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11. 发明申请

WO2015158391A1 EDGE UNIFORMITY IMPROVEMENT IN PVD ARRAY COATERS 审中-公开
标题翻译： PVD阵列涂层的边缘均匀性改进
公开(公告)号：WO2015158391A1
公开(公告)日：2015-10-22
申请号：PCT/EP2014/057920
申请日：2014-04-17
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , BENDER, Marcus , PIERALISI, Fabio , SEVERIN, Daniel , LINDENBERG, Ralph , GÄRTNER, Harald
发明人： SCHEER, Evelyn , BENDER, Marcus , PIERALISI, Fabio , SEVERIN, Daniel , LINDENBERG, Ralph , GÄRTNER, Harald
IPC分类号： H01J37/34 , H01J37/32 , C23C14/00
CPC分类号： H01J37/347 , C23C14/352 , C23C14/542 , C23C14/568 , H01J37/32385 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/3464
摘要： An apparatus for deposition of material on a substrate is described. The apparatus includes a deposition array (222) having three or more cathodes (122), wherein the deposition array comprises a first outer deposition assembly (301) comprising at least a first cathode of the three or more cathodes; a second outer deposition assembly (302) opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly (303) comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly. At least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) is configured for depositing the material at a higher rate than the inner deposition assembly (303) on the same substrate during the same time.
摘要翻译：描述了用于在衬底上沉积材料的装置。该装置包括具有三个或更多个阴极（122）的沉积阵列（222），其中沉积阵列包括包含三个或更多个阴极的至少第一阴极的第一外部沉积组件（301）与第一外部沉积组件相对的第二外部沉积组件（302），其包括三个或更多个阴极的至少第二阴极，以及内部沉积组件（303），其包括位于第一外部沉积组件和第二外部沉积组件之间的至少一个内部阴极第二外部沉积组件。第一外部沉积组件（301）和第二外部沉积组件（302）中的至少一个被配置用于在相同的时间内以比内部沉积组件（303）更高的速率沉积材料。

