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1. 发明授权

US09031111B2 Optical semiconductor device and method of manufacturing optical semiconductor device 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US09031111B2
公开(公告)日：2015-05-12
申请号：US14310490
申请日：2014-06-20
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Tatsuya Takeuchi , Taro Hasegawa
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/30 , H01L21/02
CPC分类号： H01S5/20 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01S5/2227 , H01S5/2275 , H01S5/3013
摘要： A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.
摘要翻译：一种制造光半导体器件的方法，包括：在第一导电型半导体衬底上形成包括第一导电型包覆层，有源层和第二导电型包覆层的台面结构，台面的最上表面结构由第二导电型包层的上表面构成; 生长的第一个埋藏层在比活性层更高的位置掩埋台面结构的两侧; 通过蚀刻第二导电型包覆层的上表面的两个边缘来形成凹陷面; 以及在所述第二导电型包覆层和所述第一掩埋层的凹面上生长所述第一导电类型的第二掩埋层。

2. 发明授权

US08270446B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08270446B2
公开(公告)日：2012-09-18
申请号：US12718009
申请日：2010-03-05
申请人： Takashi Shiota , Takeshi Kitatani
发明人： Takashi Shiota , Takeshi Kitatani
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/187 , H01S5/2209 , H01S5/2226 , H01S5/2227 , H01S5/2275
摘要： High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.
摘要翻译：实现了具有掩埋异质结构的半导体激光器件的高性能和高可靠性。具有掩埋异质结构的半导体激光器件通过用Ru掺杂的InGaP宽间隙层掩埋台面结构的两面并随后通过组成从InGaP分级为InP的Ru掺杂的InGaP梯度层而制造，以及然后，通过Ru掺杂的InP层。通过在Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层之间提供Ru掺杂的InGaP渐变层，Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层彼此不格子匹配可以形成具有优异结晶度的埋层。

3. 发明申请

US20110128985A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20110128985A1
公开(公告)日：2011-06-02
申请号：US12734665
申请日：2008-10-17
申请人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
发明人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
IPC分类号： H01S5/026
CPC分类号： H01S5/223 , H01S5/221 , H01S5/2219 , H01S5/2227 , H01S5/2231 , H01S5/34326
摘要： Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.
摘要翻译：提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。半导体激光器设置有基板（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。

4. 发明授权

US07362787B2 Self-mode-locked semiconductor laser 失效
标题翻译：自锁半导体激光器
公开(公告)号：US07362787B2
公开(公告)日：2008-04-22
申请号：US11262536
申请日：2005-10-28
申请人： Weiguo Yang , Liming Zhang
发明人： Weiguo Yang , Liming Zhang
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/0657 , H01S5/2224 , H01S5/2227 , H01S5/2275 , H01S5/34306
摘要： An interband self-mode-locked (SML) semiconductor laser utilizes an active waveguide structure that includes an active waveguide section and one or more passive waveguide sections that together enhances self-mode-locking. The SML laser operation is based on enhanced Kerr lens mode-locking by vertically optically combining the active section with one or more passive waveguide sections.
摘要翻译：带间自锁模（SML）半导体激光器利用有源波导结构，其包括有源波导部分和一个或多个无源波导部分，这些部分一起增强自锁定。 SML激光器操作基于通过将有源部分与一个或多个无源波导部分垂直光学组合而增强的克尔透镜锁模。

5. 发明申请

US20070170441A1 Nitride semiconductor device and method for manufacturing the same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070170441A1
公开(公告)日：2007-07-26
申请号：US11698209
申请日：2007-01-26
申请人： Toshiyuki Takizawa , Jun Shimizu , Tetsuzo Ueda
发明人： Toshiyuki Takizawa , Jun Shimizu , Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02647 , H01L21/0265 , H01L33/32 , H01L2933/0083 , H01S5/0207 , H01S5/2045 , H01S5/2223 , H01S5/2227 , H01S5/227 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括：具有主表面的衬底; 形成在所述基板的主面上的第一氮化物半导体层，具有与所述主面垂直的一个或多个凸部; 以及选择性地生长在第一氮化物半导体层的一个或多个凸部的侧面上的第二氮化物半导体层。

6. 发明申请

US20050145863A1 Oxygen-doped al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
公开(公告)号：US20050145863A1
公开(公告)日：2005-07-07
申请号：US11059207
申请日：2005-02-16
申请人： Fred Kish , Sheila Hurtt , Charles Joyner , Richard Schneider
发明人： Fred Kish , Sheila Hurtt , Charles Joyner , Richard Schneider
IPC分类号： H01L29/165 , H01L29/22 , H01L29/40 , H01L31/0304 , H01L31/109 , H01L31/153 , H01L33/14 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

