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1. 发明申请

US20150035119A1 CAPACITORS AND METHODS WITH PRASEODYMIUM OXIDE INSULATORS 有权
标题翻译：电容器和方法与氧化铅氧化物绝缘子
公开(公告)号：US20150035119A1
公开(公告)日：2015-02-05
申请号：US14518723
申请日：2014-10-20
申请人： Micron Technology, Inc.
发明人： Kie Y. Ahn , Leonard Forbes , Arup Bhattacharyya
IPC分类号： H01L49/02
CPC分类号： H01L28/60 , C23C16/308 , C23C16/40 , H01G4/085 , H01G4/1209 , H01G4/33 , H01L21/02192 , H01L21/022 , H01L21/02244 , H01L21/0228 , H01L21/31683 , H01L28/40 , H01L28/90
摘要： Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals are deposited onto a substrate and subsequently processed to form metal electrodes. Resulting capacitor structures includes properties such as improved dimensional control. One improved dimensional control includes thickness. Some resulting capacitor structures also include properties such as an amorphous or nanocrystalline microstructure. Selected components of capacitors formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
摘要翻译：示出了通过这些方法形成的形成的电容器和形成的电容器。将含有镨的单层沉积在基底上，随后进行处理以形成氧化镨电介质。将含有钛或其他金属的单层沉积在基底上，随后加工形成金属电极。所得的电容器结构包括诸如改进的尺寸控制的特性。一个改进的尺寸控制包括厚度。一些所得的电容器结构还包括诸如无定形或纳米晶体微结构的性质。使用这些方法形成的电容器的选定部件具有比衬底形貌更好的阶梯覆盖和更强的膜机械性能。

2. 发明授权

US08785259B2 Organic transistor, manufacturing method of semiconductor device and organic transistor 失效
标题翻译：有机晶体管，半导体器件和有机晶体管的制造方法
公开(公告)号：US08785259B2
公开(公告)日：2014-07-22
申请号：US13722028
申请日：2012-12-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/0512 , H01L21/02175 , H01L21/02244 , H01L21/02247 , H01L21/02252 , H01L21/31683 , H01L51/0002 , H01L51/0055 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/0566
摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.
摘要翻译：本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

3. 发明授权

US08568900B2 Methods for forming an enriched metal oxide surface 有权
标题翻译：形成富集金属氧化物表面的方法
公开(公告)号：US08568900B2
公开(公告)日：2013-10-29
申请号：US12146077
申请日：2008-06-25
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： B32B15/00
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
摘要翻译：提供了形成富含金属氧化物处于更高氧化态的金属氧化物表面的方法。还提供富含金属氧化物处于更高氧化态的金属氧化物表面。

4. 发明授权

US08445952B2 Zr-Sn-Ti-O films 有权
公开(公告)号：US08445952B2
公开(公告)日：2013-05-21
申请号：US12609897
申请日：2009-10-30
申请人： Kie Y. Ahn , Leonard Forbes
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L29/788
CPC分类号： H01L21/02194 , C04B35/49 , C04B2235/3293 , C04B2235/441 , C04B2235/444 , C23C16/40 , C23C16/45529 , C23C16/45531 , H01L21/02186 , H01L21/02189 , H01L21/02205 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31683 , H01L21/31691
摘要： A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. In an embodiment, forming the Zr—Sn—Ti—O film on a substrate includes depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers. In an embodiment, electronic devices include a dielectric layer having a Zr—Sn—Ti—O film such that Zr—Sn—Ti—O material is configured as substantially atomic monolayers. Dielectric layers containing such Zr—Sn—Ti—O films may have minimal reactions with a silicon substrate or other structures during processing.

5. 发明授权

US08207044B2 Methods for oxidation of a semiconductor device 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US08207044B2
公开(公告)日：2012-06-26
申请号：US13110613
申请日：2011-05-18
申请人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
发明人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
IPC分类号： H01L21/331
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

6. 发明授权

US08147621B2 Method for producing a metal article intended for at least partially coating with a substance 有权
标题翻译：用于制造用于至少部分涂覆物质的金属制品的方法
公开(公告)号：US08147621B2
公开(公告)日：2012-04-03
申请号：US12107374
申请日：2008-04-22
申请人： Edmund Riedl , Wolfgang Schober
发明人： Edmund Riedl , Wolfgang Schober
IPC分类号： C23C8/00 , C23C8/10 , C23C8/34 , C22F3/00
CPC分类号： H01L21/4871 , C23C8/80 , H01L21/31683 , H01L21/76801 , H01L21/76838 , H01L21/76888 , H01L23/142 , H01L23/3142 , H01L23/49503 , H01L23/498 , H01L23/528 , H01L24/11 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/0101 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01052 , H01L2924/01068 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , H05K3/385 , H05K2201/0116 , H05K2203/0315 , H05K2203/1157 , Y10T428/12472 , Y10T428/12479 , Y10T428/12993 , Y10T428/249953 , H01L2924/00
摘要： A method of producing a metal article intended for at least partially coating with a substance, which includes a metal solder, a plastic, a glass, or a ceramic. The metal article itself may include, in particular, connecting, supporting, or conducting components for an electronic component. The metal article has macroscopically smooth surface portions and a plurality of multiply curved nanopores in the region of at least one surface portion.
摘要翻译：一种制造用于至少部分地涂覆物质的金属制品的方法，其包括金属焊料，塑料，玻璃或陶瓷。金属制品本身可以包括用于电子部件的连接，支撑或导电部件。金属制品在至少一个表面部分的区域中具有宏观光滑的表面部分和多个多次弯曲的纳米孔。

