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1. 发明申请

WO2012071195A1 EXTENDED REACTOR ASSEMBLY WITH MULTIPLE SECTIONS FOR PERFORMING ATOMIC LAYER DEPOSITION ON LARGE SUBSTRATE 审中-公开
标题翻译：扩展的反应堆组件，用于在大型基板上执行原子层沉积的多个部分
公开(公告)号：WO2012071195A1
公开(公告)日：2012-05-31
申请号：PCT/US2011/060474
申请日：2011-11-11
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： C23C16/45551 , C23C16/45536 , H01J37/32376 , H01J37/32449 , H01J37/32568 , H01J37/32752 , H01J37/32807
摘要： An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto the substrate as the substrate passes the injector or radical reactor as part of the ALD process. Each injector or radical reactor includes a plurality of sections where at least two sections have different cross sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor may inject the gas or the radicals more uniformly over the substrate. Each injector or radical reactor may include more than one outlet for discharging excess gas or radicals outside the deposition device.
摘要翻译：在用于在大衬底上进行原子层沉积（ALD）的沉积装置中的细长反应器组件。细长的反应器组件包括一个或多个注射器和/或自由基反应器。当基片作为ALD过程的一部分通过注射器或自由基反应器时，每个注射器或自由基反应器将气体或基团注入到基底上。每个喷射器或自由基反应器包括多个部分，其中至少两个部分具有不同的横截面构造。通过在注射器或自由基反应器中提供不同的部分，注射器或自由基反应器可以将气体或自由基更均匀地注入基底上。每个注射器或自由基反应器可以包括用于排出沉积装置外部的多余气体或自由基的多于一个的出口。

2. 发明申请

WO2012012381A1 TREATING SURFACE OF SUBSTRATE USING INERT GAS PLASMA IN ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用原子等离子体在原子层沉积中处理基板的表面
公开(公告)号：WO2012012381A1
公开(公告)日：2012-01-26
申请号：PCT/US2011/044470
申请日：2011-07-19
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H01L21/00
CPC分类号： C23C16/45534 , C23C16/45551 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J37/32779 , H01J2237/332
摘要： Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to change the surface state of the deposited layer to a state more amenable to absorb subsequent source precursor molecules. The radicals of the inert gas disconnect bonding of molecules on the surface of the substrate, and render the molecules on the surface to have dangling bonds. The dangling bonds facilitate absorption of subsequently injected source precursor molecules into the surface. Exposure to the radicals of the inert gas thereby increases the deposition rate and improves the properties of the deposited layer.
摘要翻译：使用原子层沉积（ALD）在衬底上沉积一层或多层材料，然后在使衬底进一步沉积层之前用惰性气体的自由基进行表面处理。惰性气体的自由基似乎将沉积层的表面状态改变为更适于吸收后续的源前体分子的状态。惰性气体的自由基分离在基底表面上的分子结合，并使表面上的分子具有悬挂键。悬挂键有助于随后将注入的源前体分子吸收到表面中。暴露于惰性气体的自由基因而增加了沉积速率并改善了沉积层的性能。

3. 发明申请

WO2013015943A1 TEXTILE INCLUDING FIBERS DEPOSITED WITH MATERIAL USING ATOMIC LAYER DEPOSITION FOR INCREASED RIGIDITY AND STRENGTH 审中-公开
标题翻译：纺织品包括用材料沉积的纤维，使用原子层沉积增加刚度和强度
公开(公告)号：WO2013015943A1
公开(公告)日：2013-01-31
申请号：PCT/US2012/044839
申请日：2012-06-29
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： D06M11/77 , A01N59/16 , C23C16/045 , C23C16/45544 , C23C16/45555 , D06M11/45 , D06M11/83 , Y10T442/20 , Y10T442/2098 , Y10T442/2984 , A01N25/08 , A01N2300/00
摘要： Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.
摘要翻译：实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。这样的功能包括例如较高的刚性，较高的强度，耐弯曲性，增加抗冲击性或增加抗纤维或含纤维材料的张力。将一层材料沉积在纤维或含纤维材料上，然后材料的表面被氧化，硝化或碳化以增加材料的体积。通过增加材料的体积，材料承受压应力。压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

4. 发明申请

WO2011149690A1 PROTECTIVE STRUCTURE ENCLOSING DEVICE ON FLEXIBLE SUBSTRATE 审中-公开
标题翻译：保护结构在柔性基板上封装设备
公开(公告)号：WO2011149690A1
公开(公告)日：2011-12-01
申请号：PCT/US2011/036523
申请日：2011-05-13
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H05B33/10 , H01J1/62
CPC分类号： H01L51/5253 , H01L51/0096 , H01L2251/5338 , H01L2251/5369 , Y02E10/549
摘要： A structure for protecting a device includes a first layer, one or more first microstructures on the first layer, and a second layer disposed on the first layer. The second layer is disposed on a surface of the first layer on which one or more microstructures are provided. The microstructure may have a hemispheric shape or other random shapes having a curved surface. Since the area of the interface surface between layers is increased due to the at least one microstructure, the stress per unit area of the interface surface is reduced. Further, the microstructure increases the length of the path that ambient species need to travel in order to reach a device or other active components, thereby reducing the amount of infiltrating ambient species.
摘要翻译：用于保护装置的结构包括第一层，第一层上的一个或多个第一微结构和设置在第一层上的第二层。第二层设置在其上设置有一个或多个微结构的第一层的表面上。微结构可以具有半球形状或具有弯曲表面的其它随机形状。由于至少一个微结构，由于层间界面的面积增加，因此界面表面的每单位面积的应力减小。此外，微结构增加环境物质需要行进的路径的长度以便到达装置或其它活性组分，从而减少渗透环境物质的量。

