专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140060420A1 Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE BAND LIGHT SOURCE USING THE SAME 有权
公开(公告)号：US20140060420A1
公开(公告)日：2014-03-06
申请号：US14073077
申请日：2013-11-06
申请人： NATIONAL TAIWAN UNIVERSITY
发明人： KUANG-YU HSU , DONG-YO JHENG , YI-HAN LIAO , SHENG-LUNG HUANG
IPC分类号： C30B15/16
CPC分类号： H01S3/1636 , C30B13/005 , C30B13/10 , C30B13/16 , C30B13/24 , C30B13/30 , C30B15/16 , C30B29/20 , G02B6/02 , H01S3/061 , H01S3/06716 , H01S3/094038 , H01S3/1625
摘要： The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.

2. 发明授权

US08337615B2 Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer 有权
标题翻译：用于制造具有近似多边形横截面的单晶硅晶片和相应的单晶Si晶片的方法
公开(公告)号：US08337615B2
公开(公告)日：2012-12-25
申请号：US11910683
申请日：2006-04-04
申请人： Nikolai Abrosimov , Anke Luedge , Andris Muiznieks , Helge Riemann
发明人： Nikolai Abrosimov , Anke Luedge , Andris Muiznieks , Helge Riemann
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B13/30 , C30B13/20 , C30B29/06 , Y10T428/24479
摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.
摘要翻译：制造具有近似多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。晶体的旋转速度降低到0至小于1rpm。在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。

3. 发明申请

US20110185963A1 Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules 有权
标题翻译：使用熔融颗粒生产由硅组成的单晶的方法
公开(公告)号：US20110185963A1
公开(公告)日：2011-08-04
申请号：US13008053
申请日：2011-01-18
申请人： Wilfried Von Ammon , Ludwig Altmannshofer
发明人： Wilfried Von Ammon , Ludwig Altmannshofer
IPC分类号： C30B13/20 , C30B13/14
CPC分类号： C30B13/00 , C30B11/00 , C30B13/20 , C30B13/26 , C30B13/30 , C30B13/32 , C30B15/02 , C30B15/06 , C30B29/06 , Y10T117/1056
摘要： Silicon single crystals are prepared from molten granules, byproducing a first volume of molten silicon between a growing single crystal and the lower end of a silicon conical tube which is closed at its lower end, and encloses a central opening of a rotating silicon plate below which the tube extends, by means of a first induction heating coil arranged below the plate;producing a second volume of molten silicon by a second induction heating coil arranged above the plate;melting the lower end of the tube to form a passage for the second volume of molten silicon, the passage produced at a point in time when the second volume is not yet present or is less than double the volume of the first volume; andcrystallizing monocrystalline silicon on the growing single crystal with consumption of molten silicon from the first and the second volume.
摘要翻译：由熔融颗粒制备硅单晶，通过在生长的单晶和在其下端封闭的硅锥形管的下端之间产生第一体积的熔融硅，并且在下面包围旋转硅板的中心开口通过布置在板下方的第一感应加热线圈，管延伸; 通过布置在板上方的第二感应加热线圈产生第二体积的熔融硅; 熔化管的下端以形成用于第二体积的熔融硅的通道，该通道在第二体积不存在的时间点或者小于第一体积的体积的两倍时产生; 并且在生长的单晶上结晶单晶硅，并从第一和第二体积消耗熔融硅。

4. 发明授权

US07655089B2 Process and apparatus for producing a single crystal of semiconductor material 有权
标题翻译：用于制造半导体材料的单晶的工艺和设备
公开(公告)号：US07655089B2
公开(公告)日：2010-02-02
申请号：US12242080
申请日：2008-09-30
申请人： Wilfried von Ammon
发明人： Wilfried von Ammon
IPC分类号： C30B15/02
CPC分类号： C30B29/06 , C30B13/08 , C30B13/10 , C30B13/14 , C30B13/16 , C30B13/30 , Y10T117/10 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.
摘要翻译：一种制造半导体材料的单晶的方法，其中熔体的一部分通过拉线圈保持液态，在晶种上固化以形成生长的单晶，并且将颗粒熔化以保持生长的单晶。熔化的颗粒在延迟后通入熔体。还有一种适用于进行该方法并具有延迟熔融颗粒和熔体混合的装置。

