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21. 发明申请

WO2009070013A1 A LITHOGRAPHIC APPARATUS, A PROJECTION SYSTEM AND A DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：平面设备，投影系统和设备制造方法
公开(公告)号：WO2009070013A1
公开(公告)日：2009-06-04
申请号：PCT/NL2008/050731
申请日：2008-11-18
申请人： ASML NETHERLANDS B.V. , VAN DE VIJVER, Yuri Johannes Gabriël , MOORS, Johannes Hubertus Josephina , VERSTEEG, Wendelin Johanna Maria , JONKERS, Peter Gerardus
发明人： VAN DE VIJVER, Yuri Johannes Gabriël , MOORS, Johannes Hubertus Josephina , VERSTEEG, Wendelin Johanna Maria , JONKERS, Peter Gerardus
IPC分类号： G03F7/20
CPC分类号： G03F7/70933 , G03F7/70841 , G03F7/70866 , G03F7/70883 , G03F7/70916
摘要： A lithographic apparatus (1) is disclosed that includes a projection system (7) configured to project a patterned radiation beam (9) onto a target portion of a substrate, a vacuum chamber (8) through which the patterned beam of radiation (9) is projected during use, and a purge (13, 16, 17) system configured to provide a purge gas flow in the chamber (8).
摘要翻译：公开了一种光刻设备（1），其包括投影系统（7），其配置成将图案化的辐射束（9）投影到基板的目标部分上;真空室（8），图案化的辐射束（9）并且被配置为在所述腔室（8）中提供净化气体流的吹扫（13,16,17）系统。

22. 发明申请

WO2009012919A1 METHOD FOR EXAMINING A WAFER WITH REGARD TO A CONTAMINATION LIMIT AND EUV PROJECTION EXPOSURE SYSTEM 审中-公开
标题翻译：用于检查污染物限制和EUV投影曝光系统的方法
公开(公告)号：WO2009012919A1
公开(公告)日：2009-01-29
申请号：PCT/EP2008/005807
申请日：2008-07-16
申请人： CARL ZEISS SMT AG , DORSEL, Andreas , SCHMIDT, Stefan
发明人： DORSEL, Andreas , SCHMIDT, Stefan
IPC分类号： G03F7/20
CPC分类号： G03F7/70916 , G03F7/70425 , G03F7/70608 , G03F7/7075 , G03F7/70808 , G03F7/70866 , G03F7/70925 , G03F7/70983
摘要： The invention relates to a method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1 ). The method preferably comprises the following steps: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. The invention further relates to an EUV projection exposure system (1 ) for carrying out the method. By rejecting wafers having an especially high contamination risk, the contamination of optical elements in the projection exposure system (1 ) on wafer exposure may be distinctly reduced.
摘要翻译：本发明涉及一种用于检查污染极限的至少一个晶片（13）的方法，其中抵抗（13a）去除污染物质的晶片（13）的抗蚀剂（13a）的污染电位为在将晶圆（13）暴露在EUV投影曝光系统（1）中之前，关于污染极限进行检查。该方法优选包括以下步骤：将晶片（13）和/或涂覆有与晶片（13）的抗蚀剂（13a）相同的抗蚀剂（13a））的测试盘布置在真空室（19）中，将真空室真空室（19），并且测量从抽真空真空室（19）中的晶片（13）脱气的污染物质的污染潜力，并且还将晶片（13）的污染电位与污染极限进行比较。本发明还涉及一种用于执行该方法的EUV投影曝光系统（1）。通过拒绝具有特别高的污染风险的晶片，可以明显减少投影曝光系统（1）中晶片曝光的光学元件的污染。

