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21. 发明申请

WO2008079684A3 ELECTRON BLOCKING LAYERS FOR ELECTRONIC DEVICES 审中-公开
标题翻译：电子设备的电子封装层
公开(公告)号：WO2008079684A3
公开(公告)日：2008-09-04
申请号：PCT/US2007087167
申请日：2007-12-12
申请人： NANOSYS INC , CHEN JIAN , DUAN XIANGFENG , CRUDEN KAREN , LIU CHAO , NALLABOLU MADHURI L , RANGANATHAN SRIKANTH , LEON FRANCISCO , PARCE J WALLACE
发明人： CHEN JIAN , DUAN XIANGFENG , CRUDEN KAREN , LIU CHAO , NALLABOLU MADHURI L , RANGANATHAN SRIKANTH , LEON FRANCISCO , PARCE J WALLACE
IPC分类号： H01L21/44
CPC分类号： H01L29/513 , B82Y10/00 , G11C16/10 , H01L21/28273 , H01L21/28282 , H01L29/517
摘要： Methods and apparatus for electronic devices such as non-volatile memory devices are described. The momory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control electric includes a combination of high-k dielectric meterials such as aluminium oxide (A1 2 O 3 ), Hafnium oxide (HfO 2 ), and/or hybrid films of Hafnium aluminium oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g, two, three or four bit) operation.
摘要翻译：描述了诸如非易失性存储器件的电子设备的方法和装置。器件包括多层控制电介质，例如双层或三层。多层控制电包括高k介电体系的组合，例如氧化铝（Al 2 O 3 O 3），氧化铪（HfO 2 O 3） SUB>）和/或铪铝氧化物的混合膜。多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器编程/擦除窗口，改进的可靠性和稳定性，具有单或多（例如二，三或四位）操作的可行性。

22. 发明申请

WO2008013780A2 NANOCRYSTAL DOPED MATRIXES 审中-公开
公开(公告)号：WO2008013780A2
公开(公告)日：2008-01-31
申请号：PCT/US2007016584
申请日：2007-07-23
申请人： NANOSYS INC , PARCE J WALLACE , BERNATIS PAUL , DUBROW ROBERT , FREEMAN WILLIAM P , GAMORAS JOEL , KAN SHIHAI , MEISEL ANDREAS , QIAN BAIXIN , WHITEFORD JEFFERY A , ZIEBARTH JONATHAN
发明人： PARCE J WALLACE , BERNATIS PAUL , DUBROW ROBERT , FREEMAN WILLIAM P , GAMORAS JOEL , KAN SHIHAI , MEISEL ANDREAS , QIAN BAIXIN , WHITEFORD JEFFERY A , ZIEBARTH JONATHAN
IPC分类号： C09K11/02 , H01L33/50
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783
摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II- VI shells. A variety of novel nanostructure ligands are described.
摘要翻译：提供掺杂半导体纳米晶体的矩阵。在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。本发明的基质也可用于折射率匹配应用。在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。还提供了用于生产包含半导体纳米晶体的基质的方法。还描述了具有高量子效率，小尺寸和/或窄尺寸分布的纳米结构，以及制备具有II-VI族壳的磷化铟纳米结构和核 - 壳纳米结构的方法。描述了各种新型纳米结构配体。

