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1. 发明授权

US08465903B2 Radiation patternable CVD film 失效
标题翻译：可辐射刻蚀CVD膜
公开(公告)号：US08465903B2
公开(公告)日：2013-06-18
申请号：US13267341
申请日：2011-10-06
申请人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
发明人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
IPC分类号： G03C5/00 , G03F7/00 , G03F7/027 , G03F7/039 , G03F7/075
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译：提供了在基板上形成对辐射敏感的光刻胶的方法。描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。沉积方法利用具有可暴露于辐射时交联的可交联部分的前体。辐射可以在有或没有氧的情况下进行。然后可以将曝光或未曝光的区域显影在碱性显影液中。

2. 发明申请

US20130071580A1 Activated Silicon Precursors For Low Temperature Deposition 有权
标题翻译：活性硅前体用于低温沉积
公开(公告)号：US20130071580A1
公开(公告)日：2013-03-21
申请号：US13609551
申请日：2012-09-11
申请人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
发明人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了使用卤化或氰化硅烷沉积SiN膜的方法。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

3. 发明申请

US20120269967A1 Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use 审中-公开
标题翻译：热线原子层沉积装置及其使用方法
公开(公告)号：US20120269967A1
公开(公告)日：2012-10-25
申请号：US13437567
申请日：2012-04-02
申请人： Joseph Yudovsky , Garry K. Kwong , Dieter Haas , Steven D. Marcus , Timothy W. Weidman
发明人： Joseph Yudovsky , Garry K. Kwong , Dieter Haas , Steven D. Marcus , Timothy W. Weidman
IPC分类号： C23C16/455 , B05B1/14
CPC分类号： C23C16/45551 , C23C16/452 , C23C16/45544
摘要： Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.
摘要翻译：提供了用于原子层沉积设备的气体分配板，其包括热线或热丝单元，其可以在加工基板的同时被加热以激发气态物质。还描述了使用热丝处理衬底以激发气态前体物质的方法。

4. 发明申请

US20110217850A1 METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US20110217850A1
公开(公告)日：2011-09-08
申请号：US13110613
申请日：2011-05-18
申请人： RAJESH MANI , NORMAN TAM , TIMOTHY W. WEIDMAN , YOSHITAKA YOKOTA
发明人： RAJESH MANI , NORMAN TAM , TIMOTHY W. WEIDMAN , YOSHITAKA YOKOTA
IPC分类号： H01L21/314
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

5. 发明申请

US20110183458A1 FORMING SOLAR CELLS USING A PATTERNED DEPOSITION PROCESS 失效
标题翻译：使用图案沉积工艺形成太阳能电池
公开(公告)号：US20110183458A1
公开(公告)日：2011-07-28
申请号：US13042313
申请日：2011-03-07
申请人： Timothy W. WEIDMAN , Rohit Mishra , Michael P. Stewart , Kapila P. Wijekoon , Yonghwa Chris Cha , Tristan Holtam , Vinay Shah
发明人： Timothy W. WEIDMAN , Rohit Mishra , Michael P. Stewart , Kapila P. Wijekoon , Yonghwa Chris Cha , Tristan Holtam , Vinay Shah
IPC分类号： H01L31/0236
CPC分类号： H01L21/67034 , G01T1/2018 , H01L21/225 , H01L21/306 , H01L21/308 , H01L21/67727 , H01L21/67736 , H01L21/67745 , H01L21/6776 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.
摘要翻译：本发明的实施例考虑使用新的方法形成高效太阳能电池，以形成太阳能电池器件的有源掺杂区域和金属接触结构。在一个实施例中，所述方法包括沉积用于限定太阳能电池器件的有源区域和/或接触结构的边界的介电材料的步骤。可以使用各种技术来形成太阳能电池的有源区域和金属接触结构。

6. 发明申请

US20100255655A1 CURING METHODS FOR SILICON DIOXIDE MULTI-LAYERS 有权
标题翻译：二氧化硅多层固化方法
公开(公告)号：US20100255655A1
公开(公告)日：2010-10-07
申请号：US12817840
申请日：2010-06-17
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
IPC分类号： H01L21/762
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.
摘要翻译：提供了在基板上固化氧化硅层的方法。所述方法可以包括提供半导体处理室和衬底并形成填充衬底上的沟槽的一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。所述方法还包括将酸性蒸汽引入半导体处理室，酸性蒸气与氧化硅层反应以从氧化硅层除去碳物质。所述方法还可以包括在固化的氧化硅上沉积额外的氧化硅以填充沟槽。所述方法还可以包括从半导体处理室去除酸性蒸汽。

