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1. 发明申请

US20180149962A1 SUBSTRATE WITH ELECTRICALLY CONDUCTIVE FILM, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180149962A1
公开(公告)日：2018-05-31
申请号：US15580331
申请日：2016-06-08
申请人： HOYA CORPORATION
发明人： Takumi KOBAYASHI , Kazuhiro HAMAMOTO , Tatsuo ASAKAWA , Tsutomu SHOKI
IPC分类号： G03F1/40 , G03F1/24 , G03F1/54
CPC分类号： G03F1/40 , G03F1/24 , G03F1/54
摘要： A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

2. 发明授权

US07614030B2 Scattering bar OPC application method for mask ESD prevention 有权
标题翻译：散射棒用于防止ESD防护的OPC应用方法
公开(公告)号：US07614030B2
公开(公告)日：2009-11-03
申请号：US11332928
申请日：2006-01-17
申请人： Chien-Ping Hsu
发明人： Chien-Ping Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/40 , G03F1/36
摘要： A method for reducing ESD on scattering bars in forming a mask containing a target pattern is provided. In one embodiment, the target pattern comprising features to be imaged onto a substrate is obtained. The mask is modified to include at least one scattering bar, the at least one scattering bar being placed adjacent to edges of the features to be imaged. Thereafter, the scattering bar is truncated into one or more scattering bar segments by determining an optimized length for each of the one or more scattering bar segments, wherein ESD on the one or more scattering bar segments is substantially reduced.
摘要翻译：提供了一种在形成包含目标图案的掩模时减少散射棒上的ESD的方法。在一个实施例中，获得包含要成像到衬底上的特征的目标图案。掩模被修改为包括至少一个散射棒，所述至少一个散射棒邻近要成像的特征的边缘放置。此后，通过确定一个或多个散射棒段中的每一个的优化长度，将散射棒截断成一个或多个散射棒段，其中一个或多个散射棒段上的ESD被显着减小。

3. 发明授权

US07514184B2 Reticle with antistatic coating 有权
标题翻译：带防静电涂层的光罩
公开(公告)号：US07514184B2
公开(公告)日：2009-04-07
申请号：US11092734
申请日：2005-03-28
申请人： Wei-Yu Su , Dong-Hsu Cheng , Li-Kong Turn
发明人： Wei-Yu Su , Dong-Hsu Cheng , Li-Kong Turn
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/40 , G03F1/62 , G03F1/64
摘要： A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl−. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.
摘要翻译：防静电标线片包括基板和图案化层，并被季胺（R4N）+ Cl-的抗静电导电膜覆盖。包括在框架上紧密拉伸的光学透明膜的防护薄膜组件也用类似材料的抗静电导电膜涂覆。具有防护薄膜的掩模版形成将掩模版与ESD隔离的屏蔽结构。

4. 发明授权

US07387855B2 Anti-ESD photomask blank 有权
标题翻译：防静电光掩模空白
公开(公告)号：US07387855B2
公开(公告)日：2008-06-17
申请号：US11032793
申请日：2005-01-10
申请人： Eric Chiang , Hung-Chun Wang , Min-Chih Hsieh , Ming-Tao Ho
发明人： Eric Chiang , Hung-Chun Wang , Min-Chih Hsieh , Ming-Tao Ho
IPC分类号： G03F1/00 , B32B17/10
CPC分类号： G03F1/78 , G03F1/40 , G03F1/50 , Y10T428/31616
摘要： An anti-electrostatic discharge photomask blank for fabrication of an anti-electrostatic discharge photomask is disclosed. The anti-electrostatic discharge photomask blank includes a mask substrate, a conductive layer provided on the mask substrate and an opaque patterning layer provided on the conductive layer. The conductive layer prevents charges of opposite polarity from accumulating on a photomask fabricated from the photomask blank, thus preventing electrostatic discharges on the photomask.
摘要翻译：公开了一种用于制造防静电放电光掩模的抗静电放电光掩模坯料。防静电放电光掩模坯料包括掩模基板，设置在掩模基板上的导电层和设置在导电层上的不透明图案层。导电层防止相反极性的电荷积聚在由光掩模坯料制成的光掩模上，从而防止光掩模上的静电放电。

