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1. 发明申请

WO2012099681A2 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：WO2012099681A2
公开(公告)日：2012-07-26
申请号：PCT/US2011/066281
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
发明人： YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

2. 发明申请

WO2011009002A3 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
公开(公告)号：WO2011009002A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/042194
申请日：2010-07-15
申请人： APPLIED MATERIALS, INC. , CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
发明人： CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
IPC分类号： H01L21/205
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

3. 发明申请

WO2011143012A3 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
公开(公告)号：WO2011143012A3
公开(公告)日：2011-11-17
申请号：PCT/US2011/035014
申请日：2011-05-03
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
发明人： LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
IPC分类号： H01L21/02 , H01L21/683
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.

4. 发明申请

WO2012048044A3 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
公开(公告)号：WO2012048044A3
公开(公告)日：2012-04-12
申请号：PCT/US2011/054984
申请日：2011-10-05
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , PINSON II, Jay, D. , FLOYD, Kirby, H. , KHAN, Adib , VENKATARAMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , PINSON II, Jay, D. , FLOYD, Kirby, H. , KHAN, Adib , VENKATARAMAN, Shankar
IPC分类号： H01L21/3105 , H01L21/68
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.

5. 发明申请

WO2011159905A2 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040713
申请日：2011-06-16
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , PINSON II, Jay D. , FLOYD, Kirby H. , KHAN, Adib , VENKATARAMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , PINSON II, Jay D. , FLOYD, Kirby H. , KHAN, Adib , VENKATARAMAN, Shankar
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

6. 发明申请

WO2011090626A2 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮/氢比生产自由基的介电膜生长
公开(公告)号：WO2011090626A2
公开(公告)日：2011-07-28
申请号：PCT/US2010/060852
申请日：2010-12-16
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述了形成电介质层的方法。该方法可以包括将含硅前体与自由基氮前体混合并在衬底上沉积电介质层的步骤。通过使氢气（H 2）和氮气（N 2）流入等离子体中以便调节氮/氢比率，在远程等离子体中形成自由基氮前体。介电层最初是含硅和氮的层，其可通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

7. 发明申请

WO2011049800A2 STRESS MANAGEMENT FOR TENSILE FILMS 审中-公开
标题翻译：拉伸膜的应力管理
公开(公告)号：WO2011049800A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/052548
申请日：2010-10-13
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , PATEL, Anjana M. , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , PATEL, Anjana M. , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了形成具有降低的开裂倾向的间隙填充氧化硅层。沉积涉及形成可流动的含硅层，其有助于填充沟槽。在高衬底温度下的后续处理导致在电介质膜中比根据现有技术中的方法形成的可流动膜更少的开裂。描述了在形成间隙填充硅氧化物层之前沉积的压缩衬里层，并降低了随后沉积的膜开裂的趋势。在可流动的含硅层之后沉积的压缩覆盖层也被确定为减少开裂。压缩衬层和压缩覆盖层可单独使用或组合使用以减少并经常消除裂纹。另外已经确定了公开的实施例中的压缩覆盖层，以使得氮化硅的下层能够转变成氧化硅层。

8. 发明申请

WO2005071740A2 LIMITED THERMAL BUDGET FORMATION OF PMD LAYERS 审中-公开
标题翻译：有限公司预计形成PMD层
公开(公告)号：WO2005071740A2
公开(公告)日：2005-08-04
申请号：PCT/US2005/000728
申请日：2005-01-10
申请人： APPLIED MATERIALS, INC. , YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
发明人： YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
IPC分类号： H01L21/768
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap which is defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate, providing a flow of an oxidizing processing gas to the chamber, and providing a flow of a phosphorous-containing processing gas to the chamber. The method also includes depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas, the phosphorous-containing processing gas, and the oxidizing processing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) and maintaining the temperature of the substrate below about 500°C throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500°C throughout deposition of the bulk layer.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底的腔室，提供氧化处理气体到腔室的流动，并提供流动的含磷处理气体。该方法还包括通过使含硅处理气体，含磷处理气体和氧化处理气体之间的反应在间隙中沉积作为基本保形层的P掺杂氧化硅膜的第一部分。沉积保形层包括随着时间的推移，在沉积保形层的过程中（含硅处理气体加上含磷处理气体）：氧化处理气体）和将基板的温度保持在约500℃以下。该方法还包括沉积作为体层的P掺杂氧化硅膜的第二部分。沉积薄膜的第二部分包括在沉积本体层期间保持（含硅处理气体加含磷处理气体）:(氧化处理气体）的比例基本上恒定，并将基板的温度维持在约500℃以下在整个沉积层中。

9. 发明申请

WO2011017598A2 FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES 审中-公开
标题翻译：使用非碳可流动CVD工艺形成氧化硅
公开(公告)号：WO2011017598A2
公开(公告)日：2011-02-10
申请号：PCT/US2010/044680
申请日：2010-08-06
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/762 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/31608 , H01L21/3185 , H01L21/76837
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将不含碳的含硅和氮的前体与自由基前体混合，以及在衬底上沉积含硅和氮的层。然后将含硅和氮的层转化为氧化硅层。

10. 发明申请

WO2010080216A3 PRECURSOR ADDITION TO SILICON OXIDE CVD FOR IMPROVED LOW TEMPERATURE GAPFILL 审中-公开
公开(公告)号：WO2010080216A3
公开(公告)日：2010-07-15
申请号：PCT/US2009/065181
申请日：2009-11-19
申请人： APPLIED MATERIALS, INC. , VENKATARAMAN, Shankar , HAMANA, Hiroshi , HERNANDEZ, Manuel, A. , INGLE, Nitin, K. , GEE, Paul, Edward
发明人： VENKATARAMAN, Shankar , HAMANA, Hiroshi , HERNANDEZ, Manuel, A.
IPC分类号： H01L21/205 , H01L21/31 , H01L21/76
摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

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