5. 发明授权

US06210478B1 Refining and analysis of material using horizontal cold-crucible induction levitation melting 失效
标题翻译：使用水平冷坩埚诱导悬浮熔化的材料的精炼和分析
公开(公告)号：US06210478B1
公开(公告)日：2001-04-03
申请号：US09346133
申请日：1999-07-09
申请人： Bernard Patrick Bewlay , Don Mark Lipkin , Dennis Joseph Dalpe
发明人： Bernard Patrick Bewlay , Don Mark Lipkin , Dennis Joseph Dalpe
IPC分类号： C30B1322
CPC分类号： C30B13/30 , C30B13/00 , C30B29/52
摘要： A method and apparatus for locally and successively melting a material by induction heating using a horizontal floating-zone crucible to refine and/or analyze the material. An electromagnetic field is generated to create a localized molten zone within the material that is at least partially levitated within the crucible. The crucible has an upper peripheral opening so that an upper portion of the molten zone is generally at a higher temperature than the lower portion of the molten zone adjacent the crucible wall. As a result, insoluble inclusions within the material separate and float to the upper portion of the molten zone. The molten zone may be translated longitudinally through the material to drive the inclusions toward one end of the material. The process can be carried out to refine or characterize the material, or to determine the solidus and liquidus temperatures of the material.
摘要翻译：一种用于通过感应加热局部且连续地熔化材料的方法和装置，使用水平浮动区坩埚来精炼和/或分析材料。产生电磁场以产生在坩埚内至少部分悬浮的材料内的局部熔融区。坩埚具有上周边开口，使得熔融区的上部通常处于比邻近坩埚壁的熔融区的下部更高的温度。结果，材料内的不溶性夹杂物分离并漂浮到熔融区的上部。熔融区域可以纵向平移通过材料以朝向材料的一端驱动夹杂物。该过程可以进行以细化或表征材料，或确定材料的固相和液相线温度。

6. 发明授权

US4176002A Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation 失效
标题翻译：通过在操作期间感测熔体区域的粘性扭矩来控制区域精炼期间的熔融温度和切克劳斯基晶体生长
公开(公告)号：US4176002A
公开(公告)日：1979-11-27
申请号：US785184
申请日：1977-04-06
申请人： Jean-Michel Quenisset , Rober Naslain , Paul Hagenmuller
发明人： Jean-Michel Quenisset , Rober Naslain , Paul Hagenmuller
IPC分类号： C30B13/30 , C30B15/22 , B01J17/10 , B01J17/18
CPC分类号： C30B15/22 , C30B13/30 , Y10S117/904 , Y10T117/1008
摘要： A method and apparatus for controlling a heated bath of molten material to obtain controlled solidification, wherein the molten bath is kept in constant rotational movement relative to the solid portion of the material being treated and the mechanical action due to the viscous friction which develops in the bath is detected and thereby controlled, said method being applicable to the floating zone method and the Czochralsky crystal drawing method and being capable of producing ingots of high dimensional regularity.
摘要翻译：一种用于控制熔融材料的加热浴以获得受控凝固的方法和装置，其中熔融浴相对于待处理材料的固体部分保持恒定的旋转运动，并且由于在检测并控制浴，所述方法适用于浮区法和切克劳斯基晶体拉伸法，并且能够生产高尺寸规则的锭。

7. 发明授权

US4080172A Zone refiner automatic control 失效
标题翻译：区域精炼机自动控制
公开(公告)号：US4080172A
公开(公告)日：1978-03-21
申请号：US645186
申请日：1975-12-29
申请人： Louis H. Fricke, Jr. , Thomas E. Reichard
发明人： Louis H. Fricke, Jr. , Thomas E. Reichard
IPC分类号： C30B13/28 , C30B13/30 , H01L21/208 , B01J17/10
CPC分类号： C30B13/30 , Y10T117/1008
摘要： Disclosed is a method and apparatus for the automated growing of a floating zone refined, monocrystalline semiconductor rod. Two images of the molten/solid interface are separately positioned on two sensor arrays which, in addition to providing positioning feedback information, measure the diameter, the length of the molten zone and the "bag" or overhang angle of the molten semiconductor matter. The output of the sensor arrays are processed into signals which operate the zone refiner controls. There is thus provided an automated process for zone refining and monocrystalline rod growth of a semiconductor crystal from a seed crystal beginning with the tapering-out process, through the straight rod growth with a closely controlled diameter portion, to the end of the tapering-in process.
摘要翻译：公开了一种用于自动生长浮式精制单晶半导体棒的方法和装置。熔融/固体界面的两个图像被分开地定位在两个传感器阵列上，除了提供定位反馈信息之外，测量熔融区域的直径，熔融区域的长度和熔融半导体物质的“袋”或悬垂角度。传感器阵列的输出被处理成操作区域精炼机控制的信号。因此，提供了一种自动化方法，用于从锥形开始过程开始的晶种的半导体晶体的区域精炼和单晶棒生长，通过具有紧密控制的直径部分的直杆生长到锥形末端处理。

