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1. 发明申请

US20030007530A1 Semiconductor laser element and process for producing the same 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20030007530A1
公开(公告)日：2003-01-09
申请号：US10179012
申请日：2002-06-26
申请人： SHARP KABUSHIKI KAISHA
发明人： Hiroyuki Hosoba , Yasuo Kan
IPC分类号： H01S005/00
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/321 , H01S5/32391
摘要： In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.
摘要翻译：在半导体激光元件中，有源层夹在第一导电型和第二导电型包覆层之间，第二导电型接触层设置在第二覆层的上方，中间带隙层介于第二覆层所述接触层，所述第二导电型接触层具有与所述第二导电型包覆层的带隙不同的带隙，所述中间带隙层在所述第二导电型包覆层的带隙与所述第二导电型包覆层的带隙之间具有中间带隙导电型接触层。第二导电型接触层具有至少第一接触层，中间第二接触层和第三接触层，并且第二接触层的杂质密度低于第一和第三接触层的杂质浓度。

2. 发明申请

US20030169793A1 Semiconductor laser device capable of maintaining the operation current low and method of manufacturing the same 失效
标题翻译：能够维持运转电流低的半导体激光装置及其制造方法
公开(公告)号：US20030169793A1
公开(公告)日：2003-09-11
申请号：US10377704
申请日：2003-03-04
申请人： SHARP KABUSHIKI KAISHA
发明人： Hiroyuki Hosoba , Atsuo Tsunoda , Hiroshi Hayashi
IPC分类号： H01L021/00 , H01S005/00
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2205 , H01S5/2219
摘要： In this semiconductor laser device, an InGaP etching block layer 11 as an etching selection layer having etching selectivity for an n-type AlInP current block layer 10, which is a non-optical-absorption layer, is formed on the n-type current block layer 10. Since this etching block layer 11 prevents the current block layer 10 on both sides of a ridge 20 from being etched during manufacture, a contact layer 12 can be prevented from entering gaps between the sides of this ridge 20 and the current block layer 10. Therefore, light oscillating in an active layer 4 is taken out from a device end surface without being absorbed in the contact layer 12. According to this semiconductor laser device, an oscillation threshold current and an operation current can be maintained low, deterioration of differential quantum efficiency can be prevented and reliability can be improved.
摘要翻译：在该半导体激光器件中，在n型电流块上形成作为非光学吸收层的n型AlInP电流阻挡层10具有蚀刻选择性的蚀刻选择层的InGaP蚀刻阻挡层11 由于该蚀刻阻挡层11防止在制造期间在脊20的两侧上的电流阻挡层10被蚀刻，因此可以防止接触层12进入该脊20的两侧之间的间隙和当前阻挡层因此，在有源层4中振荡的光从器件端面取出而不被吸收在接触层12中。根据该半导体激光器件，可以将振荡阈值电流和操作电流保持为低，劣化可以防止差分量子效率，并提高可靠性。

3. 发明申请

US20040037336A1 Semiconductor laser device of III-V group compound and fabrication method therefor 审中-公开
标题翻译： III-V族化合物的半导体激光器件及其制造方法
公开(公告)号：US20040037336A1
公开(公告)日：2004-02-26
申请号：US10639208
申请日：2003-08-11
申请人： SHARP KABUSHIKI KAISHA
发明人： Hiroyuki Hosoba
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2226 , H01S5/3081 , H01S5/3202 , H01S5/34326
摘要： A semiconductor laser device of a III-V group compound includes a substrate including a main surface having an inclination angle of less than 20null toward a null011null direction from a (100) plane and an inclined facet further inclined toward the null011null direction from the main surface, a light emitting stacked-layered portion including at least an active layer and a clad layer over the substrate, and a current-constricting layer including a IV group impurity. The current-constricting layer has a region of an n type conductivity above the main surface of the substrate, and a region of a p type conductivity above the inclined facet of the substrate.
摘要翻译： III-V族化合物的半导体激光器件包括：具有从（100）面向[011]方向倾斜角度小于20°的主表面和朝向[011]方向进一步倾斜的倾斜面的基板，方向，包括至少包括有源层和覆盖层的发光层叠部分，以及包含IV族杂质的电流限制层。电流限制层在衬底的主表面上具有n型导电区域，并且在衬底的倾斜面上方具有p型电导率区域。

4. 发明申请

US20030038284A1 Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum 有权
公开(公告)号：US20030038284A1
公开(公告)日：2003-02-27
申请号：US10270593
申请日：2002-10-16
申请人： Sharp Kabushiki Kaisha
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
IPC分类号： H01L029/06
CPC分类号： H01L33/10
摘要： A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2null/n or less, where null is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2null. In an emission spectrum of the semiconductor light emitting device, two troughs caused by interference between the emitted ray of light and the reflected ray of light appear in the both sides of a main peak. Therefore, the troughs are unlikely to match the main peak, and the peak wavelength of the semiconductor light emitting device can be sustained. Thus, the semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.

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