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1. 发明授权

US10018905B2 Phase shift blankmask and photomask 有权
公开(公告)号：US10018905B2
公开(公告)日：2018-07-10
申请号：US14945686
申请日：2015-11-19
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/26 , G03F1/58
CPC分类号： G03F1/26 , G03F1/58
摘要： Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm.To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.

2. 发明授权

US09482940B2 Blankmask and photomask 有权
标题翻译：坯料和光掩模
公开(公告)号：US09482940B2
公开(公告)日：2016-11-01
申请号：US14503977
申请日：2014-10-01
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Chang-Jun Kim , See-Jun Jeong , Kyu-Jin Jang
IPC分类号： G03F1/46 , G03F1/38 , G03F1/54 , G03F1/58
CPC分类号： G03F1/46 , G03F1/38 , G03F1/54 , G03F1/58
摘要： Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeF2 gas in an electron-beam repair process.
摘要翻译：本发明提供一种光掩模，其具有通过形成空白掩模制造的半波长为32nm以下（特别是半波长为22nm以下）的高分辨率图案，其中，防伪膜和在透明基板上形成相对于防光薄膜具有小厚度和高蚀刻选择性的硬膜。通过调整构成防光膜的金属，硅（Si）和轻元素的组成比，可以获得高质量的光掩模，以抑制由电子束修复工艺中的XeF 2气体引起的图案的损坏。

3. 发明授权

US11579521B2 Reflective type blankmask and photomask for EUV 有权
公开(公告)号：US11579521B2
公开(公告)日：2023-02-14
申请号：US17144506
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong
IPC分类号： G03F1/24
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.

4. 发明授权

US11940725B2 Phase shift blankmask and photomask for EUV lithography 有权
公开(公告)号：US11940725B2
公开(公告)日：2024-03-26
申请号：US17543534
申请日：2021-12-06
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Yong-Dae Kim , Jong-Hwa Lee , Chul-Kyu Yang , Min-Kwang Park , Mi-Kyung Woo
IPC分类号： G03F1/32 , G03F1/24
CPC分类号： G03F1/32 , G03F1/24
摘要： A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

5. 发明授权

US11360377B2 Half-tone attenuated phase shift blankmask and photomask for EUV lithography 有权
公开(公告)号：US11360377B2
公开(公告)日：2022-06-14
申请号：US17079120
申请日：2020-10-23
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , See-Jun Jeong , Chul-Kyu Yang
IPC分类号： G03F1/24 , G03F1/32
摘要： The disclosure relates to a half-toned attenuated shift blankmask for extreme ultraviolet lithography including: a reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorbing film that are sequentially provided on a transparent substrate. The phase shift film has a high reflectance of 20% or more, so characteristics of NILS and MEEF are improved during wafer printing.

6. 发明授权

US11467485B2 Blankmask and photomask for extreme ultraviolet lithography 有权
公开(公告)号：US11467485B2
公开(公告)日：2022-10-11
申请号：US17090603
申请日：2020-11-05
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong , Gyeong-Won Seo
IPC分类号： G03F1/24 , G03F1/38 , G03F1/48
摘要： A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.

7. 发明授权

US10942445B2 Blankmask and photomask, and methods of fabricating the same 有权
公开(公告)号：US10942445B2
公开(公告)日：2021-03-09
申请号：US16213863
申请日：2018-12-07
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi
IPC分类号： G03F1/50
摘要： A blankmask according to the present disclosure includes a light-shielding film provided on a transparent substrate; and a hard mask film provided on the light-shielding film and comprising molybdenum chromium (MoCr). Thus, the hard mask film has not only an enhanced etching speed but also sufficient etching resistance to fluorine (F)-based dry etching, so that an etching load against a resist film can be decreased and a hard mask film pattern and a light-shielding film pattern can be improved in a line edge roughness (LER), thereby forming a photomask for high-precision pattern printing.

8. 发明授权

US09551925B2 Blankmask and photomask using the same 有权
标题翻译： Blankmask和光掩模使用相同
公开(公告)号：US09551925B2
公开(公告)日：2017-01-24
申请号：US14604247
申请日：2015-01-23
申请人： S&S TECH CO., LTD
发明人： Kee-Soo Nam , Chul-Kyu Yang , Geung-Won Kang , Cheol Shin , Jong-Hwa Lee , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/48 , G03F1/26 , G03F1/80
CPC分类号： G03F1/48 , G03F1/26 , G03F1/80
摘要： A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.
摘要翻译：提供了一个空白掩码和使用它的光掩模。空白掩模可用于防止在通过形成保护膜制造光掩模之后遮光膜或相移膜的图案的横向，顶部和底部表面的厚度损失，所述保护膜具有相对于在遮光膜或相移膜上的硬膜或遮光膜的图案，可以防止在遮光膜或相移膜下形成的相移膜的损失，设置在硬膜下方的遮光膜或遮光膜的图案在洗涤过程中进行，并且在制造光掩模的方法中去除硬膜的图案的过程，从而确保厚度均匀性。

9. 发明授权

US11815801B2 Reflective type blankmask and photomask for EUV 有权
公开(公告)号：US11815801B2
公开(公告)日：2023-11-14
申请号：US17144416
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong
IPC分类号： G03F1/24 , G03F1/58 , G03F1/40 , H01L21/033
CPC分类号： G03F1/24 , G03F1/40 , G03F1/58 , H01L21/0332 , H01L21/0337
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.

10. 发明授权

US10036947B2 Blankmask and photomask using the same 有权
公开(公告)号：US10036947B2
公开(公告)日：2018-07-31
申请号：US14878419
申请日：2015-10-08
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi , Chang-Jun Kim , Young-Jo Jeon
IPC分类号： G03F1/26 , G03F1/46 , G03F1/54 , G03F1/58
CPC分类号： G03F1/26 , G03F1/46 , G03F1/54 , G03F1/58
摘要： Disclosed are a blankmask and a photomask, in which compositions of metal and light elements of a light-shielding film are controlled so that the light-shielding film can guarantee a light-shielding efficiency, increase an etching speed, become thinner, and have a minimum sheet-resistance. To this end, the blankmask according to the present invention includes at least a light-shielding film on a transparent substrate, and the light-shielding film includes a first light-shielding layer adjacent to the transparent substrate and a second light-shielding layer formed on the first light-shielding layer, in which the first and the second light-shielding film contains chrome (Cr) and molybdenum (Mo).

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