23. 发明申请

WO2007078304A2 MEDICAL DEVICE APPLICATIONS OF NANOSTRUCTURED SURFACES 审中-公开
标题翻译：纳米结构表面的医疗器械应用
公开(公告)号：WO2007078304A2
公开(公告)日：2007-07-12
申请号：PCT/US2006/010928
申请日：2006-03-23
申请人： NANOSYS, INC. , DUBROW, Robert, S. , BOCK, Lawrence, A. , DANIELS, R., Hugh , HARDEV, Veeral, D. , NIU, Chunming , SAHI, Vijendra
发明人： DUBROW, Robert, S. , BOCK, Lawrence, A. , DANIELS, R., Hugh , HARDEV, Veeral, D. , NIU, Chunming , SAHI, Vijendra
IPC分类号： D04H3/00
CPC分类号： A61L31/10 , A61F13/02 , A61L27/34 , A61L2400/12 , A61L2420/04 , A61N1/05 , B82Y30/00 , Y10S977/762 , Y10S977/764 , Y10S977/773 , Y10S977/811 , Y10S977/813 , Y10S977/90 , Y10S977/904 , Y10S977/906 , Y10T428/12111 , Y10T428/249924 , Y10T428/29
摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.
摘要翻译：本发明提供了新颖的纳米纤维增强表面积基材和包括用于各种医疗装置的这种基底的结构，以及用于这种基底和医疗装置的方法和用途。在一个具体实施例中，公开了用于增强医疗装置植入物表面上的细胞功能的方法，其通常包括提供包括在其上的多个纳米纤维（例如，纳米线）的医疗装置植入物，并将医疗装置植入物暴露于诸如成骨细胞。

24. 发明申请

WO2006068654A3 SYSTEMS AND METHODS FOR NANOWIRE GROWTH AND MANUFACTURING 审中-公开
标题翻译：用于纳米生长和制造的系统和方法
公开(公告)号：WO2006068654A3
公开(公告)日：2007-06-14
申请号：PCT/US2005014038
申请日：2005-04-22
申请人： NANOSYS INC , NIU CHUNMING , GOLDMAN JAY , DUAN XIANGFENG , SAHI VIJENDRA
发明人： NIU CHUNMING , GOLDMAN JAY , DUAN XIANGFENG , SAHI VIJENDRA
IPC分类号： B32B9/00 , C01B31/02 , H01L21/20 , H01L21/322 , H01L23/48
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B32/18 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to compositions of matter, systems and methods to manufacture nanowires. In an embodiment, a buffer layer (350) is placed on a nanowire growth substrate (345) and catalytic nanoparticles (355) are added to from a catalytic-coated nanowire growth substrate (335). Methods to develop and use this catalytic-coated nanowire growth substrate (335) are disclosed. In a further aspect of the invention, in an embodiment a nanowire growth system using a foil roller to manufacture nanowires is provided.
摘要翻译：本发明涉及制备纳米线的物质，体系和方法的组合物。在一个实施方案中，将缓冲层（350）放置在纳米线生长衬底（345）上，并且从催化涂覆的纳米线生长衬底（335）中加入催化纳米颗粒（355）。公开了开发和使用该催化涂覆的纳米线生长衬底（335）的方法。在本发明的另一方面，在一个实施方案中，提供了使用箔辊制造纳米线的纳米线生长系统。

25. 发明申请

WO2007038164A2 METHODS FOR NANOSTRUCTURE DOPING 审中-公开
标题翻译：用于纳米结构的方法
公开(公告)号：WO2007038164A2
公开(公告)日：2007-04-05
申请号：PCT/US2006036738
申请日：2006-09-21
申请人： NANOSYS INC , PAN YAOLING , CHEN JIAN , LEON FRANCISCO , MOSTARSHED SHAHRIAR , ROMANO LINDA T , SAHI VIJENDRA , STUMBO DAVID P
发明人： PAN YAOLING , CHEN JIAN , LEON FRANCISCO , MOSTARSHED SHAHRIAR , ROMANO LINDA T , SAHI VIJENDRA , STUMBO DAVID P
IPC分类号： H01L29/06 , H01L21/225
CPC分类号： H01L29/0665 , B81C1/00698 , B81C2201/0173 , B82Y10/00 , H01L21/2256 , H01L21/268 , H01L29/0673
摘要： Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure.
摘要翻译：公开了掺杂纳米结构的方法，例如纳米线。该方法提供了改进现有的纳米结构掺杂方法的各种方法。实施例包括在后纳米结构合成掺杂期间使用牺牲层来促进纳米结构内的均匀掺杂剂分布。在另一个实施例中，当使用高能离子注入时，使用高温环境退火纳米结构损伤。在另一个实施方案中，使用快速热退火来将掺杂剂从纳米结构上的掺杂剂层驱动到纳米结构中。在另一个实施例中，提供了一种在塑料衬底上掺杂纳米线的方法，其包括在塑料衬底上沉积电介质叠层以保护塑料衬底免于在掺杂过程期间损坏。还提供了一种实施方案，其包括在合成纳米结构中在不同时间选择性地使用高浓度的掺杂剂材料，以在所得纳米结构内实现新的晶体结构。

