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1. 发明申请

US20090304994A1 Epitaxially coated silicon wafer with 110 orientation and method for producing it 失效
标题翻译：具有110取向的外延涂覆硅晶片及其制造方法
公开(公告)号：US20090304994A1
公开(公告)日：2009-12-10
申请号：US12454906
申请日：2009-05-26
申请人： Erich Daub , Hans Oelkrug , Oliver Schmelmer
发明人： Erich Daub , Hans Oelkrug , Oliver Schmelmer
IPC分类号： B32B9/04 , H01L21/20
CPC分类号： C30B29/06 , C30B15/36 , C30B25/02 , H01L21/02008 , H01L21/02027 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02587 , H01L21/02609 , Y10T428/24355
摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.
摘要翻译：外延涂覆的硅晶片包括相对于{110}晶面的取向不平衡的平面，其中单晶硅的<110>方向与晶片表面的法线倾斜角度θ和倾斜的＆lt; 110＆gt;方向在晶片中形成方向<-110>的角度φ，θ由0 <θθ= 3°和45°<= phi <= 90°给出，以及对于所有对称等效方向。

2. 发明授权

US08133318B2 Epitaxially coated silicon wafer with 110 orientation and method for producing it 失效
标题翻译：具有110取向的外延涂覆硅晶片及其制造方法
公开(公告)号：US08133318B2
公开(公告)日：2012-03-13
申请号：US12454906
申请日：2009-05-26
申请人： Erich Daub , Hans Oelkrug , Oliver Schmelmer
发明人： Erich Daub , Hans Oelkrug , Oliver Schmelmer
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B23/00 , C30B25/00 , C30B28/12
CPC分类号： C30B29/06 , C30B15/36 , C30B25/02 , H01L21/02008 , H01L21/02027 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02587 , H01L21/02609 , Y10T428/24355
摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.
摘要翻译：外延涂覆的硅晶片包括相对于{110}晶面取向取向的平面，其中单晶硅的<110>方向倾斜角度＆amp;θ; 从正常到晶片表面和倾斜<110>方向的投影形成一个角度＆在晶圆方向<-110>和＆thetas; 由0＆nlE;＆thetas;＆nlE; 3°和45°＆nlE;＆phgr;＆nlE; 90°，以及所有对称等效方向。

3. 发明申请

US20070163485A1 Single crystal and semiconductor wafer and apparatus and method for producing a single crystal 审中-公开
标题翻译：单晶和半导体晶片及其制造方法
公开(公告)号：US20070163485A1
公开(公告)日：2007-07-19
申请号：US11655509
申请日：2007-01-18
申请人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
发明人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
IPC分类号： C30B15/00 , C30B11/00 , C30B21/06
CPC分类号： C30B35/00 , C30B15/00 , Y10T117/10 , Y10T117/1064
摘要： The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3.
摘要翻译：本公开涉及一种用于制造半导体材料的单晶的装置和方法。该装置包括一个室和一个坩埚，该坩埚被布置在室中并由坩埚加热器封闭，用于屏蔽增长的单晶的辐射屏蔽以及坩埚加热器和室的内壁之间的绝热。该装置可以包括密封内壁和隔热层之间的间隙的弹性密封件，并且形成用于将气态铁羰基转移到单晶的障碍物。本公开还涉及通过使用该装置制造半导体材料的单晶的方法，所制造的单晶和从其切下的半导体晶片。单晶和半导体晶片的区别在于边缘区域，其从圆周延伸到直径为R-5mm的距离，直到单晶或半导体晶片，并具有铁浓度，其中铁浓度边缘区域小于1×10 9原子/ cm 3。

4. 发明授权

US5487354A Method for pulling a silicon single crystal 失效
标题翻译：拉硅单晶的方法
公开(公告)号：US5487354A
公开(公告)日：1996-01-30
申请号：US349397
申请日：1994-12-05
申请人： Wilfried von Ammon , Erich Dornberger , Hans Oelkrug , Peter Gerlach , Franz Segieth
发明人： Wilfried von Ammon , Erich Dornberger , Hans Oelkrug , Peter Gerlach , Franz Segieth
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/208 , C30B15/10
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1052
摘要： A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.
摘要翻译：拉伸硅单晶的方法具有以相对于保持在坩埚中的硅熔体的垂直方向上的最大拉伸速度限定的速度拉伸单晶。最大牵引速度的值与生长的单晶中的轴向温度梯度近似成比例。

