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11. 发明申请

WO2009072780A3 METHOD FOR MAKING METAL OXIDE NANO PARTICLE AND LIGHT EMITTING DEVICE HAVING LIGHT EMITTING LAYER DISTRIBUTED METAL OXIDE NANO PARTICLE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：制备金属氧化物纳米颗粒的方法和具有发光层分布的金属氧化物纳米颗粒的发光装置及其制造方法
公开(公告)号：WO2009072780A3
公开(公告)日：2009-07-23
申请号：PCT/KR2008007053
申请日：2008-11-28
申请人： UNIV SOGANG IND UNIV COOP FOUN , KIM TAE-WHAN , LI FUSHAN , JUNG JAE-HUN , KIM YOUNG-HO
发明人： KIM TAE-WHAN , LI FUSHAN , JUNG JAE-HUN , KIM YOUNG-HO
IPC分类号： C09K11/06
CPC分类号： H05B33/22 , H05B33/10
摘要： A light-emitting device in accordance with an embodiment of the present invention can include a light-emitting layer, which has a light-emitting medium of metal oxide nano-particles distributed inside a mixture thin film being made of a dielectric polymer material and a conductive polymer material. Here, the metal oxide nano-particles can be formed by forming a first mixture thin film, forming a metal thin film on one side of the first mixture thin film, and forming a second mixture thin film by hardening the precursor through heat treatment, in which the dielectric polymer material and the conductive polymer material have been mixed in the second mixture thin film, and forming metal oxide nano-particles, in which the metal oxide nano-particles are distributed inside the second mixture thin film during the hardening.
摘要翻译：根据本发明实施例的发光器件可以包括发光层，该发光层具有分布在混合物薄膜内部的金属氧化物纳米颗粒的发光介质，该混合物薄膜由介电聚合物材料和导电高分子材料。此处，金属氧化物纳米粒子可以通过以下方式形成：形成第一混合物薄膜，在第一混合物薄膜的一侧上形成金属薄膜，并且通过热处理使前体硬化来形成第二混合物薄膜，其中介电聚合物材料和导电聚合物材料已经混合在第二混合薄膜中，并形成金属氧化物纳米颗粒，其中金属氧化物纳米颗粒在硬化过程中分布在第二混合薄膜内部。

12. 发明申请

WO2009044963A1 MEMORY DEVICE USING CARBON NANOTUBE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用碳纳米管的存储器件及其制造方法
公开(公告)号：WO2009044963A1
公开(公告)日：2009-04-09
申请号：PCT/KR2008/000717
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , KIM, Bong-Jun , LEE, Dong-Ik , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , KIM, Bong-Jun , LEE, Dong-Ik , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/35 , H01L29/42332 , H01L51/0048
摘要： Provided are a memory device using a carbon nanotube and a method of fabricating the same. The memory device includes a substrate, a gate dielectric layer formed on the substrate, a charge-trapping layer formed on the gate dielectric layer and formed of a carbon nanotube, a source and a drain formed in the substrate at both sides of the charge-trapping layer, and electrodes formed on the charge-trapping layer, the source, and the drain, respectively.
摘要翻译：提供了使用碳纳米管的存储器件及其制造方法。存储器件包括：衬底，形成在衬底上的栅极电介质层，形成在栅极电介质层上并由碳纳米管形成的电荷俘获层，形成于基底中的电荷 - 捕获层和形成在电荷捕获层，源极和漏极上的电极。

13. 发明申请

WO2013032191A3 NON-VOLATILE POLYMER MEMORY DEVICE INCLUDING A BUFFER LAYER, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：包含缓冲层的非易失性聚合物存储器件及其制造方法
公开(公告)号：WO2013032191A3
公开(公告)日：2013-04-25
申请号：PCT/KR2012006806
申请日：2012-08-27
申请人： IUCF HYU , KIM TAE WHAN , SON JUNG MIN
发明人： KIM TAE WHAN , SON JUNG MIN
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C13/0016 , G11C2213/15 , G11C2213/51 , H01L51/0037 , H01L51/0591
摘要： The present invention relates to a non-volatile polymer memory device, and to a method for manufacturing same, and more particularly, to a non-volatile polymer memory device, and to a method for manufacturing same, wherein the device comprises: a substrate; a lower electrode formed on the substrate; a buffer layer formed on the lower electrode; a PEDOT:PSS thin film layer formed on the buffer layer; and an upper electrode formed on the PEDOT:PSS thin film layer. The non-volatile memory device of the present invention has the buffer layer inserted between the lower electrode and the PEDOT:PSS thin film layer, thereby exhibiting the effects of preventing oxide film formation between the lower electrode and the PEDOT:PSS thin film layer and causing the upper surface of the PEDOT:PSS thin film layer to have a uniform roughness despite being manufactured using a flexible substrate. Therefore, the flexibility and high memory margin of a PEDOT:PSS memory device can be maintained.
摘要翻译：本发明涉及一种非挥发性聚合物存储装置及其制造方法，更具体地涉及一种非挥发性聚合物存储装置及其制造方法，其中该装置包括：一基板; 形成在所述基板上的下电极; 形成在下电极上的缓冲层; PEDOT：形成在缓冲层上的PSS薄膜层; 以及形成在PEDOT：PSS薄膜层上的上电极。本发明的非易失性存储器件具有插入在下电极和PEDOT：PSS薄膜层之间的缓冲层，从而表现出防止下电极和PEDOT：PSS薄膜层和尽管使用柔性基板制造，但是使PEDOT：PSS薄膜层的上表面具有均匀的粗糙度。因此，可以保持PEDOT：PSS存储器件的灵活性和高存储容限。

