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11. 发明申请

WO2010015301A8 PASSIVATION OF ETCHED SEMICONDUCTOR STRUCTURES 审中-公开
公开(公告)号：WO2010015301A8
公开(公告)日：2010-02-11
申请号：PCT/EP2009/004791
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON ISULATOR TECHNOLOGIES , FAURE, Bruce , GUENARD, Pascal
发明人： FAURE, Bruce , GUENARD, Pascal
IPC分类号： H01L21/762 , H01L21/324 , H01L21/20
摘要： The present invention relates to a method for passivation of a semiconductor structure, comprising the steps providing at least one first material layer; forming at least one second material layer that is to be patterned above the first material layer; forming a diffusion barrier layer between the at least one second material layer and the at least one first material layer thereby forming a multilayer stack and patterning, in particular, etching, the at least one second material layer down to but not completely through the diffusion barrier layer and without exposing portions of the at least one first material layer such that diffusion of material of the at least one first material layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented. The invention also relates to a method for passivation of a semiconductor structure, comprising the steps providing a multilayer stack comprising at least one buried layer formed below a second material layer; patterning, in particular, etching, the surface of the multilayer stack through the second material layer thereby exposing portions of the at least one buried layer and depositing a diffusion barrier layer at least on the exposed portions of the at least one buried layer such that diffusion of material of the at least one buried layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented.

12. 发明申请

WO2006000691A1 SUPPORT D'EPITAXIE HYBRIDE ET SON PROCEDE DE FABRICATION 审中-公开
标题翻译：混合外延支持及其制作方法
公开(公告)号：WO2006000691A1
公开(公告)日：2006-01-05
申请号：PCT/FR2005/001353
申请日：2005-06-02
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , LAHRECHE, Hacene
发明人： FAURE, Bruce , LAHRECHE, Hacene
IPC分类号： H01L21/762
CPC分类号： C30B33/00 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/76254 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Procédé de réalisation d'un support d'épitaxie, comportant la formation, dans un premier substrat (2) de carbure de silicium (SiC) ou de nitrure de gallium (GaN) monocristallin conducteur, d'une couche (14) de carbure de silicium monocristallin isolant ou de nitrure de gallium monocristallin isolant. Le procédé comprend en outre le report de cette couche de carbure de silicium ou de nitrure de gallium monocristallin sur un deuxième substrat (4) en matériau céramique polycristallin ayant une conductivité thermique supérieure ou égale à 1,5 W.cm -1 .K -1 . Ce procédé permet de réaliser des composants électroniques économiques et performants, notamment pour des applications haute-fréquences de puissance.
摘要翻译：本发明涉及一种用于制造外延支撑件的方法，包括在第一单晶导电碳化硅（SiC）或单晶氮化镓（GaN）衬底，绝缘单晶碳化硅或绝缘单晶氮化镓层中形成。该方法还包括将所述单晶碳化硅或氮化镓层转移到由多晶陶瓷材料制成的第二衬底（4）上，所述多晶陶瓷材料具有不小于1.5W / cm 2的热导率。 -1 。该方法能够制造经济和有效的电子部件，特别是用于电力高频应用。

13. 发明申请

WO2007110515A2 PROCEDE DE DETACHEMENT D'UN FILM MINCE PAR FUSION DE PRECIPITES 审中-公开
标题翻译：通过熔化沉淀法分离薄膜的方法
公开(公告)号：WO2007110515A2
公开(公告)日：2007-10-04
申请号：PCT/FR2007/000534
申请日：2007-03-28
申请人： COMMISARIAT A L'ENERGIE ATOMIQUE (CEA) , S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , TAUZIN, Aurélie , FAURE, Bruce , GARNIER, Arnaud
发明人： TAUZIN, Aurélie , FAURE, Bruce , GARNIER, Arnaud
CPC分类号： H01L21/76254
摘要： Un procédé de fabrication d'un film mince à partir d'un substrat comporte les étapes suivantes : (1) implantation dans le substrat par exemple en silicium, d'ions d'une espèce non gazeuse, par exemple du gallium, cette espèce et les conditions d'implantation étant choisies, en fonction du matériau du substrat, en sorte de permettre la formation de précipités confinés en profondeur, répartis au sein d'une couche, ces précipités étant en une phase solide ayant une température de fusion inférieure à celle du substrat; (2) éventuelle mise en contact intime de cette face du substrat avec un raidisseur ; et (3) détachement d'un film mince par rupture du substrat au niveau de la couche de précipités par l'application d'une sollicitation de détachement, mécanique et/ou chimique, dans des conditions où les précipités sont en phase liquide.
摘要翻译：从衬底制造薄膜的方法包括以下步骤：（1）将诸如非气态物质的离子（例如镓）注入例如由硅制成的衬底中，注入条件并选择该物质根据基材的材料，使得形成一定范围的析出物，分布在一层内，这些沉淀物由熔点低于基底的固相制成; （2）衬底的该表面与加强件的任意的紧密接触; 和（3）通过在沉淀物处于液相的条件下施加机械和/或化学分解应力，通过在沉淀层处破碎基底来分离薄膜。

