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1. 发明授权

US08625194B2 Semiconductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US08625194B2
公开(公告)日：2014-01-07
申请号：US13472029
申请日：2012-05-15
申请人： Hideaki Hasegawa
发明人： Hideaki Hasegawa
IPC分类号： H01S5/10 , H01S5/50 , H01S5/323 , H01S5/343
CPC分类号： H01S5/1014 , H01S5/0425 , H01S5/1064 , H01S5/2222 , H01S5/227 , H01S5/32391 , H01S5/34306 , H01S5/50 , H01S5/5027 , Y10S977/815 , Y10S977/95
摘要： A semiconductor optical amplifier includes an input-side optical amplifier waveguide section that has a first active core layer. An output-side optical amplifier waveguide section connects to the input-side optical amplifier waveguide section and has a second active core layer that is wider than the first active core layer. The width of the first active core layer and relative refractive index difference between the first active core layer and adjacent clad section in the width direction of the first active core layer, and the width of the second active core layer and relative refractive index difference between the second active core layer and adjacent clad section in the width direction of the second active core layer are set such that the carrier density and optical confinement factor in the first active core layer are higher than the carrier density and optical confinement factor in the second active core layer.
摘要翻译：半导体光放大器包括具有第一有源芯层的输入侧光放大器波导部。输出侧光放大器波导部分连接到输入侧光放大器波导部分，并且具有比第一有源核心层更宽的第二有源核心层。第一有源芯层的宽度和第一有源芯层与相邻的包层部分之间在第一有源芯层的宽度方向上的相对折射率差以及第二有源芯层的宽度和第二有源芯层的宽度之间的相对折射率差第二有源芯层和第二有源芯层的宽度方向上的相邻包层部分被设定为使得第一有源芯层中的载流子密度和光限制因子高于第二有源核中的载流子密度和光限制因子层。

2. 发明申请

US20050141578A1 Laser diode structure with blocking layer 审中-公开
标题翻译：具有阻挡层的激光二极管结构
公开(公告)号：US20050141578A1
公开(公告)日：2005-06-30
申请号：US10871895
申请日：2004-06-18
申请人： Benoit Reid , Arnaud Fily , Norbert Lichtenstein , D. Knight
发明人： Benoit Reid , Arnaud Fily , Norbert Lichtenstein , D. Knight
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2232 , H01S5/2224 , H01S5/2231 , H01S5/2237 , H01S5/32391
摘要： The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers.
摘要翻译：本发明提供了可以在p-基板上制造的自对准激光器结构，并提供用于限制漏电流的装置，从而提高结构的整体效率。波导激光器结构包括依次沉积在p-InP，p-GaAs或p-GaN衬底或其他形式的p衬底上的第一系列层，其中这些层形成p覆层。随后在该第一系列层上沉积有源层。绝缘或半绝缘材料的阻挡层沉积在有源层上，其中该阻挡层具有形成在其中的沟槽，其中该半绝缘层被外延沉积。阻挡层提供了限制电流从而减少泄漏电流的装置。在阻挡层沉积完成激光结构的第二系列层，其中该第二系列层形成n覆层。由于n覆层包含多于一种材料，所以该结构提供横向波导。在完成所有层的沉积之后，在第一系列层的底表面上形成正电极，并且在第二系列层的顶部上形成负电极。

3. 发明申请

US20030235227A1 Spot-size-converted laser for unisolated transmission 审中-公开
标题翻译：用于单分辨率传输的点尺寸转换激光器
公开(公告)号：US20030235227A1
公开(公告)日：2003-12-25
申请号：US10174805
申请日：2002-06-19
发明人： Naresh Chand , Julie Eng , Martin Christian Fischer , Philip Anthony Kiely , David J. Klotzkin , Keisuke Kojima , Genji Tohmon , Yan Xu
IPC分类号： H01S005/00
CPC分类号： G02B6/1228 , G02B6/4203 , G02B6/4228 , H01S5/02252 , H01S5/02284 , H01S5/1014 , H01S5/32391 , H01S2301/185
摘要： A transmit optical subassembly (TOSA) includes a spot-size-converted (SSC) semiconductor laser coupled to an optical fiber without a lens or isolator. The spot-size-converted semiconductor laser includes an active region and an expander region that expands the spot size of the laser while maintaining efficient active laser performance. The SSC laser is coupled to a submount and passively aligned to an optical fiber positioned within a V-shaped groove formed within the submount. The SSC laser includes a narrow far field advantageous for providing a high coupling efficiency and high quality data transmission. The SSC laser is resistant to back reflection and produces a 1.3 or 1.55 micron optical wavelength and a data rate ranging from 1 to 10 Gbps. The TOSA provides high coupled power due to narrow far field, with potential extra reflection resistance due to absorption and mode transfer losses in coupling reflections through the expander back into the active region. The TOSA meets industry specifications (SDH/SONET) for 15 km transmission and has a maximum optical path penalty of less than 1 dB at a bit error ratio of 10null10 for up to null14 dB back reflection.
摘要翻译：发射光学子组件（TOSA）包括耦合到没有透镜或隔离器的光纤的点尺寸转换（SSC）半导体激光器。点尺寸转换半导体激光器包括有源区域和扩展器区域，其扩展激光器的光点尺寸，同时保持有效的激光器性能。 SSC激光器耦合到基座并且被动地对准位于形成在底座内的V形槽内的光纤。 SSC激光器包括有利于提供高耦合效率和高质量数据传输的窄远场。 SSC激光器抗背反射，产生1.3或1.55微米的光波长，数据速率范围从1到10 Gbps。 TOSA由于窄的远场而提供高耦合功率，由于通过扩展器耦合到有源区域的耦合反射中的吸收和模式传输损耗，具有潜在的额外的反射电阻。 TOSA满足15公里传输的行业规范（SDH / SONET），对于高达-14 dB的背反射，误码率为10 <-10的最大光路损耗小于1 dB。