5. 发明申请

US20070228525A1 SUBSTRATE EARTHING MECHANISM FOR USE IN CHARGED-PARTICLE BEAM WRITING APPARATUS 有权
标题翻译：用于充电颗粒光束装置的基板接地机构
公开(公告)号：US20070228525A1
公开(公告)日：2007-10-04
申请号：US11692414
申请日：2007-03-28
申请人： Yoshiro Yamanaka , Hideo Saito , Mitsunori Hayashi
发明人： Yoshiro Yamanaka , Hideo Saito , Mitsunori Hayashi
IPC分类号： H01L29/40 , G03C5/00 , A61N5/00 , G21G5/00 , G21K5/10 , H01J37/08
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/40 , G03F1/78 , H01J37/02 , H01J2237/022
摘要： A substrate earthing mechanism includes a plate-like spring extending toward a substrate in a direction parallel to a surface of the substrate, and a contact portion coupled to a tip end of the plate-like spring for coming into contact with the substrate to thereby provide electrical conduction therebetween. The plate spring and the contact portion are laid out so that a contact position at which the contact portion is in contact with the substrate and a layout position of the plate-like spring are substantially the same in position as each other in a direction at right angles to the substrate surface in the state that the plate spring is out of its elastic deformation.
摘要翻译：基板接地机构包括在与基板的表面平行的方向上朝向基板延伸的板状弹簧，以及与板状弹簧的前端部接合以与基板接触的接触部，其间导电。平板弹簧和接触部分布置成使得接触部分与基板接触的接触位置和板状弹簧的布局位置在右侧方向上彼此基本相同的位置在板弹簧脱离其弹性变形的状态下与基板表面成角度。

6. 发明申请

US20060115744A1 Method of producing a mask blank for photolithographic applications, and mask blank 审中-公开
标题翻译：制备用于光刻应用的掩模坯料的方法和掩模坯料
公开(公告)号：US20060115744A1
公开(公告)日：2006-06-01
申请号：US11198387
申请日：2005-08-08
申请人： Lutz Aschke , Frank Sobel , Guenter Hess , Hans Becker , Markus Renno , Frank Schmidt , Oliver Goetzberger
发明人： Lutz Aschke , Frank Sobel , Guenter Hess , Hans Becker , Markus Renno , Frank Schmidt , Oliver Goetzberger
IPC分类号： G03F1/00 , B05D1/04 , B32B9/00 , B32B17/10 , B32B17/06
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/40 , Y10T428/31616
摘要： The invention relates to a method of producing a mask blank (1) for photolithographic applications, particularly in EUV lithography, comprising the steps of: providing a substrate (2) which has a front side (4) and a rear side (3); depositing an electrically conductive layer (5) on the rear side of the substrate; depositing a coating on the front side of the substrate, wherein the coating comprises at least a first layer (6) and a second layer (9); and structuring the coating (6, 9) for photolithographic applications; wherein a respective handling area (22; 22a-22c) is formed on the front side (4) at least at one predefined location, said handling area not being structured for photolithographic applications and being designed for the handling of the mask blank (1) by means of a mechanical clamp or handling device, and wherein the first layer (6) is exposed in the respective handling area (22; 22a-22c) so that, when the mask blank (1) is handled from the front side, the mechanical clamp or handling device bears against the first layer (6). The invention furthermore relates to a corresponding mask blank.
摘要翻译：本发明涉及一种制备用于光刻应用的掩模板（1）的方法，特别是在EUV光刻中，包括以下步骤：提供具有前侧（4）和后侧（3）的基板（2）在所述衬底的后侧上沉积导电层（5）; 在所述基底的正面上沉积涂层，其中所述涂层至少包括第一层（6）和第二层（9）; 并构造用于光刻应用的涂层（6,9）; 其中至少在一个预定位置处在前侧（4）上形成相应的操作区域（22; 22a-22c），所述操作区域不被构造用于光刻应用并且被设计用于处理掩模坯料（ 1）通过机械夹具或处理装置，并且其中第一层（6）暴露在相应的处理区域（22; 22a-22c）中，使得当掩模坯料（1）从前侧，机械夹具或处理装置抵靠第一层（6）。本发明还涉及相应的掩模坯料。

7. 发明申请

US20060113280A1 Partial edge bead removal to allow improved grounding during e-beam mask writing 有权
公开(公告)号：US20060113280A1
公开(公告)日：2006-06-01
申请号：US11333678
申请日：2006-01-17
申请人： J. Rolfson
发明人： J. Rolfson
IPC分类号： C23F1/00
CPC分类号： G03F1/40 , G03F1/86
摘要： A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.

