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21. 发明申请

WO2007140421A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069996
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
IPC分类号： C23C16/452
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括辐射加热系统以加热包括至少一个光源的基板，其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

22. 发明申请

WO2010006279A2 CHAMBER COMPONENTS FOR CVD APPLICATIONS 审中-公开
标题翻译：用于CVD应用的腔室组件
公开(公告)号：WO2010006279A2
公开(公告)日：2010-01-14
申请号：PCT/US2009/050282
申请日：2009-07-10
申请人： APPLIED MATERIALS, INC. , HINCKLEY, Kimberly , ZHANG, Yizhen , HERNANDEZ, Manuel , BANG, Won , LUBOMIRSKY, Dmitry
发明人： HINCKLEY, Kimberly , ZHANG, Yizhen , HERNANDEZ, Manuel , BANG, Won , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/452 , C23C16/4481 , C23C16/45512 , C23C16/45591
摘要： Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.
摘要翻译：提供了与处理室一起使用的设备。在一个方面中，提供一种阻挡板，其包括具有第一厚度的内部的环形板，并且环形板具有包括中心部分的孔图案，第一图案部分同心地围绕中心部分设置并且包括第一多个孔具有第一数量的孔，同心地设置在第一图案部分周围的第二图案部分，以及包括具有比第一数量的孔大的第二数量的孔的第二多个孔，围绕第二图案部分同心布置的周边部分，以及外部部分，其包括设置在环形板的周边上的凸起同心部分。另一方面，提供了第二，第三和第四阻挡板。另外，还提供了用于处理室的混合装置和液体蒸发装置。

23. 发明申请

WO2009137272A2 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：WO2009137272A2
公开(公告)日：2009-11-12
申请号：PCT/US2009/041402
申请日：2009-04-22
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
IPC分类号： H05H1/34 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

24. 发明申请

WO2009061737A1 COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
标题翻译：计数平衡基板支持
公开(公告)号：WO2009061737A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/082365
申请日：2008-11-04
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
发明人： LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
IPC分类号： H01L21/00 , G03F7/20
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/68742 , H01L21/68792
摘要： A semiconductor processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure and a pumping system coupled to the chamber and adapted to remove material from trie processing chamber, and a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the chamber is rigidly or rotatably coupled to the substrate support shaft. A motor coupled to the bracket vertically translates the substrate support pedestal, shaft and bracket closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support, thereby reducing the deflection of the bracket and the substrate support.
摘要翻译：具有能够将内部室压力保持在低于环境大气压力的内部的半导体处理室以及耦合到该室并适于从三维处理室移除材料的泵送系统以及衬底支撑基座，其中衬底支撑基座刚性地联接通过延伸穿过处理室的壁的衬底支撑轴。位于室外的支架刚性或可旋转地联接到基板支撑轴。耦合到支架的马达将基板支撑基座，轴和支架垂直地平移到更靠近处理板。安装在托架的端部上的活塞提供与由内部室压力变化产生的倾斜力的反平衡力并引起支架和基板支撑件位置的偏转，从而减小支架的偏转和基板支撑。

25. 发明申请

WO2007149991A2 DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL 审中-公开
标题翻译：用于底盖的介电沉积和回填工艺
公开(公告)号：WO2007149991A2
公开(公告)日：2007-12-27
申请号：PCT/US2007/071804
申请日：2007-06-21
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , NEMANI, Srinivas, D. , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , NEMANI, Srinivas, D. , YIEH, Ellie
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
摘要翻译：描述了减少电介质层中的膜破裂的方法。所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