12. 发明申请

WO2015172835A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE BY ROTARY TARGET ASSEMBLIES IN TWO COATING REGIONS 审中-公开
标题翻译：用于通过两个涂层区域中的旋转靶组件涂覆基板的装置和方法
公开(公告)号：WO2015172835A1
公开(公告)日：2015-11-19
申请号：PCT/EP2014/059975
申请日：2014-05-15
申请人： APPLIED MATERIALS, INC. , BENDER, Marcus , PIERALISI, Fabio , SCHEER, Evelyn , SEVERIN, Daniel , GÄRTNER, Harald , LINDENBERG, Ralph
发明人： BENDER, Marcus , PIERALISI, Fabio , SCHEER, Evelyn , SEVERIN, Daniel , GÄRTNER, Harald , LINDENBERG, Ralph
IPC分类号： C23C14/22 , C23C14/35 , C23C14/56 , H01J37/34
CPC分类号： C23C14/225 , C23C14/352 , C23C14/568 , H01J37/32733 , H01J37/3405 , H01J37/3417 , H01J37/3429 , H01J37/345 , H01J37/3452
摘要： According to an embodiment, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus has two or more coating regions for coating the substrate. The sputter deposition apparatus includes a first substrate guiding system for guiding the substrate in a first coating region, wherein the first substrate guiding system defines a first substrate transport direction. The sputter deposition apparatus further includes a second substrate guiding system for guiding the substrate in a second coating region, the second substrate guiding system defining a second substrate transport direction. The second substrate transport direction is the same direction as the first substrate transport direction or is different from the first substrate transport direction. The sputter deposition apparatus further includes a first cathode assembly adapted for generating one or more plasma regions in the first coating region, a second cathode assembly adapted for generating one or more plasma regions in the first coating region, a third cathode assembly adapted for generating one or more plasma regions in the second coating region, and a fourth cathode assembly adapted for generating one or more plasma regions in the second coating region. The first cathode assembly includes: a first rotary target assembly adapted for rotating a target material around a first rotation axis; and a first magnet assembly fixedly positioned in the first rotary target assembly, the first magnet assembly having a first principal plane forming a first angle with a first reference plane which contains the first rotation axis and is perpendicular to the first substrate transport direction. The second cathode assembly includes: a second rotary target assembly adapted for rotating a target material around a second rotation axis; and a second magnet assembly fixedly positioned in the second rotary target assembly, the second magnet assembly having a second principal plane, the second principal plane being parallel to the first principal plane. The third cathode assembly includes: a third rotary target assembly adapted for rotating a target material around a third rotation axis; and a third magnet assembly fixedly positioned in the third rotary target assembly, the third magnet assembly having a third principal plane forming a second angle with a second reference plane which contains the third rotation axis and is perpendicular to the second substrate transport direction, wherein the second angle is different from the first angle. The fourth cathode assembly includes: a fourth rotary target assembly adapted for rotating a target material around a fourth rotation axis; and a fourth magnet assembly fixedly positioned in the fourth rotary target assembly, the fourth magnet assembly having a fourth principal plane, the fourth principal plane being parallel to the third principal plane.
摘要翻译：根据实施例，提供了一种用于涂覆基板的溅射沉积设备。溅射沉积装置具有用于涂覆基板的两个或更多个涂覆区域。溅射沉积设备包括用于在第一涂覆区域中引导衬底的第一衬底引导系统，其中第一衬底引导系统限定第一衬底输送方向。溅射沉积设备还包括用于在第二涂覆区域中引导衬底的第二衬底引导系统，第二衬底引导系统限定第二衬底输送方向。第二基板输送方向与第一基板输送方向相同，也可以不同于第一基板输送方向。溅射沉积设备还包括适于在第一涂覆区域中产生一个或多个等离子体区域的第一阴极组件，适于在第一涂覆区域中产生一个或多个等离子体区域的第二阴极组件，适于产生一个或更多的等离子体区域，以及适于在第二涂覆区域中产生一个或多个等离子体区域的第四阴极组件。第一阴极组件包括：适于围绕第一旋转轴线旋转目标材料的第一旋转靶组件; 以及固定地定位在所述第一旋转靶组件中的第一磁体组件，所述第一磁体组件具有与包含所述第一旋转轴线且垂直于所述第一衬底输送方向的第一参考平面形成第一角度的第一主平面。第二阴极组件包括：适于围绕第二旋转轴线转动目标材料的第二旋转靶组件; 以及固定地定位在所述第二旋转靶组件中的第二磁体组件，所述第二磁体组件具有第二主平面，所述第二主平面平行于所述第一主平面。第三阴极组件包括：适于围绕第三旋转轴线转动目标材料的第三旋转靶组件; 以及固定地定位在所述第三旋转靶组件中的第三磁体组件，所述第三磁体组件具有第三主平面，所述第三主平面与包含所述第三旋转轴线且垂直于所述第二基板输送方向的第二参考平面形成第二角度，其中，第二角度与第一角度不同。第四阴极组件包括：适于围绕第四旋转轴线旋转目标材料的第四旋转靶组件; 以及固定地定位在所述第四旋转靶组件中的第四磁体组件，所述第四磁体组件具有第四主平面，所述第四主平面平行于所述第三主平面。

