专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009092624A1 A METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUCTURE 审中-公开
标题翻译：一种在复合结构上制作外延层的方法
公开(公告)号：WO2009092624A1
公开(公告)日：2009-07-30
申请号：PCT/EP2009/050086
申请日：2009-01-06
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , MARCOVECCHIO, Alexandra
发明人： FAURE, Bruce , MARCOVECCHIO, Alexandra
IPC分类号： H01L21/762 , H01L21/20 , H01L21/683
CPC分类号： H01L21/76254 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method of fabricating materials by epitaxy, comprising a step of epitaxial growth of at least one layer (15) of a material on a composite structure (14). The composite structure comprises at least one thin film (4) bonded to a support substrate (10), a bonding layer (25) being formed by deposition between the support substrate (10) and the thin film (4), the thin film (4) and the support substrate (10) having a mean thermal expansion coefficient of 7 x 10 -6 K -1 or more. The bonding layer of oxide (25) is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide of silicon on the bonding face of the support substrate (10) and/or on the bonding face of the thin film (4). The thickness of the thin film (4) is less than or equal to the thickness of the oxide layer. The method also includes a heat treatment carried out at a temperature that is higher than the temperature for deposition of the layer of oxide of silicon and for a predetermined period.
摘要翻译：本发明涉及通过外延制造材料的方法，包括在复合结构（14）上材料的至少一层（15）外延生长的步骤。所述复合结构包括至少一个结合到支撑衬底（10）的薄膜（4），通过在所述支撑衬底（10）和所述薄膜（4）之间沉积形成所述结合层（25），所述薄膜 4）和平均热膨胀系数为7×10 -6 K -1以上的支撑基板（10）。氧化物（25）的接合层通过在支撑基板（10）的接合面上和/或薄膜（4）的接合面上的硅氧化物层的低压化学气相沉积（LPCVD）形成）。薄膜（4）的厚度小于或等于氧化物层的厚度。该方法还包括在比硅的氧化物层的沉积温度高一定温度的温度下进行的热处理。

IPRDB

热门服务

关于我们

友情链接

联系方式