4. 发明申请

US20030086458A1 Semiconductor laser including N-doped quaternary layer 审中-公开
标题翻译：半导体激光器包括N掺杂四元层
公开(公告)号：US20030086458A1
公开(公告)日：2003-05-08
申请号：US09495988
申请日：2000-02-01
发明人： Kenneth L Bacher
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32391 , H01S5/34373 , H01S2301/173 , H01S2301/18
摘要： A semiconductor laser including a substrate layer, an n-doped quaternary layer disposed on the substrate layer, a quantum well layer disposed on the quaternary layer, and a cladding layer disposed on the quantum well layer. The structure of the laser creates an optical mode which is substantially more circular, and thus increases the efficiency of the laser when coupling to an optical fiber.
摘要翻译：包括衬底层，设置在衬底层上的n掺杂四元层，设置在第四层上的量子阱层和设置在量子阱层上的覆层的半导体激光器。激光器的结构产生了基本上更圆的光学模式，因此在耦合到光纤时增加了激光器的效率。

5. 发明申请

US20030007530A1 Semiconductor laser element and process for producing the same 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20030007530A1
公开(公告)日：2003-01-09
申请号：US10179012
申请日：2002-06-26
申请人： SHARP KABUSHIKI KAISHA
发明人： Hiroyuki Hosoba , Yasuo Kan
IPC分类号： H01S005/00
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/321 , H01S5/32391
摘要： In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.
摘要翻译：在半导体激光元件中，有源层夹在第一导电型和第二导电型包覆层之间，第二导电型接触层设置在第二覆层的上方，中间带隙层介于第二覆层所述接触层，所述第二导电型接触层具有与所述第二导电型包覆层的带隙不同的带隙，所述中间带隙层在所述第二导电型包覆层的带隙与所述第二导电型包覆层的带隙之间具有中间带隙导电型接触层。第二导电型接触层具有至少第一接触层，中间第二接触层和第三接触层，并且第二接触层的杂质密度低于第一和第三接触层的杂质浓度。

6. 发明授权

US06198863B1 Optical filters 失效
标题翻译：光滤波器
公开(公告)号：US06198863B1
公开(公告)日：2001-03-06
申请号：US09051207
申请日：1998-04-28
申请人： Ian F Lealman , Michael J Robertson , Makoto Okai
发明人： Ian F Lealman , Michael J Robertson , Makoto Okai
IPC分类号： G02B634
CPC分类号： H01S5/06258 , G02B6/12007 , G02B6/124 , H01S5/06256 , H01S5/1032 , H01S5/1035 , H01S5/1209 , H01S5/1218 , H01S5/1225 , H01S5/124 , H01S5/32391 , H01S5/5045
摘要： An optical filter is formed from at least two grating located in a waveguide region of a semiconductor optical device. Each grating has a multiple peak optical passband. The gratings are spaced apart in the waveguide region and form an optical cavity having a comb-filter characteristic. The gratings may be located in the active region of an optical gain element and in a preferred example are superstructure gratings (SSGs). A number of filters may be joined together in series.
摘要翻译：光学滤波器由位于半导体光学器件的波导区域中的至少两个光栅形成。每个光栅具有多峰光学通带。光栅在波导区域中间隔开并形成具有梳状滤波器特性的光学腔。光栅可以位于光学增益元件的有源区域中，并且在优选的示例中是上部结构光栅（SSG）。多个过滤器可以串联在一起。