8. 发明授权

US3915660A Preparing oriented semiconductor monocrystalline rods 失效
标题翻译：制备取向半导体单晶棒
公开(公告)号：US3915660A
公开(公告)日：1975-10-28
申请号：US37894373
申请日：1973-07-13
申请人： SIEMENS AG
发明人： KELLER WOLFGANG , MUEHLBAUER ALFRED , REUSCHEL KONRAD
IPC分类号： C30B13/28 , B01J3/00 , C30B13/30 , H01L21/208 , B01D9/00 , B01J17/20
CPC分类号： C30B13/30 , B01J3/004 , Y10T428/24942 , Y10T428/2913
摘要： A process for preparing oriented semiconductor monocrystalline rods with a specific resistance which drops towards the center of the rod. The process utilizes rapid non-crucible moving zone melting of a preformed vertically positioned semiconductor rod using an inductive heating device which annularly surrounds the rod.
摘要翻译：制备具有电阻的朝向棒中心的取向半导体单晶棒的方法。该方法使用环形围绕杆的感应加热装置利用预先形成的垂直定位的半导体棒的快速非坩埚移动区域熔化。

9. 发明授权

US3757071A Method for crucible free zone melting 失效
标题翻译：可自由区域熔融的方法
公开(公告)号：US3757071A
公开(公告)日：1973-09-04
申请号：US3757071D
申请日：1972-03-02
申请人： SIEMENS AG
发明人： STUT H
IPC分类号： C30B13/30 , H05B5/00
CPC分类号： C30B13/30
摘要： Method for crucible free zone melting of a vertically oriented semiconductor rod, wherein the melting zone is monitored by a television camera and the information taken from the electric pulses supplied by the television cameras, not only regarding the cross section of the crystallizing material, but regarding the angle of two tangents of the melting zone profile and are used for the regulation and control of the melted zone. One tangent is applied in the crystallization boundary and the other tangent, beyond the bulge of the melting zone at a distinctive point of the melting zone profile, in particular at an inversion point.

10. 发明授权

US3658598A Method of crucible-free zone melting crystalline rods, especially of semiconductor material 失效
标题翻译：无结晶区熔体晶体管的方法，特别是半导体材料
公开(公告)号：US3658598A
公开(公告)日：1972-04-25
申请号：US3658598D
申请日：1969-08-19
申请人： SIEMENS AG
发明人： KELLER WOLFGANG , BERGER GUNTHER
IPC分类号： C30B13/28 , C30B13/30 , C30B13/32 , C30B15/08 , B01J17/02 , B01D9/00
CPC分类号： C30B13/30 , C30B13/28 , C30B13/32 , C30B15/08 , Y10S117/901 , Y10S117/91 , Y10S117/911 , Y10S117/912 , Y10S117/917 , Y10T117/1072
摘要： Method of zone melting a semiconductor rod includes displacing an end holder of the vertically held rod transversely to the rod axis, continuously displacing the other end holder vertically so as to feed a rod portion, having a diameter greater than the inner diameter of an annular heating device surrounding the rod and forming a melting zone therein, into the melting zone, forming a diametrical constriction in the melting zone, displacing the one end holder vertically and rotating it until the rod portion located between it and the melting zone is formed to a specific diameter larger than the inner diameter of the heating device and, after forming the rod portion to the specific cross section, vertically displacing the end holders elative to the heating device.
摘要翻译：对半导体棒进行区域熔化的方法包括将垂直保持的杆的端部保持器横向于杆的轴线移动，使另一端部托架垂直地移动，以便进给杆部分，其直径大于环形加热的内径围绕杆并在其中形成熔化区的装置进入熔化区，在熔化区中形成直径收缩，垂直移动一端支架并使其旋转，直到位于其与熔化区之间的杆部分形成为特定的直径大于加热装置的内径，并且在将杆部分形成到特定横截面之后，将端部保持器垂直移位到加热装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式