23. 发明申请

WO2008047818A8 NEAR-FIELD EXPOSURE APPARATUS AND NEAR-FIELD EXPOSURE METHOD 审中-公开
标题翻译：近场曝光装置和近场曝光方法
公开(公告)号：WO2008047818A8
公开(公告)日：2008-06-19
申请号：PCT/JP2007070220
申请日：2007-10-10
申请人： CANON KK , INAO YASUHISA , ITO TOSHIKI , MIZUTANI NATSUHIKO
发明人： INAO YASUHISA , ITO TOSHIKI , MIZUTANI NATSUHIKO
IPC分类号： G03F9/00
CPC分类号： G03F9/7038 , B82Y10/00 , G03F7/70325 , G03F7/7035 , G03F7/70866 , G03F9/7096 , Y10S430/167
摘要： A near-field exposure apparatus includes a near-field exposure mask (101), a mechanism configured to place a substrate (102) to be exposed, opposed to the near-field exposure mask, a mechanism (107) configured to perform relative alignment of the near-field exposure mask and 'the substrate to be exposed, a mechanism configured to closely contacting the near-field exposure mask and the substrate to be exposed, with each other, a mechanism (109) configured to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device (105) configured to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed, wherein the soft X- ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed.
摘要翻译：近场曝光装置包括：近场曝光掩模（101）;被配置为放置与近场曝光掩模相对的待曝光衬底（102）的机构;机构（107），被配置为执行相对对准（109），配置为将曝光光线投影到所述近场曝光掩模和所述待曝光基板的机构（109），所述机构配置为使所述近场曝光掩模和所述待曝光基板彼此紧密接触，近场曝光掩模以及软X射线照射装置（105），所述软X射线照射装置（105）被配置为去除在所述近场曝光掩模和所述待曝光基板中的至少一个中充入的静电，其中所述软X射线照射装置是设置在远离待曝光基板的近场曝光掩模的一侧。

24. 发明申请

WO2005109971A3 ATOMIC BEAM TO PROTECT A RETICLE 审中-公开
标题翻译：原子光束保护条款
公开(公告)号：WO2005109971A3
公开(公告)日：2006-08-03
申请号：PCT/US2005012129
申请日：2005-04-08
申请人： INTEL CORP , SILVERMAN PETER
发明人： SILVERMAN PETER
IPC分类号： H05H3/02 , G03F7/20 , H01L21/306
CPC分类号： H05H3/02 , G03F7/70866 , G03F7/70916
摘要： Embodiments of the invention provide a beam generator to produce an atomic beam that travels across a patterned surface of a reticle. The beam may interact with particles to prevent the particles from contaminating the reticle.
摘要翻译：本发明的实施例提供了一种用于产生横过掩模版图案化表面的原子束的光束发生器。光束可以与颗粒相互作用，以防止颗粒污染光罩。

25. 发明申请

WO2002063396A1 IN-SITU LITHOGRAPHY MASK CLEANING 审中-公开
标题翻译：现场光刻面罩清洁
公开(公告)号：WO2002063396A1
公开(公告)日：2002-08-15
申请号：PCT/US2002/000098
申请日：2002-01-04
申请人： ASML US, INC.
发明人： REID, Paul, B.
IPC分类号： G03F7/20
CPC分类号： G03F1/82 , G03F7/70866 , G03F7/70925
摘要： A method and system for in-situ cleaning of a reticle. Ionized gas is directed onto the reticle by a delivery device. The ionized gas neutralizes electro-static attraction between the reticle and particulate contaminants on the reticle and thereby dislodges them from the reticle. The ionized gas and particulate contaminants are then removed from the reticle by a vacuuming pump and transported from the system by a contaminant collector. As a result of the in-situ cleaning method and system, the overall risk of chip defects due to reticle particulate contaminants is reduced, and chip and water yield is improved.
摘要翻译：一种用于原位清洁光罩的方法和系统。电离气体通过输送装置被引导到掩模版上。电离气体中和掩模版之间的掩模版和微粒污染物之间的静电吸引，从而将它们从掩模版上移除。然后通过抽真空泵将离子化气体和微粒污染物从掩模版移除，并通过污染物收集器从系统输送。由于原位清洗方法和系统，由于掩模微粒污染物导致的芯片缺陷的总体风险降低，芯片和水的产量提高。