26. 发明申请

WO2013126466A1 HEAT TREATED CERAMIC SUBSTRATE HAVING CERAMIC COATING AND HEAT TREATMENT FOR COATED CERAMICS 审中-公开
标题翻译：具有陶瓷涂层的热处理陶瓷基材和涂层陶瓷的热处理
公开(公告)号：WO2013126466A1
公开(公告)日：2013-08-29
申请号：PCT/US2013/026963
申请日：2013-02-20
申请人： APPLIED MATERIALS, INC. , SUN, Jennifer, Y. , DUAN, Ren-guan , KANUNGO, Biraja, R. , LUBOMIRSKY, Dmitry
发明人： SUN, Jennifer, Y. , DUAN, Ren-guan , KANUNGO, Biraja, R. , LUBOMIRSKY, Dmitry
IPC分类号： C03C1/00 , C04B41/50 , C23C28/00
CPC分类号： C04B41/87 , C04B41/0072 , C04B41/009 , C04B41/5025 , C04B41/5032 , C04B41/5042 , C04B41/5045 , C04B41/52 , C04B41/80 , C04B41/89 , Y10T428/249988 , Y10T428/265 , C04B35/00 , C04B35/10 , C04B41/4556
摘要： A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000°C and about 1800°C at a ramping rate of about 0.1°C per minute to about 20°C per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking.
摘要翻译：提供具有陶瓷基底和具有初始孔隙率和初始裂纹量的陶瓷涂层的陶瓷制品。陶瓷制品以约0.1℃/分钟至约20℃/分钟的升温速率加热至约1000℃至约1800℃的温度范围。陶瓷制品在一个或多个温度范围内在高达约24小时的持续时间内进行热处理。然后将陶瓷制品以升高速度冷却，其中在热处理后，陶瓷涂层具有降低的孔隙率和减少的开裂量。

27. 发明申请

WO2012099681A2 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：WO2012099681A2
公开(公告)日：2012-07-26
申请号：PCT/US2011/066281
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
发明人： YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

28. 发明申请

WO2011143012A3 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
公开(公告)号：WO2011143012A3
公开(公告)日：2011-11-17
申请号：PCT/US2011/035014
申请日：2011-05-03
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
发明人： LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
IPC分类号： H01L21/02 , H01L21/683
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.

29. 发明申请

WO2011049811A2 POINT-OF-USE SILYLAMINE GENERATION 审中-公开
标题翻译：使用点SILALAMINE GENERATION
公开(公告)号：WO2011049811A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/052643
申请日：2010-10-14
申请人： APPLIED MATERIALS, INC. , KOVARSKY, Nicolay Y. , LUBOMIRSKY, Dmitry
发明人： KOVARSKY, Nicolay Y. , LUBOMIRSKY, Dmitry
IPC分类号： C23C16/22 , C23C16/30 , H01L21/205 , C23C16/44
CPC分类号： H01L21/02274 , C01B21/087 , C23C16/4488 , H01L21/0217 , H01L21/02222
摘要： The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and monosilylamine (MSA). Mixtures involving two or more silylamines can change composition (e.g. proportion of DSA to TSA) over time. Producing silylamines near a point-of-use limits changing composition, reduces handling of unstable gases and reduces cost of silylamine-consuming processes.
摘要翻译：描述了在使用点附近生产和输送含有一种或多种甲硅烷胺的反应前体。甲硅烷胺可以包括三甲硅烷胺（TSA），但也可以包含二硅胺（DSA）和单硅烷胺（MSA）。涉及两种或更多种甲硅烷胺的混合物可随时间改变组成（例如DSA与TSA的比例）。在使用点附近生产甲硅烷胺限制了组成的变化，减少了对不稳定气体的处理并降低了甲硅烷胺消耗过程的成本。

30. 发明申请

WO2010036657A2 METHODS FOR FABRICATING FACEPLATE OF SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：制造半导体装置面板的方法
公开(公告)号：WO2010036657A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057882
申请日：2009-09-22
申请人： APPLIED MATERIALS, INC. , TAN, Tien, Fak , TSUEI, Lun , CHEN, Shaofeng , RABINOVICH, Felix , LUBOMIRSKY, Dmitry , HINCKLEY, Kimberly
发明人： TAN, Tien, Fak , TSUEI, Lun , CHEN, Shaofeng , RABINOVICH, Felix , LUBOMIRSKY, Dmitry , HINCKLEY, Kimberly
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , H01J37/3244 , Y10T29/49401
摘要： A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.
摘要翻译：提供了一种用于制造半导体装置的面板的方法。该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。该工具用于在面板内形成孔。面板的孔的第一气体参数由设备测量以确定面板的孔的测量的第一气体参数是否在预定的规格内。

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