7. 发明申请

US20100051085A1 BACK CONTACT SOLAR CELL MODULES 审中-公开
标题翻译：返回联系太阳能电池模块
公开(公告)号：US20100051085A1
公开(公告)日：2010-03-04
申请号：US12549291
申请日：2009-08-27
申请人： Timothy W. Weidman , Charles Gay , Hsiu-Wu (Jason) Guo , Rohit Mishra , Kapila P. Wijekoon , Hemant Mungekar
发明人： Timothy W. Weidman , Charles Gay , Hsiu-Wu (Jason) Guo , Rohit Mishra , Kapila P. Wijekoon , Hemant Mungekar
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/02245 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. Methods of forming the high efficiency solar cell may include the use of a prefabricated back plane that is bonded to the metalized solar cell device to form an interconnected solar cell module. Solar cells most likely to benefit from the invention including those having active regions comprising single or multicrystalline silicon with both positive and negative contacts on the rear side of the cell.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。形成高效率太阳能电池的方法可以包括使用结合到金属化太阳能电池器件的预制背板来形成互连的太阳能电池模块。最有可能受益于本发明的太阳能电池，包括那些具有活性区域的太阳能电池，所述活性区域包括在电池背面具有正触点和负极的单晶硅或多晶硅。

8. 发明申请

US20090142880A1 Solar Cell Contact Formation Process Using A Patterned Etchant Material 有权
标题翻译：使用图案化的蚀刻剂材料的太阳能电池触点形成过程
公开(公告)号：US20090142880A1
公开(公告)日：2009-06-04
申请号：US12274023
申请日：2008-11-19
申请人： Timothy W. Weidman , Rohit Mishra
发明人： Timothy W. Weidman , Rohit Mishra
IPC分类号： H01L21/02 , H01L31/18
CPC分类号： H01L31/022425 , Y02E10/50
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed.
摘要翻译：本发明的实施例考虑使用新的方法形成高效太阳能电池来形成太阳能电池器件的有源区和金属接触结构。在一个实施例中，所述方法包括使用各种蚀刻和图案化工艺，所述蚀刻和图案化工艺用于通过覆盖太阳能电池基板的表面的覆盖介电层限定点接触。该方法通常包括沉积能够在可以形成与太阳能电池器件的电接触的电介质层中形成所需图案的蚀刻剂材料。

9. 发明申请

US20090139568A1 Crystalline Solar Cell Metallization Methods 审中-公开
标题翻译：结晶太阳能电池金属化方法
公开(公告)号：US20090139568A1
公开(公告)日：2009-06-04
申请号：US12273975
申请日：2008-11-19
申请人： Timothy W. Weidman , Michael P. Stewart , Kapila P. Wijekoon , Rohit Mishra
发明人： Timothy W. Weidman , Michael P. Stewart , Kapila P. Wijekoon , Rohit Mishra
IPC分类号： H01L31/00 , H01L21/02 , H01L31/18
CPC分类号： H01L31/022425 , Y02E10/50
摘要： Embodiments of the invention contemplate formation of a low cost solar cell using novel methods and apparatus to form a metal contact structure. The method generally uses a conductive contact layer that enables formation of a good electrical contact to the solar cell device. In one case, the contact layer is a nickel containing layer. Various deposition techniques may be used to form the metal contact structure.
摘要翻译：本发明的实施例考虑使用新颖的方法和装置形成金属接触结构来形成低成本太阳能电池。该方法通常使用能够形成与太阳能电池器件良好的电接触的导电接触层。在一种情况下，接触层是含镍层。可以使用各种沉积技术来形成金属接触结构。

10. 发明授权

US07542132B2 Raman spectroscopy as integrated chemical metrology 失效
标题翻译：拉曼光谱作为综合化学计量学
公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
申请人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
发明人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译：公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

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