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1. 发明申请

US20080254314A1 METHODS FOR FORMING AN ENRICHED METAL OXIDE SURFACE 有权
标题翻译：形成富含金属氧化物表面的方法
公开(公告)号：US20080254314A1
公开(公告)日：2008-10-16
申请号：US12146077
申请日：2008-06-25
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： B32B15/20 , B32B15/00
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
摘要翻译：提供了形成富含金属氧化物处于更高氧化态的金属氧化物表面的方法。还提供富含金属氧化物处于更高氧化态的金属氧化物表面。

2. 发明授权

US07166543B2 Methods for forming an enriched metal oxide surface for use in a semiconductor device 有权
标题翻译：用于形成用于半导体器件的富集金属氧化物表面的方法
公开(公告)号：US07166543B2
公开(公告)日：2007-01-23
申请号：US10929173
申请日：2004-08-30
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device is also provided.
摘要翻译：提供富含金属氧化物处于较高氧化态的金属氧化物表面用于半导体器件的方法。还提供富含氧化态较高的金属氧化物用于半导体器件的金属氧化物表面。

3. 发明授权

US08568900B2 Methods for forming an enriched metal oxide surface 有权
标题翻译：形成富集金属氧化物表面的方法
公开(公告)号：US08568900B2
公开(公告)日：2013-10-29
申请号：US12146077
申请日：2008-06-25
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： B32B15/00
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
摘要翻译：提供了形成富含金属氧化物处于更高氧化态的金属氧化物表面的方法。还提供富含金属氧化物处于更高氧化态的金属氧化物表面。

4. 发明授权

US07396774B2 Methods for forming an enriched metal oxide surface 有权
标题翻译：形成富集金属氧化物表面的方法
公开(公告)号：US07396774B2
公开(公告)日：2008-07-08
申请号：US11487080
申请日：2006-07-14
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
摘要翻译：提供了形成富含金属氧化物处于更高氧化态的金属氧化物表面的方法。还提供富含金属氧化物处于更高氧化态的金属氧化物表面。

5. 发明授权

US07001848B1 Hydrogen plasma photoresist strip and polymeric residue cleanup process for oxygen-sensitive materials 有权
标题翻译：氢等离子体光刻胶条和聚合物残留物清除工艺用于氧敏感材料
公开(公告)号：US07001848B1
公开(公告)日：2006-02-21
申请号：US09199829
申请日：1998-11-25
申请人： Patricia B. Smith , David B. Aldrich , Stephen W. Russell
发明人： Patricia B. Smith , David B. Aldrich , Stephen W. Russell
IPC分类号： H01L21/302
CPC分类号： G03F7/427 , H01L21/02063 , H01L21/31138
摘要： Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielectric layer (layer 226 of FIG. 2a) on the first conductor (conductor 222 of FIG. 2a), the dielectric layer having at least one opening which exposes the first conductor; forming a layer of an oxygen-sensitive material (layer 234 of FIG. 2d) on the dielectric layer, the oxygen-sensitive material substantially filling the opening in the dielectric layer and for providing an electrical contact to the first conductor; forming a photoresist layer on the oxygen-sensitive material, the photoresist layer having a pattern so as to expose portions of the oxygen-sensitive material; removing the exposed portions of the oxygen-sensitive material on the dielectric material, the removal step causing a residue to be formed on exposed surfaces of the remaining portions of the oxygen-sensitive material; and removing the photoresist layer by subjecting the photoresist layer with a hydrogen-containing gas incorporated into a plasma.
摘要翻译：本发明的另一实施例是一种制造导电互连的方法，用于在第一导体和用于形成在半导体衬底中的电子器件的第二导体之间提供电连接，所述方法包括以下步骤：形成电介质层（层图2A的226）在第一导体（图2a的导体222）上，电介质层具有暴露第一导体的至少一个开口; 在电介质层上形成氧敏感材料层（图2d的层234），氧敏感材料基本上填充介电层中的开口并提供与第一导体的电接触; 在所述感氧材料上形成光致抗蚀剂层，所述光致抗蚀剂层具有图案以暴露所述氧敏感材料的部分; 去除电介质材料上的氧敏感材料的暴露部分，去除步骤，使残留物形成在氧敏感材料的剩余部分的暴露表面上; 以及通过将掺入等离子体的含氢气体对光致抗蚀剂层进行处理来除去光致抗蚀剂层。

6. 发明授权

US06218732B1 Copper bond pad process 有权
标题翻译：铜焊垫工艺
公开(公告)号：US06218732B1
公开(公告)日：2001-04-17
申请号：US09354510
申请日：1999-07-15
申请人： Stephen W. Russell , Jiong-Ping Lu
发明人： Stephen W. Russell , Jiong-Ping Lu
IPC分类号： H01L2348
CPC分类号： H01L24/02 , H01L24/45 , H01L2224/04042 , H01L2224/45124 , H01L2224/45144 , H01L2224/85375 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01084 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2224/48
摘要： An integrated circuit utilizing copper wiring has copper bond pads which are covered with a passivation layer to prevent unwanted reactions of the copper with metals which are bonded to it. The passivation layer can be an intermetallic of copper and titanium or a stacked layer of CuTix/TiN. Various nitrides can also be used, such as tungsten nitride, tantalum nitride, titanium silicon nitride, tungsten silicon nitride, and tantalum silicon nitride.
摘要翻译：使用铜布线的集成电路具有铜焊盘，其被钝化层覆盖以防止铜与被粘合的金属的不期望的反应。钝化层可以是铜和钛的金属间化合物或CuTix / TiN的堆叠层。还可以使用氮化物，氮化钨，氮化钽，氮化硅，氮化钨，氮化钽等氮化物。