5. 发明授权

US08282761B2 Method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers 有权
标题翻译：同时将半导体材料的复合棒切割成多个晶片的方法
公开(公告)号：US08282761B2
公开(公告)日：2012-10-09
申请号：US12579127
申请日：2009-10-14
申请人： Alexander Rieger , Hans Oelkrug , Josef Schuster
发明人： Alexander Rieger , Hans Oelkrug , Josef Schuster
IPC分类号： B28D1/02 , B32B38/04
CPC分类号： B28D5/0082 , B28D5/045 , Y10T83/0405 , Y10T156/1052 , Y10T428/192
摘要： A method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers. The method includes selecting a first workpiece and a second workpiece, each having two end surfaces; grinding at least one of the two end surfaces of each workpiece so as to create a ground end surface on each workpiece; cementing the ground end surface of the first workpiece to the ground end surface of second workpiece using a fastener so as to produce a compound rod piece having a longitudinal axis, wherein the fastener is disposed between the workpieces so as create a distance between the workpieces; fixing the compound rod piece in a longitudinal direction on a mounting plate; clamping the mounting plate with the compound rod piece in a wire saw; and cutting the compound rod piece perpendicularly to the longitudinal axis using the wire saw.
摘要翻译：一种同时将半导体材料的复合棒切割成多个晶片的方法。该方法包括：选择具有两个端面的第一工件和第二工件; 研磨每个工件的两个端面中的至少一个，以在每个工件上形成接地端面; 使用紧固件将第一工件的接地端面固定到第二工件的接地端面，以便制造具有纵向轴线的复合杆件，其中紧固件设置在工件之间，以便在工件之间产生距离; 将复合杆件沿长度方向固定在安装板上; 将复合杆件的安装板夹在线锯中; 并使用线锯将复合杆件垂直于纵向轴线切割。

6. 发明申请

US20110265940A1 METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL 有权
标题翻译：通过加工单晶生产半导体波形的多项式的方法
公开(公告)号：US20110265940A1
公开(公告)日：2011-11-03
申请号：US13087431
申请日：2011-04-15
申请人： Hans Oelkrug , Josef Schuster
发明人： Hans Oelkrug , Josef Schuster
IPC分类号： B32B38/10 , B24B1/00
CPC分类号： C30B33/06 , Y10T156/1052
摘要： A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis.
摘要翻译：用于制造多个半导体晶片的方法包括处理单晶。单晶以生长状态提供，并且具有偏离半导体晶片的晶格的所要求取向的取向的中心纵轴。沿着垂直于对应于半导体晶片的晶格的所需取向的结晶轴的切割平面将单块切割成单晶。块的侧表面围绕结晶轴研磨。然后从垂直于结晶轴的切割平面从接地块切割多个半导体晶片。

7. 发明申请

US20100089209A1 METHOD FOR SIMULTANEOUSLY CUTTING A COMPOUND ROD OF SEMICONDUCTOR MATERIAL INTO A MULTIPLICITY OF WAFERS 有权
标题翻译：将半导体材料的化合物同时切割成多晶硅的方法
公开(公告)号：US20100089209A1
公开(公告)日：2010-04-15
申请号：US12579127
申请日：2009-10-14
申请人： Alexander Rieger , Hans Oelkrug , Josef Schuster
发明人： Alexander Rieger , Hans Oelkrug , Josef Schuster
IPC分类号： B28D5/00 , B26D7/27 , B32B3/00
CPC分类号： B28D5/0082 , B28D5/045 , Y10T83/0405 , Y10T156/1052 , Y10T428/192
摘要： A method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers. The method includes selecting a first workpiece and a second workpiece, each having two end surfaces; grinding at least one of the two end surfaces of each workpiece so as to create a ground end surface on each workpiece; cementing the ground end surface of the first workpiece to the ground end surface of second workpiece using a fastener so as to produce a compound rod piece having a longitudinal axis, wherein the fastener is disposed between the workpieces so as create a distance between the workpieces; fixing the compound rod piece in a longitudinal direction on a mounting plate; clamping the mounting plate with the compound rod piece in a wire saw; and cutting the compound rod piece perpendicularly to the longitudinal axis using the wire saw.
摘要翻译：一种同时将半导体材料的复合棒切割成多个晶片的方法。该方法包括：选择具有两个端面的第一工件和第二工件; 研磨每个工件的两个端面中的至少一个，以在每个工件上形成接地端面; 使用紧固件将第一工件的接地端面固定到第二工件的接地端面，以便制造具有纵向轴线的复合杆件，其中紧固件设置在工件之间，以便在工件之间产生距离; 将复合杆件沿长度方向固定在安装板上; 将复合杆件的安装板夹在线锯中; 并使用线锯将复合杆件垂直于纵向轴线切割。

