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1. 发明申请

WO2017136096A1 APPARATUS AND METHOD FOR CONTAMINATION CONTROL IN ION BEAM APPARATUS 审中-公开
标题翻译：用于离子束装置中污染控制的装置和方法
公开(公告)号：WO2017136096A1
公开(公告)日：2017-08-10
申请号：PCT/US2017/012433
申请日：2017-01-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIKHANSKII, Alexandre , SCHEUER, Jay T. , LEE, William Davis
IPC分类号： H01J37/248 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/0213 , H01J2237/022 , H01J2237/151
摘要： An apparatus may include an ion source generating an ion beam, the ion source coupled to a first voltage. The apparatus may further include a stopping element disposed between the ion source and a substrate position; a stopping voltage supply coupled to the stopping element; and a control component to direct the stopping voltage supply to apply a stopping voltage to the stopping element, the stopping voltage being equal to or more positive than the first voltage when the ion beam comprises positive ions, and being equal to or more negative than the first voltage when the ion beam comprises negative ions, wherein at least a portion of the ion beam is deflected backwardly from an initial trajectory as deflected ions when the stopping voltage is applied to the stopping element.
摘要翻译：装置可以包括产生离子束的离子源，离子源耦合到第一电压。该装置还可以包括设置在离子源和基板位置之间的停止元件; 耦合到所述停止元件的停止电压供应器; 以及控制部件，用于指示所述停止电压供给以向所述停止元件施加停止电压，当所述离子束包括正离子时，所述停止电压等于或大于所述第一电压，并且等于或大于所述停止电压当所述离子束包括负离子时所述第一电压，其中当所述停止电压施加到所述停止元件时，所述离子束的至少一部分作为偏转离子从初始轨迹向后偏转。

2. 发明申请

WO2016160339A1 MULTI-APERTURE EXTRACTION SYSTEM FOR ANGLED ION BEAM 审中-公开
标题翻译：用于光束离子束的多孔提取系统
公开(公告)号：WO2016160339A1
公开(公告)日：2016-10-06
申请号：PCT/US2016/022595
申请日：2016-03-16
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIKHANSKII, Alexandre , RADOVANOV, Svetlana B. , LEE, William Davis
IPC分类号： H01L21/265
CPC分类号： H01J37/32412 , H01J37/32422 , H01J37/32697
摘要： An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created. The extraction aperture includes a plurality of rotatable plates. Ion beamlets are extracted through apertures defined by the plurality of rotatable plates. The degree to which these plates are rotated determines the angle of extraction for the extracted ion beam. These plates may be formed in a plurality of different shapes, which may increase the maximum extraction angle that is achievable. Additionally, electrodes may be disposed near the plates to affect the extraction angle.
摘要翻译：公开了一种用于创建用于植入衬底的成角度离子束的设备。该装置包括其中产生等离子体的等离子体室。提取孔包括多个可旋转板。离子束通过由多个可旋转板限定的孔提取。这些板旋转的程度决定了提取的离子束的提取角度。这些板可以形成为多个不同的形状，这可以增加可实现的最大提取角度。此外，电极可以设置在板附近以影响提取角度。

3. 发明申请

WO2016032822A1 BIAS ELECTRODES FOR TANDEM ACCELERATOR 审中-公开
标题翻译：用于加速器的偏置电极
公开(公告)号：WO2016032822A1
公开(公告)日：2016-03-03
申请号：PCT/US2015/045892
申请日：2015-08-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANG, Shengwu , LUPOLI, Christopher , LEE, William Davis , SINCLAIR, Frank , PIXLEY, James
IPC分类号： H01J37/317
CPC分类号： H01J37/3007 , H01J37/08 , H01J37/3171 , H01J2237/0473 , H01J2237/0815 , H05H5/063
摘要： A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.
摘要翻译：公开了一种具有改进性能的串联加速器和离子注入机。串联加速器包括多个输入电极，多个输出电极和设置在它们之间的高电压端子。高压端子包括剥离管。将中性分子注入汽提塔，从入射的负离子束中除去电子。所产生的正离子朝向多个输出电极加速。为了减少离开汽提塔的不需要的正离子的量，偏压电极设置在汽提塔管的入口和出口处。偏置电极偏置第二电压，大于施加到端子的第一电压。偏置电极排斥缓慢移动的正离子，防止它们离开剥离管并污染工件。