26. 发明申请

WO2007030126A2 METHOD, SYSTEM, AND APPARATUS FOR GATING CONFIGURATIONS AND IMPROVED CONTACTS IN NANOWIRE-BASED ELECTRONIC DEVICES 审中-公开
标题翻译：用于在纳米级电子设备中进行配置和改进联系的方法，系统和设备
公开(公告)号：WO2007030126A2
公开(公告)日：2007-03-15
申请号：PCT/US2005/037237
申请日：2005-10-14
申请人： NANOSYS, INC. , MOSTARSHED, Shahriar , CHEN, Jian , LEON, Francisco , PAN, Yaoling , ROMANO, Linda T.
发明人： MOSTARSHED, Shahriar , CHEN, Jian , LEON, Francisco , PAN, Yaoling , ROMANO, Linda T.
IPC分类号： H01L29/76
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42384 , H01L29/42392 , H01L29/775 , H01L29/785 , H01L29/78645 , H01L29/78681 , H01L29/7869 , Y10S977/762 , Y10S977/932 , Y10S977/938
摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.
摘要翻译：描述了具有改进的门结构的电子设备的方法，系统和装置。电子装置包括至少一个纳米线。栅极接触沿至少一个纳米线的长度的至少一部分定位。介电材料层在栅极接触和至少一个纳米线之间。源极触点和漏极触点与至少一个纳米线接触。源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。环形第一栅极区域沿着纳米线长度的一部分包围纳米线。第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

27. 发明申请

WO2006130359A3 LIGHT EMITTING NANOWIRES FOR MACROELECTRONICS 审中-公开
公开(公告)号：WO2006130359A3
公开(公告)日：2006-12-07
申请号：PCT/US2006/019402
申请日：2006-05-18
申请人： NANOSYS, INC. , NIU, Chunming , EMPEDOCLES, Stephen, A. , ZAZISKI, David, J.
发明人： NIU, Chunming , EMPEDOCLES, Stephen, A. , ZAZISKI, David, J.
IPC分类号： H01L21/00
摘要： Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once the densely oriented nanowire thin film is created, a metal-insulator nanowire structure is fabricated by layering a metal on the nanowire thin film. Ohmic contacts are then created on the metal-insulator nanowire structure for operation. Application of electrical signals to the ohmic contacts causes light emission from the metal-insulator nanowire structure. Light emitting devices having densely oriented nanowire thin films are also disclosed. In an embodiment the light emitting device is, for example, a LED. The nanowires can include, for example, GaN, InP, CdS nanowires or a combination of these and other nanowires. Different colors of light can be produced based on the type of nanowire, the combination of nanowire types and the physical characteristics of the nanowires.