26. 发明申请

WO02008831A3 RETICLE STORAGE AND RETRIEVAL SYSTEM 审中-公开
标题翻译：真实存储和提取系统
公开(公告)号：WO02008831A3
公开(公告)日：2002-05-30
申请号：PCT/US2001/021376
申请日：2001-07-06
IPC分类号： F24F7/00 , F24F3/16 , F24F7/06 , G03F7/20 , H01L21/027 , H01L21/673 , H01L21/677
CPC分类号： G03F7/70741 , G03F7/7075 , G03F7/70866 , H01L21/67359 , H01L21/67769 , Y10S414/135
摘要： A storage and retrieval system (100) is provided for safely and efficiently storing reticles in a clean environment. An enclosed storage unit (110) is provided for storing the reticles, and other items such as wafers and the like, in an environment which minimizes the amount of contaminants and is suitable for use in a semiconductor fabrication clean room. A retrieval unit (120) is provided separate from the enclosed storage unit (110) for accessing and staging the reticles before they enter and leave the storage unit (110) for minimizing exposure of the storage unit (110). The storage unit (110) includes a movable storage matrix (200) having a plurality of bays (202) for storing the reticles. The movable storage matrix (200) is selectively moved or rotated by a drive mechanism (210) that is located external to the storage unit (110) so that the storage unit (110) is substantially free of contaminant generating components.
摘要翻译：本发明涉及一种用于在干净环境中安全且有效地存储标线片的存储和提取系统。本发明还涉及到一个封闭的存储单元，用于存储标线，以及其它物品，例如晶片和类似物，以最小化污染物的量和其适合在洁净室的用于制造半的环境 -conducteur。提取单元与封闭存储单元分离，以允许在进入和离开存储单元之前访问和放置掩模版，以最小化存储单元的暴露。说单位。存储单元包括具有多个标线存储匣的移动存储阵列。移动存储阵列通过位于存储单元外部的驱动机构选择性地移动或旋转，使得所述单元基本上没有污染物产生组件。

27. 发明申请

WO01079936A1 MITIGATION OF PHOTORESIST OUTGASSING IN VACUUM LITHOGRAPHY 审中-公开
标题翻译：静电放电在真空光刻中的减缓
公开(公告)号：WO01079936A1
公开(公告)日：2001-10-25
申请号：PCT/US2000/041637
申请日：2000-10-27
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/70866 , G03F7/70933
摘要： A windowless system and apparatus are provided that prevent outgases form contaminating the projection optics of an in-vacuum lithography system (100). The outgassing mitigation apparatus (124) comprises a chimney (304) that is substantially closed at one end, a duct fluidly coupled to the chimney, and a baffle (602) disposed within the chimney. The chimney of the outgassing mitigation apparatus is funnel shaped (402) at the end that is substantially closed. This end of the chimney has an opening that permits a beam or bundle of light to pass through the chimney. A rotating barrier (902), having at least one aperture for the passage of light, can be positioned near the chimney so that the rotating barrier substantially closes an open end of the chimney except when one of the apertures of the rotating barrier is passing by the chimney. This rotating barrier can be chilled by a refrigerator unit (906), which is radiantly coupled to a portion of the rotating barrier. A motor (904) is used to rotate the barrier. A light source synchronization module (910) is used to trigger a pulsed light source while the apertures of the rotating barrier are aligned with the chimney of the outgassing mitigation apparatus. Moreover, a barrier gas (911) system can be used to inject a barrier gas into the chimney.
摘要翻译：提供一种无窗系统和装置，其防止残留物污染真空光刻系统（100）的投影光学元件。除气缓解装置（124）包括在一端基本封闭的烟囱（304），与烟道流体耦合的管道以及设置在烟囱内的挡板（602）。排气缓解装置的烟囱在基本上封闭的端部处是漏斗形（402）。烟囱的这一端具有允许光束或光束通过烟囱的开口。具有至少一个用于光通过的孔的旋转屏障（902）可以被定位在烟囱附近，使得旋转阻挡件基本上封闭烟囱的开口端，除非旋转挡板中的一个孔经过烟囱该旋转屏障可以被冷却单元（906）冷却，冰箱单元辐射耦合到旋转屏障的一部分。电动机（904）用于旋转障碍物。光源同步模块（910）用于触发脉冲光源，同时旋转屏障的孔与排气缓解装置的烟囱对准。此外，可以使用阻挡气体（911）系统将阻挡气体注入烟囱。

28. 发明申请

WO00055891A1 EXPOSURE DEVICE, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：曝光装置，曝光方法和装置制造方法
公开(公告)号：WO00055891A1
公开(公告)日：2000-09-21
申请号：PCT/JP2000/000604
申请日：2000-02-04
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/70741 , G03F7/7075 , G03F7/70866 , G03F7/70933
摘要： Before a mask (R) is loaded in a mask chamber (15) filled with a specific gas containing impurities whose concentration is less than a first concentration (e.g., 1 PPb) and having a characteristic that the gas absorbs a little the exposure light, the mask (R) is temporally loaded in a preliminary chamber (R1), and the gas in the preliminary chamber (R1) is replaced with a specific gas containing oxygen whose concentration is one (e.g., 10 ppb) higher than the first concentration by means of a gas replacing mechanism (23, 24). Therefore when the mask (R) for exposure is loaded in the mask chamber thereafter, external impurities (including absorbing gases) hardly mix into the optical path inside the mask chamber. When a wafer (W) is replaced, gas replacement in the preliminary chamber (W1) is similarly carried out.
摘要翻译：在将掩模（R）装载在填充有浓度小于第一浓度（例如，1PPb）的杂质的特定气体的掩模室（15）中并且具有气体吸收少量曝光光的特性之前，将掩模（R）暂时装载在预备室（R1）中，并且预备室（R1）中的气体被含有比第一浓度高1（例如10ppb）的氧的特定气体置换，气体替换机构（23,24）的装置。因此，当用于曝光的掩模（R）此后装入掩模室时，外部杂质（包括吸收气体）几乎不混合到掩模室内的光路中。当更换晶片（W）时，类似地进行预备室（W1）中的气体置换。

