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11. 发明申请

WO2011063146A3 PLASMA SOURCE DESIGN 审中-公开
公开(公告)号：WO2011063146A3
公开(公告)日：2011-11-24
申请号：PCT/US2010057274
申请日：2010-11-18
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , YANG JANG-GYOO , MILLER MATTHEW L , PINSON JAY D III , CHUC KIEN N
发明人： LUBOMIRSKY DMITRY , YANG JANG-GYOO , MILLER MATTHEW L , PINSON JAY D III , CHUC KIEN N
IPC分类号： H05H1/46 , H01L21/3065
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

12. 发明申请

WO2013062831A3 PROCESS CHAMBER FOR ETCHING LOW K AND OTHER DIELECTRIC FILMS 审中-公开
标题翻译：用于蚀刻低K和其他电介质膜的工艺室
公开(公告)号：WO2013062831A3
公开(公告)日：2013-07-11
申请号：PCT/US2012060668
申请日：2012-10-17
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , NEMANI SRINIVAS , YIEH ELLIE , BELOSTOTSKIY SERGEY G
发明人： LUBOMIRSKY DMITRY , NEMANI SRINIVAS , YIEH ELLIE , BELOSTOTSKIY SERGEY G
IPC分类号： H01L21/3065 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32357 , H01J37/32477 , H01J37/32532 , H01J37/32587 , H01J37/32715 , H01L21/02126 , H01L21/3065 , H01L21/3105 , H01L21/31116 , H01L21/31144 , H01L21/67167 , H01L21/67207 , H01L21/6831
摘要： Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
摘要翻译：描述了用于蚀刻低k和其他电介质膜的方法和处理室。例如，一种方法包括用等离子体处理来修改低k电介质层的部分。选择性地在低k电介质层的掩模层和低k电介质层的未修改部分上蚀刻低k电介质层的改性部分。描述了具有用于交替产生不同等离子体的多个室区的蚀刻室。在实施例中，提供第一电荷耦合等离子体源以在一个操作模式中产生到工件的离子通量，而提供次级等离子体源以在另一个操作模式中提供反应物质通量，而不会对工件产生显着的离子通量。控制器操作以随着时间重复地循环操作模式以去除期望的累积量的电介质材料。

13. 发明申请

WO2009131889A9 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
标题翻译： EXCIMER固化的方法和装置
公开(公告)号：WO2009131889A9
公开(公告)日：2009-12-30
申请号：PCT/US2009040809
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
发明人： LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的装置。该装置包括具有壳体壁的壳体。电极配置在外壳内。管状体在电极周围。管体包括外壁和内壁。至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

14. 发明申请

WO2009131889A2 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
标题翻译：用于指导固化的方法和设备
公开(公告)号：WO2009131889A2
公开(公告)日：2009-10-29
申请号：PCT/US2009040809
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
发明人： LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的设备。该设备包括具有壳体壁的壳体。电极配置在壳体内。管状体围绕电极。管状体包括外壁和内壁。至少一种惰性气体位于外壁和内壁之间，其中外壳壁和电极被配置为激发惰性气体以照射准分子光以固化。

15. 发明申请

WO2007149991A3 DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL 审中-公开
标题翻译：用于底盖的介电沉积和回填工艺
公开(公告)号：WO2007149991A3
公开(公告)日：2008-05-08
申请号：PCT/US2007071804
申请日：2007-06-21
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , NEMANI SRINIVAS D , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , NEMANI SRINIVAS D , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
摘要翻译：描述了减少电介质层中的膜破裂的方法。所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

16. 发明申请

WO2010048076A3 PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS 审中-公开
标题翻译：室内清洁和过程的等离子体源
公开(公告)号：WO2010048076A3
公开(公告)日：2010-07-22
申请号：PCT/US2009061145
申请日：2009-10-19
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , YANG JANG GYOO , LIANG QIWEI , MILLER MATTHEW L , SANTOSA JAMES , CHEN XINGLONG , SMITH PAUL F
发明人： LUBOMIRSKY DMITRY , YANG JANG GYOO , LIANG QIWEI , MILLER MATTHEW L , SANTOSA JAMES , CHEN XINGLONG , SMITH PAUL F
IPC分类号： H05H1/34 , H01L21/205 , H01L21/3065 , H05H1/36
CPC分类号： C23C16/4405 , H01J37/32036 , H01J37/32045 , H01J37/32082 , H01J37/32183 , H01J37/32357
摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.
摘要翻译：提供了用于处理衬底和处理处理室的装置和方法。在一个实施例中，提供了一种用于处理衬底的装置，该装置包括电源，耦合到电源的开关盒和具有可在第一位置和第二位置之间互换的开关的开关盒，第一匹配盒耦合到开关盒，耦合到第一火柴盒的等离子体发生器，耦合到开关盒的第二火柴盒以及耦合到第二火柴盒的远程等离子体源。

17. 发明申请

WO2009137272A3 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：WO2009137272A3
公开(公告)日：2010-03-04
申请号：PCT/US2009041402
申请日：2009-04-22
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , YANG JANG GYOO
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , YANG JANG GYOO
IPC分类号： H05H1/34 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

18. 发明申请

WO2011159905A3 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040713
申请日：2011-06-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

19. 发明申请

WO2012048044A2 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
标题翻译：臭氧固化和固化后水分处理模块
公开(公告)号：WO2012048044A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054984
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/68
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.
摘要翻译：一种具有多个沉积室的基板处理系统，以及可操作以在沉积室之一与负载锁定基板保持区域之间移动基板的第一机器人臂。该系统还可以具有第二机器人臂，该第二机器人臂可操作以在加载锁定衬底保持区域和衬底固化和处理模块的固化室之间移动衬底。基板固化和处理模块附接到负载锁定基板保持区域，并且可以包括：用于在包含臭氧的气氛中固化介电层的固化室和用于在包含水的气氛中处理固化的介电层的处理室汽。固化室可以相对于处理室垂直定位。模块还可以包括可操作地连接到固化室和处理室的加热系统，其中加热系统可操作以将固化室的第一温度调节到从大约150℃到大约200℃，并且调节处理室的第二温度从约80℃至约100℃。该模块还可以在固化室和处理室两者上包括通道门。每个入口门可操作地移动到打开位置以接收基底，并且可操作以在基底正在固化或处理期间移动到封闭的密封位置。

20. 发明申请

WO2011143012A2 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
标题翻译：加热器具有独立的中心区域控制
公开(公告)号：WO2011143012A2
公开(公告)日：2011-11-17
申请号：PCT/US2011035014
申请日：2011-05-03
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
发明人： LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/68792
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.
摘要翻译：一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其耦合到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度衬底的上表面支撑。

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