4. 发明申请

WO2017019335A1 CONTROLLING CONTAMINATION PARTICLE TRAJECTORY FROM A BEAM-LINE ELECTROSTATIC ELEMENT 审中-公开
标题翻译：从光束静电元件控制污染颗粒物
公开(公告)号：WO2017019335A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/042493
申请日：2016-07-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LEE, William Davis , LIKHANSKII, Alexandre
IPC分类号： H01L21/265 , H01J37/317 , H01L21/683
CPC分类号： H01J37/05 , H01J37/12 , H01J37/3171 , H01J2237/022 , H01J2237/028
摘要： Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. A beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. The trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element. In another approach, the trajectory is influenced by one or more geometric features of the beam-line electrostatic element.
摘要翻译：本文提供了用于从束线静电元件控制粒子轨迹的方法。沿着静电滤波器（EF）的光束线设置光束线静电元件，并且向束线静电元件供应电压以产生围绕光束线静电元件的静电场，搅动一层形成在束线静电元件上的污染颗粒。然后修改来自污染颗粒层的一组颗粒的轨迹，以将该组颗粒引导到EF内的期望位置。通过在光束线静电元件附近提供附加电极来控制轨迹，并且向附加电极提供电压以控制靠近光束线静电元件的局部静电场。在另一种方法中，轨迹受到束线静电元件的一个或多个几何特征的影响。

5. 发明申请

WO2017014948A1 SELECTIVE PROCESSING OF A WORKPIECE 审中-公开
标题翻译：选择性处理工作
公开(公告)号：WO2017014948A1
公开(公告)日：2017-01-26
申请号：PCT/US2016/041101
申请日：2016-07-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： AMATO, Mark R. , LEE, William Davis , RENO, Jillian
IPC分类号： H01L21/265 , H01L21/02 , H01L21/3065 , H01L21/324
CPC分类号： H01J37/3171 , C23C14/48 , H01J37/08 , H01J37/20 , H01J37/3026 , H01J2237/20214 , H01J2237/31761 , H01J2237/31766 , H01L21/265 , H01L21/425
摘要： Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition.
摘要翻译：公开了用于选择性处理工件的特定部分的系统和方法。例如，可以通过将离子束引导到工件上的第一位置来处理外部部分，其中离子束在两个第一位置处延伸超过工件的外边缘。然后工件相对于离子束绕其中心旋转，使得外部部分的某些区域暴露于离子束。然后将工件相对于离子束移动到第二位置并沿相反方向旋转，使得外部部分的所有区域暴露于离子束。该过程可以重复多次。离子束可以执行任何过程，例如离子注入，蚀刻或沉积。

6. 发明申请

WO2017131895A1 DUAL MATERIAL REPELLER 审中-公开
标题翻译：双材料驱动器
公开(公告)号：WO2017131895A1
公开(公告)日：2017-08-03
申请号：PCT/US2016/067548
申请日：2016-12-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LEE, William Davis , PEREL, Alexander S. , SPORLEDER, David P.
IPC分类号： H01J27/02 , H01J27/20
CPC分类号： H01J27/022 , H01J27/205
摘要： The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. The repeller includes a repeller head, which may be a disc shaped component, and a stem to support the head. The repeller head is made from a conductive material having a higher thermal conductivity than the stem. In this way, the temperature of the repeller head is maintained at a higher temperature than would otherwise be possible. The higher temperature limits the build-up of material on the repeller head, which improves the performance of the IHC ion source. In certain embodiments, the repeller head and the stem are connected using a press fit. Differences in the coefficient of thermal expansion of the repeller head and the stem may cause the press fit to become tighter at higher temperatures.
摘要翻译： IHC离子源包括在相对端具有阴极和排斥极的离子源室。排斥器由两个分立的部分组成，每个部分包含不同的材料。排斥器包括排斥器头，排斥器头可以是盘状组件，以及支撑头的杆。排斥头由具有比杆的导热率高的导电材料制成。通过这种方式，推斥头的温度保持在比其他情况下更高的温度。较高的温度限制了排斥头上材料的积聚，这提高了IHC离子源的性能。在某些实施例中，推斥头和杆使用压配合连接。排斥器头部和杆部的热膨胀系数的差异可能导致压配合在更高的温度下变得更紧密。