8. 发明授权

US08758537B2 Method for producing a multiplicity of semiconductor wafers by processing a single crystal 有权
标题翻译：通过处理单晶来生产多个半导体晶片的方法
公开(公告)号：US08758537B2
公开(公告)日：2014-06-24
申请号：US13087431
申请日：2011-04-15
申请人： Hans Oelkrug , Josef Schuster
发明人： Hans Oelkrug , Josef Schuster
IPC分类号： B32B37/00
CPC分类号： C30B33/06 , Y10T156/1052
摘要： A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis.
摘要翻译：用于制造多个半导体晶片的方法包括处理单晶。单晶以生长状态提供，并且具有偏离半导体晶片的晶格的所要求取向的取向的中心纵轴。沿着垂直于对应于半导体晶片的晶格的所需取向的结晶轴的切割平面将单块切割成单晶。块的侧表面围绕结晶轴研磨。然后从垂直于结晶轴的切割平面从接地块切割多个半导体晶片。

9. 发明申请

US20090031945A1 SINGLE CRYSTAL AND SEMICONDUCTOR WAFER AND APPARATUS AND METHOD FOR PRODUCING A SINGLE CRYSTAL 审中-公开
标题翻译：单晶和半导体晶体及其制造方法
公开(公告)号：US20090031945A1
公开(公告)日：2009-02-05
申请号：US12175376
申请日：2008-07-17
申请人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
发明人： Laszlo Fabry , Gunter Strebel , Hans Oelkrug
IPC分类号： C30B15/10
CPC分类号： C30B35/00 , C30B15/00 , Y10T117/10 , Y10T117/1064
摘要： The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3.
摘要翻译：本公开涉及一种用于制造半导体材料的单晶的装置和方法。该装置包括一个室和一个坩埚，该坩埚被布置在室中并由坩埚加热器封闭，用于屏蔽增长的单晶的辐射屏蔽以及坩埚加热器和室的内壁之间的绝热。该装置可以包括密封内壁和隔热层之间的间隙的弹性密封件，并且形成用于将气态铁羰基转移到单晶的障碍物。本公开还涉及通过使用该装置制造半导体材料的单晶的方法，所制造的单晶和从其切下的半导体晶片。单晶和半导体晶片的区别在于边缘区域，其从圆周延伸到直径为R-5mm的距离，直到单晶或半导体晶片，并具有铁浓度，其中铁浓度边缘区域小于1×10 9原子/ cm 3。

10. 发明授权

US5477808A Process for reducing the oxygen incorporation into a single crystal of silicon 失效
标题翻译：将氧结合减少到单晶硅的方法
公开(公告)号：US5477808A
公开(公告)日：1995-12-26
申请号：US203220
申请日：1994-02-28
申请人： Hans Oelkrug , Franz Segieth
发明人： Hans Oelkrug , Franz Segieth
IPC分类号： C30B15/00 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： A process and an apparatus reduces the oxygen incorporation into a single crystal of silicon which is drawn by the Czochralski method. If a molding is immersed at least temporarily in the melt between the single crystal and the crucible wall during drawing of the single crystal, the oxygen content of the single crystal is reduced compared with the oxygen content of a single crystal which has been drawn without the use of the molding.
摘要翻译：一种方法和装置减少了通过Czochralski法绘制的单晶硅中的氧结合。如果在单晶拉制期间模制品至少暂时浸没在单晶和坩埚壁之间的熔体中，则单晶的氧含量相对于未拉伸的单晶的氧含量而言降低使用成型。

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