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1. 发明授权

US11219115B2 EUV collector contamination prevention 有权
公开(公告)号：US11219115B2
公开(公告)日：2022-01-04
申请号：US16839526
申请日：2020-04-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Fa Wu , Tzung-Chi Fu , Chun Che Lin , Po-Chung Cheng , Huai-Tei Yang
IPC分类号： H05G2/00
摘要： An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

2. 发明申请

US20150220006A1 Method and Apparatus For Maintaining Depth of Focus 有权
标题翻译：保持焦点深度的方法和装置
公开(公告)号：US20150220006A1
公开(公告)日：2015-08-06
申请号：US14682436
申请日：2015-04-09
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chang-Tsun Hsieh , Chih-Ming Ke , Fu-Jye Liang , Li-Jui Chen , Tzung-Chi Fu
IPC分类号： G03F7/20
CPC分类号： G03F7/70616 , G02B7/28 , G03F7/70575 , G03F7/70641 , G03F9/70 , G03F9/7026
摘要： A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.
摘要翻译：一种方法包括将辐射束沿着光轴引向工件支撑件，在第一时间测量光束的光谱以获得第一分布，在第二时间测量光束的光谱以获得第二分布，确定两个轮廓之间的光谱差异，并且基于该差异来调整沿着光轴的工件支撑件的位置。不同的方面涉及一种具有工件支撑件的装置，将导光束沿着光轴朝向工件支撑件的光束引导结构，光谱测量结构，其在第一次和第二次测量光束的光谱以获得相应的第一和第二轮廓，确定两个轮廓之间的差异的处理结构，以及基于该差异来调整沿着光轴的工件支撑件的位置的支撑调整结构。

3. 发明授权

US09025130B2 Method and apparatus for maintaining depth of focus 有权
标题翻译：保持焦点深度的方法和装置
公开(公告)号：US09025130B2
公开(公告)日：2015-05-05
申请号：US13964931
申请日：2013-08-12
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chang-Tsun Hsieh , Fu-Jye Liang , Tzung-Chi Fu , Li-Jui Chen , Chih-Ming Ke
IPC分类号： G03F9/00 , G02B7/28 , G03F7/20
CPC分类号： G03F7/70616 , G02B7/28 , G03F7/70575 , G03F7/70641 , G03F9/70 , G03F9/7026
摘要： A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.
摘要翻译：一种方法包括将辐射束沿着光轴引向工件支撑件，在第一时间测量光束的光谱以获得第一分布，在第二时间测量光束的光谱以获得第二分布，确定两个轮廓之间的光谱差异，并且基于该差异来调整沿着光轴的工件支撑件的位置。不同的方面涉及一种具有工件支撑件的装置，将导光束沿着光轴朝向工件支撑件的光束引导结构，光谱测量结构，其在第一次和第二次测量光束的光谱以获得相应的第一和第二轮廓，确定两个轮廓之间的差异的处理结构，以及基于该差异来调整沿着光轴的工件支撑件的位置的支撑调整结构。

4. 发明申请

US20200236768A1 EUV Collector Contamination Prevention 审中-公开
公开(公告)号：US20200236768A1
公开(公告)日：2020-07-23
申请号：US16839526
申请日：2020-04-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Fa Wu , Tzung-Chi Fu , Chun Che Lin , Po-Chung Cheng , Huai-Tei Yang
IPC分类号： H05G2/00
摘要： An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

