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1. 发明申请

WO2007059227A3 TECHNIQUE FOR PROVIDING A SEGMENTED ELECTROSTATIC LENS IN AN ION IMPLANTER 审中-公开
公开(公告)号：WO2007059227A3
公开(公告)日：2007-05-24
申请号：PCT/US2006/044374
申请日：2006-11-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , RADOVANOV, Svetlana B. , RENAU, Anthony , BUFF, James Steve
发明人： RADOVANOV, Svetlana B. , RENAU, Anthony , BUFF, James Steve
IPC分类号： H01J37/12 , H01J37/30 , H01J37/317
摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens (400) for use in an ion implanter. The lens may comprise an entrance electrode (409) biased at a first voltage potential/ wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode (406) biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode (404) located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments (404a, 404b, 404c) that are independently biased to manipulate energy and a shape of the ion beam.

2. 发明申请

WO2013148463A1 ION IMPLANTATION SYSTEM AND METHOD OF PROCESSING A SUBSTRATE 审中-公开
标题翻译：离子植入系统和处理基板的方法
公开(公告)号：WO2013148463A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/033314
申请日：2013-03-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： KOO, Bon-Woong , WHITE, Richard M. , RADOVANOV, Svetlana B. , DANIELS, Kevin M. , COBB, Eric R. , PITMAN, David W.
IPC分类号： H01J37/317
CPC分类号： H01L21/265 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/0825
摘要： Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracted. The extraction system positioned downstream of the ion source near the extraction aperture. A material source comprising a fist source containing first material, a second source containing the second material, and a first and second conduits, where the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and where the second conduit may be in communication with the second source. A first region outside of the ion source chamber provides the second material from the second source to the first region.
摘要翻译：用于处理衬底的技术可以用离子注入系统来实现，所述离子注入系统包括具有离子源室的离子源。离子源室具有限定离子产生区域和提取离子的离子产生区域的提取孔的壁。提取系统位于靠近提取孔的离子源的下游。一种材料源，包括包含第一材料的第一源，包含第二材料的第二源，以及第一和第二导管，其中第一导管可与第一源和离子源室连通，以从第一源和第二源提供第一材料离子源室的第一源，并且其中第二导管可以与第二源连通。离子源室外部的第一区域将第二材料从第二源提供到第一区域。

3. 发明申请

WO2016183137A1 APPARATUS AND METHOD FOR MULTILAYER DEPOSITION 审中-公开
标题翻译：多层沉积的装置和方法
公开(公告)号：WO2016183137A1
公开(公告)日：2016-11-17
申请号：PCT/US2016/031746
申请日：2016-05-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIKHANSKII, Alexandre , LEE, William Davis , RADOVANOV, Svetlana B.
IPC分类号： C23C14/48 , C23C14/22 , C23C14/34 , C23C14/50
CPC分类号： C23C14/46 , C23C14/221 , C23C14/3464 , H01J37/3411 , H01J37/3414 , H01J37/3417
摘要： An apparatus may include an extraction assembly comprising at least a first extraction aperture and second extraction aperture, the extraction assembly configured to extract at least a first ion beam and second ion beam from a plasma; a target assembly disposed adjacent the extraction assembly and including at least a first target portion comprising a first material and a second target portion comprising a second material, the first target portion and second target portion being disposed to intercept the first ion beam and second ion beam, respectively; and a substrate stage disposed adjacent the target assembly and configured to scan a substrate along a scan axis between a first point and a second point, wherein the first target portion and second target portion are separated from the first point by a first distance and second distance, respectively, the first distance being less than the second distance.
摘要翻译：一种设备可以包括提取组件，其包括至少第一提取孔和第二提取孔，所述提取组件被配置为从等离子体提取至少第一离子束和第二离子束; 设置在所述提取组件附近并且包括至少第一目标部分的目标组件，所述目标部分包括第一材料和包括第二材料的第二目标部分，所述第一目标部分和所述第二目标部分设置成拦截所述第一离子束和所述第二离子束，分别; 以及衬底台，其设置在所述目标组件附近并且被配置为沿第一点和第二点之间的扫描轴扫描衬底，其中所述第一目标部分和所述第二目标部分与所述第一点分离第一距离和第二距离第一距离小于第二距离。

4. 发明申请

WO2013148462A1 TECHNIQUE FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：处理基板的技术
公开(公告)号：WO2013148462A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/033310
申请日：2013-03-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： KOO, Bon-Woong , WHITE, Richard M. , RADOVANOV, Svetlana B. , DANIELS, Kevin M. , COBB, Eric R. , PITMAN, David W.
IPC分类号： C23C14/48 , H01J37/317
CPC分类号： H01L21/265 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/0825
摘要： Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.
摘要翻译：公开了用于处理衬底的技术。在一个示例性实施例中，该技术可以被实现为用于处理衬底的方法，所述方法包括：离子源的离子源室中的第一材料和第二材料的电离，所述第一材料是含硼（B）的材料，第二材料是含磷（P）的材料和含砷（As）的材料之一; 产生含有B的第一离子和含有P和As之一的第二离子; 以及从所述离子源室中提取所述第一和第二离子并将所述第一和第二离子引向所述衬底。