14. 发明申请

WO2012093873A2 METHOD FOR DETECTING TOUCH POSITION OF TOUCH SCREEN AND TOUCH SCREEN USING SAME 审中-公开
标题翻译：用于检测触摸屏的触摸位置和触摸屏的方法
公开(公告)号：WO2012093873A2
公开(公告)日：2012-07-12
申请号：PCT/KR2012000127
申请日：2012-01-05
申请人： IUCF HYU , KIM TAE WHAN , RYU JU TAE , PARK SU HYEONG
发明人： KIM TAE WHAN , RYU JU TAE , PARK SU HYEONG
IPC分类号： G06F3/03 , G06F3/041
CPC分类号： G06F3/041 , G06F3/0416 , G06F3/044
摘要： Disclosed are a method for detecting a touch position of a touch screen and the touch screen using the same. A method for detecting a touch position on a touch screen comprises the steps of: detecting a touched touch screen block among touch screen blocks by using signals that are generated from at least one touch sensor among touch sensors, which are included in a plurality of touch screen blocks divided on an area of the touch screen; and detecting a touch position in the detected touch screen block on the basis of a signal of a touch sensor which is included in the detected touch screen block. Thus, compared to an existing method of processing a signal by reading measurement values of all measurement sensors, the invention enables fast signal processing, thereby reducing measurement signal processing time for measuring a touch position of a touch screen.
摘要翻译：公开了一种用于检测触摸屏和使用其的触摸屏的触摸位置的方法。一种用于检测触摸屏上的触摸位置的方法，包括以下步骤：通过使用包括在多个触摸中的触摸传感器中的至少一个触摸传感器产生的信号来检测触摸屏块中触摸的触摸屏块屏幕块分割在触摸屏的一个区域上; 并且根据检测到的触摸屏块中包含的触摸传感器的信号来检测检测到的触摸屏块中的触摸位置。因此，与通过读取所有测量传感器的测量值来处理信号的现有方法相比，本发明实现了快速信号处理，从而减少了用于测量触摸屏的触摸位置的测量信号处理时间。

15. 发明申请

WO2011025216A3 PHOTODETECTOR USING A GRAPHENE THIN FILM AND NANOPARTICLES, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：采用石墨薄膜和纳米颗粒的光电探测器及其制造方法
公开(公告)号：WO2011025216A3
公开(公告)日：2011-07-07
申请号：PCT/KR2010005631
申请日：2010-08-24
申请人： IUCF HYU , KIM TAE-WHAN , JUNG JAE-HOON , SON DONG-ICK , LEE JUNG-MIN , YANG HEE-YEON , PARK WON-IL
发明人： KIM TAE-WHAN , JUNG JAE-HOON , SON DONG-ICK , LEE JUNG-MIN , YANG HEE-YEON , PARK WON-IL
IPC分类号： H01L31/0248 , B82B1/00
CPC分类号： H01L31/035209 , H01L31/112 , H01L51/428
摘要： Provided are a photodetector using a graphene thin film and nanoparticles and a method for producing same. The photodetector of the present invention comprises: a sheet-shaped graphene thin film produced by the deposition of graphene using a vapor carbon source; and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, and consisting of nanoparticles without a matrix material. The above-described photodetector has a planar structure in which the graphene thin film is used as a channel and as an electrode, and nanoparticles are used as a photovoltaic material (which forms an electron-hole pair by the photoelectron-motive force produced by ultraviolet rays). The photodetector of the present invention has a remarkably simple structure and can be produced at a low cost, thus improving productivity. Further, the photodetector of the present invention comprises said graphene thin film, and thus can operate with low power consumption.
摘要翻译：提供了使用石墨烯薄膜和纳米颗粒的光电探测器及其制造方法。本发明的光检测器包括：通过使用蒸汽碳源沉积石墨烯而产生的片状石墨烯薄膜; 以及形成在所述石墨烯薄膜上并且被图案化以限定所述石墨烯薄膜的电极区域并且由不含基质材料的纳米颗粒组成的纳米颗粒层。上述光检测器具有将石墨烯薄膜用作沟道和电极的平面结构，并且使用纳米颗粒作为光伏材料（其通过由紫外线产生的光电子动力形成电子 - 空穴对射线）。本发明的光检测器具有非常简单的结构并且可以以低成本生产，因此提高了生产率。此外，本发明的光检测器包括所述石墨烯薄膜，因此可以以低功耗工作。

