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1. 发明授权

US10036947B2 Blankmask and photomask using the same 有权
公开(公告)号：US10036947B2
公开(公告)日：2018-07-31
申请号：US14878419
申请日：2015-10-08
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi , Chang-Jun Kim , Young-Jo Jeon
IPC分类号： G03F1/26 , G03F1/46 , G03F1/54 , G03F1/58
CPC分类号： G03F1/26 , G03F1/46 , G03F1/54 , G03F1/58
摘要： Disclosed are a blankmask and a photomask, in which compositions of metal and light elements of a light-shielding film are controlled so that the light-shielding film can guarantee a light-shielding efficiency, increase an etching speed, become thinner, and have a minimum sheet-resistance. To this end, the blankmask according to the present invention includes at least a light-shielding film on a transparent substrate, and the light-shielding film includes a first light-shielding layer adjacent to the transparent substrate and a second light-shielding layer formed on the first light-shielding layer, in which the first and the second light-shielding film contains chrome (Cr) and molybdenum (Mo).

2. 发明授权

US09851632B2 Phase-shift blankmask and photomask 有权
公开(公告)号：US09851632B2
公开(公告)日：2017-12-26
申请号：US14804568
申请日：2015-07-21
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Chul-Kyu Yang , Jong-Hwa Lee , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/26
CPC分类号： G03F1/26
摘要： Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

3. 发明申请

US20150212403A1 MASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：掩模空白，照相机及其制造方法
公开(公告)号：US20150212403A1
公开(公告)日：2015-07-30
申请号：US14377941
申请日：2012-10-26
申请人： S&S Tech Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Jong-Hwa Lee , Chul-Kyu Yang , Soon-Gi Kwon
IPC分类号： G03F1/26 , G03F1/80 , G03F1/76
CPC分类号： G03F1/26 , G03F1/32 , G03F1/50 , G03F1/76 , G03F1/80
摘要： Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.
摘要翻译：提供一种制造光掩模的方法，其中使用硬掩模膜图案作为蚀刻掩模，用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该掩模的光掩模。在该方法中，用于图形化硬掩模膜的抗蚀剂膜可以形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。因此，由于使用遮光膜图案，光密度可以维持在3.0，从而提高图案的分辨率和精度，降低负载效果，并且改善关键尺寸（CD）特征，例如CD均匀性和CD线性。

4. 发明授权

US11579521B2 Reflective type blankmask and photomask for EUV 有权
公开(公告)号：US11579521B2
公开(公告)日：2023-02-14
申请号：US17144506
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong
IPC分类号： G03F1/24
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.

5. 发明授权

US09389500B2 Mask blank, photomask, and method for manufacturing same 有权
标题翻译：掩模空白，光掩模及其制造方法
公开(公告)号：US09389500B2
公开(公告)日：2016-07-12
申请号：US14377941
申请日：2012-10-26
申请人： S&S Tech Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Jong-Hwa Lee , Chul-Kyu Yang , Soon-Gi Kwon
IPC分类号： G03F1/26 , G03F1/76 , G03F1/80 , G03F1/50
CPC分类号： G03F1/26 , G03F1/32 , G03F1/50 , G03F1/76 , G03F1/80
摘要： Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.
摘要翻译：提供一种制造光掩模的方法，其中使用硬掩模膜图案作为蚀刻掩模，用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该掩模的光掩模。在该方法中，用于图形化硬掩模膜的抗蚀剂膜可以形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。因此，由于使用遮光膜图案，光密度可以维持在3.0，从而提高图案的分辨率和精度，降低负载效果，并且改善关键尺寸（CD）特征，例如CD均匀性和CD线性。

6. 发明授权

US11467485B2 Blankmask and photomask for extreme ultraviolet lithography 有权
公开(公告)号：US11467485B2
公开(公告)日：2022-10-11
申请号：US17090603
申请日：2020-11-05
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong , Gyeong-Won Seo
IPC分类号： G03F1/24 , G03F1/38 , G03F1/48
摘要： A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.

7. 发明授权

US10942445B2 Blankmask and photomask, and methods of fabricating the same 有权
公开(公告)号：US10942445B2
公开(公告)日：2021-03-09
申请号：US16213863
申请日：2018-12-07
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi
IPC分类号： G03F1/50
摘要： A blankmask according to the present disclosure includes a light-shielding film provided on a transparent substrate; and a hard mask film provided on the light-shielding film and comprising molybdenum chromium (MoCr). Thus, the hard mask film has not only an enhanced etching speed but also sufficient etching resistance to fluorine (F)-based dry etching, so that an etching load against a resist film can be decreased and a hard mask film pattern and a light-shielding film pattern can be improved in a line edge roughness (LER), thereby forming a photomask for high-precision pattern printing.

8. 发明授权

US09551925B2 Blankmask and photomask using the same 有权
标题翻译： Blankmask和光掩模使用相同
公开(公告)号：US09551925B2
公开(公告)日：2017-01-24
申请号：US14604247
申请日：2015-01-23
申请人： S&S TECH CO., LTD
发明人： Kee-Soo Nam , Chul-Kyu Yang , Geung-Won Kang , Cheol Shin , Jong-Hwa Lee , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/48 , G03F1/26 , G03F1/80
CPC分类号： G03F1/48 , G03F1/26 , G03F1/80
摘要： A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.
摘要翻译：提供了一个空白掩码和使用它的光掩模。空白掩模可用于防止在通过形成保护膜制造光掩模之后遮光膜或相移膜的图案的横向，顶部和底部表面的厚度损失，所述保护膜具有相对于在遮光膜或相移膜上的硬膜或遮光膜的图案，可以防止在遮光膜或相移膜下形成的相移膜的损失，设置在硬膜下方的遮光膜或遮光膜的图案在洗涤过程中进行，并且在制造光掩模的方法中去除硬膜的图案的过程，从而确保厚度均匀性。

9. 发明授权

US10018905B2 Phase shift blankmask and photomask 有权
公开(公告)号：US10018905B2
公开(公告)日：2018-07-10
申请号：US14945686
申请日：2015-11-19
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/26 , G03F1/58
CPC分类号： G03F1/26 , G03F1/58
摘要： Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm.To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.

10. 发明授权

US09482940B2 Blankmask and photomask 有权
标题翻译：坯料和光掩模
公开(公告)号：US09482940B2
公开(公告)日：2016-11-01
申请号：US14503977
申请日：2014-10-01
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Chang-Jun Kim , See-Jun Jeong , Kyu-Jin Jang
IPC分类号： G03F1/46 , G03F1/38 , G03F1/54 , G03F1/58
CPC分类号： G03F1/46 , G03F1/38 , G03F1/54 , G03F1/58
摘要： Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeF2 gas in an electron-beam repair process.
摘要翻译：本发明提供一种光掩模，其具有通过形成空白掩模制造的半波长为32nm以下（特别是半波长为22nm以下）的高分辨率图案，其中，防伪膜和在透明基板上形成相对于防光薄膜具有小厚度和高蚀刻选择性的硬膜。通过调整构成防光膜的金属，硅（Si）和轻元素的组成比，可以获得高质量的光掩模，以抑制由电子束修复工艺中的XeF 2气体引起的图案的损坏。

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