13. 发明申请

WO2012055728A1 METHOD FOR DEPOSITING A THIN FILM ELECTRODE AND THIN FILM STACK 审中-公开
标题翻译：沉积薄膜电极和薄膜堆叠的方法
公开(公告)号：WO2012055728A1
公开(公告)日：2012-05-03
申请号：PCT/EP2011/068191
申请日：2011-10-18
申请人： APPLIED MATERIALS, INC. , PIERALISI, Fabio
发明人： PIERALISI, Fabio
IPC分类号： H01L29/45 , H01L29/786
CPC分类号： H01L29/45 , H01L29/78618 , H01L29/7869
摘要： A method for depositing at least one thin-film electrode (402, 403) onto a transparent conductive oxide film (405) is provided. At first, the transparent conductive oxide film (405) is deposited onto a substrate (101) to be processed. Then, the substrate (101) and the transparent conductive oxide film (405) are subjected to a processing environment containing a processing gas (207) acting as a donor material or an acceptor material with respect to the transparent conductive oxide film (405). The at least one thin-film electrode (402, 403) is deposited onto at least portions of the transparent conductive oxide film (405). A partial pressure of the processing gas (207) acting as the donor material or the acceptor material with respect to the transparent conductive oxide film (405) is varied while depositing the at least one thin-film electrode (402, 403) onto at least portions of the transparent conductive oxide film (405). Thus, a modified transparent conductive oxide film (410) having reduced interface resistance (408) and bulk resistance (409') can be obtained.
摘要翻译：提供了一种用于将至少一个薄膜电极（402,403）沉积到透明导电氧化膜（405）上的方法。首先，将透明导电氧化物膜（405）沉积在待加工的基板（101）上。然后，将基板（101）和透明导电氧化膜（405）进行处理环境，该处理环境含有相对于透明导电氧化物膜（405）作为施主材料或受主材料的处理气体（207）。所述至少一个薄膜电极（402,403）沉积在所述透明导电氧化物膜（405）的至少一部分上。在将至少一个薄膜电极（402,403）沉积到至少一个薄膜电极（402,403）上之后，改变用作施主材料或受体材料的处理气体（207）相对于透明导电氧化物膜（405）的分压部分透明导电氧化物膜（405）。因此，可以获得具有降低的界面电阻（408）和体电阻（409'）的改性的透明导电氧化物膜（410）。

14. 发明申请

WO2019015782A1 HEAT TREATMENT APPARATUS FOR A VACUUM CHAMBER, DEPOSITION APPARATUS FOR DEPOSITING MATERIAL ON A FLEXIBLE SUBSTRATE, METHOD OF HEAT TREATMENT OF A FLEXIBLE SUBSTRATE IN A VACUUM CHAMBER, AND METHOD FOR PROCESSING A FLEXIBLE SUBSTRATE 审中-公开
公开(公告)号：WO2019015782A1
公开(公告)日：2019-01-24
申请号：PCT/EP2017/068507
申请日：2017-07-21
申请人： APPLIED MATERIALS, INC. , PIERALISI, Fabio , STEINIGER, Gerhard , ALT, Horst
发明人： PIERALISI, Fabio , STEINIGER, Gerhard , ALT, Horst
IPC分类号： F28F5/02 , C23C14/56 , C23C16/455 , C23C16/54
摘要： The present disclosure provides a heat treatment apparatus (100) for use in a vacuum chamber (101). The heat treatment apparatus (100) includes a transport arrangement configured to apply a tension to a flexible substrate (10) in a longitudinal direction, wherein the transport arrangement comprises a drum (110), and a heating device configured to heat the drum (110) for heating the flexible substrate (10) to a first temperature of 120°C to 180°C.

15. 发明申请

WO2015096855A1 HOLDING ARRANGEMENT FOR SUBSTRATES 审中-公开
标题翻译：基板保持布置
公开(公告)号：WO2015096855A1
公开(公告)日：2015-07-02
申请号：PCT/EP2013/077921
申请日：2013-12-23
申请人： APPLIED MATERIALS, INC. , PIERALISI, Fabio , KLEIN, Wolfgang , LINDENBERG, Ralph , BUSCHBECK, Wolfgang , SCHROEDER, Jürgen
发明人： PIERALISI, Fabio , KLEIN, Wolfgang , LINDENBERG, Ralph , BUSCHBECK, Wolfgang , SCHROEDER, Jürgen
IPC分类号： C23C16/458 , C23C14/50 , B65G49/06
CPC分类号： C23C16/4587 , C23C14/50
摘要： A holding arrangement (10) for holding a substrate (20) during vacuum layer deposition is provided. The holding arrangement (10) includes a frame having one or more frame elements; and one or more contact interfaces (50, 500) provided at one or more of the frame elements and configured for contacting one or more conveying rollers (60) of a conveying system, wherein a Shore D hardness of a material of the one or more contact interfaces (50, 500) is in the range of 85 to 90.
摘要翻译：提供了一种用于在真空层沉积期间保持基板（20）的保持装置（10）。保持装置（10）包括具有一个或多个框架元件的框架; 以及一个或多个接触界面（50,500），其设置在一个或多个框架元件处，并且构造成用于接触输送系统的一个或多个输送辊（60），其中所述一个或多个接触界面（50,500）在85至90的范围内。