5. 发明申请

WO2010144377A1 VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：蒸气沉积反应器和形成薄膜的方法
公开(公告)号：WO2010144377A1
公开(公告)日：2010-12-16
申请号：PCT/US2010/037660
申请日：2010-06-07
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/50
CPC分类号： C23C16/45551 , C01B21/076 , C23C16/32 , C23C16/34 , C23C16/40
摘要： A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.
摘要翻译：蒸镀反应器及薄膜形成方法。气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。第二部分的凹部被保持为具有低于第一空间中的压力的压力。第三部分连接到第二空间，并且排气部分连接到第三空间。

6. 发明申请

WO2013138049A1 PLASMA REACTOR WITH CONDUCTIVE MEMBER IN REACTION CHAMBER FOR SHIELDING SUBSTRATE FROM UNDESIRABLE IRRADIATION 审中-公开
标题翻译：具有导电构件的反应室中的等离子体反应器，用于从不可辐射辐照的屏蔽基板
公开(公告)号：WO2013138049A1
公开(公告)日：2013-09-19
申请号：PCT/US2013/027414
申请日：2013-02-22
申请人： SYNOS TECHNOLOGY, INC.
发明人： LEE, Sang, In , LEE, Ilsong , YANG, Hyo, Seok
IPC分类号： C23C16/455
CPC分类号： H01L21/322 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/45591 , C23C16/50 , H01J37/32357 , H01J37/32623 , H01L21/02178 , H01L21/02274 , H01L21/0228
摘要： Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.
摘要翻译：将导电构件放置在远程等离子体反应器中的等离子体室与基板之间，以屏蔽基板免受不需要的电磁辐射，离子或电子的照射。导电构件阻挡电磁辐射，中和离子并吸收电子。在等离子体室中产生的自由基流过衬底，尽管导电构件的放置。以这种方式，衬底暴露于自由基，同时减少或去除由电磁辐射，离子或电子引起的对衬底的损伤。

7. 发明申请

WO2012054538A1 FORMATION OF BARRIER LAYER ON DEVICE USING ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用原子层沉积在器件上形成障碍层
公开(公告)号：WO2012054538A1
公开(公告)日：2012-04-26
申请号：PCT/US2011/056785
申请日：2011-10-18
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/44
CPC分类号： H01L23/3192 , C23C16/042 , C23C16/45551 , H01L2924/0002 , H01L2924/00
摘要： The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.
摘要翻译：通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个可以控制。通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

8. 发明申请

WO2012015744A1 ROTATING REACTOR ASSEMBLY FOR DEPOSITING FILM ON SUBSTRATE 审中-公开
标题翻译：旋转反应器组件用于在基板上沉积膜
公开(公告)号：WO2012015744A1
公开(公告)日：2012-02-02
申请号：PCT/US2011/045199
申请日：2011-07-25
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： C23C16/45551 , C23C16/45536 , C23C16/54
摘要： A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.
摘要翻译：旋转反应器组件包括喷射器转子，其包括在平行于喷射器转子的旋转轴线的方向上延伸的通道和连接到通道的至少一个喷射孔; 以及引入材料的进气口。当喷射器转子旋转时，通道及时地和/或周期性地连接到进气口，使得材料通过至少一个喷射孔喷射到基底。

9. 发明申请

WO2012112795A1 ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS 审中-公开
标题翻译：使用放射线对基板上的层进行增强沉积
公开(公告)号：WO2012112795A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025483
申请日：2012-02-16
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C30B23/00
CPC分类号： C23C16/45534 , B05D1/36 , B05D1/38 , B05D1/60 , B05D1/62 , C23C16/345 , C23C16/45517 , C23C16/45553 , C23C16/513
摘要： Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.
摘要翻译：实施例涉及在不同的沉积过程阶段使用自由基。可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或增加沉积速率。用于产生自由基的气体可包括惰性气体和其它气体。基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

10. 发明申请

WO2012112373A1 COMBINED INJECTION MODULE FOR SEQUENTIALLY INJECTING SOURCE PRECURSOR AND REACTANT PRECURSOR 审中-公开
标题翻译：用于连续注射源前体和反应物前体的组合注射模块
公开(公告)号：WO2012112373A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/024451
申请日：2012-02-09
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H01L21/31
CPC分类号： C23C16/45548 , C23C16/403 , C23C16/4412
摘要： Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.
摘要翻译：使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。然后将反应物前体经由与第一通道分离的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分离的第二排气部分排出。在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

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