5. 发明申请

WO2019125597A1 ION BEAM QUALITY CONTROL USING A MOVABLE MASS RESOLVING DEVICE 审中-公开
公开(公告)号：WO2019125597A1
公开(公告)日：2019-06-27
申请号：PCT/US2018/057287
申请日：2018-10-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： KOO, Bon-Woong , LINDBERG, Robert C. , HERMANSON, Eric D. , SINCLAIR, Frank , CUCCHETTI, Antonella , MARTIN, Randy , JOHNSON, Michael D. , SAMOLOV, Ana , RADOVANOV, Svetlana B.
IPC分类号： H01J37/244 , H01J37/10 , H01J37/317
摘要： A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a mass resolving apparatus having a resolving aperture, in which the resolving aperture may be moved in the X and Z directions. Additionally, a controller is able to manipulate the mass analyzer and quadrupole lenses so that the crossover point of desired ions can also be moved in the X and Z directions. By manipulating the crossover point and the resolving aperture, the parameters of the ribbon ion beam may be manipulated to achieve a desired result. Movement of the crossover point in the X direction may affect the mean horizontal angle of the beamlets, while movement of the crossover point in the Z direction may affect the horizontal angular spread and beam current.

6. 发明申请

WO2014164441A1 METHOD OF IMPROVING ION BEAM QUALITY IN AN IMPLANT SYSTEM 审中-公开
标题翻译：改进植被系统中离子束质量的方法
公开(公告)号：WO2014164441A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/022430
申请日：2014-03-10
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： KOO, Bon-Woong , LEAVITT, Christopher J. , KURUNCZI, Peter F. , MILLER, Timothy J. , RADOVANOV, Svetlana B.
IPC分类号： H01L21/265 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/006
摘要： A system for improving ion beam quality is disclosed. According to one embodiment, the system comprises an ion source, having a chamber defined by a plurality of chamber walls; an RF antenna disposed on a first wall of the plurality of chamber walls; a second wall, opposite the first wall, the distance between the first wall and the second wall defining the height of the chamber; an aperture disposed on one of the plurality of chamber walls; a first gas inlet for introducing a first source gas to the chamber; and a second gas inlet for introducing a second source gas, different from the first source gas, to the chamber; wherein a first distance from the first gas inlet to the second wall is less than 35% of the height; and a second distance from the second gas inlet to the first wall is less than 35% of the height.
摘要翻译：公开了一种改善离子束质量的系统。根据一个实施例，系统包括离子源，其具有由多个室壁限定的室; 设置在所述多个室壁的第一壁上的RF天线; 与所述第一壁相对的第二壁，所述第一壁和所述第二壁之间的距离限定所述室的高度; 设置在所述多个室壁之一上的孔; 用于将第一源气体引入所述室的第一气体入口; 以及第二气体入口，用于将不同于第一源气体的第二源气体引入腔室; 其中从所述第一气体入口到所述第二壁的第一距离小于所述高度的35％; 并且从第二气体入口到第一壁的第二距离小于高度的35％。

7. 发明申请

WO2016160339A1 MULTI-APERTURE EXTRACTION SYSTEM FOR ANGLED ION BEAM 审中-公开
标题翻译：用于光束离子束的多孔提取系统
公开(公告)号：WO2016160339A1
公开(公告)日：2016-10-06
申请号：PCT/US2016/022595
申请日：2016-03-16
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIKHANSKII, Alexandre , RADOVANOV, Svetlana B. , LEE, William Davis
IPC分类号： H01L21/265
CPC分类号： H01J37/32412 , H01J37/32422 , H01J37/32697
摘要： An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created. The extraction aperture includes a plurality of rotatable plates. Ion beamlets are extracted through apertures defined by the plurality of rotatable plates. The degree to which these plates are rotated determines the angle of extraction for the extracted ion beam. These plates may be formed in a plurality of different shapes, which may increase the maximum extraction angle that is achievable. Additionally, electrodes may be disposed near the plates to affect the extraction angle.
摘要翻译：公开了一种用于创建用于植入衬底的成角度离子束的设备。该装置包括其中产生等离子体的等离子体室。提取孔包括多个可旋转板。离子束通过由多个可旋转板限定的孔提取。这些板旋转的程度决定了提取的离子束的提取角度。这些板可以形成为多个不同的形状，这可以增加可实现的最大提取角度。此外，电极可以设置在板附近以影响提取角度。

8. 发明申请

WO2014159523A1 SYSTEM AND METHOD FOR PLASMA CONTROL USING BOUNDARY ELECTRODE 审中-公开
标题翻译：使用边界电极进行等离子体控制的系统和方法
公开(公告)号：WO2014159523A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/024003
申请日：2014-03-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： RADOVANOV, Svetlana B. , GODET, Ludovic , ROCKWELL, Tyler , CAMPBELL, Chris
IPC分类号： H01J37/08
CPC分类号： H01J27/024 , H01J27/02
摘要： An ion source may include a chamber configured to house a plasma comprising ions to be directed to a substrate and an extraction power supply configured to apply an extraction terminal voltage to the plasma chamber with respect to a voltage of a substrate positioned downstream of the chamber. The system may further include a boundary electrode voltage supply configured to generate a boundary electrode voltage different than the extraction terminal voltage, and a boundary electrode disposed within the chamber and electrically coupled to the boundary electrode voltage supply, the boundary electrode configured to alter plasma potential of the plasma when the boundary electrode voltage is received.
摘要翻译：离子源可以包括被配置为容纳包含要被引导到衬底的离子的等离子体的等离子体，以及被配置为相对于位于腔室下游的衬底的电压将提取端子电压施加到等离子体室的提取电源。该系统还可以包括配置成产生不同于提取端电压的边界电极电压的边界电极电压源，以及设置在室内并电耦合到边界电极电压源的边界电极，边界电极被配置为改变等离子体电位接收边界电极电压时的等离子体。

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