16. 发明申请

WO2014127847A1 APPARATUS WITH NEIGHBORING SPUTTER CATHODES AND METHOD OF OPERATION THEREOF 审中-公开
标题翻译：具有相邻射灯阴极的装置及其操作方法
公开(公告)号：WO2014127847A1
公开(公告)日：2014-08-28
申请号：PCT/EP2013/053733
申请日：2013-02-25
申请人： APPLIED MATERIALS, INC. , PIERALISI, Fabio , MÜHLFELD, Uwe
发明人： PIERALISI, Fabio , MÜHLFELD, Uwe
IPC分类号： C23C14/56 , C23C14/35 , C23C14/34 , C03C17/00
CPC分类号： C23C14/568 , C23C14/14 , C23C14/35 , C23C14/352 , C23C14/50 , C23C14/542 , H01J37/3435 , H01J37/345
摘要： An apparatus for deposition of a layer stack on a non-flexible substrate or on a substrate provided in a carrier is described. The apparatus includes a vacuum chamber, a transport system, wherein the transport system and the vacuum chamber are configured for inline deposition, a first support for a first rotatable sputter cathode rotatable around a first rotation axis within the vacuum chamber, wherein a first deposition zone for depositing a first material is provided, a second support for a second rotatable sputter cathode rotatable around a second rotation axis within the vacuum chamber, wherein a second deposition zone for depositing a second material is provided, wherein the first rotation axis and the second rotation axis have a distance from each other of 700 mm or below; and a separator structure between the first rotation axis and the second rotation axis, adapted to receive the first material sputtered towards the second deposition zone and the second material sputtered towards the first deposition zone, wherein apparatus is configured for deposition of the layer stack comprising a layer of the first material and a subsequent layer of the second material.
摘要翻译：描述了用于在非柔性基板上或在设置在载体中的基板上沉积层堆叠的装置。所述设备包括真空室，输送系统，其中所述输送系统和所述真空室被构造成用于在线沉积，用于可围绕所述真空室内的第一旋转轴线旋转的第一可旋转溅射阴极的第一支撑件，其中第一沉积区域提供用于沉积第一材料的第二支撑件，用于可在真空室内围绕第二旋转轴线旋转的第二可旋转溅射阴极的第二支撑件，其中提供用于沉积第二材料的第二沉积区域，其中第一旋转轴线和第二旋转轴线之间的距离为700mm以下; 以及在所述第一旋转轴线和所述第二旋转轴线之间的分离器结构，适于接收朝向所述第二沉积区域溅射的所述第一材料，并且所述第二材料溅射朝向所述第一沉积区域，其中，所述设备被构造用于沉积所述层叠体，第一材料的层和第二材料的后续层。

17. 发明申请

WO2012028432A1 STAGGERED THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：分层薄膜晶体管及其形成方法
公开(公告)号：WO2012028432A1
公开(公告)日：2012-03-08
申请号：PCT/EP2011/063712
申请日：2011-08-09
申请人： APPLIED MATERIALS, INC. , PIERALISI, Fabio
发明人： PIERALISI, Fabio
IPC分类号： H01L29/45 , H01L29/49 , H01L29/786 , H01L23/532
CPC分类号： H01L29/45 , H01L23/53238 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A staggered thin film transistor and a method of forming the staggered thin film transistor are provided. The thin film transistor includes an annealed layer stack including an oxide containing layer, a copper alloy layer deposited on the conductive oxide layer, a copper containing oxide layer, and a copper containing layer.
摘要翻译：提供交错的薄膜晶体管和形成交错薄膜晶体管的方法。薄膜晶体管包括退火层堆叠，其包括含氧化物层，沉积在导电氧化物层上的铜合金层，含铜氧化物层和含铜层。