8. 发明授权

US07029800B2 Reticle with antistatic coating 失效
标题翻译：带防静电涂层的光罩
公开(公告)号：US07029800B2
公开(公告)日：2006-04-18
申请号：US10273682
申请日：2002-10-18
申请人： Wei-Yu Su , Dong-Hsu Cheng , Li-Kong Turn
发明人： Wei-Yu Su , Dong-Hsu Cheng , Li-Kong Turn
IPC分类号： G03F9/00 , A47G1/12
CPC分类号： G03F1/64 , G03F1/40 , G03F1/48
摘要： A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl−. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.
摘要翻译：防静电标线片包括基材和图案化层，并被季胺（R 4 N N）的抗静电导电膜覆盖。 >。包括在框架上紧密拉伸的光学透明膜的防护薄膜组件也用类似材料的抗静电导电膜涂覆。具有防护薄膜的掩模版形成将掩模版与ESD隔离的屏蔽结构。

9. 发明申请

US20040234868A1 Novel modification of mask blank to avoid charging effect 有权
标题翻译：面罩空白的新颖修改，避免充电效果
公开(公告)号：US20040234868A1
公开(公告)日：2004-11-25
申请号：US10441888
申请日：2003-05-20
发明人： Cheng-ming Lin
IPC分类号： B32B009/00 , G03F009/00 , G03C005/00 , B32B017/06
CPC分类号： G03F1/40 , C23C14/048 , G03F1/54 , G03F1/78
摘要： A blank mask for photomasking patterns on an integrated circuit comprises a non-conductive substrate and a layer of conductive material deposited on the substrate covering substantially the entire surface of said substrate. Methods for preventing charge accumulation on a non-conductive region of a mask, which is not covered by a layer of conductive material, are provided. One method comprises controlling electron beams to prevent the beams from striking an outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the mask. The outer region comprises an area beginning from an edge of the mask and ending at 2 to 6 mm inward from the edge. Another method comprises using a blocker to prevent electron beams from hitting the outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the substrate.
摘要翻译：用于集成电路上的光掩模图案的空白掩模包括非导电衬底和沉积在衬底上的基本覆盖所述衬底的整个表面的导电材料层。提供了防止未被导电材料层覆盖的掩模的非导电区域上的电荷积聚的方法。一种方法包括在图案化掩模上的预定特征时，控制电子束以防止光束撞击外部区域超过外部区域的90％以上的区域。外部区域包括从掩模的边缘开始并从边缘向内延伸2至6mm的区域。另一种方法包括当图案化衬底上的预定特征时，使用阻挡剂来防止电子束撞击外部区域超过外部区域的90％的面积。

10. 发明授权

US06803156B2 Electrostatic damage (ESD) protected photomask 失效
标题翻译：静电损伤（ESD）保护光掩模
公开(公告)号：US06803156B2
公开(公告)日：2004-10-12
申请号：US09920504
申请日：2001-08-01
申请人： Shahzad Akbar
发明人： Shahzad Akbar
IPC分类号： G03F900
CPC分类号： G03F1/40
摘要： A photomask (8) protected against electrostatic damage and a method of manufacturing such a photomask is disclosed. The photomask (8) comprises a transparent substrate (10) on which is deposited an opaque pattern such as lines (12), (14), (16) and (18). A transparent conductive film (30) is deposited over the substrate (10) and pattern such that the various portions of the pattern (lines (12), (14), (16) and (18)) are all maintained at the same electrical potential thereby preventing damage due to an electrostatic discharge.
摘要翻译：公开了防止静电损伤的光掩模（8）和制造这种光掩模的方法。光掩模（8）包括透明基板（10），在其上沉积不透明图案，例如线（12），（14），（16）和（18）。在衬底（10）上沉积透明导电膜（30）并且使图案（线（12），（14），（16）和（18））的各个部分全部保持在相同的电从而防止由静电放电引起的损坏。

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