14. 发明申请

WO2007071771A1 METHOD FOR MAKING A COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE ACCORDING TO SAID METHOD 审中-公开
标题翻译：用于制作复合基板和复合基板的方法
公开(公告)号：WO2007071771A1
公开(公告)日：2007-06-28
申请号：PCT/EP2006/070107
申请日：2006-12-21
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , BOUSSAGOL, Alice , DUPONT, Frédéric , FAURE, Bruce
发明人： BOUSSAGOL, Alice , DUPONT, Frédéric , FAURE, Bruce
IPC分类号： C30B29/40 , C30B33/00 , C30B25/02 , H01L21/762
CPC分类号： H01L21/76254 , Y10S117/915
摘要： The present invention relates to a method for making a composite substrate including a supporting substrate and a layer in a binary or ternary material, said method comprising the transfer of a so-called useful layer (1) of said binary or ternary material onto a receiving support (5) a so-called supporting substrate, characterized in that said binary or ternary material is non-cubic, semi-polar or non-polar material. Another object of the invention relates to a composite substrate for making electronic components of the like including a supporting substrate, a so-called receiving support (5) and a so-called useful layer (1) in a binary or ternary material, characterized in that said binary or ternary material is a non-cubic, semi-polar or non-polar material.
摘要翻译：本发明涉及一种制造复合衬底的方法，所述复合衬底包括支撑衬底和二元或三元材料中的层，所述方法包括将所述二元或三元材料的所谓有用层（1）转移到接收支撑（5）所谓的支撑衬底，其特征在于，所述二元或三元材料是非立方体，半极性或非极性材料。本发明的另一个目的涉及一种用于制造包括支撑衬底，所谓的接收支撑件（5）和所谓的二元或三元材料的有用层（1）的电子部件的复合衬底，其特征在于所述二元或三元材料是非立方体，半极性或非极性材料。

15. 发明申请

WO2004061943A1 RECYCLING BY MECHANICAL MEANS OF A WAFER COMPRISING A TAKING-OFF STRUCTURE AFTER TAKING-OFF A THIN LAYER THEREOF 审中-公开
标题翻译：通过机械手段回收包括取消结构在内的一个薄膜结构的机械手段
公开(公告)号：WO2004061943A1
公开(公告)日：2004-07-22
申请号：PCT/IB2004/000285
申请日：2004-01-07
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , GHYSELEN, Bruno , AULNETTE, Cécile , OSTERNAUD, Bénédicte , AKATSU, Takeshi , FAURE, Bruce
发明人： GHYSELEN, Bruno , AULNETTE, Cécile , OSTERNAUD, Bénédicte , AKATSU, Takeshi , FAURE, Bruce
IPC分类号： H01L21/762
CPC分类号： H01L21/02032 , H01L21/76254
摘要： Method of recycling a donor wafer (10) after having taken off a useful layer comprising a material chosen from semiconductor materials. The donor wafer (10) comprising successively a substrate (1) and a taking-off structure (I), the taking-off structure (I) before taking-off comprising the useful layer to take off; The method comprising removal of substance on the side where the taking-off took place, characterized in that the removal of substance comprises employing mechanical means so that, after removal of substance, at least a part of the taking-off structure (I’) remains, this at least part of the taking-off structure (I’) including at least one other useful layer that can be taken off after recycling, without a supplementary step of reforming a useful layer. The present document likewise relates to: -methods of taking-off a thin layer from a donor wafer (10) which may be recycled according to the invention; -donor wafer (10) which may be recycled according to the invention.
摘要翻译：在取下包含选自半导体材料的材料的有用层之后再循环供体晶片（10）的方法。施主晶片（10）连续地包括基板（1）和起飞结构（I），起飞结构（I）在起飞前包括有用层起飞; 所述方法包括在所述起飞的一侧移除物质，其特征在于，物质的去除包括采用机械装置，使得在除去物质之后，至少一部分起飞结构（I'）剩余物，该至少部分的起飞结构（I'）包括至少一个可再循环之后可以取出的其它有用层，而不需要改造有用层的辅助步骤。本文件同样涉及： - 可以从根据本发明再循环的供体晶片（10）中取出薄层的方法; （10），其可以根据本发明再循环。