7. 发明授权

US08125038B2 Nanolaminates of hafnium oxide and zirconium oxide 有权
标题翻译：氧化铪和氧化锆的纳米层压板
公开(公告)号：US08125038B2
公开(公告)日：2012-02-28
申请号：US11178914
申请日：2005-07-11
申请人： Kie Y. Ahn , Leonard Forbes
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L29/78
CPC分类号： H01L21/022 , C23C16/405 , C23C16/45529 , H01L21/02181 , H01L21/02189 , H01L21/02205 , H01L21/02266 , H01L21/02269 , H01L21/02271 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3142 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/31683 , H01L29/513 , H01L29/517 , Y10S977/811 , Y10S977/843 , Y10S977/891
摘要： A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer containing a HfO2/ZrO2 nanolaminate may be realized in a wide variety of electronic devices and systems.
摘要翻译：含有HfO 2 / ZrO 2纳米氨酸盐的电介质膜和制造这种电介质膜的方法产生可靠的电介质层，其具有比使用SiO 2可获得的薄的当量的氧化物厚度。可以在各种电子设备和系统中实现包含HfO 2 / ZrO 2纳米材料的介电层。

8. 发明申请

US20110266588A1 Method for Producing an Organic Radiation-Emitting Component and Organic Radiation-Emitting Component 有权
标题翻译：生产有机辐射发光元件和有机辐射发光元件的方法
公开(公告)号：US20110266588A1
公开(公告)日：2011-11-03
申请号：US13062449
申请日：2009-08-10
申请人： Christoph Gaerditz , Ralph Paetzold
发明人： Christoph Gaerditz , Ralph Paetzold
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L51/445 , H01L21/31683 , H01L51/5206 , H01L51/5212 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A method for producing an organic radiation-emitting component is specified, which comprises, in particular, the following method steps: A) providing a first electrode layer (2) on a substrate (1), B) applying a structured electrically conductive layer (3) on the first electrode layer (2), wherein the electrically conductive layer (3) comprises a metal, C) producing an electrically insulating layer (4) comprising an oxide of the metal of the electrically conductive layer (3) on surfaces (31) of the electrically conductive layer (3) which are remote from the first electrode layer (2) by oxidation of the metal, D) applying at least one organic functional layer (5) on the first electrode layer (2) and the electrically insulating layer (4), and E) applying a second electrode layer (9) on the at least one organic functional layer (5). An organic radiation-emitting component is furthermore specified.
摘要翻译：具体地说，包括以下方法步骤：A）在基板（1）上设置第一电极层（2），B）将结构化的导电层（ 3）在第一电极层（2）上，其中导电层（3）包括金属，C）产生电绝缘层（4），其包括表面上的导电层（3）的金属的氧化物通过金属氧化远离第一电极层（2）的导电层（3）31），D）在第一电极层（2）上施加至少一个有机功能层（5）绝缘层（4），以及E）在所述至少一个有机功能层（5）上施加第二电极层（9）。此外还规定了有机辐射发射组分。

9. 发明授权

US07968458B2 Electronic circuit board and its manufacturing method 有权
标题翻译：电子电路板及其制造方法
公开(公告)号：US07968458B2
公开(公告)日：2011-06-28
申请号：US11666137
申请日：2005-10-21
申请人： Takashi Chuman , Satoru Ohta , Satoshi Miyaguchi
发明人： Takashi Chuman , Satoru Ohta , Satoshi Miyaguchi
IPC分类号： H01L21/44
CPC分类号： H01L21/02258 , H01L21/02183 , H01L21/31683 , H01L21/76888 , H01L27/3244 , H01L51/0525 , H01L51/0545 , H01L51/055 , H01L51/56 , H05K1/0293 , H05K3/02 , H05K2203/0315 , H05K2203/1142 , H05K2203/175 , Y10T428/24355
摘要： A production process for making an electronic circuit substrate comprising: a patterning step of forming a respectively anodically oxidizable conductor pattern and distribution pattern connected to the conductor pattern on a substrate; and an anodic oxidation step of generating an oxide film from the conductor pattern and the distribution pattern by contacting an electrolyte solution with the conductor pattern and the distribution pattern and carrying out anodic oxidation while applying current thereto, the patterns serving as anodes, wherein the width or film thickness of the distribution pattern is at least partially set so that an insulator portion is formed in the anodic oxidation step in which an oxide film formed on one of the side walls of the distribution pattern is integrated with an oxide film formed on the other side wall.
摘要翻译：一种用于制造电子电路基板的制造方法，包括：图案化步骤，在基板上形成连接到所述导体图案的分别的阳极氧化导体图案和分布图案; 以及阳极氧化步骤，通过使电解质溶液与导体图案和分布图案接触，并且在施加电流的同时进行阳极氧化，从而从导体图案和分布图案产生氧化膜，所述图案用作阳极，其中宽度或分布图案的膜厚度至少部分地设定为使得在阳极氧化步骤中形成绝缘体部分，其中形成在分布图案的一个侧壁上的氧化膜与形成在另一个上的氧化物膜一体化侧墙。

10. 发明授权

US07947561B2 Methods for oxidation of a semiconductor device 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US07947561B2
公开(公告)日：2011-05-24
申请号：US12401895
申请日：2009-03-11
申请人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
发明人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
IPC分类号： H01L21/00
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

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