7. 发明授权

US06891202B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices 有权
标题翻译：有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US06891202B2
公开(公告)日：2005-05-10
申请号：US10319962
申请日：2002-12-16
申请人： Fred A. Kish, Jr. , Sheila K. Mathis , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila K. Mathis , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L29/165 , H01L29/22 , H01L29/40 , H01L31/0304 , H01L31/109 , H01L31/153 , H01L33/14 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：诸如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件的有源半导体器件包括形成在衬底上的多个半导体层，其中一层是有源区。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

8. 发明申请

US20040121500A1 Optical device and method of manufacture thereof 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20040121500A1
公开(公告)日：2004-06-24
申请号：US10729090
申请日：2003-12-05
申请人： TriQuint Technology Holding Co.
发明人： Leonard Jan-Peter Ketelsen , Abdallah Ougazzaden , Junstin L. Peticolas
IPC分类号： H01L021/00 , H01L031/12 , H01L029/06
CPC分类号： H01L31/0203 , H01S5/2227 , H01S5/2275
摘要： The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.
摘要翻译：本发明提供一种光学装置及其制造方法。在一个实施例中，制造光学器件的方法可以包括将第一层的端部与位于由衬底形成的台面结构之上的覆层进行隔离。第一层的端部可以通过将端部封装在位于台面结构附近的第二层和第三层之间而与包层隔离。

9. 发明授权

US06706542B1 Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication 有权
标题翻译： InAIAs双层在III-V器件制造中阻挡掺杂物扩散的应用
公开(公告)号：US06706542B1
公开(公告)日：2004-03-16
申请号：US09645913
申请日：2000-08-25
申请人： Michael Geva , Yuliya Anatolyevna Akulova , Abdallah Ougazzaden
发明人： Michael Geva , Yuliya Anatolyevna Akulova , Abdallah Ougazzaden
IPC分类号： H01L2100
CPC分类号： H01S5/227 , H01L21/2205 , H01L33/02 , H01L33/305 , H01S5/2209 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2272 , H01S5/3072
摘要： The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is disposed between a first doped layer and a second doped layer. The multi-layer dopant barrier further includes a first dopant blocking layer adjacent the first doped layer and a second dopant blocking layer adjacent the second doped layer. A technique for fabricating the multi layer dopant barrier is disclosed. A first dopant blocking layer is formed at a first temperature, and a second dopant blocking layer is formed at a second temperature over the first barrier layer.
摘要翻译：本发明涉及一种用于半导体结构的多层掺杂剂阻挡层及其制造方法。在说明性实施例中，多层掺杂剂阻挡层设置在第一掺杂层和第二掺杂层之间。多层掺杂剂阻挡层还包括与第一掺杂层相邻的第一掺杂剂阻挡层和与第二掺杂层相邻的第二掺杂剂阻挡层。公开了一种用于制造多层掺杂剂阻挡层的技术。在第一温度下形成第一掺杂剂阻挡层，并且在第一阻挡层上的第二温度下形成第二掺杂剂阻挡层。

10. 发明申请

US20030002554A1 Compound semiconductor light emitting device and process for producing the same 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US20030002554A1
公开(公告)日：2003-01-02
申请号：US10227412
申请日：2002-08-26
发明人： Tsutomu Munakata , Yasumasa Kashima
IPC分类号： H01S005/00
CPC分类号： H01S5/227 , H01S5/2226 , H01S5/2227 , H01S5/2275 , H01S5/3072
摘要： The compound semiconductor light emitting device can keep the effect of confining carrier into an active layer and improve light emission efficiency. In the device having the first conductive type substrate 11; the active layer 12 on the first conductive type substrate 11; the second conductive type sub-layer 15 and the first conductive type sub-layer 17, in this order from the lower to the upper, on the first conductive type substrate 11 and at both sides of the active layer 12; the second conductive type cladding layer 19 on/over the active layer 12 and the first conductive type sub-layer 17; and the second conductive type contact layer 21 on the second conductive type cladding layer 19; the p-type diffusion barrier layer 23 is further formed between the n-type sub-layer 17 and the p-type cladding layer 19.
摘要翻译：化合物半导体发光器件可以保持将载流子限制在有源层中并提高发光效率的效果。在具有第一导电型基板11的装置中，第一导电型基板11上的有源层12; 第二导电类型子层15和第一导电型子层17从第一导电类型基板11和有源层12的两侧依次从下到上依次; 位于有源层12上的第二导电型包覆层19和第一导电型子层17; 和第二导电型覆层19上的第二导电型接触层21; p型扩散阻挡层23还形成在n型子层17和p型覆层19之间。

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