7. 发明申请

WO2016003618A1 APPARATUS FOR DYNAMIC TEMPERATURE CONTROL OF AN ION SOURCE 审中-公开
标题翻译：用于离子源动态温度控制的装置
公开(公告)号：WO2016003618A1
公开(公告)日：2016-01-07
申请号：PCT/US2015/035319
申请日：2015-06-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANEY, Craig R. , LEE, William Davis , BASSOM, Neil J.
IPC分类号： H01J37/08 , G05D23/00
CPC分类号： H01J27/022 , H01J37/08 , H01J2237/061
摘要： An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and/or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions.
摘要翻译：公开了一种用于控制离子源的温度的装置。离子源包括限定其中产生离子的室的多个壁。为了控制离子源的温度，在室外设置一个或多个隔热罩。隔热罩由高温和/或耐火材料制成，旨在将热量反射回离子源。在第一位置，这些隔热罩设置成将第一量的热量反射回离子源。在第二位置，这些隔热罩被设置成将更小的第二量的热量反射回离子源。在一些实施例中，隔热罩可以设置在位于第一位置和第二位置之间的一个或多个中间位置。

8. 发明申请

WO2016200668A1 IN-SITU PLASMA CLEANING OF PROCESS CHAMBER COMPONENTS 审中-公开
标题翻译：过程室组件的现场等离子体清洁
公开(公告)号：WO2016200668A1
公开(公告)日：2016-12-15
申请号：PCT/US2016/035418
申请日：2016-06-02
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC
发明人： ANGLIN, Kevin , LEE, William Davis , KURUNCZI, Peter , DOWNEY, Ryan , SCHEUER, Jay T. , LIKHANSKII, Alexandre , HOLBER, William M.
IPC分类号： H01J37/32 , C23C16/44 , H01J37/34
CPC分类号： H01J37/3171 , B08B7/0035 , H01J37/241 , H01J37/32862 , H01J37/3467 , H01J2237/022 , H01J2237/04756 , H01J2237/049 , H01J2237/057 , H01J2237/334 , H01J2237/335
摘要： Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
摘要翻译：本文提供了用于离子注入系统的一个或多个组分的原位等离子体清洗的方法。在一种方法中，组件可以包括具有一个或多个导电束光学器件的束线分量。该系统还包括用于在处理模式期间向组件提供第一电压和第一电流的电源，以及在清洁模式期间向组件提供第二电压和第二电流的电源。第二电压和电流可以并联地施加到部件的导电束光学器件，以选择性地（例如，单独地）在一个或多个导电束光学器件中的一个或多个上产生等离子体。该系统还可以包括用于调节供应给部件的蚀刻剂气体的喷射速率的流量控制器和用于调节部件的环境压力的真空泵。

9. 发明申请

WO2016183137A1 APPARATUS AND METHOD FOR MULTILAYER DEPOSITION 审中-公开
标题翻译：多层沉积的装置和方法
公开(公告)号：WO2016183137A1
公开(公告)日：2016-11-17
申请号：PCT/US2016/031746
申请日：2016-05-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIKHANSKII, Alexandre , LEE, William Davis , RADOVANOV, Svetlana B.
IPC分类号： C23C14/48 , C23C14/22 , C23C14/34 , C23C14/50
CPC分类号： C23C14/46 , C23C14/221 , C23C14/3464 , H01J37/3411 , H01J37/3414 , H01J37/3417
摘要： An apparatus may include an extraction assembly comprising at least a first extraction aperture and second extraction aperture, the extraction assembly configured to extract at least a first ion beam and second ion beam from a plasma; a target assembly disposed adjacent the extraction assembly and including at least a first target portion comprising a first material and a second target portion comprising a second material, the first target portion and second target portion being disposed to intercept the first ion beam and second ion beam, respectively; and a substrate stage disposed adjacent the target assembly and configured to scan a substrate along a scan axis between a first point and a second point, wherein the first target portion and second target portion are separated from the first point by a first distance and second distance, respectively, the first distance being less than the second distance.
摘要翻译：一种设备可以包括提取组件，其包括至少第一提取孔和第二提取孔，所述提取组件被配置为从等离子体提取至少第一离子束和第二离子束; 设置在所述提取组件附近并且包括至少第一目标部分的目标组件，所述目标部分包括第一材料和包括第二材料的第二目标部分，所述第一目标部分和所述第二目标部分设置成拦截所述第一离子束和所述第二离子束，分别; 以及衬底台，其设置在所述目标组件附近并且被配置为沿第一点和第二点之间的扫描轴扫描衬底，其中所述第一目标部分和所述第二目标部分与所述第一点分离第一距离和第二距离第一距离小于第二距离。

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