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11. 发明申请

WO2013165889A8 RADICAL REACTOR WITH INVERTED ORIENTATION 审中-公开
标题翻译：具有反转方向的雷达反应器
公开(公告)号：WO2013165889A8
公开(公告)日：2014-03-20
申请号：PCT/US2013038624
申请日：2013-04-29
申请人： SYNOS TECHNOLOGY INC
发明人： LEE DANIEL HO , PAK SAMUEL S , YANG HYOSEOK , LEE SANG IN
IPC分类号： C23C16/50
CPC分类号： C23C16/4412 , C23C16/4488 , C23C16/452 , C23C16/4583 , C23C16/50 , H01J37/3244 , H01J37/32458 , H01J37/32568
摘要： A radical reactor including an elongated structure received within a chamber of a body of the radical reactor. Radicals are generated within a radical chamber formed in the elongated structure by applying a voltage signal across the elongated structure and an electrode extending within the radical chamber. The radicals generated in the radical chamber are routed via a discharge port of the elongated structure and a conduit formed in the body of the radical reactor onto the substrate. The discharge port and the conduit are not aligned so that irradiation generated in the radical chamber is not directed to the substrate
摘要翻译：一种自由基反应器，包括接收在自由基反应器主体的室内的细长结构。通过在细长结构上施加电压信号和在自由腔内延伸的电极，在形成在细长结构中的自由腔室内产生自由基。在自由腔中产生的自由基通过细长结构的排出口和形成在自由基反应器的主体中的管道被引导到基底上。排出口和管道不对齐，使得在自由腔室中产生的照射不被引导到基底

12. 发明申请

WO2013138049A1 PLASMA REACTOR WITH CONDUCTIVE MEMBER IN REACTION CHAMBER FOR SHIELDING SUBSTRATE FROM UNDESIRABLE IRRADIATION 审中-公开
标题翻译：具有导电构件的反应室中的等离子体反应器，用于从不可辐射辐照的屏蔽基板
公开(公告)号：WO2013138049A1
公开(公告)日：2013-09-19
申请号：PCT/US2013/027414
申请日：2013-02-22
申请人： SYNOS TECHNOLOGY, INC.
发明人： LEE, Sang, In , LEE, Ilsong , YANG, Hyo, Seok
IPC分类号： C23C16/455
CPC分类号： H01L21/322 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/45591 , C23C16/50 , H01J37/32357 , H01J37/32623 , H01L21/02178 , H01L21/02274 , H01L21/0228
摘要： Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.
摘要翻译：将导电构件放置在远程等离子体反应器中的等离子体室与基板之间，以屏蔽基板免受不需要的电磁辐射，离子或电子的照射。导电构件阻挡电磁辐射，中和离子并吸收电子。在等离子体室中产生的自由基流过衬底，尽管导电构件的放置。以这种方式，衬底暴露于自由基，同时减少或去除由电磁辐射，离子或电子引起的对衬底的损伤。

13. 发明申请

WO2012054538A1 FORMATION OF BARRIER LAYER ON DEVICE USING ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用原子层沉积在器件上形成障碍层
公开(公告)号：WO2012054538A1
公开(公告)日：2012-04-26
申请号：PCT/US2011/056785
申请日：2011-10-18
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/44
CPC分类号： H01L23/3192 , C23C16/042 , C23C16/45551 , H01L2924/0002 , H01L2924/00
摘要： The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.
摘要翻译：通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个可以控制。通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

14. 发明申请

WO2012015744A1 ROTATING REACTOR ASSEMBLY FOR DEPOSITING FILM ON SUBSTRATE 审中-公开
标题翻译：旋转反应器组件用于在基板上沉积膜
公开(公告)号：WO2012015744A1
公开(公告)日：2012-02-02
申请号：PCT/US2011/045199
申请日：2011-07-25
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： C23C16/45551 , C23C16/45536 , C23C16/54
摘要： A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.
摘要翻译：旋转反应器组件包括喷射器转子，其包括在平行于喷射器转子的旋转轴线的方向上延伸的通道和连接到通道的至少一个喷射孔; 以及引入材料的进气口。当喷射器转子旋转时，通道及时地和/或周期性地连接到进气口，使得材料通过至少一个喷射孔喷射到基底。