18. 发明申请

WO2015158384A1 LOAD LOCK CHAMBER FOR A VACUUM PROCESSING SYSTEM AND VACUUM PROCESSING SYSTEM 审中-公开
标题翻译：用于真空加工系统和真空处理系统的负载锁仓
公开(公告)号：WO2015158384A1
公开(公告)日：2015-10-22
申请号：PCT/EP2014/057804
申请日：2014-04-16
申请人： APPLIED MATERIALS, INC. , PIERALISI, Fabio , GEBELE, Thomas
发明人： PIERALISI, Fabio , GEBELE, Thomas
IPC分类号： C23C14/56 , C23C16/44 , C23C16/54 , H01J37/32 , H01L21/67
CPC分类号： C23C14/566 , C23C16/4401 , C23C16/54 , H01J37/32743 , H01L21/67201
摘要： A load lock chamber (122; 422; 522) for a vacuum processing system is described. The load lock chamber includes load lock walls forming a load lock chamber volume and a vacuum generating device (425) for evacuating the load lock chamber. The load lock chamber further includes a particle trap (127; 427; 527) being located at least at one wall (430; 528; 529; 530; 531) of the load lock chamber. Further, a processing system including a load lock chamber and a processing chamber is described.
摘要翻译：描述了一种用于真空处理系统的装载锁定室（122; 422; 522）。负载锁定室包括形成负载锁定室容积的负载锁定壁和用于抽空负载锁定室的真空发生装置（425）。负载锁定室还包括至少位于负载锁定室的一个壁（430; 528; 529; 530; 531）处的颗粒捕集器（127; 427; 527）。此外，描述了包括负载锁定室和处理室的处理系统。

19. 发明申请

WO2011045398A1 METHOD AND INSTALLATION FOR PRODUCING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于生产半导体器件的方法和装置以及半导体器件
公开(公告)号：WO2011045398A1
公开(公告)日：2011-04-21
申请号：PCT/EP2010/065478
申请日：2010-10-14
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , PIERALISI, Fabio , BENDER, Marcus
发明人： SCHEER, Evelyn , PIERALISI, Fabio , BENDER, Marcus
IPC分类号： H01L29/45 , H01L29/49 , H01L21/336
CPC分类号： H01L29/458 , H01L21/6776 , H01L29/4908 , H01L29/66765
摘要： A method of producing a semiconductor device is provided, the semiconductor device (50) including a substrate (30), a semiconductor layer (36, 38), and at least one metallization layer (52, 70) adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.
摘要翻译：提供了一种制造半导体器件的方法，所述半导体器件（50）包括衬底（30），半导体层（36,38）和至少一个金属化层（52,70），所述至少一个金属化层与所选择的至少一个元件相邻所述方法包括形成至少一个金属化层，所述至少一个金属化层与从衬底和半导体层中选择的至少一种元素相邻，包括氧。

20. 发明申请

WO2022265857A1 LIGHT ABSORBING BARRIER FOR LED FABRICATION PROCESSES 审中-公开
公开(公告)号：WO2022265857A1
公开(公告)日：2022-12-22
申请号：PCT/US2022/031858
申请日：2022-06-02
申请人： APPLIED MATERIALS, INC.
发明人： PIERALISI, Fabio , ZHU, Mingwei , YANG, Zihao , ZHAO, Liang , FRANKLIN, Jeffrey L. , NG, Hou T. , PATIBANDLA, Nag
IPC分类号： H01L33/00 , H01L27/15 , H01L33/62 , H01L33/48 , H01L33/32 , H01L33/46 , H01L33/50
摘要： Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

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