16. 发明申请

WO2009092624A1 A METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUCTURE 审中-公开
标题翻译：一种在复合结构上制作外延层的方法
公开(公告)号：WO2009092624A1
公开(公告)日：2009-07-30
申请号：PCT/EP2009/050086
申请日：2009-01-06
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , MARCOVECCHIO, Alexandra
发明人： FAURE, Bruce , MARCOVECCHIO, Alexandra
IPC分类号： H01L21/762 , H01L21/20 , H01L21/683
CPC分类号： H01L21/76254 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method of fabricating materials by epitaxy, comprising a step of epitaxial growth of at least one layer (15) of a material on a composite structure (14). The composite structure comprises at least one thin film (4) bonded to a support substrate (10), a bonding layer (25) being formed by deposition between the support substrate (10) and the thin film (4), the thin film (4) and the support substrate (10) having a mean thermal expansion coefficient of 7 x 10 -6 K -1 or more. The bonding layer of oxide (25) is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide of silicon on the bonding face of the support substrate (10) and/or on the bonding face of the thin film (4). The thickness of the thin film (4) is less than or equal to the thickness of the oxide layer. The method also includes a heat treatment carried out at a temperature that is higher than the temperature for deposition of the layer of oxide of silicon and for a predetermined period.
摘要翻译：本发明涉及通过外延制造材料的方法，包括在复合结构（14）上材料的至少一层（15）外延生长的步骤。所述复合结构包括至少一个结合到支撑衬底（10）的薄膜（4），通过在所述支撑衬底（10）和所述薄膜（4）之间沉积形成所述结合层（25），所述薄膜 4）和平均热膨胀系数为7×10 -6 K -1以上的支撑基板（10）。氧化物（25）的接合层通过在支撑基板（10）的接合面上和/或薄膜（4）的接合面上的硅氧化物层的低压化学气相沉积（LPCVD）形成）。薄膜（4）的厚度小于或等于氧化物层的厚度。该方法还包括在比硅的氧化物层的沉积温度高一定温度的温度下进行的热处理。

17. 发明申请

WO2009092506A3 A METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE 审中-公开
公开(公告)号：WO2009092506A3
公开(公告)日：2009-07-30
申请号：PCT/EP2008/068311
申请日：2008-12-29
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , MARCOVECCHIO, Alexandra
发明人： FAURE, Bruce , MARCOVECCHIO, Alexandra
IPC分类号： H01L21/762 , H01L21/20
摘要： The invention concerns a method of fabricating a composite structure (14) comprising at least one thin film (4) bonded to a support substrate (10), a bonding layer of oxide (12) being formed by deposition between the support substrate (10) and the thin film (4). The thin film and the support substrate have a mean thermal expansion coefficient of 7 X 10 -6 K -1 or more. The bonding layer of oxide (12) is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide on the bonding face of the support substrate (10) and/or on the bonding face of the thin film (4). The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide (12) is equal to or greater than the thickness of the thin film (4).

