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    • 5. 发明授权
    • Methods for oxidation of a semiconductor device
    • 氧化半导体器件的方法
    • US08207044B2
    • 2012-06-26
    • US13110613
    • 2011-05-18
    • Rajesh ManiNorman TamTimothy W. WeidmanYoshitaka Yokota
    • Rajesh ManiNorman TamTimothy W. WeidmanYoshitaka Yokota
    • H01L21/331
    • H01L21/31662H01L21/0223H01L21/02238H01L21/02244H01L21/02252H01L21/28273H01L21/31683H01L21/32105
    • Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
    • 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上,或者选择性地形成在非金属含有层上,具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行,包括但不限于去耦等离子体氧化室,快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中,方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体,含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层, 含有气体或含氮气体。
    • 10. 发明授权
    • Methods for oxidation of a semiconductor device
    • 氧化半导体器件的方法
    • US07947561B2
    • 2011-05-24
    • US12401895
    • 2009-03-11
    • Rajesh ManiNorman TamTimothy W. WeidmanYoshitaka Yokota
    • Rajesh ManiNorman TamTimothy W. WeidmanYoshitaka Yokota
    • H01L21/00
    • H01L21/31662H01L21/0223H01L21/02238H01L21/02244H01L21/02252H01L21/28273H01L21/31683H01L21/32105
    • Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
    • 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上,或者选择性地形成在非金属含有层上,具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行,包括但不限于去耦等离子体氧化室,快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中,方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体,含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层, 含有气体或含氮气体。