7. 发明授权

US6151351A Distributed feedback semiconductor laser and method for producing the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US6151351A
公开(公告)日：2000-11-21
申请号：US534959
申请日：1995-09-28
申请人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
发明人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
IPC分类号： H01L21/205 , H01S5/026 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/06256 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.
摘要翻译：在分布式反馈半导体激光器中包括InP衬底和形成在InP衬底的主表面上的多层结构，该多层结构至少包括用于发射激光的有源层和用于激光的分布反馈的周期性结构并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形横截面并且平行于分布式反馈半导体激光器的腔长度，三角形横截面朝向InP 基质。

8. 发明授权

US6030452A Planarized growth of III-V compound 失效
标题翻译： III-V化合物的平面生长
公开(公告)号：US6030452A
公开(公告)日：2000-02-29
申请号：US449221
申请日：1995-05-24
申请人： Tatsuya Takeuchi
发明人： Tatsuya Takeuchi
IPC分类号： H01S5/00 , C30B25/02 , H01L21/205 , H01S5/22 , H01S5/227 , H01S5/323 , C30B25/04
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/0243 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L21/02639 , H01S2304/04 , H01S5/2224 , H01S5/32391
摘要： A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area.
摘要翻译：一种制造半导体器件的方法包括以下步骤：制备在其表面上具有台阶的半导体衬底，并通过使用添加的源气体的金属有机气相外延在半导体衬底的表面上生长III-V族化合物半导体层每个分子含有一个或两个卤素原子的卤代烃。通过在下层区域上沉积嵌入层，可以使其上具有台阶的基板的表面平坦化。

9. 发明授权

US5822349A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5822349A
公开(公告)日：1998-10-13
申请号：US614210
申请日：1996-03-12
申请人： Keiji Takaoka , Mitsuhiro Kushibe , Toshihide Izumiya , Yoshihiro Kokubun
发明人： Keiji Takaoka , Mitsuhiro Kushibe , Toshihide Izumiya , Yoshihiro Kokubun
IPC分类号： H01S5/00 , H01S5/026 , H01S5/22 , H01S5/227 , H01S5/30 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01S5/0265 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2275 , H01S5/305 , H01S5/32391
摘要： This invention is a semiconductor device including a p-type InP substrate having a mesa stripe in which at least an active layer and an n-type cladding layer are formed, and a semiconductor layer so formed as to bury the side surfaces of the mesa stripe and having at least an n-type current blocking layer and a p-type current blocking layer, wherein the n-type current blocking layer contains approximately 8.times.10.sup.17 cm.sup.-3 or more of Se as an impurity and the n-type current blocking layer and the n-type cladding layer are not contacting each other.
摘要翻译：本发明是一种半导体器件，包括具有至少形成有源层和n型覆层的台面条状的p型InP衬底以及形成为埋设台面条的侧面的半导体层并且具有至少n型电流阻挡层和p型电流阻挡层，其中n型电流阻挡层含有大约8×10 17 cm -3以上的Se作为杂质，n型电流阻挡层和 n型覆层不接触。

10. 发明授权

US5723360A Method of processing an epitaxial wafer of InP or the like 失效
标题翻译：处理InP等的外延晶片的方法
公开(公告)号：US5723360A
公开(公告)日：1998-03-03
申请号：US603089
申请日：1996-02-20
申请人： Takashi Iwasaki
发明人： Takashi Iwasaki
IPC分类号： H01L21/302 , H01L21/205 , H01L21/306 , H01L21/308 , H01L31/10 , H01L31/18 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/30 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01L21/20
CPC分类号： H01S5/227 , H01L21/30612 , H01L21/30617 , H01L21/30621 , H01L31/1844 , H01L33/0062 , H01S5/209 , H01S5/2201 , H01S5/2275 , H01S5/32391 , Y02E10/544
摘要： Fine processing of InP epitaxial wafers including As, In and P for producing laser diodes, light emitting diodes or photodiodes. The InP epitaxial wafer is selectively covered with striped protection mask films. The wafer is etched by some etchant which forms normal-mesas or mountain-shaped stripes under the masks. Then the wafer is again etched by a gas of thermally dissolved AsCl.sub.3 till the stripes have rectangle sections with erect surfaces. Buried layers of InP are grown on the eliminated parts of the wafer.
摘要翻译：包括用于制造激光二极管，发光二极管或光电二极管的As，In和P的InP外延晶片的精细加工。 InP外延晶片选择性地覆盖有条纹保护掩模膜。通过在掩模下形成正常台面或山形条纹的一些蚀刻剂来蚀刻晶片。然后用热溶解的AsCl3气体再次蚀刻晶片，直到条纹具有具有直立表面的矩形部分。嵌入的InP层被生长在晶片的消除部分上。

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