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    • 34. 发明申请
    • BONDED ASSEMBLIES
    • 绑定装配
    • WO2005118291A2
    • 2005-12-15
    • PCT/US2005/013237
    • 2005-04-19
    • STARK, David, H.
    • STARK, David, H.
    • B32B31/00
    • H01L21/76251B32B37/00B32B2457/14H01L21/187H01L2224/83825H01L2224/8383H01L2924/01019H01L2924/09701
    • A process for manufacturing bonded assemblies comprises providing a first layer formed of a substrate material that is one of an electrical conductor, a semiconductor and an electrical insulator. A second layer of an electrically insulating material is formed on the top surface of the first layer, the second layer having a top surface. A third layer formed of a semiconductor material is disposed near the top surface of the second layer. The third layer is pressed against the top surface of the second layer with sufficient force to produce a predetermined contact pressure along a junction region between the second and third layers. The junction region is heated to produce a predetermined initial temperature in the junction region. The predetermined contact pressure and an elevated temperature are maintained in the junction region until a diffusion bond forms between the second and third layers.
    • 制造粘合组件的方法包括提供由电导体,半导体和电绝缘体之一的基板材料形成的第一层。 电绝缘材料的第二层形成在第一层的顶表面上,第二层具有顶表面。 由半导体材料形成的第三层设置在第二层的顶表面附近。 第三层以足够的力压在第二层的顶表面上,以沿着第二层和第三层之间的接合区产生预定的接触压力。 结区域被加热以在接合区域中产生预定的初始温度。 在接合区域中保持预定的接触压力和升高的温度,直到在第二层和第三层之间形成扩散粘结。
    • 35. 发明申请
    • TOOL FOR WAFER BONDING IN A VACUUM
    • 用于在真空中结合的工具
    • WO99060607A2
    • 1999-11-25
    • PCT/US1999/008867
    • 1999-04-22
    • B29C43/36B29C43/56B32B37/00H01L20060101H01L21/00H01L21/18H01L21/30H01L21/44H01L21/46H01L
    • B29C43/3642B29C43/32B29C43/56B29C2043/3266B29C2043/561B32B37/003B32B2309/68B32B2457/14H01L21/187H01L21/67092
    • A jig (200) for a fusion bonding process includes a sealable chamber (212) having a first station for a first wafer (110) and a second station for a second wafer (120). The wafers are initially separated from each other while a vacuum is created in the chamber. In one embodiment of the invention, movably mounted spacers (230) separate the wafers (280, 290) while the vacuum is formed. The spacers are then moved to allow the wafers to come into contact and form an initial bond (112). In another embodiment, wafers in the first and second stations are tilted away from each other so that gravity keeps the wafers separated while the vacuum is formed. After the vacuum is formed, the chamber is rotated so that gravity pushes the two wafers together. In either embodiment, a mechanical pushing system or vibrational energy can apply force to induce or improve the initial bond. The initial bond seals cavities (115) formed between the wafers.
    • 用于熔接工艺的夹具(200)包括具有用于第一晶片(110)的第一工位和第二晶片(120)的第二工位的可密封室(212)。 在室内产生真空时,晶片最初彼此分离。 在本发明的一个实施例中,可移动安装的间隔件(230)在形成真空的同时分离晶片(280,290)。 然后移动间隔物以允许晶片接触并形成初始结合(112)。 在另一个实施例中,第一和第二站中的晶片相互倾斜,使得重力在形成真空的同时使晶片分离。 在形成真空之后,旋转腔室,使得重力将两个晶片推到一起。 在任一实施例中,机械推动系统或振动能量可以施加力以诱导或改善初始粘结。 初始粘结密封形成在晶片之间的空腔(115)。