7. 发明授权

US5124066A Storage-stable enzymatic liquid detergent composition 失效
标题翻译：储存稳定的酶液体洗涤剂组合物
公开(公告)号：US5124066A
公开(公告)日：1992-06-23
申请号：US709086
申请日：1991-05-30
申请人： Stephen W. Russell
发明人： Stephen W. Russell
IPC分类号： C11D1/72 , C11D3/386
CPC分类号： C11D1/72 , C11D3/38663
摘要： An aqueous liquid detergent composition comprising water, a glyceryl ether of an alkoxylated nonionic surfactant, an enzyme and boric acid or a boron-equivalent thereof capable of reacting with said surfactant.
摘要翻译：一种水性液体洗涤剂组合物，其包含水，烷氧基化非离子表面活性剂的甘油醚，能够与所述表面活性剂反应的硼酸和硼硼酸。

8. 发明申请

US20150349255A1 Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells 有权
标题翻译：交叉点存储单元阵列和形成数组交叉点存储单元的方法
公开(公告)号：US20150349255A1
公开(公告)日：2015-12-03
申请号：US14293577
申请日：2014-06-02
申请人： Fabio Pellizzer , Stephen W. Russell , Tony M. Lindenberg
发明人： Fabio Pellizzer , Stephen W. Russell , Tony M. Lindenberg
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2472 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： An array of cross point memory cells comprises spaced elevationally inner first lines, spaced elevationally outer second lines which cross the first lines, and a multi-resistive state region elevationally between the first and second lines where such cross. Individual of the multi-resistive state regions comprise elevationally outer multi-resistive state material and elevationally inner multi-resistive state material that are electrically coupled to one another. The inner multi-resistive state material has opposing edges in a vertical cross-section. The outer multi-resistive state material has opposing edges in the vertical cross-section that are laterally offset relative to the opposing edges of the inner multi-resistive state material in the vertical cross-section. Methods are also disclosed.
摘要翻译：交叉点存储单元的阵列包括间隔开的内部第一线，与第一线交叉的间隔开的外部第二直线，以及在第一和第二线之间的高阻状态区域，这样的交叉。多电阻状态区域的个体包括彼此电耦合的高度外部的多重电阻状态材料和正向内部多电阻状态材料。内部多阻态材料具有垂直横截面中的相对边缘。外部多阻态材料在垂直横截面中具有相对于内部多阻态材料的相对边缘在垂直横截面中横向偏移的相对边缘。还公开了方法。

9. 发明申请

US20120058633A1 Methods Of Forming Features Of Integrated Circuitry 有权
标题翻译：集成电路形成特征的方法
公开(公告)号：US20120058633A1
公开(公告)日：2012-03-08
申请号：US12874781
申请日：2010-09-02
申请人： Stephen W. Russell , Kyle A. Armstrong
发明人： Stephen W. Russell , Kyle A. Armstrong
IPC分类号： H01L21/28 , G03F7/20
CPC分类号： G03F7/0035 , H01L21/0337 , H01L27/11519 , H01L27/11529 , H01L27/11546
摘要： Methods of forming features such as word lines of memory circuitry are disclosed. One such method includes forming an initial pitch multiplied feature pattern extending from a target area into only one of a first or second periphery area received on opposing sides of the target area. Thereafter, a subsequent feature pattern is formed which extends from the target array area into the other of the first or second periphery area. The initial and subsequent feature patterns may be used in forming features in an underlying material which extend from the target area to the first and second periphery areas. Other embodiments are disclosed.
摘要翻译：公开了诸如存储器电路字线之类的特征的方法。一种这样的方法包括形成从目标区域延伸到仅在目标区域的相对侧上接收的第一或第二外围区域中的一个的初始间距倍增特征图案。此后，形成随后的特征图案，其从目标阵列区域延伸到第一或第二外围区域中的另一个。初始和随后的特征图案可以用于形成从目标区域延伸到第一和第二外围区域的下层材料中的特征。公开了其他实施例。

10. 发明授权

US07972926B2 Methods of forming memory cells; and methods of forming vertical structures 有权
标题翻译：形成记忆细胞的方法以及形成垂直结构的方法
公开(公告)号：US07972926B2
公开(公告)日：2011-07-05
申请号：US12497128
申请日：2009-07-02
申请人： David A. Kewley , Brian Cleereman , Stephen W. Russell , Rex Stone , Anthony C. Krauth
发明人： David A. Kewley , Brian Cleereman , Stephen W. Russell , Rex Stone , Anthony C. Krauth
IPC分类号： H01L21/336
CPC分类号： H01L21/32133 , H01L21/0337 , H01L21/28008 , H01L21/28273 , H01L21/28282 , H01L21/32139 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed over and between the photoresist features, over the placeholder, and within said gap. The layer may be anisotropically etched into a plurality of first vertical structures along edges of the photoresist features, and into a second vertical structure along an edge of the placeholder. A mask may be formed over the second vertical structure. Subsequently, the first vertical structures may be used to pattern string gates while the mask is used to pattern a select gate. Some embodiments include methods of forming conductive runners, and some embodiments may include semiconductor constructions.
摘要翻译：一些实施例包括形成存储器的方法。可以在栅极堆叠上形成一系列光致抗蚀剂特征，并且可以在所述串联的末端形成占位符。占位符可以通过间隙与所述系列的端部间隔开。可以在光致抗蚀剂特征之上和之间在占位符上方以及在所述间隙内形成层。该层可以沿光致抗蚀剂特征的边缘各向异性地蚀刻成多个第一垂直结构，并且沿着占位符的边缘进入第二垂直结构。可以在第二垂直结构上形成掩模。随后，可以使用第一垂直结构来模拟串门，同时使用掩模来对选择门进行图案化。一些实施例包括形成导电流道的方法，并且一些实施例可以包括半导体结构。

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