FOCUSED BEAM 审中-公开
标题翻译：点阵形状和聚光束的方法和装置
公开(公告)号：WO1986004183A1
公开(公告)日：1986-07-17
申请号：PCT/US1985002304
申请日：1985-11-25
申请人： HUGHES AIRCRAFT COMPANY
发明人： HUGHES AIRCRAFT COMPANY , KNAUER, Wolfgang
IPC分类号： H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01J2237/043 , H01J2237/31776
摘要： Charged particle source (14) delivers beam (20) which is collimated onto first aperture plate having first aperture (28). The beam passing therethrough is deflected by deflection plates (32, 34, 38 and 40) with respect to second aperture (46) in second aperture plate (44). The image (50) of the second aperture (46) is focused on the target plane (16) and the virtual image of the footprint (58) of the deflected beam is focused on the target plane (16). When these images overlap, a shaped beam (56) passes through. Scanning of the beam across the target plane by deflection plates (52 and 54) permits exposure of sharp-edged features (62) by positioning the image (60a) inside the margin (64) and then scanning the image (50b) thereacross to expose the sharp edge and thereupon picking up the image (60) so that they both scan across the feature to be exposed.

78. 发明申请

WO2017144398A1 PROCEDE DE LITHOGRAPHIE ELECTRONIQUE AVEC ECRANTAGE ELECTROSTATIQUE 审中-公开
标题翻译：电子光刻技术与静电划分
公开(公告)号：WO2017144398A1
公开(公告)日：2017-08-31
申请号：PCT/EP2017/053749
申请日：2017-02-20
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： LATTARD, Ludovic , QUEMERE, Patrick
IPC分类号： G03F7/20 , B82Y40/00 , G03F7/09 , G03F7/11 , H01J37/317
CPC分类号： G03F7/70433 , B82Y40/00 , G03F7/093 , G03F7/2059 , G03F7/2061 , H01J37/3174
摘要： Procédé de lithographie électronique comprenant les étapes suivantes : - implanter dans un substrat (S), ou dans une couche diélectrique (CD) déposée à la surface dudit substrat, des électrons suivant un premier motif; - déposer une résine (R) pour lithographie électronique à la surface dudit substrat ou de ladite couche diélectrique sacrificielle; et - exposer ladite résine au moyen d'un faisceau d'électrons (FL) suivant un second motif, puis la développer; lesdits premier et second motifs étant constitués par des motifs élémentaires, les motifs élémentaires dudit premier motif (MPI) entourant au moins partiellement les motifs élémentaires dudit second motif (ML).
摘要翻译：
处理程序; 包括以下步骤： - 植入基板（S）中或放置在电介质层（CD）中; 所述衬底的表面，第一图案中的电子; - 为电子平版印刷制作树脂（R）。所述衬底或所述牺牲介电层的表面; 并通过电子束（FL）以第二图案曝光所述树脂，然后显影; 所述第一和第二图案由基本图案构成，所述第一图案（MPI）的基本图案至少部分地围绕所述第二图案（ML）的基本图案，

79. 发明申请

WO2016171754A1 FINE ALIGNMENT SYSTEM FOR ELECTRON BEAM EXPOSURE SYSTEM 审中-公开
标题翻译：电子束曝光系统的精细对准系统
公开(公告)号：WO2016171754A1
公开(公告)日：2016-10-27
申请号：PCT/US2015/051031
申请日：2015-09-18
申请人： INTEL CORPORATION
发明人： BORODOVSKY, Yan A.
IPC分类号： H01L21/027
CPC分类号： H01J37/3045 , H01J37/045 , H01J37/09 , H01J37/20 , H01J37/244 , H01J37/3174 , H01J37/3177 , H01J2237/0453 , H01J2237/24475 , H01J2237/24578 , H01J2237/2817 , H01L21/0277 , H01L21/0337 , H01L21/31144 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54473
摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.
摘要翻译：描述适用于涉及补充电子束光刻（CEBL）的光刻设备和方法。在一个示例中，电子束工具的精细对准的方法包括在晶片的X方向对准特征上投射电子束列的多个孔的电子图像，同时沿着Y方向移动晶片。该方法还包括在投影期间检测时间分辨的反向散射电子（BSE）检测响应波形。该方法还包括通过计算BSE检测响应波形的导数来确定X方向对准特征的每个特征的每个边缘的X位置。该方法还包括在确定X方向对准特征的每个特征的每个边缘的X位置之后，调整电子束列与晶片的对准。

80. 发明申请

WO2016020264A1 METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS MODEL 审中-公开
标题翻译：用于确定IC制造工艺模型参数的方法
公开(公告)号：WO2016020264A1
公开(公告)日：2016-02-11
申请号：PCT/EP2015/067535
申请日：2015-07-30
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： H01J37/317 , G03F7/20 , G03F1/36
CPC分类号： G03F7/70441 , G03F1/36 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31796
摘要： According to the invention, an IC manufacturing model is disclosed, wherein input variables and an output variable are measured using a calibration set of patterns. The model can or not include a PSF. The output variable may be a dimensional bias between printed patterns and target patterns or simulated patterns. It can also be a Threshold To Meet Experiments (TTME). The input variables may be defined by a metric which uses kernel functions, preferably with a deformation function which includes a shift angle and a convolution procedure. A functional or associative relationship between the input variables and the output variable is defined. Preferably this definition includes normalization steps and interpolation steps. Advantageously, the interpolation step is of the kriging type. The invention achieves a much more accurate modeling of IC manufacturing, simulation or inspection processes.
摘要翻译：根据本发明，公开了一种IC制造模型，其中使用校准图案集来测量输入变量和输出变量。该模型可以或不包括PSF。输出变量可以是印刷图案和目标图案或模拟图案之间的尺寸偏差。它也可以是满足实验的门槛（TTME）。输入变量可以由使用内核函数的度量定义，优选地具有包括移位角和卷积过程的变形函数。定义输入变量和输出变量之间的函数关系或关联关系。优选地，该定义包括归一化步骤和内插步骤。有利地，内插步骤是克里金型。本发明实现了对IC制造，仿真或检验过程的更准确的建模。

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