16. 发明申请

WO2010147398A3 ELECTROPHORETIC DISPLAY WITH INTEGRATED TOUCH SCREEN 审中-公开
标题翻译：具有集成触摸屏的电子显示屏
公开(公告)号：WO2010147398A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010003899
申请日：2010-06-17
申请人： IUCF HYU , KIM TAE-WHAN , PARK SU-HYEONG , LEE DEA-UK
发明人： KIM TAE-WHAN , PARK SU-HYEONG , LEE DEA-UK
IPC分类号： G02F1/167 , G06F3/041
CPC分类号： G02F1/167 , G02F1/13338 , G02F2001/13312 , G06F3/0412
摘要： The present invention relates to an electrophoretic display with an integrated touch screen which uses an infrared optical sensor system. An electrophoretic display, according to one embodiment of the present invention, comprises: a substrate having image gate wires and image signal wires intersecting one another; an image switching TFT electrically connected to the image gate wires and to the image signal wires; a sensing TFT for sensing infrared rays and generating an infrared ray sensing signal; an output switching TFT connected to the sensing TFT, for outputting position information from the infrared ray sensing signal; an infrared filter insulation layer formed on the substrate to cover the sensing TFT, for transmitting only infrared rays; a pixel electrode which is formed on the infrared ray filter insulation layer and which is electrically connected to the image switching TFT; an electrophoretic film which is formed on the pixel electrode, which has a plurality of micro capsules including pigment particles with positive and negative electrical charges; and a common electrode, which is formed on the electrophoretic film.
摘要翻译：本发明涉及一种使用红外光学传感器系统的集成触摸屏的电泳显示器。根据本发明的一个实施例的电泳显示器包括：具有彼此相交的图像栅极线和图像信号线的衬底; 电连接到图像栅极线和图像信号线的图像转换TFT; 用于感测红外线并产生红外线感测信号的感测TFT; 连接到感测TFT的输出开关TFT，用于从红外线感测信号输出位置信息; 形成在基板上以覆盖感测TFT的红外滤光器绝缘层，用于仅传输红外线; 像素电极，其形成在所述红外线滤光器绝缘层上，并且电连接到所述图像转换TFT; 形成在像素电极上的电泳膜，其具有包含具有正和负电荷的颜料颗粒的多个微胶囊; 以及形成在电泳膜上的公共电极。

17. 发明申请

WO2009104870A2 MEMORY DEVICE USING CARBON NANOTUBES ATTACHED NANOPARTICLES THERETO AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用碳纳米管附着在纳米颗粒上的存储装置及其制造方法
公开(公告)号：WO2009104870A2
公开(公告)日：2009-08-27
申请号：PCT/KR2009/000234
申请日：2009-01-16
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , FUSHAN, Li , SON, Dong-Ick , KIM, Sang-Wook , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , FUSHAN, Li , SON, Dong-Ick , KIM, Sang-Wook , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/025 , H01L27/2472 , H01L45/10 , H01L45/1233 , H01L45/14 , H01L45/1608 , H01L51/0591
摘要： Provided are a memory device using carbon nanotubes (CNTs) and a method of fabricating the same. The memory device includes a substrate, a first electrode formed on the substrate, a charge trapping layer formed on the first electrode and comprised of carbon nanotubes (CNTs) to which nanoparticles are attached, and a second electrode formed on the charge trapping layer. The memory device is a new device which uses a structure in which the nanoparticles are attached to the surface of the CNTs to store a state.
摘要翻译：提供了一种使用碳纳米管（CNT）的存储器件及其制造方法。所述存储器件包括衬底，形成在所述衬底上的第一电极，形成在所述第一电极上并由附着有纳米颗粒的碳纳米管（CNT）组成的电荷俘获层以及形成在所述电荷俘获层上的第二电极。存储器件是一种新型器件，其使用纳米颗粒附着到CNT表面以存储状态的结构。