29. 发明申请

WO99057607A1 PROTECTION OF LITHOGRAPHIC COMPONENTS FROM PARTICLE CONTAMINATION 审中-公开
标题翻译：保护颗粒污染物的成分组分
公开(公告)号：WO99057607A1
公开(公告)日：1999-11-11
申请号：PCT/US1999/006660
申请日：1999-03-26
IPC分类号： G03F1/14 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70866 , G03F7/70983
摘要： A system (100) that employs thermophoresis to protect lithographic surfaces from particle deposition and operates in an environment where the pressure is substantially constant and can be sub-atmospheric. The system (thermophoretic pellicle) comprises an enclosure (110) that surrounds a lithographic component (120) whose surface (125) is being protected from particle deposition. The enclosure is provided with means (130) for introducing a flow of gas (127) into the chamber and at least one aperture (135) that provides for access to the lithographic surface for the entry and exit of a beam of radiation, for example, and further controls gas flow into a surrounding low pressure environment such that a higher pressure is maintained within the enclosure and over the surface being protected. The lithographic component can be heated or, alternatively the walls (110) of the enclosure can be cooled to establish a temperature gradient between the surface of the lithographic component and the walls of the enclosure, thereby enabling the thermophoretic force that resists particle deposition.
摘要翻译：一种系统（100），其采用热泳法来保护光刻表面免受颗粒沉积并且在压力基本上恒定并且可以是低于大气压的环境中操作。该系统（热泳防护薄膜组件）包括围绕其表面（125）被保护以免颗粒沉积的光刻部件（120）的外壳（110）。外壳设置有用于将气体流（127）引入腔室的装置（130）和至少一个孔（135），其提供用于进入光刻表面以进入和离开辐射束，例如并且进一步控制气体进入周围的低压环境，使得在外壳内保持更高的压力并且在被保护的表面上。可以加热平版印刷部件，或者替代地，外壳的壁（110）可以被冷却以在光刻部件的表面和外壳的壁之间建立温度梯度，从而实现抵抗颗粒沉积的热解压力。

30. 发明申请

WO99027568A1 PROJECTION ALIGNER AND PROJECTION EXPOSURE METHOD 审中-公开
标题翻译：投影对准器和投影曝光方法
公开(公告)号：WO99027568A1
公开(公告)日：1999-06-03
申请号：PCT/JP1998/005258
申请日：1998-11-20
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/70916 , G03F7/2002 , G03F7/70241 , G03F7/70866 , G03F7/70925
摘要： Pattern transfer is performed with an exposure precision which is improved by the reduction of contamination such as adhesion of photosensitive agent, etc. to the optical member of a projection system, etc. After the optical member (OB) at a predetermined position is cleaned by a cleaner (8) while transfer is not performed, or while air is made to flow between a wafer (W) and the optical member (OB) by a contamination preventive device (98), a pattern is transferred to the wafer (W). Further, while transfer is not performed, the contamination of the optical member (OB) at a predetermined position is measured by a contamination measuring instrument (84) and, in accordance with the measurement result, transfer or cleaning or replacement of the optical member (OB) is performed.
摘要翻译：以曝光精度进行图案转印，曝光精度通过减少诸如感光剂等的粘附等污染物的影响而改进到投影系统的光学部件等。在预定位置的光学部件（OB）被清洁之后在不进行转印的同时清洁器（8），或者当通过防污染装置（98）使空气在晶片（W）和光学构件（OB）之间流动时，图案被转印到晶片（W）。此外，在不进行转印的情况下，通过污染测量仪器（84）测量光学部件（OB）在预定位置的污染，并且根据测量结果，转移或清洁或更换光学部件（ OB）。

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