18. 发明申请

WO2005014895A1 A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER 审中-公开
标题翻译：一种制造外观成层的方法
公开(公告)号：WO2005014895A1
公开(公告)日：2005-02-17
申请号：PCT/EP2004/007577
申请日：2004-07-07
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , DI CIOCCIO, Léa
发明人： FAURE, Bruce , DI CIOCCIO, Léa
IPC分类号： C30B25/02
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00
摘要： The invention concerns a method of fabricating an epitaxially grown layer (6). This method is remarkable in that it comprises the following steps consisting in : a) implanting atomic species within a support substrate (1) to define therein a zone of weakness (12) which demarcates a thin support layer (13) from the remainder (11) of said substrate; b) growing said epitaxial layer (6) by epitaxial growth carried out either directly on said thin support layer (13) or on an interposed layer (5, 23, 31, 32) transferred thereto; c) detaching said remainder (11) from the thin support layer (13) along the zone of weakness (12) by deliberately supplying external energy. Application to the field of optics, optoelectronics, or electronics.
摘要翻译：本发明涉及一种制造外延生长层（6）的方法。该方法是显着的，其包括以下步骤，其包括：a）在支撑衬底（1）内植入原子物质以在其中限定弱化区（12），其将薄支撑层（13）与剩余部分（11））; b）通过外延生长直接在所述薄载体层（13）上或在转移到其上的中间层（5,23,31,32）上生长所述外延层（6）; c）通过有意地提供外部能量沿所述弱化区域（12）将所述剩余部分（11）从所述薄支撑层（13）分离。应用于光学，光电子学或电子学领域。

19. 发明申请

WO2008031809A1 PROCESS FOR MAKING A GAN SUBSTRATE 审中-公开
标题翻译：制造甘油基材的工艺
公开(公告)号：WO2008031809A1
公开(公告)日：2008-03-20
申请号：PCT/EP2007/059500
申请日：2007-09-11
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce
发明人： FAURE, Bruce
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02389 , H01L21/02395 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02634
摘要： The invention relates to a process for making a GaN substrate (60), characterized in that it comprises the following steps: (a) transferring a first monocrystal GaN layer (50) onto a supporting substrate (40); (b) applying crystal growth for a second monocrystal GaN layer on the first layer (50); the first and second GaN layers thereby forming together said GaN substrate (60), said GaN substrate (60) having a thickness of at least 10 micrometers, (c) removing at least one portion of the supporting substrate (40).
摘要翻译：本发明涉及一种制造GaN衬底（60）的方法，其特征在于包括以下步骤：（a）将第一单晶GaN层（50）转移到支撑衬底（40）上; （b）在第一层（50）上施加用于第二单晶GaN层的晶体生长; 所述第一和第二GaN层由此形成所述GaN衬底（60），所述GaN衬底（60）具有至少10微米的厚度，（c）去除所述支撑衬底（40）的至少一部分。

20. 发明申请

WO2007071772A1 METHOD FOR THE MANUFACTURE OF SUBSTRATES, IN PARTICULAR FOR THE OPTICAL, ELECTRONIC OR OPTOELECTRONIC AREAS, AND THE SUBSTRATE OBTAINED IN ACCORDANCE WITH THE SAID METHOD 审中-公开
标题翻译：用于制造基板的方法，特别是针对光学，电子或光电领域以及根据该方法获得的基板
公开(公告)号：WO2007071772A1
公开(公告)日：2007-06-28
申请号：PCT/EP2006/070109
申请日：2006-12-21
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , BOUSSAGOL, Alice , FAURE, Bruce , GHYSELEN, Bruno
发明人： BOUSSAGOL, Alice , FAURE, Bruce , GHYSELEN, Bruno
IPC分类号： H01L21/20 , C30B33/00
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for the manufacture of substrates, in particular for the optical,electronic or optoelectronic areas, and a substrate created in accordance with the said method This present invention concerns a method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, that includes at least the following stages for the transfer of a seed layer (5) onto a receiving support (3), and the epitaxy of a usable layer (6) onto the seed layer (5), the said method being notable in that the thermal coefficient of expansion of the receiving support (3) is identical to or slightly greater than the thermal coefficient of expansion of the usable layer (6), and the 15 thermal coefficient of expansion of the seed layer (5) is more-or-less equal to the thermal coefficient of expansion of the receiving support (3).
摘要翻译：用于制造特别是用于光学，电子或光电子区域的衬底以及根据所述方法制造的衬底的方法本发明涉及用于制造衬底的方法，特别是用于光学，电子或光电子学至少包括用于将种子层（5）转移到接收支撑件（3）上的以下阶段以及将可用层（6）外延到种子层（5）上的区域，所述方法是显着的因为接收支撑件（3）的热膨胀系数等于或略大于可用层（6）的热膨胀系数，并且种子层（5）的15个热膨胀系数更多 - 或者等于接收支撑件（3）的热膨胀系数。

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