18. 发明申请

WO2005093837A1 FLASH MEMORY DEVICE UTILIZING NANOCRYSTALS EMBEDED IN POLYMER 审中-公开
标题翻译：使用嵌入聚合物的纳米晶体的闪存存储器件
公开(公告)号：WO2005093837A1
公开(公告)日：2005-10-06
申请号：PCT/KR2005/000161
申请日：2005-01-18
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY , HANYANG HAK WON CO., LTD. , KIM, Tae-Whan , KIM, Young-Ho , YOON, Chong-Seung , KIM, Jae-Ho , JUNG, Jae-Hun , LIM, Sung-Keun , SONG, Mun-Seop
发明人： KIM, Tae-Whan , KIM, Young-Ho , YOON, Chong-Seung , KIM, Jae-Ho , JUNG, Jae-Hun , LIM, Sung-Keun , SONG, Mun-Seop
IPC分类号： H01L27/115
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L29/42332 , Y10S977/773 , Y10S977/777 , Y10S977/779 , Y10S977/943
摘要： The present invention relates to a flash memory device with a nanoscale floating gate and a method for manufacturing thereof, more particularly, the flash memory device with a nanoscale floating gate of highly efficient and cost effective by utilizing self-assembled nanocrystals embedded in a polymer film. The present invention provides much simpler and easier method for manufacturing nanocrystalines for the flash memory device than the conventional method. Since the nanocrystalines is homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, the present invention provides memory devices with nanoscale floating gates of high efficient and cost effective and the method for manufacturing the same by employing electrically and chemically more stable nanosacle floating gates compared to the conventional ones.
摘要翻译：本发明涉及一种具有纳米尺度浮动栅极的闪速存储器件及其制造方法，更具体地说，涉及利用嵌入聚合物膜中的自组装纳米晶体，具有高效且成本有效的纳米尺度浮栅的闪速存储器件。与常规方法相比，本发明提供了用于制造闪存装置的纳米晶体的简单和容易的方法。由于纳米晶体作为聚合物层均匀地分散而没有附聚，因此可以控制纳米颗粒的尺寸和密度。此外，本发明提供了具有高效率和成本有效的纳米级浮栅的存储器件及其制造方法，该方法通过采用电化学和化学更稳定的纳米级浮动栅极与传统的栅极相比。

19. 发明申请

WO2012169731A3 NAND FLASH MEMORY HAVING 3-DIMENSIONAL STRUCTURE 审中-公开
标题翻译：具有三维结构的NAND闪存
公开(公告)号：WO2012169731A3
公开(公告)日：2013-02-07
申请号：PCT/KR2012003784
申请日：2012-05-15
申请人： IUCF HYU , KIM TAE WHAN , YOU JOO HYUNG , JIN JUN
发明人： KIM TAE WHAN , YOU JOO HYUNG , JIN JUN
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/11582 , H01L29/7926
摘要： Disclosed is a NAND flash memory which is vertically elongated from a substrate and has a multi-layered lamination structure. A control gate is formed by alternating with an interlayer insulating film. In addition, the control gate is separated in a direction parallel to the substrate through a barrier insulating film. Therefore, only one side of the control gate is in contact with a blocking insulating film. As a result, independent charge-trapping is enabled from one stack structure to both sides thereof. Consequently, the density of flash memory is increased and charge controllability is improved.
摘要翻译：公开了一种从衬底垂直伸长并具有多层层压结构的NAND闪速存储器。通过与层间绝缘膜交替形成控制栅极。此外，控制栅极通过阻挡绝缘膜在与衬底平行的方向上分离。因此，只有控制栅极的一侧与阻挡绝缘膜接触。结果，可以从一个堆叠结构到其两侧实现独立的电荷俘获。因此，闪存的密度增加，并且电荷控制性提高。

20. 发明申请

WO2012077951A3 FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING 审中-公开
标题翻译：闪光存储器使用切片效果和静电屏蔽
公开(公告)号：WO2012077951A3
公开(公告)日：2012-09-27
申请号：PCT/KR2011009364
申请日：2011-12-05
申请人： IUCF HYU , KIM TAE WHAN , YOU JOO HYUNG , KIM SUNG HO
发明人： KIM TAE WHAN , YOU JOO HYUNG , KIM SUNG HO
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L29/792 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extended to a tunneling insulation layer. Thus, a coupling phenomenon between adjacent gate stacks is minimized by electrostatic shielding.
摘要翻译：公开了一种使用边缘效果和静电屏蔽功能的闪存。通过边缘效应来控制相邻栅极堆叠之间的间隙，并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。因此，通过静电屏蔽使相邻栅极叠层之间的耦合现象最小化。

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