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    • 33. 发明申请
    • OUT-OF-PLANE SPACER DEFINED ELECTRODE
    • 平面外平面定义电极
    • WO2012142368A1
    • 2012-10-18
    • PCT/US2012/033455
    • 2012-04-13
    • ROBERT BOSCH GMBHGRAHAM, Andrew, B.YAMA, GaryO'BRIEN, Gary
    • GRAHAM, Andrew, B.YAMA, GaryO'BRIEN, Gary
    • B81C1/00
    • B81B3/0021B81B2207/095B81C1/00301
    • In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.
    • 在一个实施例中,形成平面外电极的方法包括在器件层的上表面上方提供氧化物层,在氧化物层的上表面上方提供第一覆盖层部分,蚀刻第一电极周界, 沟槽延伸穿过第一盖层部分并在氧化物层处停止,在第一电极周界限定沟槽内沉积第一材料部分,在第一材料部分上方沉积第二盖层部分,释放氧化物层的一部分的蒸气,沉积 在所述第二盖层部分上方的第三盖层部分,蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽,以及在所述第二电极周界限定沟槽内沉积第二材料部分, 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。
    • 35. 发明申请
    • MICROELECTROMECHANICAL DEVICES AND FABRICATION METHODS
    • 微电子机械装置和制造方法
    • WO2007021396A2
    • 2007-02-22
    • PCT/US2006/026531
    • 2006-07-07
    • ROBERT BOSCH GMBHYAMA, Gary
    • YAMA, Gary
    • B81C5/00
    • B81C1/00333
    • There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. An embodiment further includes a buried polysilicon layer and a "protective layer" deposited over the buried polysilicon layer to prevent possible erosion of, or damage to the buried polysilicon layer during processing steps. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
    • 这里描述和说明了许多发明。 在一个方面,本发明涉及MEMS器件以及制造或制造MEMS器件的技术,其具有在最终封装之前封装在室中的机械结构。 一个实施例还包括埋入式多晶硅层和“保护层” 沉积在掩埋的多晶硅层上方以防止在处理步骤期间可能侵蚀或损害掩埋的多晶硅层。 当沉积时,封装机械结构的材料包括以下属性中的一个或多个:低拉伸应力,良好的阶梯覆盖率,在进行后续处理时保持其完整性,不会显着和/或不利地影响机械结构的性能特性 腔室中的机械结构(如果在沉积期间涂覆有材料),和/或促进与高性能集成电路的集成。 在一个实施例中,封装机械结构的材料例如是硅(多晶硅,非晶硅或多孔硅,无论是掺杂的还是未掺杂的),碳化硅,硅 - 锗,锗或砷化镓。
    • 36. 发明申请
    • SUBSTRATE WITH MULTIPLE ENCAPSULATED PRESSURES
    • 带有多个封装压力的基板
    • WO2010107619A2
    • 2010-09-23
    • PCT/US2010/026685
    • 2010-03-09
    • ROBERT BOSCH GMBHCANDLER, Robert, N.YAMA, Gary
    • CANDLER, Robert, N.YAMA, Gary
    • B81B7/02
    • H01L23/3171B81B7/02B81B2201/0235B81B2201/0242B81C1/00293B81C2203/0136H01L2924/0002H01L2924/00
    • A method of forming a device with multiple encapsulated pressures is disclosed herein. In accordance with one embodiment of the present invention, there is provided a method of forming a device with multiple encapsulated pressures, including providing a substrate, forming a functional layer on top of a surface of the substrate, the functional layer including a first device portion at a first location, and a second device portion at a second location adjacent to the first location, encapsulating the functional layer, forming at least one diffusion resistant layer above the encapsulated functional layer at a location above the first location and not above the second location, modifying an environment adjacent the at least one diffusion resistant layer, and diffusing a gas into the second location as a result of the modified environment.
    • 本文公开了形成具有多个封装压力的装置的方法。 根据本发明的一个实施例,提供了一种形成具有多个封装压力的器件的方法,包括提供衬底,在衬底的表面的顶部上形成功能层,所述功能层包括第一器件部分 在第一位置处的第二设备部分和与第一位置相邻的第二位置处的第二设备部分,封装功能层,在第一位置上方并且不在第二位置之上的位置处在封装的功能层上方形成至少一个扩散阻挡层 改变邻近所述至少一个扩散阻挡层的环境,以及由于所述改进的环境而将气体扩散到所述第二位置。