28. 发明申请

WO2006130359A2 LIGHT EMITTING NANOWIRES FOR MACROELECTRONICS 审中-公开
标题翻译：用于大电子的发光纳米微粒
公开(公告)号：WO2006130359A2
公开(公告)日：2006-12-07
申请号：PCT/US2006019402
申请日：2006-05-18
申请人： NANOSYS INC , NIU CHUNMING , EMPEDOCLES STEPHEN A , ZAZISKI DAVID J
发明人： NIU CHUNMING , EMPEDOCLES STEPHEN A , ZAZISKI DAVID J
IPC分类号： H01L33/20 , H01L33/24
CPC分类号： H01L33/20 , H01L33/24 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once the densely oriented nanowire thin film is created, a metal-insulator nanowire structure is fabricated by layering a metal on the nanowire thin film. Ohmic contacts are then created on the metal-insulator nanowire structure for operation. Application of electrical signals to the ohmic contacts causes light emission from the metal-insulator nanowire structure. Light emitting devices having densely oriented nanowire thin films are also disclosed. In an embodiment the light emitting device is, for example, a LED. The nanowires can include, for example, GaN, InP, CdS nanowires or a combination of these and other nanowires. Different colors of light can be produced based on the type of nanowire, the combination of nanowire types and the physical characteristics of the nanowires.
摘要翻译：公开了使用密集定向的纳米线制造宏观电子发光器件的系统和方法。在一个实施例中，合成核心纳米线，并在纳米线周围制造绝缘壳。然后将纳米线核 - 壳结构沉积在基底上以产生致密定向的纳米线薄膜。一旦产生致密取向的纳米线薄膜，就通过在纳米线薄膜上分层金属来制造金属 - 绝缘体纳米线结构。然后在金属 - 绝缘体纳米线结构上形成欧姆接触用于操作。将电信号施加到欧姆接触引起来自金属 - 绝缘体纳米线结构的光发射。还公开了具有致密取向的纳米线薄膜的发光器件。在一个实施例中，发光器件例如是LED。纳米线可以包括例如GaN，InP，CdS纳米线或这些和其它纳米线的组合。可以基于纳米线的类型，纳米线类型和纳米线的物理特性的组合来产生不同颜色的光。

29. 发明申请

WO2006078281A3 SYSTEMS AND METHODS FOR HARVESTING AND INTEGRATING NANOWIRES 审中-公开
公开(公告)号：WO2006078281A3
公开(公告)日：2006-07-27
申请号：PCT/US2005/014922
申请日：2005-04-29
申请人： NANOSYS, INC. , ROMANO, Linda, T. , CHEN, Jian , DUAN, Xiangfeng , DUBROW, Robert, S. , EMPEDOCLES, Stephen, A. , GOLDMAN, Jay, L. , HAMILTON, James, M. , HEALD, David, L. , LEMMI, Francesco , NIU, Chunming , PAN, Yaoling , PONTIS, George , SAHI, Vijendra , SCHER, Erik, C. , STUMBO, David, P. , WHITEFORD, Jeffery, A.
发明人： ROMANO, Linda, T. , CHEN, Jian , DUAN, Xiangfeng , DUBROW, Robert, S. , EMPEDOCLES, Stephen, A. , GOLDMAN, Jay, L. , HAMILTON, James, M. , HEALD, David, L. , LEMMI, Francesco , NIU, Chunming , PAN, Yaoling , PONTIS, George , SAHI, Vijendra , SCHER, Erik, C. , STUMBO, David, P. , WHITEFORD, Jeffery, A.
IPC分类号： H01L21/20 , H01L29/06 , H01L21/335
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

30. 发明申请

WO2006016914A2 METHODS FOR NANOWIRE GROWTH 审中-公开
标题翻译：纳米生长方法
公开(公告)号：WO2006016914A2
公开(公告)日：2006-02-16
申请号：PCT/US2005/014925
申请日：2005-04-29
申请人： NANOSYS, INC. , HAMILTON, James M. , ROMANO, Linda T.
发明人： HAMILTON, James M. , ROMANO, Linda T.
IPC分类号： H01L21/20
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to produce, process, and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires. A method is also provided in which two or more thin films of different materials are overlayed over a substrate, selectively etching the first underlying thin film to create a plurality of islands of the second thin film that mask portions of the first thin film and expose other portions and growing nanowires on the first thin film. Additional methods for producing nanowires are provided.
摘要翻译：本发明涉及生产，加工和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供一种纳米线的制造方法，其包括在基板上提供具有变化厚度的催化剂材料的薄膜，加热基板和薄膜，使得薄膜在相对较薄的区域分离并将半导体蒸镀到底物产生纳米线。还提供了一种方法，其中两个或更多个不同材料的薄膜覆盖在衬底上，选择性地蚀刻第一下面的薄膜以产生第二薄膜的多个岛，其掩盖第一薄膜的部分并暴露其它部分和在第一薄膜上生长纳米线。提供了生产纳米线的其他方法。

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