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1. 发明授权

US08338844B2 Semiconductor light emitting apparatus having stacked reflective dielectric films 有权
标题翻译：具有层叠反射介电膜的半导体发光装置
公开(公告)号：US08338844B2
公开(公告)日：2012-12-25
申请号：US12549048
申请日：2009-08-27
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L29/40 , H01L21/00
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
摘要翻译：一种制造半导体发光装置的方法包括使半导体发光器件和安装构件彼此面对。半导体发光器件包括层叠结构单元，其包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，设置在堆叠结构的主表面上的第一电极连接到第一半导体层的单元，设置在层叠结构单元的主表面上以连接到第二半导体层的第二电极，以及设置在主表面的第一半导体层和第二半导体层上的电介质堆叠膜不被第一电极和第二电极覆盖，由具有不同折射率的堆叠电介质膜形成，并且包括竖立在第一和第二电极中的至少一个的边缘的至少一部分上的突出部分。安装构件包括连接到第一和第二电极中的至少一个的连接构件。该方法还包括使用突出部分作为引导件使连接构件接触并连接到第一和第二电极中的至少一个。

2. 发明申请

US20110049541A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110049541A1
公开(公告)日：2011-03-03
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/02 , H01L33/12 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译：一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。

3. 发明申请

US20100059734A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20100059734A1
公开(公告)日：2010-03-11
申请号：US12505053
申请日：2009-07-17
申请人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
发明人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译：半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层并由GaInN或AlGaInN制成。多个阻挡层具有最近的阻挡层和远的阻挡层。最近的阻挡层最接近多个阻挡层中的第二层。最近的阻挡层包括第一部分和第二部分。第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

4. 发明申请

US20100051987A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100051987A1
公开(公告)日：2010-03-04
申请号：US12400396
申请日：2009-03-09
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/44 , H01L33/0025 , H01L33/06 , H01L33/24 , H01L33/38 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/013 , H01L2924/01013
摘要： A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
摘要翻译：半导体发光器件包括：层叠结构，第一电极，第二电极和电介质层压膜。层叠结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，其中第二半导体层和发光层被选择性地去除，并且第一半导体层的一部分暴露于第二半导体层侧的第一主表面。第一电极设置在层压结构的第一主表面上并连接到第一半导体层，并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层金属膜，其设置在第一半导体层上，并且对于从第一金属膜发射的发光层的光具有较高的反射率，并且相比于第一金属膜具有比第一半导体层更高的接触电阻。第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上，并且具有层叠具有不同折射率的多个电介质膜。

5. 发明授权

US5253262A Semiconductor laser device with multi-directional reflector arranged therein 失效
标题翻译：其中布置有多向反射器的半导体激光器件
公开(公告)号：US5253262A
公开(公告)日：1993-10-12
申请号：US784711
申请日：1991-10-30
申请人： Atsushi Kurobe , Tsutomu Tezuka , Tetsuo Sadamasa , Mitsuhiro Kushibe , Yoshito Kawakyu
发明人： Atsushi Kurobe , Tsutomu Tezuka , Tetsuo Sadamasa , Mitsuhiro Kushibe , Yoshito Kawakyu
IPC分类号： H01S5/10 , H01S5/12 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/18327 , B82Y20/00 , H01S5/18388 , H01S5/227 , H01S2301/18 , H01S5/1042 , H01S5/1071 , H01S5/1078 , H01S5/1082 , H01S5/1228 , H01S5/18305 , H01S5/18308 , H01S5/18319 , H01S5/1835 , H01S5/18352 , H01S5/2004 , H01S5/2027 , H01S5/2205 , H01S5/2275 , H01S5/32308 , H01S5/34313 , H01S5/4056
摘要： A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.
摘要翻译：其中公开的微腔半导体激光器包括双异质结构部分，其包括夹在第一或下包层之间的中间有源层和半导体衬底之上的第二或上覆层。第一多层反射器部分布置在基板和双异质结构部分之间，使其反射率在激光器的振荡波长附近变得最大。上覆层是半球形的。三维光反射器覆盖双异质结构部分，用于控制沿着各个方向的双异质结构部分中获得的自发辐射，并且用于增加具有特定激光模式的自发发射的耦合比，从而降低阈值电流。

6. 发明授权

US09070837B2 Semiconductor light-emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09070837B2
公开(公告)日：2015-06-30
申请号：US12400396
申请日：2009-03-09
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38
CPC分类号： H01L33/44 , H01L33/0025 , H01L33/06 , H01L33/24 , H01L33/38 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/013 , H01L2924/01013
摘要： A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
摘要翻译：半导体发光器件包括：层叠结构，第一电极，第二电极和电介质层压膜。层叠结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，其中第二半导体层和发光层被选择性地去除，并且第一半导体层的一部分暴露于第二半导体层侧的第一主表面。第一电极设置在层压结构的第一主表面上并连接到第一半导体层，并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层金属膜，其设置在第一半导体层上，并且对于从第一金属膜发射的发光层的光具有较高的反射率，并且相比于第一金属膜具有比第一半导体层更高的接触电阻。第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上，并且具有层叠具有不同折射率的多个电介质膜。

7. 发明授权

US09012888B2 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer 有权
标题翻译：半导体发光器件，晶片，半导体发光器件的制造方法以及晶片的制造方法
公开(公告)号：US09012888B2
公开(公告)日：2015-04-21
申请号：US13406705
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构，第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。发光单元包括阻挡层和设置在阻挡层之间的阱层。第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。第四层具有比阱层更薄的厚度。第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。第六层的厚度比井层薄。

8. 发明授权

US08937325B2 Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer 有权
标题翻译：半导体器件，晶片，半导体器件的制造方法以及晶片的制造方法
公开(公告)号：US08937325B2
公开(公告)日：2015-01-20
申请号：US13406740
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.
摘要翻译：根据一个实施例，半导体器件包括包括氮化物半导体的n型第一层，包括氮化物半导体的p型第二层，发光单元和第一层叠体。发光单元设置在第一和第二层之间。第一层叠体设置在第一层和发光单元之间。第一层叠体包括多个包含AlGaInN的第三层和与第三层交替堆叠并包括GaInN的多个第四层。第一层叠体具有面向发光单元的第一表面。第一层叠体具有设置在第一表面中的凹陷。发光单元的一部分嵌入凹部的一部分。第二层的一部分设置在发光单元的一部分上。

9. 发明授权

US08921886B2 Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件，半导体发光器件和半导体发光器件的制造方法
公开(公告)号：US08921886B2
公开(公告)日：2014-12-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/00 , H01L33/40
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

10. 发明授权

US08791498B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08791498B2
公开(公告)日：2014-07-29
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译：一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。

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