5. 发明申请

US20160062250A1 Lithography Process and System with Enhanced Overlay Quality 审中-公开
标题翻译：平版印刷工艺和具有增强叠加质量的系统
公开(公告)号：US20160062250A1
公开(公告)日：2016-03-03
申请号：US14471653
申请日：2014-08-28
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chi-Cheng Hung , Wei-Liang Lin , Yung-Sung Yen , Chun-Kuang Chen , Ru-Gun Liu , Tsai-Sheng Gau , Tzung-Chi Fu , Ming-Sen Tung , Fu-Jye Liang , Li-Jui Chen , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70258 , G03F7/705
摘要： The present disclosure provides a method. The method includes forming a resist layer on a patterned substrate; collecting first overlay data from the patterned substrate; determining an overlay compensation based on mapping of second overlay data from an integrated circuit (IC) pattern to the first overlay data from the patterned substrate; performing a compensation process to a lithography system according to the overlay compensation; and thereafter performing a lithography exposing process to the resist layer by the lithography system, thereby imaging the IC pattern to the resist layer.
摘要翻译：本公开提供了一种方法。该方法包括在图案化衬底上形成抗蚀剂层; 从图案化的衬底收集第一重叠数据; 基于来自所述图案化衬底的从所述集成电路（IC）图案到所述第一覆盖数据的第二覆盖数据的映射来确定覆盖补偿; 根据覆盖补偿对光刻系统进行补偿处理; 然后通过光刻系统对抗蚀剂层进行光刻曝光处理，从而将IC图案成像到抗蚀剂层。

6. 发明授权

US11483918B2 Light source for lithography exposure process 有权
公开(公告)号：US11483918B2
公开(公告)日：2022-10-25
申请号：US17239826
申请日：2021-04-26
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chieh Hsieh , Shang-Chieh Chien , Chun-Chia Hsu , Bo-Tsun Liu , Tzung-Chi Fu , Li-Jui Chen , Po-Chung Cheng
IPC分类号： H05G2/00 , G03F7/20
摘要： A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the operation of exciting the targets with the laser generator includes: irradiating a pre-pulse laser on the targets to expand the targets; detecting conditions of expanded targets; and adjusting at least one parameter of the laser generator according to the measured period of time and the conditions when the measured period of time is different from a predetermined value. The parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

7. 发明授权

US11333983B2 Light source, EUV lithography system, and method for generating EUV radiation 有权
公开(公告)号：US11333983B2
公开(公告)日：2022-05-17
申请号：US17077410
申请日：2020-10-22
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Chi Yang , Ssu-Yu Chen , Shang-Chieh Chien , Chieh Hsieh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
IPC分类号： G03F7/20 , H05G2/00
摘要： A light source for EUV is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide first laser pulses according to a control signal to irradiate the target droplets in the source vessel. The controller is configured to provide the control signal according to at least two of process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. When the average value or the standard deviation of the temperature of the source vessel and the droplet positions of the target droplets exceed the predetermined range, the controller is configured to provide the control signal to the laser generator to stop providing the first laser pulses.

8. 发明授权

US11320733B2 Reticle with conductive material structure 有权
公开(公告)号：US11320733B2
公开(公告)日：2022-05-03
申请号：US17066181
申请日：2020-10-08
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Hsiao-Lun Chang , Chueh-Chi Kuo , Tsung-Yen Lee , Tzung-Chi Fu , Li-Jui Chen , Po-Chung Cheng , Che-Chang Hsu
IPC分类号： G03F1/40 , G03F1/66 , G03F1/24 , G03F1/38
摘要： A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.

9. 发明申请

US20190335571A1 EUV Collector Contamination Prevention 审中-公开
公开(公告)号：US20190335571A1
公开(公告)日：2019-10-31
申请号：US15967153
申请日：2018-04-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Fa Wu , Tzung-Chi Fu , Chun-Che Lin , Po-Chung Cheng , Huai-Tei Yang
IPC分类号： H05G2/00
摘要： An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream, EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

10. 发明授权

US10146141B2 Lithography process and system with enhanced overlay quality 有权
公开(公告)号：US10146141B2
公开(公告)日：2018-12-04
申请号：US14471653
申请日：2014-08-28
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chi-Cheng Hung , Wei-Liang Lin , Yung-Sung Yen , Chun-Kuang Chen , Ru-Gun Liu , Tsai-Sheng Gau , Tzung-Chi Fu , Ming-Sen Tung , Fu-Jye Liang , Li-Jui Chen , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： G03F7/20
摘要： The present disclosure provides a method. The method includes forming a resist layer on a patterned substrate; collecting first overlay data from the patterned substrate; determining an overlay compensation based on mapping of second overlay data from an integrated circuit (IC) pattern to the first overlay data from the patterned substrate; performing a compensation process to a lithography system according to the overlay compensation; and thereafter performing a lithography exposing process to the resist layer by the lithography system, thereby imaging the IC pattern to the resist layer.

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