15. 发明申请

WO2010095901A2 METHOD FOR FORMING THIN FILM USING RADICALS GENERATED BY PLASMA 审中-公开
标题翻译：用等离子体产生自由基形成薄膜的方法
公开(公告)号：WO2010095901A2
公开(公告)日：2010-08-26
申请号：PCT/KR2010/001076
申请日：2010-02-22
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： H01L21/205
CPC分类号： C23C16/45538 , C23C16/06 , C23C16/34 , C23C16/45517 , C23C16/45523 , C23C16/45551 , C23C16/45563 , C23C16/50 , C23C16/545
摘要： A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.
摘要翻译：用等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将基底暴露于反应物前体和源前体的基团的混合物，在基底上形成第一薄膜; 将衬底暴露于源前体; 以及通过将衬底暴露于反应物前体和源前体的自由基的混合物而在衬底上形成第二薄膜。由于衬底在形成第一薄膜和形成第二薄膜之间暴露于源前体，所以可以改善沉积速率。

16. 发明申请

WO2013148446A1 SCANNING INJECTOR ASSEMBLY MODULE FOR PROCESSING SUBSTRATE 审中-公开
标题翻译：扫描注射器组件模块用于处理基板
公开(公告)号：WO2013148446A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/033208
申请日：2013-03-21
申请人： SYNOS TECHNOLOGY, INC.
发明人： PAK, Samuel, S. , LEE, Sang In , LEE, Ilsong , YANG, Hyo Seok
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/45551 , C23C16/45561 , C23C16/45589
摘要： An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms.
摘要翻译：描述了沿着预定路径移动以将气体注入基板并排出多余气体的注射模块组件（IMA）。 IMA可以用于处理由于各种原因（例如基板的大尺寸和重量）而难以移动的基板。 IMA连接到具有结构的一组或多组接合臂，以提供用于喷射气体或排出多余气体的一个或多个路径。 IMA由第一驱动机构（例如，线性马达）移动，并且连接的臂由第二驱动机构（例如，滑轮和电缆）分开操作，以减少由连接臂的重量引起的力或扭矩。第一驱动机构和第二驱动机构的运动被同步以移动IMA和连接臂。

17. 发明申请

WO2012112795A1 ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS 审中-公开
标题翻译：使用放射线对基板上的层进行增强沉积
公开(公告)号：WO2012112795A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025483
申请日：2012-02-16
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C30B23/00
CPC分类号： C23C16/45534 , B05D1/36 , B05D1/38 , B05D1/60 , B05D1/62 , C23C16/345 , C23C16/45517 , C23C16/45553 , C23C16/513
摘要： Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.
摘要翻译：实施例涉及在不同的沉积过程阶段使用自由基。可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或增加沉积速率。用于产生自由基的气体可包括惰性气体和其它气体。基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

18. 发明申请

WO2012112373A1 COMBINED INJECTION MODULE FOR SEQUENTIALLY INJECTING SOURCE PRECURSOR AND REACTANT PRECURSOR 审中-公开
标题翻译：用于连续注射源前体和反应物前体的组合注射模块
公开(公告)号：WO2012112373A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/024451
申请日：2012-02-09
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H01L21/31
CPC分类号： C23C16/45548 , C23C16/403 , C23C16/4412
摘要： Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.
摘要翻译：使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。然后将反应物前体经由与第一通道分离的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分离的第二排气部分排出。在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

19. 发明申请

WO2011041255A1 VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE 审中-公开
标题翻译：用于在弯曲表面形成薄膜的蒸气沉积反应器
公开(公告)号：WO2011041255A1
公开(公告)日：2011-04-07
申请号：PCT/US2010/050358
申请日：2010-09-27
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/455
CPC分类号： C23C16/045 , C23C16/00 , C23C16/40 , C23C16/403 , C23C16/45542 , C23C16/45551 , C23C16/45553 , C23C16/45574 , C23C16/4558 , C23C16/545
摘要： A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.
摘要翻译：蒸镀反应器及薄膜形成方法。气相沉积反应器包括沿圆弧排列的第一至第三部分。第一部分包括用于将材料注射到第一部分中的凹部中的至少一个第一注射部分。第二部分与第一部分相邻，并具有与第一部分的凹部通信连接的凹部。第三部分与第二部分相邻并且具有与第二部分的凹部连通的凹部和用于从气相沉积反应器排出材料的排气部分。

20. 发明申请

WO2010085081A3 ELECTRODE STRUCTURE, DEVICE COMPRISING THE SAME AND METHOD FOR FORMING ELECTRODE STRUCTURE 审中-公开
公开(公告)号：WO2010085081A3
公开(公告)日：2010-07-29
申请号：PCT/KR2010/000360
申请日：2010-01-20
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： H01L31/042
摘要： An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor cam be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

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